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TQM056NH04LCR RLG

TQM056NH04LCR RLG Taiwan Semiconductor Corporation

TQM056NH04LCR_C2309.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.94 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 2500
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Technische Details TQM056NH04LCR RLG Taiwan Semiconductor Corporation

Description: 40V, 54A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V, Power Dissipation (Max): 78.9W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TQM056NH04LCR RLG nach Preis ab 1 EUR bis 4.68 EUR

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Preis ohne MwSt
TQM056NH04LCR RLG TQM056NH04LCR RLG Hersteller : Taiwan Semiconductor Corporation TQM056NH04LCR_C2309.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.27 EUR
10+ 1.86 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 1 EUR
Mindestbestellmenge: 8
TQM056NH04LCR RLG TQM056NH04LCR RLG Hersteller : Taiwan Semiconductor TQM056NH04LCR_C2309.pdf MOSFET 40V, 54A, Single N-Channel Power MOSFET
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.68 EUR
10+ 3.92 EUR
25+ 3.71 EUR
100+ 3.17 EUR
250+ 3.01 EUR
500+ 2.83 EUR
1000+ 2.57 EUR
TQM056NH04LCR RLG TQM056NH04LCR RLG Hersteller : Taiwan Semiconductor tqm056nh04lcr_b2304.pdf Trans MOSFET N-CH 40V 54A Automotive AEC-Q101 8-Pin PDFN EP T/R
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