Produkte > TQM
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||||
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| TQM019NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM019NH04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 100A 8-Pin PDFN EP Automotive AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM019NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM019NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 100A, Single N-Channel Power MOSFET | auf Bestellung 4994 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM019NH04CR-V | Taiwan Semiconductor | Trans MOSFET N-CH 40V 100A Automotive 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM019NH04CR-V | Taiwan Semiconductor | Trans MOSFET N-CH 40V 100A Automotive 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM019NH04CR-V RLG | Taiwan Semiconductor | MOSFETs 40V, 100A, Single N-Channel Power MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM019NH04CR-V RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM019NH04LCR | Taiwan Semiconductor | TQM019NH04LCR | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM019NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 100A, Single N-Channel Power MOSFET | auf Bestellung 2497 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM019NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM019NH04LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 40V 214A Automotive AEC-Q101 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM019NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM019NH04LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 40V 214A Automotive 8-Pin PDFN EP | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM025NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 24A/157A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM025NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 157 A, 0.0018 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 157A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PDFN56U Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0018ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2498 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM025NB04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 24A Automotive 8-Pin PDFN EP | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM025NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 24A/157A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NB04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 24A Automotive 8-Pin PDFN EP | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM025NB04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 157A, Single N-Channel Power MOSFET | auf Bestellung 4840 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM025NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 157 A, 0.0018 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 157A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2498 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM025NH04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 100A 8-Pin PDFN EP Automotive AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM025NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 100A, Single N-Channel Power MOSFET | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NH04CR-V | Taiwan Semiconductor | TQM025NH04CR-V | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM025NH04CR-V RLG | Taiwan Semiconductor | MOSFETs 40V, 100A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM025NH04CR-V RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM025NH04LCR | Taiwan Semiconductor | Trans MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TQM025NH04LCR | Taiwan Semiconductor | Trans MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TQM025NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 100A, Single N-Channel Power MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM025NH04LCR-V RLG | Taiwan Semiconductor Corporation | Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM025NH04LCR-V RLG | Taiwan Semiconductor | MOSFETs 40V, 100A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM032NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM032NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 81A, Single N-Channel Power MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM032NH04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 40V 143A Automotive AEC-Q101 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM032NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM032NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Qualification: AEC-Q101 | auf Bestellung 7932 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM032NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 81A, Single N-Channel Power MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM032NH04LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 143A 8-Pin PDFN EP T/R Automotive AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM032NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM033NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM033NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 121 A, 0.0022 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 121A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0022ohm | auf Bestellung 1919 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM033NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 21A/121A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 7356 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM033NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM033NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 121 A, 0.0022 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 121A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 107W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: PDFN56U Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0022ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0022ohm | auf Bestellung 1919 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM033NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 21A/121A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM033NB04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 121A, Single N-Channel Power MOSFET | auf Bestellung 4366 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM033NB04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 121A Automotive AEC-Q101 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM043NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 2475 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM043NH04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 40V 113A | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM043NH04LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 40V 113A Automotive 8-Pin PDFN-U EP | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM043NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM043NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM043NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM050NB06CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM050NB06CR RLG - Leistungs-MOSFET, n-Kanal, 60 V, 104 A, 0.0043 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 104A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2439 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM050NB06CR RLG | Taiwan Semiconductor | MOSFETs 60V, 104A, Single N-Channel Power MOSFET | auf Bestellung 7818 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM050NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 16A/104A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 2542 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM050NB06CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM050NB06CR RLG - Leistungs-MOSFET, n-Kanal, 60 V, 104 A, 0.0043 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 104A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PDFN56U Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0043ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2439 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM050NB06CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 104A Automotive AEC-Q101 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM050NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 16A/104A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM056NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM056NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2912 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM056NH04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 54A Automotive 8-Pin PDFN EP | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM056NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2912 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM056NH04CR RLG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Power dissipation: 78.9W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 27.3nC Kind of package: tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM056NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM056NH04LCR RLG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Power dissipation: 78.9W Case: PDFN56U Gate-source voltage: ±16V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 30.4nC Kind of package: tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM056NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 4750 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM056NH04LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 54A Automotive AEC-Q101 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM056NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 15A/75A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NB04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 75A, Single N-Channel Power MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM070NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 75 A, 0.0045 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 83W Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PDFN56U Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0045ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0045ohm | auf Bestellung 4950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM070NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 15A/75A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM070NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 75 A, 0.0045 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0045ohm | auf Bestellung 4950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM070NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NH04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 54A Automotive 8-Pin PDFN EP | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM070NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NH04LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 70A 8-Pin PDFN EP T/R Automotive AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM070NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2169 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM070NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2169 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM076NH04DCR | Taiwan Semiconductor | TQM076NH04DCR | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM076NH04DCR RLG | Taiwan Semiconductor | MOSFET 40V, 40A, Dual N-Channel Power MOSFET | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM076NH04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 15A/40A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM076NH04DCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 40V 64A Automotive AEC-Q101 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM076NH04DCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 40V 64A Automotive 8-Pin PDFN EP | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM076NH04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 15A/40A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM076NH04LDCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 34A Automotive AEC-Q101 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM076NH04LDCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 15A/40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM076NH04LDCR RLG | Taiwan Semiconductor | MOSFETs 40V, 40A, Dual N-Channel Power MOSFET | auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM076NH04LDCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 15A/40A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM100NB04CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V Power Dissipation (Max): 2.4W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM100NB04CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V Power Dissipation (Max): 2.4W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM110NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM110NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 0.0072 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1172 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM110NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 12A/54A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 4738 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM110NB04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 4924 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM110NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM110NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 0.0072 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 68W Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: PDFN56U Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0072ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1172 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM110NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 12A/54A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM110NB04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 54A Automotive AEC-Q101 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM110NB04DCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 40V 10A Automotive 8-Pin PDFN-U EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM110NB04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 10A/50A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 58W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1354pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7712 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM110NB04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 10A/50A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 58W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1354pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM110NB04DCR RLG | Taiwan Semiconductor | MOSFETs 40V, 50A, Dual N-Channel Power MOSFET | auf Bestellung 6016 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM123KCX RFG | Taiwan Semiconductor Corporation | Description: 100V, 0.17A, SINGLE N-CHANNEL SM Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 328mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 34.7 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM123KCX RFG | Taiwan Semiconductor Corporation | Description: 100V, 0.17A, SINGLE N-CHANNEL SM Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 328mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 34.7 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM130NB04CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V Power Dissipation (Max): 2.4W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM130NB04CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V Power Dissipation (Max): 2.4W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM130NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 10A/50A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 3963 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM130NB06CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 50A Automotive AEC-Q101 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM130NB06CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM130NB06CR RLG - Leistungs-MOSFET, n-Kanal, 60 V, 50 A, 0.0117 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0117ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1199 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM130NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 10A/50A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM130NB06CR RLG | Taiwan Semiconductor | MOSFETs 60V, 50A, Single N-Channel Power MOSFET | auf Bestellung 4495 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM130NB06CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM130NB06CR RLG - Leistungs-MOSFET, n-Kanal, 60 V, 50 A, 0.0117 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 83W Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PDFN56U Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0117ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0117ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1199 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM138KCU | Taiwan Semiconductor | TQM138KCU | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM138KCX | Taiwan Semiconductor | TQM138KCX | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM138KDCU6 RFG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 0.32A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM138KDCU6 RFG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 0.32A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM150NB04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 41A, Single N-Channel Power MOSFET | auf Bestellung 7284 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM150NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 10A/41A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM150NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM150NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 41 A, 0.009 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 41A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 56W Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM150NB04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 41A Automotive AEC-Q101 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM150NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 10A/41A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM150NB04CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM150NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 41 A, 0.009 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 41A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 56W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 56W Bauform - Transistor: PDFN56U Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.009ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM150NB04DCR | Taiwan Semiconductor | 40V 39A Dual N Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM150NB04DCR | Taiwan Semiconductor | MOSFET 40V MOSFET 15 MOhms | auf Bestellung 4753 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM150NB04DCR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM150NB04DCR RLG - Dual-MOSFET, n-Kanal, 40 V, 40 V, 39 A, 39 A, 0.0103 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 39A Dauer-Drainstrom Id, p-Kanal: 39A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 39A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0103ohm Verlustleistung, p-Kanal: 48W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0103ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 4785 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM150NB04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 9A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFNU (5x6) | auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM150NB04DCR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM150NB04DCR RLG - Dual-MOSFET, n-Kanal, 40 V, 40 V, 39 A, 39 A, 0.0103 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 39A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 39A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0103ohm Verlustleistung, p-Kanal: 48W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0103ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 4785 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM150NB04DCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 39A Automotive 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM150NB04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 9A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFNU (5x6) | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM250NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 7A/32A 8PDFNU | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM250NB06CR RLG | Taiwan Semiconductor | MOSFET 60V, 32A, Single N-Channel Power MOSFET | auf Bestellung 2898 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM250NB06CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH Si 60V 32A Automotive AEC-Q101 8-Pin PDFN-U EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM250NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 7A/32A 8PDFNU | auf Bestellung 2436 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM250NB06CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V Power Dissipation (Max): 2.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM250NB06CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V Power Dissipation (Max): 2.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM250NB06DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 6A/30A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 58W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7455 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM250NB06DCR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM250NB06DCR RLG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 30 A, 30 A, 0.021 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 58W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 58W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2358 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM250NB06DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 6A/30A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 58W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM250NB06DCR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM250NB06DCR RLG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 30 A, 30 A, 0.021 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 30A Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 58W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 58W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2358 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM250NB06DCR RLG | Taiwan Semiconductor | MOSFETs 60V, 30A, Dual N-Channel Power MOSFET | auf Bestellung 4978 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM250NB06DCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 30A Automotive 8-Pin PDFN-U EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM2M9016 | Qorvo | Signal Conditioning 1.575GHz IL=.6dB Attenution 31dB | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM2N7002KCU RFG | Taiwan Semiconductor Corporation | Description: 60V, 0.32A, SINGLE N-CHANNEL SMA Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V Qualification: AEC-Q101 Power Dissipation (Max): 316mW (Ta) | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM2N7002KCU RFG | Taiwan Semiconductor Corporation | Description: 60V, 0.32A, SINGLE N-CHANNEL SMA Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V Qualification: AEC-Q101 Power Dissipation (Max): 316mW (Ta) | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM2N7002KCU RFG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; 316mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.32A Power dissipation: 316mW Case: SOT323 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.7nC Kind of package: tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM2N7002KCX RFG | Taiwan Semiconductor | MOSFETs 60V, 0.37A, Single N-Channel Small-signal MOSFETs | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM2N7002KCX RFG | Taiwan Semiconductor Corporation | Description: 60V, 0.37A, SINGLE N-CHANNEL SMA Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V Qualification: AEC-Q101 Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V Power Dissipation (Max): 416mW (Ta) | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM2N7002KCX RFG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 416mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.37A Power dissipation: 416mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.7nC Kind of package: tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM2N7002KCX RFG | Taiwan Semiconductor Corporation | Description: 60V, 0.37A, SINGLE N-CHANNEL SMA Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V Qualification: AEC-Q101 Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V Power Dissipation (Max): 416mW (Ta) | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM2N7002KDCU6 RFG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 0.33A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 Power - Max: 337mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM2N7002KDCU6 RFG | TAIWAN SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 330mA; 337mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.33A Power dissipation: 337mW Case: SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.7nC Kind of package: tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM2N7002KDCU6 RFG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 0.33A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 Power - Max: 337mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 6A/27A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM300NB06CR RLG - Leistungs-MOSFET, n-Kanal, 60 V, 27 A, 0.025 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 56W Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 56W Bauform - Transistor: PDFN56U Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.025ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2498 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM300NB06CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 27A Automotive AEC-Q101 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM300NB06CR RLG | Taiwan Semiconductor | MOSFETs 60V, 27A, Single N-Channel Power MOSFET | auf Bestellung 4996 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 6A/27A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 4999 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06CR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM300NB06CR RLG - Leistungs-MOSFET, n-Kanal, 60 V, 27 A, 0.025 ohm, PDFN56U, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 56W Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2498 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM300NB06CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06DCR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM300NB06DCR RLG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 25 A, 25 A, 0.025 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 25A Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm Verlustleistung, p-Kanal: 48W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2394 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM300NB06DCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 25A Automotive AEC-Q101 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM300NB06DCR RLG | Taiwan Semiconductor | MOSFETs 60V, 25A, Dual N-Channel Power MOSFET | auf Bestellung 4953 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM300NB06DCR RLG | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - TQM300NB06DCR RLG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 25 A, 25 A, 0.025 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 25A Dauer-Drainstrom Id, p-Kanal: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 25A Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm Verlustleistung, p-Kanal: 48W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PDFN56U Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2394 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| TQM3M7001 | Triquint | 07+ SOT23 | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM4M3019 | auf Bestellung 175 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM4M9073 | Qorvo | Attenuators DC-6GHz IL .1dB RL >22dB | auf Bestellung 2435 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM613016CEL-3 | auf Bestellung 88 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM613017 | auf Bestellung 2556 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM613017A | auf Bestellung 915 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM613025 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM613026 | auf Bestellung 915 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
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| TQM613028 | auf Bestellung 14 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM613029 | TRIQUINT | auf Bestellung 28 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM613030 | TRIQUINT | QFN | auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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| TQM616025 | Qorvo | RF Amplifier WCDMA US Cell-Band PA/Duplexer Module | Produkt ist nicht verfügbar | |||||||||||||||||||
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| TQM653029 | TRIQUINT | auf Bestellung 140 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM656024 | auf Bestellung 26988 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM663017 | TRIQUTNT | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
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| TQM663017 | TRIQUINT | 09+ | auf Bestellung 2018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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| TQM663017A | TRIQUINT | 09+ | auf Bestellung 916 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM663029 | Qorvo | RF Amplifier 1880MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM663029 | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
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| TQM666022 | auf Bestellung 81718 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
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| TQM666032A | auf Bestellung 54 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM666032B | auf Bestellung 109327 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM666092 | auf Bestellung 445289 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM676001 | auf Bestellung 350 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
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| TQM676021 | Qorvo | RF Amplifier WCDMA IMT2100 Band PA/Duplexer Module | Produkt ist nicht verfügbar | |||||||||||||||||||
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| TQM679002 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM679002A | Qorvo | RF Front End 2400-2500MHz Pout 17dBm | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM6M4001 | TRIQUINT | 0607+ | auf Bestellung 16463 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4001 | TriQuint | QFN?? | auf Bestellung 6794 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4002 | TRIQUINT | QFN?? | auf Bestellung 1244 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4002-B | TRIQUINT | 2007 | auf Bestellung 2879 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4002-B | TRIQUINT | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM6M4002-B | TRIQUINT | QFN?? | auf Bestellung 677 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4002B | auf Bestellung 133 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM6M4002DB | TQS | 07+; | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4003 | TRIQUINT | QFN? | auf Bestellung 71 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4022 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM6M4022E | TRIQUINT | 07+ | auf Bestellung 1059 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4028 | auf Bestellung 2091 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM6M4028E | TRIQUINT | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM6M4028E | TRIQUINT | QFN?? | auf Bestellung 2021 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4028U | TQM | QFN?? | auf Bestellung 2410 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4029 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM6M4038 | TriQuint | 05+ | auf Bestellung 398 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4038E | TRIQUINT | QFN?? | auf Bestellung 974 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4048 | TRIQUINT | 10+ TSSOP | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M4050 | Qorvo | RF Transmitter GSM850/900 DCS/PCS | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM6M5001 | TriQuint | auf Bestellung 8700 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM6M5001 | TriQuint | 09+ | auf Bestellung 2518 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM6M5003 | auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
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| TQM6M7010 | TRIQUINT | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM6M9008 | auf Bestellung 160000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
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| TQM6T6031 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM7130124 | auf Bestellung 160000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM713015LGA-10 | auf Bestellung 1096 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM713019 | TQS | QFN?? | auf Bestellung 1274 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM713019 | Qorvo | RF Amplifier Cell band CDMA PAM | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM713021 | TRIQUINT | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM713021 | TQS | 07+; | auf Bestellung 167500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM713024 | TQS | 07+; | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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| TQM716015 | TRIQUINT | QFN | auf Bestellung 8634 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM716015 | Qorvo | RF Amplifier 836MHz CDMA, WCDMA LTE | auf Bestellung 1363 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM716015 PCN | TRIQUINT | QFN | auf Bestellung 4 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM726018 | TRIQUINT | QFN | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM726018 | Qorvo | RF Amplifier WCDMA Bands 8 | auf Bestellung 1594 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM763013 | auf Bestellung 2345 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM763021 | TRIQUINT | auf Bestellung 1400 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
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| TQM76314 | TirQuint | auf Bestellung 180 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM766012 | Qorvo | RF Amplifier WCDMA Bands 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM766012 | auf Bestellung 10968 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM776003 | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM776011 | TRIQUINT | QFN | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM776011 | Qorvo | RF Amplifier WCDMA Band 1 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM7M4002 | TRIQUINT | QFN?? | auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M4006 | TRIQUINT | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM7M4006 | MANUFACT | 06+ | auf Bestellung 46 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M4007 | auf Bestellung 12134 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM7M4014 | auf Bestellung 1028 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM7M4014-B | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM7M4022 | TQS | auf Bestellung 4470 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM7M4022 | TRIQUINT | QFN?? | auf Bestellung 27740 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M4022 | TQM | LCC | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M4022 | TRIQUINT | 2004 | auf Bestellung 6300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M4022-TR | TQS | 07+; | auf Bestellung 22500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5002 | TRIQUINT | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM7M5002 | TQS | 07+; | auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5002 | TriQuint | 0846+ | auf Bestellung 11221 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5003 | TRIQUINT | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM7M5003 | TRIQUINT | QFN?? | auf Bestellung 902 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5003 | TQS | QFN | auf Bestellung 1489 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5003 | TRIQUINT | 2006 | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5003-PHIL | TQS | QFN | auf Bestellung 466 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5004 | MANUFACTURER'S | 0601+ QFN | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5004 | MANUFACT | 06+ | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5005 | TQM | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM7M5005H | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM7M5005H | TRIQUINT 12+ QFN | auf Bestellung 114 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM7M5008 | TQS | auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM7M5012 | TRIQUINT | 08+ | auf Bestellung 1095 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5012 | TRIQUINT | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| TQM7M5012H | TRIQUINT | 09+ TSOP | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5012H | Qorvo | RF Amplifier Quadband EDGE Pola PAM Halogen-Free | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM7M5012H | TRTQUINT | QFN?? | auf Bestellung 91553 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5013 | TRIQUINT | QFN | auf Bestellung 88 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5013 Produktcode: 67343 | IC > IC Niederfrequenzverstärker | Produkt ist nicht verfügbar | ||||||||||||||||||||
| TQM7M5013 | Qorvo | RF Amplifier GSM850/900/DCS/PCS | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM7M5013 | TVIQUINT | QFN | auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| TQM7M5015 | auf Bestellung 2905 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM7M5022 | Qorvo | RF Modules GSM/GPRS/EDGE-Polar | auf Bestellung 626 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM7M5050 | Qorvo | RF Amplifier GSM/EDGE/WEDGE Quad Band | auf Bestellung 1472 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM7M6018 | Qorvo | RF Amplifier Dual Band PA Mod. Bd 1,2,3,8,25 and 26 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM7M6125 | Qorvo | RF Amplifier Dual Band PA Mod. Bands 1,2,5 and 8 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM7M7012 | auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQM7M9023H | RFMD | Description: MODULE GSM | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM7M9050M | RFMD | Description: MODULE GSM | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM7M9053 | RFMD | Description: MODULE GSM | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM7M9053 | Qorvo | RF Amplifier Quad Band MMPA GSM/EDGE/WEDGE WCDMA | auf Bestellung 87 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM84KDCU6 RFG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 60V 0.17A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM84KDCU6 RFG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 60V 0.17A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM879006 | Qorvo | RF Amplifier 1.8-2.7GHz 31dB Gain 25.4dBm P1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM879006-PCB | Qorvo | RF Development Tools 1.8-2.7GHz Gain 31dB Eval Brd | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM879006A-PCB | Qorvo | RF Development Tools 1.4-2.7GHz Gain 31.7 Eval Board | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM879006ATR13 | Qorvo | RF Amplifier 1.4-2.7GHz Gain 31.7 NF 1.5dB | auf Bestellung 2463 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM879008 | Qorvo | RF Amplifier 2.3-2.7GHz NF 3.9dB Gain 41.5dB | auf Bestellung 594 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM879008-PCB | Qorvo | RF Development Tools 2.3-2.7GHz NF 3.9dB Eval Board | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM879008TR13 | Qorvo | RF Amplifier Advanced PMU for HiSilicon Processors | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM879026-PCB2140 | Qorvo | RF Development Tools 700-4000MHz NF 1.5dB Eval Board | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM879026-PCB900 | Qorvo | RF Development Tools TQM879026-PCB900 869-960MHZ EVAL BRD | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM879026TR13 | Qorvo | RF Amplifier 700-4000MHz NF 1.5dB Gain 32.5dB 1/4 Wat | auf Bestellung 1240 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM879028-PCB2140 | Qorvo | RF Development Tools 700-4000MHz NF 1.5dB Eval Board | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM879028-PCB900 | Qorvo | RF Development Tools TQM879028-PCB900 869-960MHZ EVAL BRD | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM879028TR13 | Qorvo | RF Amplifier 700-4000MHz NF 1.5dB Gain 33dB 1/2 Watt | auf Bestellung 2048 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM8M9075 | Qorvo | RF Amplifier 50-4000MHz NF 2.9dB Gain 18dB | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM8M9075-PCB 0.3-4.0GHZ EVAL BRD | Qorvo | RF Development Tools 50-4000MHz NF 3.7dB Gain 13dB Eval Brd | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM8M9076-PCB 0.3-4.0GHZ EVAL BOARD | Qorvo | RF Development Tools 50-4000MHz NF 3.7dB Gain 13dB Eval Brd | Produkt ist nicht verfügbar | |||||||||||||||||||
| TQM8M9077 | Qorvo | RF Amplifier 50-4000MHz NF 3.7dB Gain 13dB | auf Bestellung 1420 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM8M9079 | Qorvo | RF Amplifier 500-2700MHz NF 4dB G ain 38dB Attn. 30dB | auf Bestellung 2008 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM8M9079-PCB | Qorvo | RF Development Tools 500-2700MHz NF 4dB Eval Board | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM963014 | Qorvo | Signal Conditioning Band Class 14 BAW IL 1.8dB TX 2.2dB Rx | auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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| TQM976027 | Qorvo | Signal Conditioning Band 7 Duplexer 50 Ohm Tx/Rcv BAW | auf Bestellung 2084 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| TQM9M9030 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| TQMHB | VENTION | Category: Computer Adapters Description: Hub USB; USB 3.0; PnP; grey; Number of ports: 9; 0.15m Type of PC accessories: hub USB Kind of connector: HDMI socket; Jack 3.5mm socket; microSD; RJ45 socket; SD; USB A socket x2; USB C plug; USB C socket x2 Version: USB 3.0 Colour: grey Cable length: 0.15m Insulation colour: black PC accessories features: PnP Number of ports: 9 Standard: Power Delivery; Quick Charge Software: compatible Android; compatible iPadOS; compatible Linux; compatible MAC-OS; compatible Windows Contact plating: nickel plated Enclosure material: ABS; aluminium | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| TQMTM5W8 | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |