FDPF18N50T ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.6 EUR |
25+ | 2.97 EUR |
26+ | 2.82 EUR |
50+ | 2.72 EUR |
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Technische Details FDPF18N50T ONSEMI
Description: MOSFET N-CH 500V 18A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V.
Weitere Produktangebote FDPF18N50T nach Preis ab 2.66 EUR bis 7.06 EUR
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FDPF18N50T | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 132 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF18N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50T | Hersteller : onsemi / Fairchild | MOSFETs 500V N-Channel PowerTrench MOSFET |
auf Bestellung 830 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50T | Hersteller : onsemi |
Description: MOSFET N-CH 500V 18A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |