TQM2N7002KCX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V
Qualification: AEC-Q101
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V
Power Dissipation (Max): 416mW (Ta)
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V
Qualification: AEC-Q101
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V
Power Dissipation (Max): 416mW (Ta)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
39+ | 0.46 EUR |
64+ | 0.28 EUR |
102+ | 0.17 EUR |
500+ | 0.13 EUR |
1000+ | 0.11 EUR |
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Technische Details TQM2N7002KCX RFG Taiwan Semiconductor Corporation
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 370mA (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V, Qualification: AEC-Q101, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V, Power Dissipation (Max): 416mW (Ta).
Weitere Produktangebote TQM2N7002KCX RFG nach Preis ab 0.07 EUR bis 0.56 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TQM2N7002KCX RFG | Hersteller : Taiwan Semiconductor | MOSFETs 60V, 0.37A, Single N-Channel Small-signal MOSFETs |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM2N7002KCX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V Qualification: AEC-Q101 Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V Power Dissipation (Max): 416mW (Ta) |
Produkt ist nicht verfügbar |
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TQM2N7002KCX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 416mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.37A Power dissipation: 416mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.7nC Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |