Produkte > PJM

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
PJM
auf Bestellung 920 Stücke:
Lieferzeit 21-28 Tag (e)
PJM2301PSA-SPJSEMITransistor P-Channel MOSFET; -20V; 12V; 180mOhm; -2A; 0,7W; -55°C~150°C; Odpowiednik: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486; PJM2301PSA-S SOT23 PJSEMI TPJM2301PSA-S PJS
Anzahl je Verpackung: 100 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.14 EUR
Mindestbestellmenge: 200
PJM36000S12Schneider ElectricDescription: AUTOMATIC MOLDED CASE SWTICH 600
Packaging: Box
Current Rating (Amps): 1.2kA
Mounting Type: Chassis Mount
Illumination: None
Actuator Type: Lever
Breaker Type: Thermal Magnetic
Voltage Rating - AC: 600 V
Number of Poles: 3
Produkt ist nicht verfügbar
PJM600PJM03+ DIP8
auf Bestellung 84 Stücke:
Lieferzeit 21-28 Tag (e)
PJM600CD
auf Bestellung 32000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMA1000F-12CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 12V 84A
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+646.45 EUR
5+ 626.31 EUR
10+ 606.11 EUR
25+ 585.87 EUR
50+ 565.66 EUR
100+ 545.46 EUR
250+ 532.1 EUR
PJMA1000F-12Cosel USA, Inc.Description: AC/DC CONVERTER 12V 1008W
Packaging: Bulk
Power (Watts): 1008W
Features: Adjustable Output, PFC, Universal Input
Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 85%
Voltage - Output 1: 12V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 84 A
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+641.98 EUR
PJMA1000F-24CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 24V 42A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+646.45 EUR
5+ 626.31 EUR
10+ 606.11 EUR
25+ 585.87 EUR
50+ 565.66 EUR
100+ 545.46 EUR
250+ 532.1 EUR
PJMA1000F-24Cosel USA, Inc.Description: AC/DC CONVERTER 24V 1008W
Packaging: Bulk
Power (Watts): 1008W
Features: Adjustable Output, PFC, Universal Input
Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 88%
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 42 A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+641.98 EUR
PJMA1000F-36Cosel USA, Inc.Description: AC/DC CONVERTER 36V 1008W
Packaging: Bulk
Power (Watts): 1008W
Features: Adjustable Output, PFC, Universal Input
Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 88%
Voltage - Output 1: 36V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 28 A
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+641.98 EUR
5+ 621.91 EUR
PJMA1000F-36CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 36V 28A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+646.45 EUR
5+ 626.31 EUR
10+ 606.11 EUR
25+ 585.87 EUR
50+ 565.66 EUR
100+ 545.46 EUR
250+ 532.1 EUR
PJMA1000F-48CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 48V 21A
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+646.45 EUR
5+ 626.31 EUR
10+ 606.11 EUR
25+ 585.87 EUR
50+ 565.66 EUR
100+ 545.46 EUR
250+ 532.1 EUR
PJMA1000F-48Cosel USA, Inc.Description: AC/DC CONVERTER 48V 1008W
Power (Watts): 1008W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 88%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 21 A
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
1+641.98 EUR
5+ 621.91 EUR
10+ 601.85 EUR
PJMA1500F-12CoselSwitching Power Supplies 1500W 12V 125A Medical, Enclosed
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+912.63 EUR
5+ 883.19 EUR
10+ 853.69 EUR
25+ 824.24 EUR
50+ 794.8 EUR
100+ 775.35 EUR
PJMA1500F-24CoselSwitching Power Supplies 1536W 24V 64A Medical, Enclosed
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
1+912.63 EUR
5+ 883.19 EUR
10+ 853.69 EUR
25+ 824.24 EUR
50+ 794.8 EUR
100+ 775.37 EUR
250+ 775.35 EUR
PJMA1500F-36CoselSwitching Power Supplies 1512W 36V 42A Medical, Enclosed
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+912.63 EUR
5+ 883.19 EUR
10+ 853.69 EUR
25+ 824.24 EUR
50+ 794.8 EUR
100+ 775.35 EUR
PJMA1500F-48Cosel Europe GmbHPJMA1500F-48
Produkt ist nicht verfügbar
PJMA1500F-48CoselSwitching Power Supplies 1536W 48V 32A Medical, Enclosed
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+912.63 EUR
5+ 883.19 EUR
10+ 853.69 EUR
25+ 824.24 EUR
50+ 794.8 EUR
100+ 775.35 EUR
PJMA300F-12Cosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 82%
Voltage - Output 1: 12V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 25 A
Produkt ist nicht verfügbar
PJMA300F-12CoselSwitching Power Supplies 300W 12V 25A Medical
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+238.76 EUR
5+ 231.39 EUR
10+ 224.05 EUR
20+ 216.69 EUR
50+ 209.39 EUR
100+ 202.01 EUR
200+ 198.33 EUR
PJMA300F-12-CCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed, Conformal Coated
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 82%
Voltage - Output 1: 12V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 25 A
Produkt ist nicht verfügbar
PJMA300F-12-F4Cosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 82%
Voltage - Output 1: 12V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 25 A
Produkt ist nicht verfügbar
PJMA300F-12-GCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 82%
Voltage - Output 1: 12V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 25 A
Produkt ist nicht verfügbar
PJMA300F-12-RCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Remote On/Off, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 82%
Voltage - Output 1: 12V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 25 A
Produkt ist nicht verfügbar
PJMA300F-12-VCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 82%
Voltage - Output 1: 12V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 25 A
Produkt ist nicht verfügbar
PJMA300F-24CoselSwitching Power Supplies 300W 24V 12.5A Medical
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
1+238.76 EUR
5+ 231.39 EUR
10+ 224.05 EUR
20+ 216.69 EUR
50+ 209.39 EUR
100+ 202.01 EUR
200+ 198.33 EUR
PJMA300F-24Cosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 24V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 12.5 A
Produkt ist nicht verfügbar
PJMA300F-24-CCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed, Conformal Coated
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 24V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 12.5 A
Produkt ist nicht verfügbar
PJMA300F-24-F4Cosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 24V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 12.5 A
Produkt ist nicht verfügbar
PJMA300F-24-GCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 24V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 12.5 A
Produkt ist nicht verfügbar
PJMA300F-24-RCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: PFC, Remote On/Off, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 24V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 12.5 A
Produkt ist nicht verfügbar
PJMA300F-24-VCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 300W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 24V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 12.5 A
Produkt ist nicht verfügbar
PJMA300F-36Cosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 87%
Voltage - Output 1: 36V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 8.4 A
Produkt ist nicht verfügbar
PJMA300F-36-CCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed, Conformal Coated
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 87%
Voltage - Output 1: 36V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 8.4 A
Produkt ist nicht verfügbar
PJMA300F-36-F4Cosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 87%
Voltage - Output 1: 36V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 8.4 A
Produkt ist nicht verfügbar
PJMA300F-36-GCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 87%
Voltage - Output 1: 36V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 8.4 A
Produkt ist nicht verfügbar
PJMA300F-36-RCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Remote On/Off, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 87%
Voltage - Output 1: 36V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 8.4 A
Produkt ist nicht verfügbar
PJMA300F-36-VCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 87%
Voltage - Output 1: 36V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 8.4 A
Produkt ist nicht verfügbar
PJMA300F-48CoselSwitching Power Supplies 302.4W 48V 6.3A Medical
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+238.76 EUR
5+ 231.39 EUR
10+ 224.05 EUR
20+ 216.69 EUR
50+ 209.39 EUR
100+ 202.01 EUR
200+ 198.33 EUR
PJMA300F-48Cosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 6.3 A
Produkt ist nicht verfügbar
PJMA300F-48-CCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed, Conformal Coated
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 6.3 A
Produkt ist nicht verfügbar
PJMA300F-48-F4Cosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 6.3 A
Produkt ist nicht verfügbar
PJMA300F-48-GCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 6.3 A
Produkt ist nicht verfügbar
PJMA300F-48-RCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: PFC, Remote On/Off, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 6.3 A
Produkt ist nicht verfügbar
PJMA300F-48-VCosel USA, Inc.Description: AC/DC PS (ENCLOSED TYPE)
Power (Watts): 302W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 7.48" L x 4.02" W x 1.61" H (190.0mm x 102.1mm x 40.9mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO, UKCA
Efficiency: 86%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 6.3 A
Produkt ist nicht verfügbar
PJMA600F-12CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W, 12V 50A
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
PJMA600F-12Cosel USA, Inc.Description: AC/DC CONVERTER 12V 600W
Power (Watts): 600W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 8.46" L x 4.72" W x 2.40" H (214.9mm x 119.9mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 84%
Voltage - Output 1: 12V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 50 A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+334.98 EUR
PJMA600F-24Cosel USA, Inc.Description: AC/DC CONVERTER 24V 600W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+349.11 EUR
PJMA600F-24CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 24V 25A
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
PJMA600F-36CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 36V 16.7A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+301.82 EUR
5+ 292.35 EUR
10+ 282.94 EUR
25+ 273.49 EUR
PJMA600F-36Cosel USA, Inc.Description: AC/DC CONVERTER 36V 601W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+336.65 EUR
PJMA600F-48CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 48V 12.5A
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+311.48 EUR
5+ 301.77 EUR
10+ 292.04 EUR
25+ 282.3 EUR
50+ 272.55 EUR
100+ 262.82 EUR
250+ 256.4 EUR
PJMA600F-48Cosel USA, Inc.Description: AC/DC CONVERTER 48V 600W
Power (Watts): 600W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 8.46" L x 4.72" W x 2.40" H (214.9mm x 119.9mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 88%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 12.5 A
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+300.87 EUR
PJMA600F-48Cosel Europe GmbHAC-DC Power Supplies Medical Type
Produkt ist nicht verfügbar
PJMA600F-48-CCoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 48V 12.5A with Conformal Coating
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+323.22 EUR
5+ 313.16 EUR
10+ 303.05 EUR
25+ 292.93 EUR
50+ 282.81 EUR
100+ 272.73 EUR
250+ 266.04 EUR
PJMB050N10NS2_R2_00601PanjitInfineon
Produkt ist nicht verfügbar
PJMB130N65EC-R2PanjitMOSFET TO-263/MOS/TO/NFET-650DCMNH
Produkt ist nicht verfügbar
PJMB130N65EC-T0PanjitMOSFET
Produkt ist nicht verfügbar
PJMB130N65EC_R2_00601PanjitMOSFETs 650V 130mohm 29A Easy to driver SJ MOSFET
Produkt ist nicht verfügbar
PJMB210N65EC-R2PanjitMOSFETs TO263 650V 19A N-CH SJUNC
Produkt ist nicht verfügbar
PJMB210N65EC_R2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMB210N65EC_R2_00601PanjitMOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.12 EUR
10+ 3.1 EUR
100+ 2.22 EUR
500+ 2.11 EUR
800+ 1.58 EUR
2400+ 1.56 EUR
PJMB210N65EC_R2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMB210N65EC_R2_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
10+ 3.1 EUR
100+ 2.14 EUR
Mindestbestellmenge: 4
PJMB210N65EC_R2_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
Produkt ist nicht verfügbar
PJMB390N65EC-R2PanjitMOSFETs TO263 650V 10A N-CH
Produkt ist nicht verfügbar
PJMB390N65EC-T0PanjitMOSFETs TO263 650V 10A N-CH
Produkt ist nicht verfügbar
PJMB390N65EC_R2_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
Produkt ist nicht verfügbar
PJMB390N65EC_R2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMB390N65EC_R2_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
10+ 3.1 EUR
100+ 2.14 EUR
Mindestbestellmenge: 4
PJMB390N65EC_R2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMB390N65EC_R2_00601PanjitMOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.12 EUR
10+ 3.1 EUR
100+ 2.22 EUR
500+ 2.09 EUR
800+ 1.58 EUR
2400+ 1.56 EUR
PJMB390N65EC_T0_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMB390N65EC_T0_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMBZ12A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23
Application: automotive industry
Max. off-state voltage: 8.5V
Semiconductor structure: common anode; double
Breakdown voltage: 11.4...12.6V
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
PJMBZ12A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,8.5V,Uni,2CH
Produkt ist nicht verfügbar
PJMBZ12A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23
Application: automotive industry
Max. off-state voltage: 8.5V
Semiconductor structure: common anode; double
Breakdown voltage: 11.4...12.6V
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMBZ15A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,12V,Uni,2CH
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.64 EUR
10+ 0.54 EUR
100+ 0.34 EUR
1000+ 0.23 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJMBZ15A-AU_R1_007A1PanJit SemiconductorPJMBZ15A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ15V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ15V-AU_R1_000A1Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 25W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
PJMBZ15V-AU_R1_000A1Panjit 12V,ESD Protection,SOT-23,UNI
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.59 EUR
10+ 0.41 EUR
100+ 0.2 EUR
1000+ 0.12 EUR
3000+ 0.1 EUR
9000+ 0.077 EUR
24000+ 0.072 EUR
Mindestbestellmenge: 5
PJMBZ15V-AU_R1_000A1Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 25W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5975 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
43+ 0.41 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 30
PJMBZ15V-AU_R2_000A1Panjit 12V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ15VD
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ15VT/R
auf Bestellung 2800 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ15V_R1_00001Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
Mindestbestellmenge: 33
PJMBZ15V_R1_00001Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
PJMBZ15V_R1_00001Panjit 12V,ESD Protection,SOT-23,UNI
Produkt ist nicht verfügbar
PJMBZ15V_R1_10001Panjit 12V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ15V_R2_00001Panjit 12V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ15V_R2_10001Panjit 12V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ18A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,14.5V,Uni,2CH
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.62 EUR
10+ 0.45 EUR
100+ 0.23 EUR
1000+ 0.15 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJMBZ18A-AU_R1_007A1PanJit SemiconductorPJMBZ18A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ20A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,17V,Uni,2CH
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.64 EUR
10+ 0.54 EUR
100+ 0.34 EUR
1000+ 0.23 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJMBZ27A-AU_R1_007A1PanJit SemiconductorPJMBZ27A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ27A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,22V,Uni,2CH
auf Bestellung 9000 Stücke:
Lieferzeit 122-126 Tag (e)
5+0.62 EUR
10+ 0.45 EUR
100+ 0.23 EUR
1000+ 0.15 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJMBZ27V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ27V-AU_R1_000A1PanjitZener Diodes 22V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ27V-AU_R1_000A1Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
37+ 0.49 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 28
PJMBZ27V-AU_R1_000A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJMBZ27V-AU_R1_000A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Produkt ist nicht verfügbar
PJMBZ27V-AU_R1_000A1Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
PJMBZ27V-AU_R2_000A1PanJit SemiconductorPJMBZ27V-AU-R2 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ27V-AU_R2_000A1PanjitZener Diodes /US/TR/13"/HF/12K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ27VC
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ27V_R1_00001PanjitZener Diodes 22V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ27V_R1_00001Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Produkt ist nicht verfügbar
PJMBZ27V_R1_00001Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Produkt ist nicht verfügbar
PJMBZ27V_R1_10001PanjitZener Diodes US/TR/7"/RoHS/3K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ27V_R2_00001PanjitZener Diodes /US/TR/13"/HF/12K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ27V_R2_10001PanjitESD Suppressors / TVS Diodes 22V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ33A-AU-R1-007A1Panjit SOT-23/TVS/TEA-01T/PJMBZ33A-AU
Produkt ist nicht verfügbar
PJMBZ33A-AU_R1_007A1Panjit International Inc.Description: ESD,26V, SOT-23,UNI,2CH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 870mA
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 31.35V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 3000
PJMBZ33A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Application: automotive industry
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
PJMBZ33A-AU_R1_007A1PanjitESD Protection Diodes / TVS Diodes ESD,26V,Uni,2CH
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.65 EUR
10+ 0.42 EUR
100+ 0.2 EUR
1000+ 0.15 EUR
3000+ 0.13 EUR
9000+ 0.12 EUR
24000+ 0.11 EUR
Mindestbestellmenge: 5
PJMBZ33A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Application: automotive industry
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMBZ33A-AU_R1_007A1Panjit International Inc.Description: ESD,26V, SOT-23,UNI,2CH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 870mA
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 31.35V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
43+ 0.41 EUR
100+ 0.26 EUR
500+ 0.19 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 27
PJMBZ5V6
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ5V6A-AU_R1_007A1PanJit SemiconductorPJMBZ5V6A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ5V6A-AU_R1_007A1PanjitESD Protection Diodes / TVS Diodes ESD,3V,Uni,2CH
auf Bestellung 8967 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.67 EUR
10+ 0.59 EUR
100+ 0.3 EUR
1000+ 0.21 EUR
3000+ 0.13 EUR
9000+ 0.11 EUR
Mindestbestellmenge: 5
PJMBZ6V2
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ6V2A-AU_R1_007A1PanJit SemiconductorPJMBZ6V2A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ6V8
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ6V8A-AU_R1_007A1PanjitESD Protection Diodes / TVS Diodes ESD,4.5V,Uni,2CH
Produkt ist nicht verfügbar
PJMBZ6V8A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Max. off-state voltage: 4.5V
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Produkt ist nicht verfügbar
PJMBZ6V8A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Max. off-state voltage: 4.5V
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMBZ9V1A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,6V,Uni,2CH
Produkt ist nicht verfügbar
PJMBZ9V1A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 0.3µA
Breakdown voltage: 8.65...9.56V
Semiconductor structure: common anode; double
Max. off-state voltage: 6V
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Application: automotive industry
Peak pulse power dissipation: 24W
Kind of package: reel; tape
Produkt ist nicht verfügbar
PJMBZ9V1A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 0.3µA
Breakdown voltage: 8.65...9.56V
Semiconductor structure: common anode; double
Max. off-state voltage: 6V
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Application: automotive industry
Peak pulse power dissipation: 24W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD280N60E1-L2PanjitArray
Produkt ist nicht verfügbar
PJMD280N60E1_L2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD280N60E1_L2_00601Panjit International Inc.Description: 600V/ 280M / 13.8A/ EASY TO DRIV
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
PJMD280N60E1_L2_00601PanjitMOSFETs 600V/ 280mohms / 13.8A/ Easy to driver SJ MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 178-182 Tag (e)
2+2.18 EUR
10+ 1.78 EUR
100+ 1.39 EUR
500+ 1.18 EUR
1000+ 1 EUR
3000+ 0.85 EUR
Mindestbestellmenge: 2
PJMD280N60E1_L2_00601Panjit International Inc.Description: 600V/ 280M / 13.8A/ EASY TO DRIV
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
PJMD280N60E1_L2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD360N60EC-L2PanjitMOSFETs TO252 600V 11A N-CH
Produkt ist nicht verfügbar
PJMD360N60EC_L2_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.28 EUR
10+ 4.13 EUR
100+ 2.9 EUR
500+ 2.38 EUR
1000+ 2.21 EUR
Mindestbestellmenge: 3
PJMD360N60EC_L2_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.39 EUR
10+ 4.1 EUR
25+ 4.03 EUR
100+ 3.01 EUR
500+ 2.46 EUR
1000+ 2.29 EUR
2500+ 2.27 EUR
PJMD360N60EC_L2_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.2 EUR
Mindestbestellmenge: 3000
PJMD360N60EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD360N60EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD390N65EC-L2PanjitMOSFETs TO252 650V 10A N-CH
Produkt ist nicht verfügbar
PJMD390N65EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD390N65EC_L2_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.99 EUR
10+ 6.12 EUR
100+ 5.46 EUR
Mindestbestellmenge: 2
PJMD390N65EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD390N65EC_L2_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.78 EUR
10+ 5.35 EUR
25+ 5.23 EUR
100+ 4.42 EUR
250+ 4.31 EUR
500+ 4.19 EUR
1000+ 3.96 EUR
PJMD390N65EC_L2_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.46 EUR
Mindestbestellmenge: 3000
PJMD580N60E1-L2PanjitMOSFETs TO252 600V 8A N-CH
Produkt ist nicht verfügbar
PJMD580N60E1_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD580N60E1_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD600N65E1_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 54W
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Drain current: 7.3A
Produkt ist nicht verfügbar
PJMD600N65E1_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 54W
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Drain current: 7.3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PJMD900N60EC-L2PanjitMOSFETs TO252 650V 5A N-CH
Produkt ist nicht verfügbar
PJMD900N60EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD900N60EC_L2_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.96 EUR
10+ 2.46 EUR
100+ 1.97 EUR
250+ 1.81 EUR
500+ 1.65 EUR
1000+ 1.4 EUR
2500+ 1.33 EUR
PJMD900N60EC_L2_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
auf Bestellung 5835 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
10+ 2.68 EUR
100+ 2.14 EUR
500+ 1.81 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 6
PJMD900N60EC_L2_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.46 EUR
Mindestbestellmenge: 3000
PJMD900N60EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD990N65EC-L2PanjitMOSFETs TO252 650V 4.7A N-CH
Produkt ist nicht verfügbar
PJMD990N65EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD990N65EC_L2_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.96 EUR
10+ 2.46 EUR
100+ 1.97 EUR
250+ 1.81 EUR
500+ 1.65 EUR
1000+ 1.46 EUR
6000+ 1.29 EUR
PJMD990N65EC_L2_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.69 EUR
10+ 8.63 EUR
100+ 6.33 EUR
500+ 5.4 EUR
Mindestbestellmenge: 2
PJMD990N65EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD990N65EC_L2_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+5.4 EUR
Mindestbestellmenge: 6000
PJMF099N60EC-T0PanjitArray
Produkt ist nicht verfügbar
PJMF099N60EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF099N60EC_T0_00601Panjit International Inc.Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.87 EUR
10+ 10.19 EUR
100+ 7.53 EUR
500+ 6.6 EUR
Mindestbestellmenge: 2
PJMF099N60EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF099N60EC_T0_00601PanjitMOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.83 EUR
10+ 11 EUR
50+ 9.96 EUR
100+ 9.17 EUR
250+ 8.62 EUR
500+ 8.08 EUR
1000+ 7.27 EUR
PJMF105N60FRC_T0_00601Panjit International Inc.Description: 600V/ 105M / 35A/ SJ MOSFET WITH
Packaging: Tube
Produkt ist nicht verfügbar
PJMF120N60EC-T0PanjitMOSFETs ITO-220AB-F/MOS/NFET-600FCTMNH
Produkt ist nicht verfügbar
PJMF120N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.99 EUR
10+ 6.12 EUR
100+ 5.46 EUR
Mindestbestellmenge: 2
PJMF120N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 33W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF120N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 33W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF120N60EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 833 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.31 EUR
10+ 6.34 EUR
100+ 5.88 EUR
PJMF125N60FRC_T0_00601PanjitMOSFETs 600V/ 125mohms / 30A/ SJ MOSFET with Fast Recovery Qrr/trr / Ruggednss
Produkt ist nicht verfügbar
PJMF125N60FRC_T0_00601Panjit International Inc.Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Produkt ist nicht verfügbar
PJMF130N65EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.64 EUR
10+ 6.55 EUR
100+ 5.88 EUR
PJMF130N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.2 EUR
10+ 6.27 EUR
100+ 5.59 EUR
Mindestbestellmenge: 2
PJMF130N65EC_T0_006A1PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF130N65EC_T0_006A1PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF190N60E1-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-600FCTMNH
Produkt ist nicht verfügbar
PJMF190N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF190N60E1_T0_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 1931 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.75 EUR
50+ 3.76 EUR
100+ 3.22 EUR
500+ 2.87 EUR
1000+ 2.45 EUR
Mindestbestellmenge: 4
PJMF190N60E1_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.72 EUR
10+ 3.96 EUR
25+ 3.75 EUR
100+ 3.2 EUR
250+ 3.03 EUR
500+ 2.85 EUR
1000+ 2.6 EUR
PJMF190N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF190N60E1_T0_00201PanjitMOSFETs 600V 190mohm Super Junction Easy versio
auf Bestellung 1963 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.72 EUR
10+ 3.96 EUR
25+ 3.75 EUR
100+ 3.2 EUR
250+ 3.03 EUR
500+ 2.85 EUR
1000+ 2.6 EUR
PJMF210N65EC-T0PanjitMOSFETs TO220 650V 19A N-CH SJUNC
Produkt ist nicht verfügbar
PJMF210N65EC_T0_00601PanjitMOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 1921 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.17 EUR
10+ 1.74 EUR
100+ 1.56 EUR
PJMF210N65EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF210N65EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF210N65EC_T0_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
auf Bestellung 1978 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
50+ 2.35 EUR
100+ 2.12 EUR
500+ 1.72 EUR
1000+ 1.58 EUR
Mindestbestellmenge: 4
PJMF280N60E1-T0PanjitMOSFETs TO220 600V 13.8A N-CH
Produkt ist nicht verfügbar
PJMF280N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF280N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF280N60E1_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.33 EUR
10+ 3.17 EUR
100+ 2.32 EUR
500+ 1.88 EUR
1000+ 1.74 EUR
2000+ 1.67 EUR
PJMF280N60E1_T0_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 926 pF @ 400 V
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.96 EUR
50+ 2.47 EUR
100+ 2.23 EUR
500+ 1.81 EUR
1000+ 1.67 EUR
Mindestbestellmenge: 4
PJMF280N60E1_T0_00201PanjitMOSFETs 600V 280mohm Super Junction Easy versio
auf Bestellung 1983 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.77 EUR
10+ 3.15 EUR
100+ 2.5 EUR
250+ 2.31 EUR
500+ 2.09 EUR
1000+ 1.9 EUR
2000+ 1.64 EUR
PJMF280N65E1-T0PanjitMOSFETs TO220 650V 13.8A N-CH
Produkt ist nicht verfügbar
PJMF280N65E1_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
Produkt ist nicht verfügbar
PJMF280N65E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF280N65E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF280N65E1_T0_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.8 EUR
10+ 2.48 EUR
100+ 1.72 EUR
500+ 1.7 EUR
Mindestbestellmenge: 5
PJMF280N65E1_T0_00201PanjitMOSFETs 650V 280mohm Super Junction Easy versio
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.1 EUR
10+ 3.41 EUR
100+ 2.71 EUR
250+ 2.52 EUR
500+ 2.27 EUR
1000+ 2.06 EUR
2000+ 1.8 EUR
PJMF360N60E1-T0PanjitMOSFETs TO220 600V 11A N-CH
Produkt ist nicht verfügbar
PJMF360N60E1_T0_00001Panjit International Inc.Description: 600V/ 360MOHM SUPER JUNCTION EAS
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 400 V
Produkt ist nicht verfügbar
PJMF360N60E1_T0_00001PanjitMOSFETs 600V/ 360mohm Super Junction Easy version Gen.1
Produkt ist nicht verfügbar
PJMF360N60E1_T0_00201PanjitMOSFETs 600V/ 360mohm Super Junction Easy versio
Produkt ist nicht verfügbar
PJMF360N60EC-T0PanjitMOSFETs TO220 600V 11A N-CH
Produkt ist nicht verfügbar
PJMF360N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.92 EUR
10+ 6.06 EUR
100+ 5.4 EUR
Mindestbestellmenge: 2
PJMF360N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF360N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF360N60EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.49 EUR
10+ 4.95 EUR
25+ 4.68 EUR
100+ 4 EUR
250+ 3.85 EUR
500+ 3.75 EUR
1000+ 3.61 EUR
PJMF380N65E1-T0PanjitMOSFETs
Produkt ist nicht verfügbar
PJMF380N65E1_T0_00001Panjit International Inc.Description: 650V/ 380MOHM SUPER JUNCTION EAS
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 769 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.33 EUR
10+ 2.15 EUR
100+ 1.48 EUR
500+ 1.42 EUR
Mindestbestellmenge: 6
PJMF380N65E1_T0_00001PanjitMOSFETs 650V/ 380mohm Super Junction Easy version Gen.1
Produkt ist nicht verfügbar
PJMF380N65E1_T0_00201PanjitMOSFETs 650V/ 380mohm Super Junction Easy versio
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.41 EUR
10+ 2.85 EUR
100+ 2.25 EUR
250+ 2.09 EUR
500+ 1.9 EUR
1000+ 1.72 EUR
2000+ 1.49 EUR
PJMF390N65EC-T0PanjitMOSFETs TO220 650V 10A N-CH
Produkt ist nicht verfügbar
PJMF390N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 29.5W
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF390N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 29.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.63 EUR
10+ 3.05 EUR
100+ 2.24 EUR
Mindestbestellmenge: 4
PJMF390N65EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1298 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.05 EUR
10+ 3.04 EUR
100+ 2.46 EUR
PJMF390N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 29.5W
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF580N60E1-T0PanjitMOSFETs TO220 600V 8A N-CH
Produkt ist nicht verfügbar
PJMF580N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF580N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF580N60E1_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
Produkt ist nicht verfügbar
PJMF580N60E1_T0_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V
auf Bestellung 1956 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
50+ 1.74 EUR
100+ 1.57 EUR
500+ 1.25 EUR
1000+ 1.15 EUR
Mindestbestellmenge: 5
PJMF580N60E1_T0_00201PanjitMOSFETs 600V 580mohm Super Junction Easy versio
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.69 EUR
10+ 2.22 EUR
100+ 1.74 EUR
500+ 1.46 EUR
1000+ 1.25 EUR
2000+ 1.06 EUR
10000+ 1.05 EUR
Mindestbestellmenge: 2
PJMF600N65E1-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-650FCTMNH
Produkt ist nicht verfügbar
PJMF600N65E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Pulsed drain current: 21.9A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF600N65E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Pulsed drain current: 21.9A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF600N65E1_T0_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 554 pF @ 400 V
auf Bestellung 1958 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+ 2.27 EUR
100+ 1.81 EUR
500+ 1.53 EUR
1000+ 1.3 EUR
Mindestbestellmenge: 7
PJMF600N65E1_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.97 EUR
10+ 1.58 EUR
100+ 1.3 EUR
500+ 1.22 EUR
Mindestbestellmenge: 2
PJMF600N65E1_T0_00201PanjitMOSFETs 650V 600mohm Super Junction Easy versio
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.8 EUR
10+ 2.32 EUR
100+ 1.85 EUR
250+ 1.7 EUR
500+ 1.55 EUR
1000+ 1.4 EUR
2000+ 1.22 EUR
Mindestbestellmenge: 2
PJMF900N60E1_T0_00001Panjit International Inc.Description: 600V/ 900MOHM SUPER JUNCTION EAS
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 23.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
13+ 1.4 EUR
100+ 0.95 EUR
500+ 0.81 EUR
Mindestbestellmenge: 8
PJMF900N60E1_T0_00001Panjit International Inc.Description: 600V/ 900MOHM SUPER JUNCTION EAS
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 23.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
PJMF900N60E1_T0_00001PanjitMOSFETs 600V/ 900mohm Super Junction Easy version Gen.1
Produkt ist nicht verfügbar
PJMF900N60E1_T0_00201PanjitMOSFETs 600V/ 900mohm Super Junction Easy versio
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.16 EUR
10+ 1.78 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 1 EUR
2000+ 0.85 EUR
Mindestbestellmenge: 2
PJMF900N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.72 EUR
10+ 3.11 EUR
100+ 2.3 EUR
Mindestbestellmenge: 4
PJMF900N60EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.5 EUR
10+ 2.94 EUR
100+ 2.36 EUR
250+ 2.25 EUR
500+ 2.13 EUR
1000+ 1.99 EUR
2000+ 1.67 EUR
PJMF900N65E1_T0_00001PanjitMOSFETs 650V/ 900mohm Super Junction Easy version Gen.1
Produkt ist nicht verfügbar
PJMF900N65E1_T0_00001Panjit International Inc.Description: 650V/ 900MOHM SUPER JUNCTION EAS
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 400 V
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
12+ 1.48 EUR
100+ 1 EUR
500+ 0.86 EUR
Mindestbestellmenge: 8
PJMF900N65E1_T0_00201PanjitMOSFETs 650V/ 900mohm Super Junction Easy versio
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.32 EUR
10+ 1.92 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.07 EUR
2000+ 0.91 EUR
Mindestbestellmenge: 2
PJMF990N65EC-T0PanjitMOSFETs TO220 650V 4.7A N-CH
Produkt ist nicht verfügbar
PJMF990N65EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.38 EUR
10+ 2.2 EUR
100+ 1.51 EUR
500+ 1.5 EUR
PJMF990N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 22.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.26 EUR
10+ 2.11 EUR
100+ 1.46 EUR
500+ 1.39 EUR
Mindestbestellmenge: 6
PJMF990N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF990N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMH040N60EC-T0PanjitArray
Produkt ist nicht verfügbar
PJMH040N60EC_T0_00201PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMH040N60EC_T0_00201PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMH074N60FRCPanjit International Inc.Description: 600V/ 74M / 53A/ FAST RECOVERY Q
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V
Produkt ist nicht verfügbar
PJMH074N60FRCPanjitMOSFETs 600V 74m ohms 53A Fast Recovery Qrr trr Ruggednss
auf Bestellung 1470 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.39 EUR
10+ 11.48 EUR
30+ 10.4 EUR
120+ 9.54 EUR
270+ 8.99 EUR
510+ 8.43 EUR
1020+ 7.59 EUR
PJMH074N60FRC-T0PanjitMOSFETs TO247 600V 53A N-CH SUPER J
Produkt ist nicht verfügbar
PJMH074N60FRCH-T0Panjit TO247 600V 53A N-CH MOSFET
Produkt ist nicht verfügbar
PJMH074N60FRCH_T0_00601PanjitMOSFETs 600V 74mohms 53A Fast Recovery Qrr trr Ruggednss
Produkt ist nicht verfügbar
PJMH074N60FRCH_T0_00601Panjit International Inc.Description: 600V/ 74M / 53A/ FAST RECOVERY Q
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.98 EUR
30+ 8.82 EUR
120+ 7.46 EUR
510+ 6.72 EUR
Mindestbestellmenge: 2
PJMH074N60FRC_T0_00601Panjit International Inc.Description: 600V/ 74MOHM / 53A/ FAST RECOVER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.35 EUR
10+ 10.65 EUR
30+ 9.23 EUR
120+ 7.94 EUR
270+ 7.37 EUR
510+ 7.01 EUR
1020+ 6.68 EUR
Mindestbestellmenge: 2
PJMH074N60FRC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMH074N60FRC_T0_00601PanjitMOSFETs 600V 74mohm 53A Fast Recovery Qrr trr SJ MOSFET
auf Bestellung 1491 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.33 EUR
10+ 11.04 EUR
30+ 9.54 EUR
120+ 8.22 EUR
270+ 7.62 EUR
510+ 7.25 EUR
1020+ 7.04 EUR
PJMH074N60FRC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMH099N60EC_T0_00601PanjitMOSFETs 600V/ 99mohms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 178-182 Tag (e)
1500+5.32 EUR
2520+ 5.02 EUR
Mindestbestellmenge: 1500
PJMH099N60EC_T0_00601Panjit International Inc.Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Produkt ist nicht verfügbar
PJMH120N60EC-T0PanjitMOSFETs TO247 600V 30A N-CH SUPER J
Produkt ist nicht verfügbar
PJMH120N60EC_T0_00601Panjit International Inc.Description: 600V/ 120MOHM / 30A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.94 EUR
10+ 6.72 EUR
30+ 5.74 EUR
120+ 4.85 EUR
270+ 4.46 EUR
510+ 4.21 EUR
1020+ 3.98 EUR
Mindestbestellmenge: 2
PJMH120N60EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMH120N60EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMH120N60EC_T0_00601PanjitMOSFETs 600V 120mohm 30A Easy to driver SJ MOSFET
auf Bestellung 1484 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.66 EUR
10+ 6.49 EUR
30+ 5.47 EUR
120+ 4.8 EUR
270+ 4.47 EUR
510+ 4.22 EUR
1020+ 3.98 EUR
PJMH190N60E1-T0PanjitMOSFET TO-247AD-3LD/NFET-600CTUMNH
Produkt ist nicht verfügbar
PJMH190N60E1_T0_00601Panjit International Inc.Description: 600V/ 190MOHM / 20.6A/ EASY TO D
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 1406 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.7 EUR
10+ 5.12 EUR
30+ 4.84 EUR
120+ 4.2 EUR
270+ 3.98 EUR
510+ 3.57 EUR
1020+ 3.01 EUR
Mindestbestellmenge: 4
PJMH190N60E1_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMH190N60E1_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMH190N60E1_T0_00601PanjitMOSFET 600V 190mohm 20.6A Easy to driver SJ MOSFET
auf Bestellung 1497 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.67 EUR
10+ 4.8 EUR
30+ 4.59 EUR
120+ 3.87 EUR
270+ 3.7 EUR
510+ 3.43 EUR
1020+ 2.94 EUR
PJMK040N60EC_T0_00201PanjitMOSFETs 600V/ 40mOhms / 71A/ Easy to driver SJ MOSFET
Produkt ist nicht verfügbar
PJMK074N60FRCH_T0_00201PanjitMOSFETs 600V/ 74mOhms / 53A/ Fast Recovery Qrr/trr SJ MOSFET
Produkt ist nicht verfügbar
PJMP099N60EC-T0PanjitArray
Produkt ist nicht verfügbar
PJMP099N60EC_T0_00601PanjitMOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.55 EUR
10+ 10.75 EUR
50+ 9.75 EUR
100+ 8.96 EUR
250+ 8.43 EUR
500+ 7.9 EUR
1000+ 7.13 EUR
PJMP099N60EC_T0_00601Panjit International Inc.Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 308W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.63 EUR
10+ 10.01 EUR
100+ 7.39 EUR
500+ 6.46 EUR
Mindestbestellmenge: 2
PJMP105N60FRC_T0_00601Panjit International Inc.Description: 600V/ 105M / 35A/ SJ MOSFET WITH
Packaging: Tube
Produkt ist nicht verfügbar
PJMP120N60EC-T0PanjitMOSFETs TO-220AB-L/MOS/NFET-600CTMNH
Produkt ist nicht verfügbar
PJMP120N60EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 844 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.81 EUR
PJMP120N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.95 EUR
32+ 2.29 EUR
34+ 2.16 EUR
Mindestbestellmenge: 19
PJMP120N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.95 EUR
32+ 2.29 EUR
34+ 2.16 EUR
1000+ 2.12 EUR
Mindestbestellmenge: 19
PJMP120N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 1965 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.72 EUR
10+ 3.11 EUR
100+ 2.3 EUR
Mindestbestellmenge: 4
PJMP125N60FRC_T0_00601PanjitMOSFETs 600V/ 125mohms / 30A/ SJ MOSFET with Fast Recovery Qrr/trr / Ruggednss
Produkt ist nicht verfügbar
PJMP125N60FRC_T0_00601Panjit International Inc.Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Produkt ist nicht verfügbar
PJMP130N65EC-T0PanjitMOSFET TO-220AB-L/MOS/NFET-650FCTMNH
Produkt ist nicht verfügbar
PJMP130N65EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.75 EUR
10+ 9.22 EUR
25+ 8.36 EUR
100+ 7.69 EUR
250+ 7.23 EUR
500+ 6.78 EUR
1000+ 6.42 EUR
PJMP130N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.13 EUR
10+ 6.21 EUR
100+ 5.53 EUR
Mindestbestellmenge: 2
PJMP210N65EC-T0PanjitMOSFETs TO220 650V 19A N-CH SJUNC
Produkt ist nicht verfügbar
PJMP210N65EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMP210N65EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP210N65EC_T0_00601PanjitMOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 2973 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.51 EUR
10+ 2.46 EUR
100+ 2.22 EUR
250+ 2.2 EUR
500+ 1.78 EUR
1000+ 1.69 EUR
2500+ 1.61 EUR
PJMP210N65EC_T0_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
50+ 2.38 EUR
100+ 2.14 EUR
500+ 1.73 EUR
Mindestbestellmenge: 4
PJMP360N60EC-T0PanjitMOSFETs TO220 600V 11A N-CH
Produkt ist nicht verfügbar
PJMP360N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.42 EUR
50+ 2.25 EUR
100+ 2.11 EUR
Mindestbestellmenge: 4
PJMP360N60EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.15 EUR
10+ 3.47 EUR
25+ 2.43 EUR
PJMP360N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMP360N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP390N65EC-T0PanjitMOSFETs TO220 650V 10A N-CH
Produkt ist nicht verfügbar
PJMP390N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMP390N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP390N65EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.66 EUR
10+ 2.43 EUR
Mindestbestellmenge: 2
PJMP390N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
10+ 1.88 EUR
100+ 1.29 EUR
500+ 1.2 EUR
Mindestbestellmenge: 7
PJMP900N60EC-T0PanjitMOSFET TO-220AB-L/MOS/NFET-600CTMNH
Produkt ist nicht verfügbar
PJMP900N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMP900N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP900N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.02 EUR
10+ 4.2 EUR
100+ 3.4 EUR
500+ 3.02 EUR
1000+ 2.59 EUR
Mindestbestellmenge: 4
PJMP900N60EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
Produkt ist nicht verfügbar
PJMP990N65EC-T0PanjitMOSFETs TO220 650V 4.7A N-CH
Produkt ist nicht verfügbar
PJMP990N65EC_T0_00001PanjitMOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.27 EUR
10+ 2.13 EUR
100+ 1.46 EUR
500+ 1.43 EUR
PJMP990N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMP990N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP990N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
10+ 2.04 EUR
100+ 1.41 EUR
500+ 1.33 EUR
Mindestbestellmenge: 6
PJMQC040N10NS2_R2_00601Panjit International Inc.Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Produkt ist nicht verfügbar
PJMQC040N10NS2_R2_00601Panjit International Inc.Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Produkt ist nicht verfügbar
PJMQC040N10NS2_R2_00601PanjitESD Suppressors / TVS Diodes 100V 4.4mohm Excellect low FOM MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 178-182 Tag (e)
1+4.33 EUR
10+ 3.92 EUR
100+ 3.15 EUR
500+ 2.59 EUR