PJMBZ12A-AU_R1_007A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23
Application: automotive industry
Max. off-state voltage: 8.5V
Semiconductor structure: common anode; double
Breakdown voltage: 11.4...12.6V
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
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Technische Details PJMBZ12A-AU_R1_007A1 PanJit Semiconductor
Category: Transil diodes - arrays, Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23, Application: automotive industry, Max. off-state voltage: 8.5V, Semiconductor structure: common anode; double, Breakdown voltage: 11.4...12.6V, Leakage current: 0.2µA, Kind of package: reel; tape, Type of diode: TVS array, Features of semiconductor devices: ESD protection, Peak pulse power dissipation: 40W, Mounting: SMD, Case: SOT23, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJMBZ12A-AU_R1_007A1
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Verfügbarkeit |
Preis ohne MwSt |
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PJMBZ12A-AU_R1_007A1 | Hersteller : Panjit |
ESD Suppressors / TVS Diodes ESD,8.5V,Uni,2CH |
Produkt ist nicht verfügbar |
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| PJMBZ12A-AU_R1_007A1 | Hersteller : PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23 Application: automotive industry Max. off-state voltage: 8.5V Semiconductor structure: common anode; double Breakdown voltage: 11.4...12.6V Leakage current: 0.2µA Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |