TQM043NH04LCR RLG

TQM043NH04LCR RLG Taiwan Semiconductor Corporation


TQM043NH04LCR_C2309.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.11 EUR
5000+ 1.07 EUR
Mindestbestellmenge: 2500
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Technische Details TQM043NH04LCR RLG Taiwan Semiconductor Corporation

Description: 40V, 54A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TQM043NH04LCR RLG nach Preis ab 1.17 EUR bis 2.71 EUR

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TQM043NH04LCR RLG TQM043NH04LCR RLG Hersteller : Taiwan Semiconductor Corporation TQM043NH04LCR_C2309.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.05 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 8
TQM043NH04LCR RLG TQM043NH04LCR RLG Hersteller : Taiwan Semiconductor TQM043NH04LCR_C2309.pdf MOSFETs 40V, 54A, Single N-Channel Power MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.71 EUR
2500+ 2.31 EUR
10000+ 1.24 EUR
Mindestbestellmenge: 2
TQM043NH04LCR RLG Hersteller : Taiwan Semiconductor tqm043nh04lcr_a2301.pdf Trans MOSFET N-CH Si 40V 113A Automotive 8-Pin PDFN-U EP
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)