Produkte > PJM
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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PJM | auf Bestellung 920 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJM2301PSA-S | PJSEMI | Transistor P-Channel MOSFET; -20V; 12V; 180mOhm; -2A; 0,7W; -55°C~150°C; Odpowiednik: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486; PJM2301PSA-S SOT23 PJSEMI TPJM2301PSA-S PJS Anzahl je Verpackung: 100 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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PJM36000S12 | Schneider Electric | Description: AUTOMATIC MOLDED CASE SWTICH 600 Packaging: Box Current Rating (Amps): 1.2kA Mounting Type: Chassis Mount Illumination: None Actuator Type: Lever Breaker Type: Thermal Magnetic Voltage Rating - AC: 600 V Number of Poles: 3 | Produkt ist nicht verfügbar | |||||||||||||||
PJM600 | PJM | 03+ DIP8 | auf Bestellung 84 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
PJM600CD | auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMA1000F-12 | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 12V 84A | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1000F-12 | Cosel USA, Inc. | Description: AC/DC CONVERTER 12V 1008W Packaging: Bulk Power (Watts): 1008W Features: Adjustable Output, PFC, Universal Input Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO Efficiency: 85% Voltage - Output 1: 12V Part Status: Active Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 84 A | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1000F-24 | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 24V 42A | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1000F-24 | Cosel USA, Inc. | Description: AC/DC CONVERTER 24V 1008W Packaging: Bulk Power (Watts): 1008W Features: Adjustable Output, PFC, Universal Input Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO Efficiency: 88% Voltage - Output 1: 24V Part Status: Active Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 42 A | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1000F-36 | Cosel USA, Inc. | Description: AC/DC CONVERTER 36V 1008W Packaging: Bulk Power (Watts): 1008W Features: Adjustable Output, PFC, Universal Input Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO Efficiency: 88% Voltage - Output 1: 36V Part Status: Active Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 28 A | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1000F-36 | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 36V 28A | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1000F-48 | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 48V 21A | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1000F-48 | Cosel USA, Inc. | Description: AC/DC CONVERTER 48V 1008W Power (Watts): 1008W Features: Adjustable Output, PFC, Universal Input Packaging: Bulk Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO Efficiency: 88% Voltage - Output 1: 48V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 21 A | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1500F-12 | Cosel | Switching Power Supplies 1500W 12V 125A Medical, Enclosed | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1500F-24 | Cosel | Switching Power Supplies 1536W 24V 64A Medical, Enclosed | auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1500F-36 | Cosel | Switching Power Supplies 1512W 36V 42A Medical, Enclosed | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA1500F-48 | Cosel Europe GmbH | PJMA1500F-48 | Produkt ist nicht verfügbar | |||||||||||||||
PJMA1500F-48 | Cosel | Switching Power Supplies 1536W 48V 32A Medical, Enclosed | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA300F-12 | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 82% Voltage - Output 1: 12V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 25 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-12 | Cosel | Switching Power Supplies 300W 12V 25A Medical | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA300F-12-C | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed, Conformal Coated Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 82% Voltage - Output 1: 12V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 25 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-12-F4 | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 82% Voltage - Output 1: 12V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 25 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-12-G | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 82% Voltage - Output 1: 12V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 25 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-12-R | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Remote On/Off, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 82% Voltage - Output 1: 12V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 25 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-12-V | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: Adjustable Output, PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 82% Voltage - Output 1: 12V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 25 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-24 | Cosel | Switching Power Supplies 300W 24V 12.5A Medical | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA300F-24 | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 24V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 12.5 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-24-C | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed, Conformal Coated Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 24V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 12.5 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-24-F4 | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 24V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 12.5 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-24-G | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 24V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 12.5 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-24-R | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: PFC, Remote On/Off, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 24V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 12.5 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-24-V | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 300W Features: Adjustable Output, PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 24V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 12.5 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-36 | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 87% Voltage - Output 1: 36V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 8.4 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-36-C | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed, Conformal Coated Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 87% Voltage - Output 1: 36V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 8.4 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-36-F4 | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 87% Voltage - Output 1: 36V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 8.4 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-36-G | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 87% Voltage - Output 1: 36V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 8.4 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-36-R | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Remote On/Off, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 87% Voltage - Output 1: 36V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 8.4 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-36-V | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: Adjustable Output, PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 87% Voltage - Output 1: 36V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 8.4 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-48 | Cosel | Switching Power Supplies 302.4W 48V 6.3A Medical | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA300F-48 | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 48V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 6.3 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-48-C | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed, Conformal Coated Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 48V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 6.3 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-48-F4 | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 48V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 6.3 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-48-G | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 48V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 6.3 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-48-R | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: PFC, Remote On/Off, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 48V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 6.3 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA300F-48-V | Cosel USA, Inc. | Description: AC/DC PS (ENCLOSED TYPE) Power (Watts): 302W Features: Adjustable Output, PFC, Universal Input Packaging: Bulk Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO, UKCA Efficiency: 86% Voltage - Output 1: 48V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 6.3 A | Produkt ist nicht verfügbar | |||||||||||||||
PJMA600F-12 | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W, 12V 50A | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
PJMA600F-12 | Cosel USA, Inc. | Description: AC/DC CONVERTER 12V 600W Power (Watts): 600W Features: Adjustable Output, PFC, Universal Input Packaging: Bulk Size / Dimension: 8.46" L x 4.72" W x 2.40" H (214.9mm x 119.9mm x 61.0mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO Efficiency: 84% Voltage - Output 1: 12V Part Status: Active Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 50 A | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA600F-24 | Cosel USA, Inc. | Description: AC/DC CONVERTER 24V 600W | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA600F-24 | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 24V 25A | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
PJMA600F-36 | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 36V 16.7A | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA600F-36 | Cosel USA, Inc. | Description: AC/DC CONVERTER 36V 601W | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA600F-48 | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 48V 12.5A | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA600F-48 | Cosel USA, Inc. | Description: AC/DC CONVERTER 48V 600W Power (Watts): 600W Features: Adjustable Output, PFC, Universal Input Packaging: Bulk Size / Dimension: 8.46" L x 4.72" W x 2.40" H (214.9mm x 119.9mm x 61.0mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -20°C ~ 70°C (With Derating) Applications: Medical Approval Agency: CE, cURus, DEMKO Efficiency: 88% Voltage - Output 1: 48V Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1 Current - Output 1: 12.5 A | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMA600F-48 | Cosel Europe GmbH | AC-DC Power Supplies Medical Type | Produkt ist nicht verfügbar | |||||||||||||||
PJMA600F-48-C | Cosel | Modular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 48V 12.5A with Conformal Coating | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMB050N10NS2_R2_00601 | Panjit | Infineon | Produkt ist nicht verfügbar | |||||||||||||||
PJMB130N65EC-R2 | Panjit | MOSFET TO-263/MOS/TO/NFET-650DCMNH | Produkt ist nicht verfügbar | |||||||||||||||
PJMB130N65EC-T0 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJMB130N65EC_R2_00601 | Panjit | MOSFETs 650V 130mohm 29A Easy to driver SJ MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJMB210N65EC-R2 | Panjit | MOSFETs TO263 650V 19A N-CH SJUNC | Produkt ist nicht verfügbar | |||||||||||||||
PJMB210N65EC_R2_00601 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMB210N65EC_R2_00601 | Panjit | MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET | auf Bestellung 560 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMB210N65EC_R2_00601 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMB210N65EC_R2_00601 | Panjit International Inc. | Description: 650V/ 390MOHM / 10A/ EASY TO DRI Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V | auf Bestellung 740 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMB210N65EC_R2_00601 | Panjit International Inc. | Description: 650V/ 390MOHM / 10A/ EASY TO DRI Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
PJMB390N65EC-R2 | Panjit | MOSFETs TO263 650V 10A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMB390N65EC-T0 | Panjit | MOSFETs TO263 650V 10A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMB390N65EC_R2_00601 | Panjit International Inc. | Description: 650V/ 390MOHM / 10A/ EASY TO DRI Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
PJMB390N65EC_R2_00601 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO263 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMB390N65EC_R2_00601 | Panjit International Inc. | Description: 650V/ 390MOHM / 10A/ EASY TO DRI Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V | auf Bestellung 587 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMB390N65EC_R2_00601 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO263 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMB390N65EC_R2_00601 | Panjit | MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET | auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMB390N65EC_T0_00601 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO263 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMB390N65EC_T0_00601 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO263 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ12A-AU_R1_007A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23 Application: automotive industry Max. off-state voltage: 8.5V Semiconductor structure: common anode; double Breakdown voltage: 11.4...12.6V Leakage current: 0.2µA Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Mounting: SMD Case: SOT23 | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ12A-AU_R1_007A1 | Panjit | ESD Suppressors / TVS Diodes ESD,8.5V,Uni,2CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ12A-AU_R1_007A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23 Application: automotive industry Max. off-state voltage: 8.5V Semiconductor structure: common anode; double Breakdown voltage: 11.4...12.6V Leakage current: 0.2µA Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ15A-AU_R1_007A1 | Panjit | ESD Suppressors / TVS Diodes ESD,12V,Uni,2CH | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ15A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ15A-AU-R1 Transil diodes - arrays | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ15V | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMBZ15V-AU_R1_000A1 | Panjit International Inc. | Description: DUAL TVS ZENER FOR ESD/TRANSIENT Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Frequency: 80pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOT-23 Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 25W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ15V-AU_R1_000A1 | Panjit | 12V,ESD Protection,SOT-23,UNI | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ15V-AU_R1_000A1 | Panjit International Inc. | Description: DUAL TVS ZENER FOR ESD/TRANSIENT Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Frequency: 80pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOT-23 Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 25W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 5975 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ15V-AU_R2_000A1 | Panjit | 12V ESD Protection UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ15VD | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMBZ15VT/R | auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMBZ15V_R1_00001 | Panjit International Inc. | Description: DUAL TVS ZENER FOR ESD/TRANSIENT Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 80pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOT-23 Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 25W Power Line Protection: No Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ15V_R1_00001 | Panjit International Inc. | Description: DUAL TVS ZENER FOR ESD/TRANSIENT Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 80pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOT-23 Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 25W Power Line Protection: No Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ15V_R1_00001 | Panjit | 12V,ESD Protection,SOT-23,UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ15V_R1_10001 | Panjit | 12V ESD Protection UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ15V_R2_00001 | Panjit | 12V ESD Protection UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ15V_R2_10001 | Panjit | 12V ESD Protection UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ18A-AU_R1_007A1 | Panjit | ESD Suppressors / TVS Diodes ESD,14.5V,Uni,2CH | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ18A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ18A-AU-R1 Transil diodes - arrays | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ20A-AU_R1_007A1 | Panjit | ESD Suppressors / TVS Diodes ESD,17V,Uni,2CH | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ27A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ27A-AU-R1 Transil diodes - arrays | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27A-AU_R1_007A1 | Panjit | ESD Suppressors / TVS Diodes ESD,22V,Uni,2CH | auf Bestellung 9000 Stücke: Lieferzeit 122-126 Tag (e) |
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PJMBZ27V | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMBZ27V-AU_R1_000A1 | Panjit | Zener Diodes 22V ESD Protection UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V-AU_R1_000A1 | Panjit International Inc. | Description: DUAL TVS ZENER FOR ESD/TRANSIENT | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ27V-AU_R1_000A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; SOT23; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V-AU_R1_000A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; SOT23; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V-AU_R1_000A1 | Panjit International Inc. | Description: DUAL TVS ZENER FOR ESD/TRANSIENT | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ27V-AU_R2_000A1 | PanJit Semiconductor | PJMBZ27V-AU-R2 Transil diodes - arrays | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V-AU_R2_000A1 | Panjit | Zener Diodes /US/TR/13"/HF/12K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27VC | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMBZ27V_R1_00001 | Panjit | Zener Diodes 22V ESD Protection UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V_R1_00001 | Panjit International Inc. | Description: DUAL TVS ZENER FOR ESD/TRANSIENT | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V_R1_00001 | Panjit International Inc. | Description: DUAL TVS ZENER FOR ESD/TRANSIENT | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V_R1_10001 | Panjit | Zener Diodes US/TR/7"/RoHS/3K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V_R2_00001 | Panjit | Zener Diodes /US/TR/13"/HF/12K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ27V_R2_10001 | Panjit | ESD Suppressors / TVS Diodes 22V ESD Protection UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ33A-AU-R1-007A1 | Panjit | SOT-23/TVS/TEA-01T/PJMBZ33A-AU | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ33A-AU_R1_007A1 | Panjit International Inc. | Description: ESD,26V, SOT-23,UNI,2CH Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 870mA Voltage - Reverse Standoff (Typ): 26V (Max) Supplier Device Package: SOT-23 Unidirectional Channels: 2 Voltage - Breakdown (Min): 31.35V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ33A-AU_R1_007A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23 Application: automotive industry Breakdown voltage: 31.35...34.65V Leakage current: 50nA Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Max. off-state voltage: 26V Semiconductor structure: common anode; double | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ33A-AU_R1_007A1 | Panjit | ESD Protection Diodes / TVS Diodes ESD,26V,Uni,2CH | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ33A-AU_R1_007A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23 Application: automotive industry Breakdown voltage: 31.35...34.65V Leakage current: 50nA Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Max. off-state voltage: 26V Semiconductor structure: common anode; double Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ33A-AU_R1_007A1 | Panjit International Inc. | Description: ESD,26V, SOT-23,UNI,2CH Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 870mA Voltage - Reverse Standoff (Typ): 26V (Max) Supplier Device Package: SOT-23 Unidirectional Channels: 2 Voltage - Breakdown (Min): 31.35V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 11900 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ5V6 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMBZ5V6A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ5V6A-AU-R1 Transil diodes - arrays | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ5V6A-AU_R1_007A1 | Panjit | ESD Protection Diodes / TVS Diodes ESD,3V,Uni,2CH | auf Bestellung 8967 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMBZ6V2 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMBZ6V2A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ6V2A-AU-R1 Transil diodes - arrays | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ6V8 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
PJMBZ6V8A-AU_R1_007A1 | Panjit | ESD Protection Diodes / TVS Diodes ESD,4.5V,Uni,2CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ6V8A-AU_R1_007A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23 Type of diode: TVS array Peak pulse power dissipation: 24W Max. off-state voltage: 4.5V Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ6V8A-AU_R1_007A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23 Type of diode: TVS array Peak pulse power dissipation: 24W Max. off-state voltage: 4.5V Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ9V1A-AU_R1_007A1 | Panjit | ESD Suppressors / TVS Diodes ESD,6V,Uni,2CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ9V1A-AU_R1_007A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Mounting: SMD Case: SOT23 Leakage current: 0.3µA Breakdown voltage: 8.65...9.56V Semiconductor structure: common anode; double Max. off-state voltage: 6V Type of diode: TVS array Features of semiconductor devices: ESD protection Application: automotive industry Peak pulse power dissipation: 24W Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||
PJMBZ9V1A-AU_R1_007A1 | PanJit Semiconductor | Category: Transil diodes - arrays Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Mounting: SMD Case: SOT23 Leakage current: 0.3µA Breakdown voltage: 8.65...9.56V Semiconductor structure: common anode; double Max. off-state voltage: 6V Type of diode: TVS array Features of semiconductor devices: ESD protection Application: automotive industry Peak pulse power dissipation: 24W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMD280N60E1-L2 | Panjit | Array | Produkt ist nicht verfügbar | |||||||||||||||
PJMD280N60E1_L2_00601 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMD280N60E1_L2_00601 | Panjit International Inc. | Description: 600V/ 280M / 13.8A/ EASY TO DRIV Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||
PJMD280N60E1_L2_00601 | Panjit | MOSFETs 600V/ 280mohms / 13.8A/ Easy to driver SJ MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 178-182 Tag (e) |
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PJMD280N60E1_L2_00601 | Panjit International Inc. | Description: 600V/ 280M / 13.8A/ EASY TO DRIV Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | |||||||||||||||
PJMD280N60E1_L2_00601 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMD360N60EC-L2 | Panjit | MOSFETs TO252 600V 11A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMD360N60EC_L2_00001 | Panjit International Inc. | Description: 600V SUPER JUNCTION MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V | auf Bestellung 5985 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD360N60EC_L2_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 2488 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD360N60EC_L2_00001 | Panjit International Inc. | Description: 600V SUPER JUNCTION MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD360N60EC_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMD360N60EC_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMD390N65EC-L2 | Panjit | MOSFETs TO252 650V 10A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMD390N65EC_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMD390N65EC_L2_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V | auf Bestellung 5940 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD390N65EC_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMD390N65EC_L2_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD390N65EC_L2_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD580N60E1-L2 | Panjit | MOSFETs TO252 600V 8A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMD580N60E1_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMD580N60E1_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMD600N65E1_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Power dissipation: 54W On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21.9A Drain-source voltage: 650V Drain current: 7.3A | Produkt ist nicht verfügbar | |||||||||||||||
PJMD600N65E1_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Power dissipation: 54W On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21.9A Drain-source voltage: 650V Drain current: 7.3A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMD900N60EC-L2 | Panjit | MOSFETs TO252 650V 5A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMD900N60EC_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMD900N60EC_L2_00001 | Panjit | MOSFET 22V,ESD Protection,SOT-23,UNI | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD900N60EC_L2_00001 | Panjit International Inc. | Description: 600V SUPER JUNCITON MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Power Dissipation (Max): 47.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V | auf Bestellung 5835 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD900N60EC_L2_00001 | Panjit International Inc. | Description: 600V SUPER JUNCITON MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Power Dissipation (Max): 47.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD900N60EC_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMD990N65EC-L2 | Panjit | MOSFETs TO252 650V 4.7A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMD990N65EC_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 47.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMD990N65EC_L2_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 2935 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD990N65EC_L2_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V Power Dissipation (Max): 47.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD990N65EC_L2_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 47.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMD990N65EC_L2_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V Power Dissipation (Max): 47.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF099N60EC-T0 | Panjit | Array | Produkt ist nicht verfügbar | |||||||||||||||
PJMF099N60EC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Case: ITO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF099N60EC_T0_00601 | Panjit International Inc. | Description: 600V/ 99M / 39A/ EASY TO DRIVER Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF099N60EC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Case: ITO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF099N60EC_T0_00601 | Panjit | MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF105N60FRC_T0_00601 | Panjit International Inc. | Description: 600V/ 105M / 35A/ SJ MOSFET WITH Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
PJMF120N60EC-T0 | Panjit | MOSFETs ITO-220AB-F/MOS/NFET-600FCTMNH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF120N60EC_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF120N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 33W Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF120N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 33W Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF120N60EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 833 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF125N60FRC_T0_00601 | Panjit | MOSFETs 600V/ 125mohms / 30A/ SJ MOSFET with Fast Recovery Qrr/trr / Ruggednss | Produkt ist nicht verfügbar | |||||||||||||||
PJMF125N60FRC_T0_00601 | Panjit International Inc. | Description: 600V/ 125M / 30A/ SJ MOSFET WITH Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
PJMF130N65EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF130N65EC_T0_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V | auf Bestellung 1976 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF130N65EC_T0_006A1 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Case: ITO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF130N65EC_T0_006A1 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Case: ITO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF190N60E1-T0 | Panjit | MOSFET ITO-220AB-F/MOS/NFET-600FCTMNH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF190N60E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 38W Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF190N60E1_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCITON MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V | auf Bestellung 1931 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF190N60E1_T0_00001 | Panjit | MOSFET 22V,ESD Protection,SOT-23,UNI | auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF190N60E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 38W Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF190N60E1_T0_00201 | Panjit | MOSFETs 600V 190mohm Super Junction Easy versio | auf Bestellung 1963 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF210N65EC-T0 | Panjit | MOSFETs TO220 650V 19A N-CH SJUNC | Produkt ist nicht verfügbar | |||||||||||||||
PJMF210N65EC_T0_00601 | Panjit | MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET | auf Bestellung 1921 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF210N65EC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 32W Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF210N65EC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 32W Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF210N65EC_T0_00601 | Panjit International Inc. | Description: 650V/ 390MOHM / 10A/ EASY TO DRI Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V | auf Bestellung 1978 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF280N60E1-T0 | Panjit | MOSFETs TO220 600V 13.8A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF280N60E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF280N60E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF280N60E1_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF280N60E1_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCITON MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 926 pF @ 400 V | auf Bestellung 1966 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF280N60E1_T0_00201 | Panjit | MOSFETs 600V 280mohm Super Junction Easy versio | auf Bestellung 1983 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF280N65E1-T0 | Panjit | MOSFETs TO220 650V 13.8A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF280N65E1_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMF280N65E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 35.7W Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF280N65E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 35.7W Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF280N65E1_T0_00001 | Panjit International Inc. | Description: 650V SUPER JUNCITON MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 400 V | auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF280N65E1_T0_00201 | Panjit | MOSFETs 650V 280mohm Super Junction Easy versio | auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF360N60E1-T0 | Panjit | MOSFETs TO220 600V 11A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF360N60E1_T0_00001 | Panjit International Inc. | Description: 600V/ 360MOHM SUPER JUNCTION EAS Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
PJMF360N60E1_T0_00001 | Panjit | MOSFETs 600V/ 360mohm Super Junction Easy version Gen.1 | Produkt ist nicht verfügbar | |||||||||||||||
PJMF360N60E1_T0_00201 | Panjit | MOSFETs 600V/ 360mohm Super Junction Easy versio | Produkt ist nicht verfügbar | |||||||||||||||
PJMF360N60EC-T0 | Panjit | MOSFETs TO220 600V 11A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF360N60EC_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF360N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF360N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF360N60EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 1999 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF380N65E1-T0 | Panjit | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||
PJMF380N65E1_T0_00001 | Panjit International Inc. | Description: 650V/ 380MOHM SUPER JUNCTION EAS Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 769 pF @ 400 V | auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF380N65E1_T0_00001 | Panjit | MOSFETs 650V/ 380mohm Super Junction Easy version Gen.1 | Produkt ist nicht verfügbar | |||||||||||||||
PJMF380N65E1_T0_00201 | Panjit | MOSFETs 650V/ 380mohm Super Junction Easy versio | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF390N65EC-T0 | Panjit | MOSFETs TO220 650V 10A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF390N65EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 29.5W Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF390N65EC_T0_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 29.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V | auf Bestellung 1786 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF390N65EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 1298 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF390N65EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 29.5W Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF580N60E1-T0 | Panjit | MOSFETs TO220 600V 8A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF580N60E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF580N60E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF580N60E1_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMF580N60E1_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCITON MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V | auf Bestellung 1956 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF580N60E1_T0_00201 | Panjit | MOSFETs 600V 580mohm Super Junction Easy versio | auf Bestellung 1997 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF600N65E1-T0 | Panjit | MOSFET ITO-220AB-F/MOS/NFET-650FCTMNH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF600N65E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Pulsed drain current: 21.9A Power dissipation: 32W Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF600N65E1_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Pulsed drain current: 21.9A Power dissipation: 32W Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMF600N65E1_T0_00001 | Panjit International Inc. | Description: 650V SUPER JUNCITON MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 554 pF @ 400 V | auf Bestellung 1958 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF600N65E1_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF600N65E1_T0_00201 | Panjit | MOSFETs 650V 600mohm Super Junction Easy versio | auf Bestellung 1985 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF900N60E1_T0_00001 | Panjit International Inc. | Description: 600V/ 900MOHM SUPER JUNCTION EAS Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V Power Dissipation (Max): 23.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V | auf Bestellung 1996 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF900N60E1_T0_00001 | Panjit International Inc. | Description: 600V/ 900MOHM SUPER JUNCTION EAS Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V Power Dissipation (Max): 23.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V | auf Bestellung 1996 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
PJMF900N60E1_T0_00001 | Panjit | MOSFETs 600V/ 900mohm Super Junction Easy version Gen.1 | Produkt ist nicht verfügbar | |||||||||||||||
PJMF900N60E1_T0_00201 | Panjit | MOSFETs 600V/ 900mohm Super Junction Easy versio | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF900N60EC_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Power Dissipation (Max): 22.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V | auf Bestellung 1986 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF900N60EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF900N65E1_T0_00001 | Panjit | MOSFETs 650V/ 900mohm Super Junction Easy version Gen.1 | Produkt ist nicht verfügbar | |||||||||||||||
PJMF900N65E1_T0_00001 | Panjit International Inc. | Description: 650V/ 900MOHM SUPER JUNCTION EAS Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V Power Dissipation (Max): 25.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 400 V | auf Bestellung 1945 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF900N65E1_T0_00201 | Panjit | MOSFETs 650V/ 900mohm Super Junction Easy versio | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF990N65EC-T0 | Panjit | MOSFETs TO220 650V 4.7A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMF990N65EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF990N65EC_T0_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V Power Dissipation (Max): 22.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF990N65EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMF990N65EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMH040N60EC-T0 | Panjit | Array | Produkt ist nicht verfügbar | |||||||||||||||
PJMH040N60EC_T0_00201 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMH040N60EC_T0_00201 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMH074N60FRC | Panjit International Inc. | Description: 600V/ 74M / 53A/ FAST RECOVERY Q Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
PJMH074N60FRC | Panjit | MOSFETs 600V 74m ohms 53A Fast Recovery Qrr trr Ruggednss | auf Bestellung 1470 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH074N60FRC-T0 | Panjit | MOSFETs TO247 600V 53A N-CH SUPER J | Produkt ist nicht verfügbar | |||||||||||||||
PJMH074N60FRCH-T0 | Panjit | TO247 600V 53A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJMH074N60FRCH_T0_00601 | Panjit | MOSFETs 600V 74mohms 53A Fast Recovery Qrr trr Ruggednss | Produkt ist nicht verfügbar | |||||||||||||||
PJMH074N60FRCH_T0_00601 | Panjit International Inc. | Description: 600V/ 74M / 53A/ FAST RECOVERY Q Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH074N60FRC_T0_00601 | Panjit International Inc. | Description: 600V/ 74MOHM / 53A/ FAST RECOVER Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V | auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMH074N60FRC_T0_00601 | Panjit | MOSFETs 600V 74mohm 53A Fast Recovery Qrr trr SJ MOSFET | auf Bestellung 1491 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMH099N60EC_T0_00601 | Panjit | MOSFETs 600V/ 99mohms / 39A/ Easy to driver SJ MOSFET | auf Bestellung 1500 Stücke: Lieferzeit 178-182 Tag (e) |
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PJMH099N60EC_T0_00601 | Panjit International Inc. | Description: 600V/ 99M / 39A/ EASY TO DRIVER Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
PJMH120N60EC-T0 | Panjit | MOSFETs TO247 600V 30A N-CH SUPER J | Produkt ist nicht verfügbar | |||||||||||||||
PJMH120N60EC_T0_00601 | Panjit International Inc. | Description: 600V/ 120MOHM / 30A/ EASY TO DRI Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V | auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH120N60EC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMH120N60EC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMH120N60EC_T0_00601 | Panjit | MOSFETs 600V 120mohm 30A Easy to driver SJ MOSFET | auf Bestellung 1484 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH190N60E1-T0 | Panjit | MOSFET TO-247AD-3LD/NFET-600CTUMNH | Produkt ist nicht verfügbar | |||||||||||||||
PJMH190N60E1_T0_00601 | Panjit International Inc. | Description: 600V/ 190MOHM / 20.6A/ EASY TO D Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V | auf Bestellung 1406 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH190N60E1_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Pulsed drain current: 62A Power dissipation: 160W Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMH190N60E1_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Pulsed drain current: 62A Power dissipation: 160W Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMH190N60E1_T0_00601 | Panjit | MOSFET 600V 190mohm 20.6A Easy to driver SJ MOSFET | auf Bestellung 1497 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMK040N60EC_T0_00201 | Panjit | MOSFETs 600V/ 40mOhms / 71A/ Easy to driver SJ MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJMK074N60FRCH_T0_00201 | Panjit | MOSFETs 600V/ 74mOhms / 53A/ Fast Recovery Qrr/trr SJ MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJMP099N60EC-T0 | Panjit | Array | Produkt ist nicht verfügbar | |||||||||||||||
PJMP099N60EC_T0_00601 | Panjit | MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET | auf Bestellung 1997 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP099N60EC_T0_00601 | Panjit International Inc. | Description: 600V/ 99M / 39A/ EASY TO DRIVER Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V Power Dissipation (Max): 308W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP105N60FRC_T0_00601 | Panjit International Inc. | Description: 600V/ 105M / 35A/ SJ MOSFET WITH Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
PJMP120N60EC-T0 | Panjit | MOSFETs TO-220AB-L/MOS/NFET-600CTMNH | Produkt ist nicht verfügbar | |||||||||||||||
PJMP120N60EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 844 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP120N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMP120N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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PJMP120N60EC_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V | auf Bestellung 1965 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP125N60FRC_T0_00601 | Panjit | MOSFETs 600V/ 125mohms / 30A/ SJ MOSFET with Fast Recovery Qrr/trr / Ruggednss | Produkt ist nicht verfügbar | |||||||||||||||
PJMP125N60FRC_T0_00601 | Panjit International Inc. | Description: 600V/ 125M / 30A/ SJ MOSFET WITH Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
PJMP130N65EC-T0 | Panjit | MOSFET TO-220AB-L/MOS/NFET-650FCTMNH | Produkt ist nicht verfügbar | |||||||||||||||
PJMP130N65EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP130N65EC_T0_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP210N65EC-T0 | Panjit | MOSFETs TO220 650V 19A N-CH SJUNC | Produkt ist nicht verfügbar | |||||||||||||||
PJMP210N65EC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMP210N65EC_T0_00601 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMP210N65EC_T0_00601 | Panjit | MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET | auf Bestellung 2973 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP210N65EC_T0_00601 | Panjit International Inc. | Description: 650V/ 390MOHM / 10A/ EASY TO DRI Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V | auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP360N60EC-T0 | Panjit | MOSFETs TO220 600V 11A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMP360N60EC_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V | auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP360N60EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP360N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMP360N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMP390N65EC-T0 | Panjit | MOSFETs TO220 650V 10A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMP390N65EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMP390N65EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMP390N65EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP390N65EC_T0_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V | auf Bestellung 1996 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP900N60EC-T0 | Panjit | MOSFET TO-220AB-L/MOS/NFET-600CTMNH | Produkt ist nicht verfügbar | |||||||||||||||
PJMP900N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMP900N60EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMP900N60EC_T0_00001 | Panjit International Inc. | Description: 600V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Power Dissipation (Max): 47.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V | auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP900N60EC_T0_00001 | Panjit | MOSFET 22V,ESD Protection,SOT-23,UNI | Produkt ist nicht verfügbar | |||||||||||||||
PJMP990N65EC-T0 | Panjit | MOSFETs TO220 650V 4.7A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
PJMP990N65EC_T0_00001 | Panjit | MOSFETs 22V,ESD Protection,SOT-23,UNI | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP990N65EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJMP990N65EC_T0_00001 | PanJit Semiconductor | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJMP990N65EC_T0_00001 | Panjit International Inc. | Description: 650V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V Power Dissipation (Max): 47.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMQC040N10NS2_R2_00601 | Panjit International Inc. | Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM | Produkt ist nicht verfügbar | |||||||||||||||
PJMQC040N10NS2_R2_00601 | Panjit International Inc. | Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM | Produkt ist nicht verfügbar | |||||||||||||||
PJMQC040N10NS2_R2_00601 | Panjit | ESD Suppressors / TVS Diodes 100V 4.4mohm Excellect low FOM MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 178-182 Tag (e) |
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