TQM032NH04CR RLG

TQM032NH04CR RLG Taiwan Semiconductor Corporation


TQM032NH04CR_C2309.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.24 EUR
5000+1.19 EUR
Mindestbestellmenge: 2500
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Technische Details TQM032NH04CR RLG Taiwan Semiconductor Corporation

Description: 40V, 81A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-PDFNU (4.9x5.75), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote TQM032NH04CR RLG nach Preis ab 1.24 EUR bis 3.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TQM032NH04CR RLG TQM032NH04CR RLG Hersteller : Taiwan Semiconductor Corporation TQM032NH04CR_C2309.pdf Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
10+2.29 EUR
100+1.82 EUR
500+1.54 EUR
1000+1.31 EUR
Mindestbestellmenge: 7
TQM032NH04CR RLG TQM032NH04CR RLG Hersteller : Taiwan Semiconductor TQM032NH04CR_C2309.pdf MOSFETs 40V, 81A, Single N-Channel Power MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.27 EUR
10+2.52 EUR
100+1.85 EUR
250+1.80 EUR
500+1.47 EUR
1000+1.35 EUR
2500+1.24 EUR
TQM032NH04CR RLG Hersteller : Taiwan Semiconductor tqm032nh04cr_b2304.pdf Trans MOSFET N-CH Si 40V 143A Automotive AEC-Q101 8-Pin PDFN EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)