Produkte > NSV
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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NSV-BAT | Belimo | Description: 12V 1.2AH BATT 1=1, 2 REQUIRED Packaging: Box Voltage: 12 Type: Battery Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV12100UW3TCG | onsemi | Description: TRANS PNP 12V 1A 3WDFN Packaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 200MHz Supplier Device Package: 3-WDFN (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 740 mW | auf Bestellung 87000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV12100UW3TCG | onsemi | Description: TRANS PNP 12V 1A 3WDFN Packaging: Tape & Reel (TR) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 200MHz Supplier Device Package: 3-WDFN (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 740 mW | auf Bestellung 87000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV12100UW3TCG | ON Semiconductor | Trans GP BJT PNP 12V 1A 1100mW Automotive 3-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV12100UW3TCG | onsemi | Bipolar Transistors - BJT WDFN3 2*2 LOW VCE | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV12100XV6T1G | ON Semiconductor | Trans GP BJT PNP 12V 1A 500mW Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV12100XV6T1G | onsemi | Description: TRANS PNP 12V 1A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Supplier Device Package: SOT-563 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 650 mW | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV12100XV6T1G | onsemi | Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR | auf Bestellung 3999 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV12100XV6T1G | onsemi | Description: TRANS PNP 12V 1A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Supplier Device Package: SOT-563 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 650 mW | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV12200LT1G | onsemi | Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XT | auf Bestellung 2959 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV12200LT1G | onsemi | Description: TRANS PNP 12V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 540 mW Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV12200LT1G | ON Semiconductor | Trans GP BJT PNP 12V 2A 540mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV12200LT1G | onsemi | Description: TRANS PNP 12V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 540 mW Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C200LT1G | ON Semiconductor | Description: TRANS PNP 100V 2A SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C200LT1G | ON Semiconductor | Trans GP BJT PNP 100V 2A 710mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C200LT1G | onsemi | Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, 100 V, 3.0 A | auf Bestellung 2254 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C200LT1G | ON Semiconductor | auf Bestellung 2171 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV1C200MZ4T1G | ON Semiconductor | Trans GP BJT PNP 100V 2A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C200MZ4T1G | ON Semiconductor | Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN | auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV1C200MZ4T1G | onsemi | Description: TRANS PNP 100V 2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C200MZ4T1G | ON Semiconductor | auf Bestellung 835 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV1C200MZ4T1G | onsemi | Description: TRANS PNP 100V 2A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C200MZ4T1G | onsemi | Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, 100 V, 2.0 A | auf Bestellung 6828 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C201LT1G | ON Semiconductor | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV1C201LT1G | onsemi | Bipolar Transistors - BJT 100 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor | auf Bestellung 21638 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C201LT1G | ON Semiconductor | Trans GP BJT NPN 100V 2A 710mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C201LT1G | onsemi | Description: TRANS NPN 100V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 490 mW | auf Bestellung 17817 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C201LT1G | ON Semiconductor | Trans GP BJT NPN 100V 2A 710mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV1C201LT1G | ON Semiconductor | Trans GP BJT NPN 100V 2A 710mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C201LT1G | onsemi | Description: TRANS NPN 100V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 490 mW | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C201MZ4T1G | onsemi | Bipolar Transistors - BJT 2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor | auf Bestellung 54675 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C201MZ4T1G | ON Semiconductor | Trans GP BJT NPN 100V 2A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C201MZ4T1G | onsemi | Description: TRANS NPN 100V 2A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C201MZ4T1G | ON Semiconductor | Trans GP BJT NPN 100V 2A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV1C201MZ4T1G | ONSEMI | Description: ONSEMI - NSV1C201MZ4T1G - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 2 A, 800 mW, SOT-223, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 40hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 2A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 100V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) | auf Bestellung 3468 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV1C201MZ4T1G | ON Semiconductor | Trans GP BJT NPN 100V 2A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C201MZ4T1G | onsemi | Description: TRANS NPN 100V 2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW | auf Bestellung 16314 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C201MZ4T1G | ONSEMI | Description: ONSEMI - NSV1C201MZ4T1G - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 2 A, 800 mW, SOT-223, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 40hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 2A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 100V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) | auf Bestellung 3468 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV1C300ET4G | ON Semiconductor | Description: TRANS PNP 100V 3A 3DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C300ET4G | ON Semiconductor | Description: TRANS PNP 100V 3A 3DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C300ET4G | onsemi | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV1C300ET4G | ON-Semicoductor | PNP 3A 100V 33W 100MHz 120 < beta < 360 NSV1C300ET4G TNSV1C300et4g Anzahl je Verpackung: 25 Stücke | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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NSV1C300ET4G | ON Semiconductor | Description: TRANS PNP 100V 3A 3DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C301CTWG | onsemi | Bipolar Transistors - BJT 100 V, 3.0 A Low VCE(sat) NPN Bipolar Junction Transistor 100 V, 3 A, NPN Transistor, Automotive | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C301ET4G | onsemi | Description: TRANS NPN 100V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: DPAK Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.1 W Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C301ET4G | onsemi | Bipolar Transistors - BJT 3 A, 100 V Low VCE(sat) NPN Transistor | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C301ET4G | onsemi | Description: TRANS NPN 100V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: DPAK Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.1 W Qualification: AEC-Q101 | auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C301ET4G | ON Semiconductor | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1C301ET4G-VF01 | onsemi | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V | auf Bestellung 5846 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1C301ET4G-VF01 | onsemi | Description: TRANS NPN 100V 3A 3DPAK | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV1C301ET4G-VF01 | onsemi | Description: TRANS NPN 100V 3A 3DPAK | auf Bestellung 7485 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV1SS400T1G | onsemi | Description: DIODE GEN PURP 100V 200MA SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V Qualification: AEC-Q101 | auf Bestellung 79045 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1SS400T1G | ONSEMI | Description: ONSEMI - NSV1SS400T1G - Kleinsignaldiode, Einfach, 100 V, 200 mA, 1.2 V, 4 ns, 500 mA tariffCode: 85411000 Bauform - Diode: SOD-523 Durchlassstoßstrom: 500mA rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.2V Sperrverzögerungszeit: 4ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 100V Anzahl der Pins: 2Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 42520 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV1SS400T1G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 2-Pin SOD-523 T/R | auf Bestellung 11475 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV1SS400T1G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 2-Pin SOD-523 T/R | auf Bestellung 948000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV1SS400T1G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 2-Pin SOD-523 T/R | auf Bestellung 11475 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV1SS400T1G | onsemi | Description: DIODE GEN PURP 100V 200MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V Qualification: AEC-Q101 | auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1SS400T1G | ONSEMI | Description: ONSEMI - NSV1SS400T1G - Kleinsignaldiode, Einfach, 100 V, 200 mA, 1.2 V, 4 ns, 500 mA tariffCode: 85411000 Bauform - Diode: SOD-523 Durchlassstoßstrom: 500mA rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.2V Sperrverzögerungszeit: 4ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 100V Anzahl der Pins: 2Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 42520 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV1SS400T1G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 2-Pin SOD-523 T/R | auf Bestellung 3168000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV1SS400T1G | onsemi | Small Signal Switching Diodes SS SWDI 100V TR | auf Bestellung 164736 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1SS400T1G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 2-Pin SOD-523 T/R | auf Bestellung 948000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV1SS400T1G | ON Semiconductor | Rectifier Diode Small Signal Switching 0.2A 4ns Automotive 2-Pin SOD-523 T/R | auf Bestellung 1044000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV1SS400T1G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 2-Pin SOD-523 T/R | auf Bestellung 3168000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV1SS400T5G | onsemi | Diodes - General Purpose, Power, Switching Switching Diode, 100 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1SS400T5G | onsemi | Description: DIODE GEN PURP 100V 200MA SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V Qualification: AEC-Q101 | auf Bestellung 184000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1SS400T5G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 2-Pin SOD-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1SS400T5G | onsemi | Description: DIODE GEN PURP 100V 200MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V Qualification: AEC-Q101 | auf Bestellung 184000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV1SS400T5G | ONSEMI | Description: ONSEMI - NSV1SS400T5G - SWITCHING DIODE, 100 V SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV1SS400T5G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 2-Pin SOD-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20101JT1G | onsemi | Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20101JT1G | ON Semiconductor | Description: TRANS NPN 20V 1A 89SC3 | auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV20101JT1G | ON Semiconductor | Trans GP BJT NPN 20V 1A 300mW Automotive 3-Pin SC-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20200DMTWTBG | onsemi | Description: TRANS NPN 20V 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20200DMTWTBG | onsemi | Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20200DMTWTBG | onsemi | Description: TRANS NPN 20V 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20200DMTWTBG | ON Semiconductor | 20 V,2 A PNP GP BJT Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20200LT1G | onsemi | Description: TRANS PNP 20V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 460 mW | auf Bestellung 623740 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV20200LT1G | onsemi | Description: TRANS PNP 20V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 460 mW | auf Bestellung 621000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV20200LT1G | onsemi | Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR | auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV20201DMTWTBG | onsemi | Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20201DMTWTBG | ON Semiconductor | Description: TRANS NPN 20V 2A SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20201LT1G | onsemi | Description: TRANS NPN 20V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 460 mW | auf Bestellung 5960 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV20201LT1G | onsemi | Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) XTR | auf Bestellung 1842 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV20201LT1G | ON Semiconductor | Trans GP BJT NPN 20V 2A 540mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV20201LT1G | onsemi | Description: TRANS NPN 20V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 460 mW | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV20201LT1G | ON Semiconductor | Trans GP BJT NPN 20V 2A 540mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV2029M3T5G | ON Semiconductor | Description: TRANS PNP 50V 0.15A SOT723 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV2029M3T5G | onsemi | Bipolar Transistors - BJT SS XTR PNP SOT723MTK | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV2029M3T5G | ON Semiconductor | Trans GP BJT PNP 50V 0.15A 265mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV204NL-CC-B100K-9.5G; моно; с LED-подсветкой; линейная характеристика; 0,1Вт; 40,7x6мм; TOMY | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||||
NSV2SA2029M3T5G | onsemi | Description: TRANS PNP 50V 0.1A SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500pA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 265 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV2SA2029M3T5G | onsemi | Bipolar Transistors - BJT SS TRANSISTOR PNP SOT723 | auf Bestellung 6328 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV2SA2029M3T5G | ON Semiconductor | Trans GP BJT PNP 50V 0.1A 265mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV2SA2029M3T5G | onsemi | Description: TRANS PNP 50V 0.1A SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500pA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 265 mW | auf Bestellung 2875 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV2SA2029M3T5G | ON Semiconductor | auf Bestellung 7985 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV2SC5658M3T5G | onsemi | Description: TRANS NPN 50V 0.15A SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW | auf Bestellung 32000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV2SC5658M3T5G | onsemi | Bipolar Transistors - BJT GENERAL PURPOSE | auf Bestellung 20658 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV2SC5658M3T5G | ON Semiconductor | Trans GP BJT NPN 50V 0.15A 260mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV2SC5658M3T5G | onsemi | Description: TRANS NPN 50V 0.15A SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW | auf Bestellung 54156 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV30100LT1G | onsemi | Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, 30 V, 1.0 A | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV30100LT1G | onsemi | Description: NSV30100 - LOW VCE(SAT) TRANSIST Packaging: Bulk | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40200LT1G | ON Semiconductor | Trans GP BJT PNP 40V 2A 710mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40200LT1G | onsemi | Bipolar Transistors - BJT LESHANBE (CN1) XTR | auf Bestellung 6724 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40200LT1G | onsemi | Description: TRANS PNP 40V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 460 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40200LT1G | ONSEMI | Description: ONSEMI - NSV40200LT1G - Bipolarer Einzeltransistor (BJT), PNP, 40 V, 2 A, 540 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 150hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 2A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 540mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 40V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1795 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV40200LT1G | ON Semiconductor | Trans GP BJT PNP 40V 2A 710mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40200LT1G | ON Semiconductor | Trans GP BJT PNP 40V 2A 710mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV40200LT1G | onsemi | Description: TRANS PNP 40V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 460 mW | auf Bestellung 805 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40200LT1G | ONSEMI | Description: ONSEMI - NSV40200LT1G - Bipolarer Einzeltransistor (BJT), PNP, 40 V, 2 A, 540 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 150hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 2A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 540mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 40V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 1905 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV40200UW6T1G | ON Semiconductor | Trans GP BJT PNP 40V 2A 3000mW Automotive 6-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40200UW6T1G | ON Semiconductor | Trans GP BJT PNP 40V 2A 3000mW Automotive AEC-Q101 6-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40200UW6T1G | onsemi | Description: TRANS PNP 40V 2A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: 6-WDFN (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 875 mW | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40200UW6T1G | ONSEMI | Description: ONSEMI - NSV40200UW6T1G - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV40200UW6T1G | ON Semiconductor | auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV40200UW6T1G | onsemi | Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, -40 V, 4.0 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40200UW6T1G | onsemi | Description: TRANS PNP 40V 2A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: 6-WDFN (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 875 mW | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40201LT1G | ONSEMI | Description: ONSEMI - NSV40201LT1G - Bipolarer Einzeltransistor (BJT), NPN, 40 V, 2 A, 460 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 180 hazardous: false rohsPhthalatesCompliant: YES DC-Stromverstärkung hFE: 180 Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 2 usEccn: EAR99 euEccn: NLR Verlustleistung: 460 Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 40 productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 150 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3140 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV40201LT1G | onsemi | Description: TRANS NPN 40V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 460 mW | auf Bestellung 10182 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40201LT1G | onsemi | Bipolar Transistors - BJT 40V NPN LOW VCE(SAT) XTR | auf Bestellung 7507 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40201LT1G | onsemi | Description: TRANS NPN 40V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 460 mW | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40201LT1G | ONSEMI | Description: ONSEMI - NSV40201LT1G - Bipolarer Einzeltransistor (BJT), NPN, 40 V, 2 A, 460 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 180 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 2 usEccn: EAR99 euEccn: NLR Verlustleistung: 460 Kollektor-Emitter-Spannung, max.: 40 productTraceability: No SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3140 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV40201LT1G | ON Semiconductor | Trans GP BJT NPN 40V 2A 540mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40201LT1G | ON Semiconductor | Trans GP BJT NPN 40V 2A 540mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40300CTWG | onsemi | Description: PNP LFPAK4 BIP POWER TRAN | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40300MDR2G | onsemi | Description: TRANS 2PNP 40V 3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40300MDR2G | ON Semiconductor | Trans GP BJT PNP 40V 3A 783mW Automotive AEC-Q101 8-Pin SOIC N T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40300MDR2G | onsemi | Bipolar Transistors - BJT DUAL MATCHED 40V PNP LOW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40300MDR2G | onsemi | Description: TRANS 2PNP 40V 3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC | auf Bestellung 2478 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40300MZ4T1G | onsemi | Description: TRANS PNP 40V 3A SOT223 | auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40300MZ4T1G | onsemi | Bipolar Transistors - BJT 3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor AEC-Q101 Qualified | auf Bestellung 760 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40300MZ4T1G | onsemi | Description: TRANS PNP 40V 3A SOT223 | auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40301CTWG | onsemi | Description: NPN 40V LOW SAT LFPAK4 BP | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40301MDR2G | onsemi | Bipolar Transistors - BJT SOIC8 MATCHED LO VCE(SAT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40301MDR2G | ON Semiconductor | Description: TRANS 2NPN 40V 3A 8SOIC | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40301MZ4T1G | ON Semiconductor | Description: TRANS NPN 40V 3A SOT223 | auf Bestellung 12448 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV40301MZ4T1G | onsemi | Bipolar Transistors - BJT NPN 40V LOW SAT BP | auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40301MZ4T1G | ON Semiconductor | Description: TRANS NPN 40V 3A SOT223 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV40301MZ4T3G | onsemi | Description: NPN 40V LOW SAT SOT223 BP Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 1V Frequency - Transition: 215MHz Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 2 W Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40301MZ4T3G | onsemi | Bipolar Transistors - BJT 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor AEC-Q101 Qualified | auf Bestellung 3998 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40301MZ4T3G | onsemi | Description: NPN 40V LOW SAT SOT223 BP Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 1V Frequency - Transition: 215MHz Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 2 W Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40302PDR2G | onsemi | Description: TRANS NPN/PNP 40V 3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40302PDR2G | onsemi | Description: TRANS NPN/PNP 40V 3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC | auf Bestellung 1479 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40302PDR2G | onsemi | Bipolar Transistors - BJT COMP 40V NPN/PNP LO | auf Bestellung 33916 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40501UW3T2G | onsemi | Description: TRANS NPN 40V 5A 3WDFN | auf Bestellung 84865 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40501UW3T2G | onsemi | Description: TRANS NPN 40V 5A 3WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV40501UW3T2G | onsemi | Bipolar Transistors - BJT 40V NPN LOW VCE(SAT) XTR | auf Bestellung 2833 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40501UW3T2G | ON Semiconductor | Trans GP BJT NPN 40V 5A 1500mW Automotive 3-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45015WT1G | ON Semiconductor | LED Driver 19.4uA Supply Current Automotive 2-Pin SOD-123 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45015WT1G | ON Semiconductor | auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV45015WT1G | onsemi | LED Lighting Drivers SOD 123 15MA +/- 20% CCR | auf Bestellung 1881 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45015WT1G | ON Semiconductor | LED Driver 19.4uA Supply Current Automotive 2-Pin SOD-123 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45015WT1G | ON Semiconductor | LED Driver 19.4uA Supply Current Automotive 2-Pin SOD-123 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45015WT1G | Cypress Semiconductor Corp | Description: NSI450LDRIVECONSTACURREREGULATOM Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020AT1G | ON Semiconductor | Constant Current Regulator and LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020AT1G | onsemi | Description: IC CURRENT REGULATOR 10% SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 20mA Accuracy: ±10% Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45020AT1G | ON Semiconductor | Constant Current Regulator and LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020AT1G | ON Semiconductor | Constant Current Regulator and LED Driver | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV45020AT1G | ON Semiconductor | auf Bestellung 2050 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV45020AT1G | onsemi | LED Lighting Drivers SOD 123 20MA 10% CCR | auf Bestellung 10492 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45020AT1G | onsemi | Description: IC CURRENT REGULATOR 10% SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 20mA Accuracy: ±10% Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 11149 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45020JZT1G | onsemi | Description: IC CURRENT REGULATOR 15% SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 40mA Accuracy: ±15% Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOT-223 (TO-261) Part Status: Active | auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45020JZT1G | onsemi | LED Lighting Drivers LED Driver, Adjustable Constant Current Regulator, 45 V, 20 mA | auf Bestellung 933 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45020JZT1G | onsemi | Description: IC CURRENT REGULATOR 15% SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 40mA Accuracy: ±15% Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOT-223 (TO-261) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020JZT1G | ON Semiconductor | LED Driver 23000uA Supply Current Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020JZT1G | ON Semiconductor | LED Driver 23000uA Supply Current Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020T1G | ON Semiconductor | Constant Current Regulator and LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020T1G | onsemi | Description: IC CURRENT REGULATOR 15% SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 20mA Accuracy: ±15% Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Part Status: Active | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45020T1G | ON Semiconductor | auf Bestellung 2940 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV45020T1G | onsemi | Description: IC CURRENT REGULATOR 15% SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 20mA Accuracy: ±15% Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020T1G | ON Semiconductor | Constant Current Regulator and LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45020T1G | onsemi | LED Lighting Drivers SOD 123 20MA 15% CCR | auf Bestellung 794 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45025AT1G | ONSEMI | Description: ONSEMI - NSV45025AT1G - CURRENT REGULATORS tariffCode: 85423990 MSL: MSL 1 - unbegrenzt euEccn: NLR hazardous: false usEccn: EAR99 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AT1G | ON Semiconductor | Constant Current Regulator and LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AT1G | onsemi | Description: IC REG CCR 45V 25MA SOD123 | auf Bestellung 34013 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV45025AT1G | onsemi | LED Lighting Drivers SOD 123 25MA 10% CCR | auf Bestellung 2435 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45025AT1G | onsemi | Description: IC REG CCR 45V 25MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AZT1G | onsemi | LED Lighting Drivers LED Driver, Constant Current Regulator, 25 mA, 45 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45025AZT1G | ON Semiconductor | IC REG CCR 45V 25MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AZT1G | ON Semiconductor | IC REG CCR 45V 25MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AZT1G | onsemi | Description: IC REG CCR 45V 25MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AZT1G | ON Semiconductor | IC REG CCR 45V 25MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AZT1G | ON Semiconductor | IC REG CCR 45V 25MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AZT1G | ONSEMI | Description: ONSEMI - NSV45025AZT1G - LED-Treiber, AC/DC, 25mA, -55 bis 150°C, 1 Ausgang, 45V, AEC-Q101, SOD-223-4 Schaltfrequenz: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -55 Eingangsspannung, max.: 45 Bauform - Treiber: SOT-223 Bausteintopologie: Konstantstrom, linear Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Eingangsspannung, min.: - Anzahl der Pins: 4 Produktpalette: - Betriebstemperatur, max.: 150 Anzahl der Ausgänge: 1 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AZT1G | ON Semiconductor | IC REG CCR 45V 25MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025AZT1G | onsemi | Description: IC REG CCR 45V 25MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025T1G | onsemi | Description: IC REG CCR 45V 25MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025T1G | ONSEMI | Description: ONSEMI - NSV45025T1G - LED-Treiber, AC/DC, 25mA, -55 bis 150°C, 1 Ausgang, 45V, AEC-Q101, SOD-123-2 Schaltfrequenz: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -55 Eingangsspannung, max.: 45 Bauform - Treiber: SOD-123 Bausteintopologie: Konstantstrom, linear Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Eingangsspannung, min.: - Anzahl der Pins: 2 Produktpalette: - Betriebstemperatur, max.: 150 Anzahl der Ausgänge: 1 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025T1G | ON Semiconductor | LED Controller IC | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45025T1G | onsemi | LED Lighting Drivers SOD 123 25MA 15% CCR | auf Bestellung 2692 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45025T1G | onsemi | Description: NSV45025 - LED DRIVER, CONSTANT | auf Bestellung 35826 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV45030AT1G | ONSEMI | Description: ONSEMI - NSV45030AT1G - LED-Treiber, AC/DC, 30mA, -55 bis 150°C, 1 Ausgang, 45V, AEC-Q101, SOD-123-2 Schaltfrequenz: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -55 Eingangsspannung, max.: 45 Bauform - Treiber: SOD-123 Bausteintopologie: Konstantstrom, linear Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Eingangsspannung, min.: - Anzahl der Pins: 2 Produktpalette: - Betriebstemperatur, max.: 150 Anzahl der Ausgänge: 1 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030AT1G | ON Semiconductor | Constant Current Regulator And LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030AT1G | onsemi | LED Lighting Drivers SOD 123 30MA 10% CCR | auf Bestellung 4379 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45030AT1G | onsemi | Description: IC REG CCR 45V 30MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030AT1G | onsemi | Description: IC REG CCR 45V 30MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030AT1G | onsemi | Description: IC REG CCR 45V 30MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030AT1G | ON Semiconductor | Constant Current Regulator And LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030T1G | onsemi | Description: IC REG CCR LED DVR 30MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030T1G | ON Semiconductor | AC-DC LED Drivers | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030T1G | ONSEMI | Description: ONSEMI - NSV45030T1G - LED-Treiber, AC/DC, 30mA, -55 bis 150°C, 1 Ausgang, 45V, AEC-Q101, SOD-123-2 Schaltfrequenz: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -55 Eingangsspannung, max.: 45 Bauform - Treiber: SOD-123 Bausteintopologie: Konstantstrom, linear Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Eingangsspannung, min.: - Anzahl der Pins: 2 Produktpalette: - Betriebstemperatur, max.: 150 Anzahl der Ausgänge: 1 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030T1G | ON Semiconductor | AC-DC LED Drivers | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030T1G | onsemi | Description: NSV45030 - LED DRIVER, CONSTANT | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45030T1G | onsemi | LED Lighting Drivers SOD 123 30MA 15% CCR | auf Bestellung 2680 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45035JZT1G | ON Semiconductor | LED Driver 80 Segment Automotive 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV45035JZT1G | ONSEMI | Description: ONSEMI - NSV45035JZT1G - LED-Treiber, einstellbarer Konstantstrom, AEC-Q101, 1 Ausgang, 45Vin, 35mA bis 70mAout, SOT-223-4 tariffCode: 85423990 rohsCompliant: YES IC-Montage: Oberflächenmontage Ausgangsspannung, max.: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q100 IC-Gehäuse / Bauform: SOT-223 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Anzahl der Kanäle: 1Kanäle Betriebstemperatur, min.: -55°C Eingangsspannung, max.: 45V euEccn: NLR Ausgangsstrom, max.: 70mA Eingangsspannung, min.: - Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 999 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV45035JZT1G | ON Semiconductor | LED Driver 80 Segment Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45035JZT1G | onsemi | Description: IC REG CCR 45V 35MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45035JZT1G | onsemi | LED Lighting Drivers LED Dvr Adj Constant Crnt Reg 45V 35mA | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45035JZT1G | ON Semiconductor | LED Driver 80 Segment Automotive 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV45035JZT1G | ONSEMI | Description: ONSEMI - NSV45035JZT1G - LED-Treiber, einstellbarer Konstantstrom, AEC-Q101, 1 Ausgang, 45Vin, 35mA bis 70mAout, SOT-223-4 tariffCode: 85423990 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q100 IC-Gehäuse / Bauform: SOT-223 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -55°C Eingangsspannung, max.: 45V euEccn: NLR Ausgangsstrom, max.: 70mA Eingangsspannung, min.: - Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 999 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV45035JZT1G | ONSEMI | NSV45035JZT1G-ONS LED drivers | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45035JZT1G | onsemi | Description: IC REG CCR 45V 35MA SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45035JZT3G | onsemi | LED Lighting Drivers LED Driver, Adjustable Constant Current Regulator, 45 V, 35 mA | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45035JZT3G | ON Semiconductor | Adjustable Constant Current Regulator LED Driver 45 V, 35-70 mA 15%, 1.5 W | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45060JDT4G | ONSEMI | Description: ONSEMI - NSV45060JDT4G - LED-Treiber, 1 Ausgang, linear, einstellbarer Konstantstrom, 45V/60mA bis 100mA, 2.7W, TO-252-3 tariffCode: 85423990 rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q100 IC-Gehäuse / Bauform: TO-252 (DPAK) MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -55°C Eingangsspannung, max.: 45V euEccn: NLR Ausgangsstrom, max.: 100mA Eingangsspannung, min.: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: Lead (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV45060JDT4G | ONSEMI | Category: LED drivers Description: IC: driver; current regulator,LED driver; DPAK; 45V; 2.7W Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: DPAK Mounting: SMD Operating temperature: -55...175°C Operating voltage: 45V Power dissipation: 2.7W Operating current: 60...100mA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45060JDT4G | ONSEMI | Category: LED drivers Description: IC: driver; current regulator,LED driver; DPAK; 45V; 2.7W Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: DPAK Mounting: SMD Operating temperature: -55...175°C Operating voltage: 45V Power dissipation: 2.7W Operating current: 60...100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45060JDT4G | onsemi | Description: IC REG CCR 45V 60MA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45060JDT4G | ON Semiconductor | IC REG CCR 45V 60MA DPAK | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV45060JDT4G | ON Semiconductor | IC REG CCR 45V 60MA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45060JDT4G | ONSEMI | Description: ONSEMI - NSV45060JDT4G - LED-Treiber, 1 Ausgang, linear, einstellbarer Konstantstrom, 45V/60mA bis 100mA, 2.7W, TO-252-3 tariffCode: 85423990 rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q100 IC-Gehäuse / Bauform: TO-252 (DPAK) MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -55°C Eingangsspannung, max.: 45V euEccn: NLR Ausgangsstrom, max.: 100mA Eingangsspannung, min.: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: Lead (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV45060JDT4G | ON Semiconductor | IC REG CCR 45V 60MA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45060JDT4G | ON Semiconductor | auf Bestellung 195 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV45060JDT4G | onsemi | Description: IC REG CCR 45V 60MA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45060JDT4G | ON Semiconductor | IC REG CCR 45V 60MA DPAK | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV45060JDT4G | onsemi | LED Lighting Drivers DPAK 60MA | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV45060JDT4G | ON Semiconductor | IC REG CCR 45V 60MA DPAK | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV45060JDT4G | ON Semiconductor | IC REG CCR 45V 60MA DPAK | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV45090JDT4G | ON Semiconductor | LED DRVR Automotive 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV45090JDT4G | onsemi | LED Lighting Drivers LED Driver, Adjustable Constant Current Regulator, 45 V, 90 - 160 mA | auf Bestellung 42490 Stücke: Lieferzeit 122-126 Tag (e) |
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NSV45090JDT4G | onsemi | Description: IC REG CCR 45V 90MA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45090JDT4G | ON Semiconductor | LED DRVR Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45090JDT4G | ONSEMI | Description: ONSEMI - NSV45090JDT4G - LED-Treiber, 1 Ausgang, linear, einstellbarer Konstantstrom, 45V/90 mA bis 100mA, 2.7W, TO-252-3 tariffCode: 85423990 Schaltfrequenz: - rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: 160mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Ausgangsspannung: - Betriebstemperatur, min.: -55°C Eingangsspannung, max.: 45V euEccn: NLR Bauform - Treiber: TO-252 (DPAK) Bausteintopologie: Linear Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Eingangsspannung, min.: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Anzahl der Ausgänge: 1Ausgänge SVHC: Lead (14-Jun-2023) | auf Bestellung 1485 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV45090JDT4G | onsemi | Description: IC REG CCR 45V 90MA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV45090JDT4G | ON Semiconductor | LED DRVR Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50010YT1G | ON Semiconductor | IC REG CCR 50V 10MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50010YT1G | ONSEMI | Description: ONSEMI - NSV50010YT1G - LED-Treiber, AC/DC, 10mA, -55 bis 150°C, 1 Ausgang, 50V, AEC-Q101, SOD-123-2 Schaltfrequenz: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -55 Eingangsspannung, max.: 50 Bauform - Treiber: SOD-123 Bausteintopologie: Konstantstrom, linear Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Eingangsspannung, min.: - Anzahl der Pins: 2 Produktpalette: - Betriebstemperatur, max.: 150 Anzahl der Ausgänge: 1 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50010YT1G | onsemi | Description: IC CURRENT REGULATOR SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 10mA Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Part Status: Active | auf Bestellung 8524 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50010YT1G | ON Semiconductor | IC REG CCR 50V 10MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50010YT1G | ON Semiconductor | IC REG CCR 50V 10MA SOD123 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50010YT1G | ON Semiconductor | auf Bestellung 2530 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV50010YT1G | onsemi | LED Lighting Drivers SOD 123 10MA | auf Bestellung 4828 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50010YT1G | onsemi | Description: IC CURRENT REGULATOR SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 10mA Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50150ADT4G | onsemi | Description: IC CURRENT REGULATOR 10% DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 150mA ~ 350mA Accuracy: ±10% Operating Temperature: -55°C ~ 175°C Supplier Device Package: DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50150ADT4G | ON Semiconductor | LED Driver 80 Segment Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50150ADT4G | ON Semiconductor | auf Bestellung 2460 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV50150ADT4G | ON Semiconductor | LED Driver 80 Segment Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50150ADT4G | onsemi | LED Lighting Drivers DPAK 150MA | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50150ADT4G | ON Semiconductor | LED Driver 80 Segment Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50150ADT4G | onsemi | Description: IC CURRENT REGULATOR 10% DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 150mA ~ 350mA Accuracy: ±10% Operating Temperature: -55°C ~ 175°C Supplier Device Package: DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50150ADT4G | ON Semiconductor | LED Driver 80 Segment Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50150ADT4G | ON Semiconductor | LED Driver 80 Segment Automotive 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV50350ADT4G | ON Semiconductor | IC REG CCR 50V 350mA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50350ADT4G | onsemi | Description: IC CURRENT REGULATOR 10% DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 350mA Accuracy: ±10% Operating Temperature: -55°C ~ 175°C Supplier Device Package: DPAK Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50350ADT4G | ON Semiconductor | IC REG CCR 50V 350mA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50350ADT4G | ON Semiconductor | auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV50350ADT4G | onsemi | Description: IC CURRENT REGULATOR 10% DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 350mA Accuracy: ±10% Operating Temperature: -55°C ~ 175°C Supplier Device Package: DPAK Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 14945 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50350ADT4G | onsemi | LED Lighting Drivers DPAK 350MA | auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50350ADT4G | ON Semiconductor | IC REG CCR 50V 350MA DPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50350AST3G | onsemi | Description: IC CURRENT REGULATOR 10% SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 350mA Accuracy: ±10% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMC Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3571 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50350AST3G | ON Semiconductor | Constant Current Regulator and LED Driver Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50350AST3G Produktcode: 131283 | IC > IC LED-Treiber | Produkt ist nicht verfügbar | ||||||||||||||||||||
NSV50350AST3G | onsemi | Description: IC CURRENT REGULATOR 10% SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 350mA Accuracy: ±10% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMC Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50350AST3G | onsemi | LED Lighting Drivers SMC 350MA | auf Bestellung 6869 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV50350AST3G | ON Semiconductor | Constant Current Regulator and LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV50350AST3G | ONSEMI | Description: ONSEMI - NSV50350AST3G - LED-Treiber, AC/DC, 350mA, -55 bis 175°C, 1 Ausgang, 50V, AEC-Q101, DO-214AB-2 tariffCode: 85423990 rohsCompliant: Y-EX IC-Montage: Oberflächenmontage Ausgangsspannung, max.: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 IC-Gehäuse / Bauform: DO-214AB MSL: MSL 1 - unbegrenzt usEccn: EAR99 Schaltfrequenz, typ.: - Betriebstemperatur, min.: -55°C Eingangsspannung, max.: 50V euEccn: NLR Ausgangsstrom, max.: 385mA Eingangsspannung, min.: - Topologie: Konstantstrom, linear Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: No LED-Treiber: - Betriebstemperatur, max.: 175°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV60100DMTWTBG | ON Semiconductor | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV60100DMTWTBG | onsemi | Description: DUAL TRANSISTOR PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60100DMTWTBG | onsemi | Description: DUAL TRANSISTOR PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60101DMR6T1G | onsemi | Description: 60V, 1A DUAL NPN LOW VCE( Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 530mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SC-74 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60101DMR6T1G | ON Semiconductor | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV60101DMR6T1G | onsemi | Bipolar Transistors - BJT 60V, 1A DUAL NPN LOW VCE( | auf Bestellung 2675 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60101DMR6T1G | onsemi | Description: 60V, 1A DUAL NPN LOW VCE( Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 530mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SC-74 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60101DMR6T1G | ON Semiconductor | Trans GP BJT NPN 60V 1A 530mW Automotive 6-Pin SC-74 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60101DMR6T2G | onsemi | Description: 60V 1A DUAL NPN LOW VCE(SAT) IN Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SC-74 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60101DMR6T2G | onsemi | Bipolar Transistors - BJT 60V, 1A DUAL NPN LOW VCE(SAT) IN SC-74 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60101DMR6T2G | onsemi | Description: 60V 1A DUAL NPN LOW VCE(SAT) IN Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SC-74 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60101DMTWTBG | ON Semiconductor | Trans GP BJT NPN 60V 1A 2270mW Automotive 6-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60101DMTWTBG | ON Semiconductor | Trans GP BJT NPN 60V 1A 2270mW Automotive 6-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60101DMTWTBG | onsemi | Description: TRANS NPN DUAL 60V 1A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60101DMTWTBG | ON Semiconductor | Trans GP BJT NPN 60V 1A 2270mW Automotive 6-Pin WDFN EP T/R | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV60101DMTWTBG | onsemi | Description: TRANS NPN DUAL 60V 1A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60101DMTWTBG | onsemi | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60200DMTWTBG | onsemi | Description: TRANS PNP 60V 2A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60200DMTWTBG | onsemi | Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60200DMTWTBG | ON Semiconductor | PNP Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60200LT1G | onsemi | Bipolar Transistors - BJT 60V PNP LOW VCE(SAT) XTR | auf Bestellung 2968 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60200LT1G | ON Semiconductor | Trans GP BJT PNP 60V 2A 540mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60200LT1G | ON Semiconductor | Trans GP BJT PNP 60V 2A 540mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60200LT1G | onsemi | Description: TRANS PNP 60V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 460 mW | auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60200LT1G | ON Semiconductor | Trans GP BJT PNP 60V 2A 540mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 8988 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV60200LT1G | ON Semiconductor | Trans GP BJT PNP 60V 2A 540mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 8988 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV60200LT1G | onsemi | Description: TRANS PNP 60V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 460 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60200SMTWTBG | onsemi | Description: TRANS PNP 60V 2A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60200SMTWTBG | onsemi | Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60200SMTWTBG | onsemi | Description: TRANS PNP 60V 2A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60201LT1G | onsemi | Bipolar Transistors - BJT Low VCE(sat) Transistor, NPN, 60 V, 2.0 A, SOT-23 Package | auf Bestellung 7893 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60201LT1G | onsemi | Description: TRANS NPN 60V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 460 mW | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60201LT1G | onsemi | Description: TRANS NPN 60V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 460 mW | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60201SMTWTBG | onsemi | Description: TRANS NPN 60V 2A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60201SMTWTBG | onsemi | Description: TRANS NPN 60V 2A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60201SMTWTBG | onsemi | Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60600MZ4T1G | ON Semiconductor | Description: TRANS PNP 60V 6A SOT223-4 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60600MZ4T1G | onsemi | Bipolar Transistors - BJT PNP LOW VCE(SAT) | auf Bestellung 49200 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60600MZ4T1G | ON Semiconductor | Description: TRANS PNP 60V 6A SOT223-4 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60600MZ4T1G | onsemi | Description: TRANS PNP 60V 6A SOT223 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60600MZ4T1G | ON Semiconductor | Trans GP BJT PNP 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60600MZ4T3G | ON Semiconductor | auf Bestellung 3900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV60600MZ4T3G | onsemi | Bipolar Transistors - BJT PNP LOW VCE(SAT) | auf Bestellung 17 Stücke: Lieferzeit 646-650 Tag (e) |
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NSV60600MZ4T3G | ON Semiconductor | Description: TRANS PNP 60V 6A SOT223-4 | auf Bestellung 15980 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60600MZ4T3G | ON Semiconductor | Description: TRANS PNP 60V 6A SOT223-4 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60600MZ4T3G | ON Semiconductor | Trans GP BJT PNP 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T1G | ON Semiconductor | Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T1G | ON Semiconductor | Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T1G | ON Semiconductor | Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T1G | onsemi | Description: TRANS NPN 60V 6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW | auf Bestellung 751 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60601MZ4T1G | ONSEMI | Description: ONSEMI - NSV60601MZ4T1G - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 6 A, 2 W, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 6A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 60V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: Lead (14-Jun-2023) | auf Bestellung 2330 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV60601MZ4T1G | ON Semiconductor | Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T1G | ON Semiconductor | Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T1G | ON Semiconductor | auf Bestellung 1085 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV60601MZ4T1G | onsemi | Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT) | auf Bestellung 309381 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60601MZ4T1G | onsemi | Description: TRANS NPN 60V 6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T1G | ONSEMI | Description: ONSEMI - NSV60601MZ4T1G - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 6 A, 2 W, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 6A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 60V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: Lead (14-Jun-2023) | auf Bestellung 2330 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSV60601MZ4T3G | onsemi | Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT) | auf Bestellung 5191 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60601MZ4T3G | ON Semiconductor | Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T3G | onsemi | Description: TRANS NPN 60V 6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW | auf Bestellung 364000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV60601MZ4T3G | ON Semiconductor | Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T3G | ON Semiconductor | Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSV60601MZ4T3G | onsemi | Description: TRANS NPN 60V 6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW | auf Bestellung 364000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV9435T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 0.72W SOT223-4 | auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSV9435T1G | ON Semiconductor | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSV9435T1G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVA235(MPS-F-7217 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA278 | JRC | SMD | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NSVA278-903MHZ | auf Bestellung 1958 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA278903MHZ | auf Bestellung 680 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA279 | JRC | SMD | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NSVA279927MHZ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA391 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA531 | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA531. | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA531/886.0/931. | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA541 | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA541. | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA543(1765MHZ) | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVA543-1765MHZ | JRC | 3X3 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NSVB114YPDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB114YPDXV6T1G | ON Semiconductor | Description: TRANS BRT 50V 100MA SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB123JPDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SRF MT RST XSTR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB123JPDXV6T1G | ON Semiconductor | Description: TRANS PREBIAS NPN/PNP SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB124XPDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SOT563 COMPLEMENTARY | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB124XPDXV6T1G | ON Semiconductor | Description: TRANS PREBIAS NPN/PNP SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB143TPDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS RSTR XSTR TR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB143TPDXV6T1G | ON Semiconductor | Description: TRANS NPN/PNP PREBIAS SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB143ZPDXV6T1G | ON Semiconductor | Description: TRANS PREBIAS NPN/PNP 50V SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB143ZPDXV6T1G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB143ZPDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SOT-563 COMPLEMENTARY 4.7/47 K OH | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB144EPDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB144EPDXV6T1G | ON Semiconductor | Description: TRANS PREBIAS NPN/PNP SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVB1706DMW5T1G | onsemi | Digital Transistors Dual NPN Bipolar Digital Transistor (BRT) | auf Bestellung 6038 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVB1706DMW5T1G | onsemi | Description: TRANS 2NPN PREBIAS 0.25W SC88-A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVB1706DMW5T1G | onsemi | Description: TRANS 2NPN PREBIAS 0.25W SC88-A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) | auf Bestellung 47000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBA114EDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT563-6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBA114EDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT563-6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBA114EDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT563-6 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBA114EDXV6T1G | onsemi | Digital Transistors SS SOT563 RSTR XSTR | auf Bestellung 3779 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBA114EDXV6T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBA114YDXV6T1G | ON Semiconductor | Description: TRANS 2PNP PREBIAS 0.5W SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBA114YDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBA143ZDXV6T1G | onsemi | Description: TRANS 2PNP BIPO 60V SOT564 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 52000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBA143ZDXV6T1G | onsemi | Description: TRANS 2PNP BIPO 60V SOT564 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 52000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBA143ZDXV6T1G | onsemi | Bipolar Transistors - BJT SOT-563 DUAL 4.7/47 K OH | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS116LT3G | onsemi | Diodes - General Purpose, Power, Switching 75V SWITCH DIODE SS SOT23 | auf Bestellung 10000 Stücke: Lieferzeit 169-173 Tag (e) |
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NSVBAS116LT3G | onsemi | Description: DIODE GEN PURP 75V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 11690 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS116LT3G | onsemi | Description: DIODE GEN PURP 75V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS16TT1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SWITCHING DIODE 75 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS16TT1G | onsemi | Description: DIODE GP 100V 200MA SC75 SOT416 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS16TT1G | ON Semiconductor | DIODE GEN PURP 100V 200MA SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS16TT1G | onsemi | Small Signal Switching Diodes SWITCHING DIODE 75 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS16TT1G | onsemi | Description: DIODE GP 100V 200MA SC75 SOT416 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 129971 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS16W1T1G | ON Semiconductor | Ultra High Speed Switching Diodes | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS16W1T1G | onsemi | Diodes - General Purpose, Power, Switching SS SC88 SWITCHING DIODE | auf Bestellung 33123 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS16W1T1G | onsemi | Description: DIODE GEN PURP 100V 200MA SC88 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS16W1T1G | onsemi | Description: DIODE GEN PURP 100V 200MA SC88 | auf Bestellung 5865 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS16WT1G | auf Bestellung 444000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVBAS16WT3G | onsemi | Description: DIODE GP 100V 200MA SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS16WT3G | onsemi | Description: DIODE GP 100V 200MA SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS16WT3G | onsemi | Diodes - General Purpose, Power, Switching SS SC70 SWCH DIO 75V TR | auf Bestellung 10000 Stücke: Lieferzeit 447-451 Tag (e) |
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NSVBAS19LT1G | onsemi | Description: DIODE GP 120V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 70288 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS19LT1G | onsemi | Small Signal Switching Diodes Switching Diode, High Voltage 120 V | auf Bestellung 29997 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS19LT1G | ONSEMI | Description: ONSEMI - NSVBAS19LT1G - Kleinsignaldiode, Einfach, 120 V, 200 mA, 1.25 V, 50 ns, 2 A tariffCode: 85411000 Bauform - Diode: SOT-23 Durchlassstoßstrom: 2A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 120V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 649 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAS19LT1G | ON Semiconductor | auf Bestellung 2970 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBAS19LT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 120V 0.2A 50ns Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS19LT1G | onsemi | Description: DIODE GP 120V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V Qualification: AEC-Q101 | auf Bestellung 63000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS20LT3G | ONSEMI | Description: ONSEMI - NSVBAS20LT3G - 200 V SWITCHING DIODE SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS20LT3G | ON Semiconductor | auf Bestellung 9920 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBAS20LT3G | onsemi | Description: DIODE GP 200V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9595 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS20LT3G | onsemi | Description: DIODE GP 200V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS20LT3G | onsemi | Diodes - General Purpose, Power, Switching SS SWCH DIO 200V | auf Bestellung 1611 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21AHT1G | onsemi | Description: DIODE GEN PURP 250V 200MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 40 nA @ 200 V Qualification: AEC-Q101 | auf Bestellung 2226000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21AHT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 250V 0.2A 50ns Automotive 2-Pin SOD-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21AHT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 250V 0.2A 50ns Automotive 2-Pin SOD-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21AHT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 250V 0.2A 50ns Automotive 2-Pin SOD-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21AHT1G | onsemi | Diodes - General Purpose, Power, Switching SOD323 SWCH DIO 250V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21AHT1G | onsemi | Description: DIODE GEN PURP 250V 200MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 40 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2231236 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21AHT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 250V 0.2A 50ns Automotive 2-Pin SOD-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21AHT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 250V 0.2A 50ns Automotive 2-Pin SOD-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21HT1 | onsemi | Description: DIODE GEN PURP 250V 200MA SOD323 | auf Bestellung 65000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21HT1 | ONSEMI | Description: ONSEMI - NSVBAS21HT1 - DIODE GEN PURP 250V 200MA SOD323 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1997 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAS21HT1 | auf Bestellung 75000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVBAS21HT1G | onsemi | Diodes - General Purpose, Power, Switching SS SWCH DIO 250V | auf Bestellung 2203 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21HT1G | ONSEMI | Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21HT1G | onsemi | Description: DIODE GEN PURP 250V 200MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 35269 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21HT1G | ONSEMI | Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21HT1G | onsemi | Description: DIODE GEN PURP 250V 200MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21HT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 250V 0.2A 50ns Automotive 2-Pin SOD-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21HT3G | onsemi | Description: DIODE GEN PURP 250V 200MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21HT3G | ONSEMI | Description: ONSEMI - NSVBAS21HT3G - 250 V SWITCHING DIODE HIGH VOLTAGE SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21HT3G | ON Semiconductor | Rectifier Diode Small Signal Switching 250V 0.2A 50ns Automotive 2-Pin SOD-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21HT3G | onsemi | Description: DIODE GEN PURP 250V 200MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7743 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21HT3G | onsemi | Diodes - General Purpose, Power, Switching SS SWCH DIO 250V | auf Bestellung 6330 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21M3T5G | ON Semiconductor | Rectifier Diode Small Signal Switching 0.2A 50ns Automotive 3-Pin SOT-723 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAS21M3T5G | onsemi | Description: DIODE GEN PURP 250V 200MA SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21M3T5G | onsemi | Diodes - General Purpose, Power, Switching SS SWITCHING DIODE | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21M3T5G | onsemi | Description: DIODE GEN PURP 250V 200MA SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 | auf Bestellung 9427 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21SLT1G | onsemi | Description: DIODE GP 250V 225MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 225mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4375 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21SLT1G | onsemi | Diodes - General Purpose, Power, Switching SS SOT23 SWCH DIO 250V TR | auf Bestellung 7252 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21SLT1G | onsemi | Description: DIODE GP 250V 225MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 225mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21TMR6T1G | onsemi | Description: DIODE ARRAY GP 250V 200MA SC74 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-74 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V | auf Bestellung 48409 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21TMR6T1G | ON Semiconductor | Rectifier Diode Small Signal Switching 0.2A 50ns Automotive 6-Pin SC-74 T/R | auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAS21TMR6T1G | ONSEMI | Description: ONSEMI - NSVBAS21TMR6T1G - Kleinsignaldiode, Dreifach, isoliert, 250 V, 200 mA, 1.25 V, 50 ns, 625 mA tariffCode: 85411000 Bauform - Diode: SC-74 Durchlassstoßstrom: 625mA rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Dreifach, isoliert Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 250V Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 25460 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAS21TMR6T1G | onsemi | Description: DIODE ARRAY GP 250V 200MA SC74 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-74 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V | auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21TMR6T1G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 6-Pin SC-74 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21TMR6T1G | onsemi | Diodes - General Purpose, Power, Switching TRIPLE HIGH VTG SWITCH | auf Bestellung 221686 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21TMR6T1G | ON Semiconductor | Rectifier Diode Small Signal Switching 0.2A 50ns Automotive 6-Pin SC-74 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21TMR6T1G | ONSEMI | Description: ONSEMI - NSVBAS21TMR6T1G - Kleinsignaldiode, Dreifach, isoliert, 250 V, 200 mA, 1.25 V, 50 ns, 625 mA tariffCode: 85411000 Bauform - Diode: SC-74 Durchlassstoßstrom: 625mA rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Dreifach, isoliert Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 250V Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 25460 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAS21TMR6T2G | ON Semiconductor | Diode Small Signal Switching 0.2A Automotive AEC-Q101 6-Pin SC-74 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21TMR6T2G | ON Semiconductor | Diodes - General Purpose, Power, Switching TRIPLE HIGH VOLTAGE | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21TMR6T2G | onsemi | Description: DIODE SWITCHING 250V SC-74 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-74 Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21TMR6T2G | onsemi | Description: DIODE SWITCHING 250V SC-74 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-74 Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21XV2T5G | onsemi | Description: DIODE GEN PURP 250V 200MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21XV2T5G | onsemi | Description: DIODE GEN PURP 250V 200MA SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V | auf Bestellung 15275 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS21XV2T5G | ON Semiconductor | 250V SW DIODE IN SOD523 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAS21XV2T5G | onsemi | Diodes - General Purpose, Power, Switching 250V SW DIODE IN SOD523 | auf Bestellung 17415 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS70LT1 | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVBAS70LT1 | ONSEMI | Description: ONSEMI - NSVBAS70LT1 - NSVBAS70LT1, STAND RECOVERY RECTIFIERS tariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAS70LT1 | onsemi | Description: RECTIFIER DIODE, SCHOTTKY, 0.07A | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS70LT1G | ON Semiconductor | Description: DIODE SCHOTTKY 70V 70MA SOT23-3 | auf Bestellung 6659 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVBAS70LT1G | onsemi | Schottky Diodes & Rectifiers SS SCHTKY DIODE | auf Bestellung 6303 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAS70LT1G | ON Semiconductor | auf Bestellung 54970 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBAS70LT1G | ON Semiconductor | Description: DIODE SCHOTTKY 70V 70MA SOT23-3 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVBASH16MX2WT5G | onsemi | Diodes - General Purpose, Power, Switching High Voltage Switching Diode Series, +175C 100V, Switching Diode, Automotive | auf Bestellung 9024 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH19LT1G | onsemi | Description: DIODE GP 120V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V Qualification: AEC-Q101 | auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH19LT1G | onsemi | Diodes - General Purpose, Power, Switching SS SWCH DIO 250V | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBASH19LT1G | onsemi | Description: DIODE GP 120V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V Qualification: AEC-Q101 | auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH20LT1G | onsemi | Diodes - General Purpose, Power, Switching SS SWCH DIO 250V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH20MX2WT5G | onsemi | Description: 100V & 200V SW DIODE IN X2DFNW2 Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X2DFNW (1x0.6) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Qualification: AEC-Q101 | auf Bestellung 104000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH20MX2WT5G | onsemi | Diodes - General Purpose, Power, Switching High Voltage Switching Diode Series, +175C 200V, Switching Diode, Automotive | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH20MX2WT5G | onsemi | Description: 100V & 200V SW DIODE IN X2DFNW2 Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X2DFNW (1x0.6) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Qualification: AEC-Q101 | auf Bestellung 111990 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH21LT1G | ON Semiconductor | Switching Diode, High Voltage, High Temperature | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBASH21LT1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SS SOT23 SWCH DIO 250V TR-175DEGC | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBASH21LT1G | ON Semiconductor | Description: HIGH VOLT DIODE | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBASH21MX2WT5G | onsemi | Diodes - General Purpose, Power, Switching High Voltage Switching Diode Series, +175C 250V, Switching Diode, Automotive | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54HT1 | ON | SOD323 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NSVBAT54HT1G | ON Semiconductor | Rectifier Diode Schottky 0.2A 5ns Automotive 2-Pin SOD-323 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAT54HT1G | onsemi | Description: DIODE SCHOTTKY 30V 200MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54HT1G | ONSEMI | Description: ONSEMI - NSVBAT54HT1G - Kleinsignal-Schottky-Diode, Einfach, 30 V, 200 mA, 800 mV, 600 mA, 150 °C tariffCode: 85411000 Bauform - Diode: SOD-323 Durchlassstoßstrom: 600mA rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 800mV Sperrverzögerungszeit: 5ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 16060 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAT54HT1G | onsemi | Schottky Diodes & Rectifiers SS SCHOTTKY DIODE | auf Bestellung 103744 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54HT1G | onsemi | Description: DIODE SCHOTTKY 30V 200MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 | auf Bestellung 60262 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54HT1G | ONSEMI | Description: ONSEMI - NSVBAT54HT1G - Kleinsignal-Schottky-Diode, Einfach, 30 V, 200 mA, 800 mV, 600 mA, 150 °C tariffCode: 85411000 Bauform - Diode: SOD-323 Durchlassstoßstrom: 600mA rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 800mV Sperrverzögerungszeit: 5ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 16060 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAT54HT1G | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVBAT54LT1G | onsemi | Schottky Diodes & Rectifiers SS SHKY DIO 30V TR | auf Bestellung 22263 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54LT1G | onsemi | Description: DIODE SCHOTTKY 30V 200MA SOT23-3 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54LT1G | ON Semiconductor | auf Bestellung 2950 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBAT54LT1G | onsemi | Description: DIODE SCHOTTKY 30V 200MA SOT23-3 | auf Bestellung 26154 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54M3T5G | ON Semiconductor | Description: DIODE SCHOTTKY 30V 200MA SOT723 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVBAT54M3T5G | ON Semiconductor | Rectifier Diode Schottky Si 0.2A 5ns Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAT54M3T5G | onsemi | Schottky Diodes & Rectifiers SS SWITCHING DIODE | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54SWT1G | ON Semiconductor | auf Bestellung 625 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBAT54SWT1G | onsemi | Description: DIODE ARR SCHOT 30V 200MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54SWT1G | ON Semiconductor | Diode Schottky 0.2A Automotive 3-Pin SC-70 T/R | auf Bestellung 28703 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBAT54SWT1G | ON Semiconductor | Rectifier Diode Schottky 0.2A 5ns Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAT54SWT1G | ON Semiconductor | Diode Schottky 0.2A Automotive 3-Pin SC-70 T/R | auf Bestellung 23880 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBAT54SWT1G | onsemi | Schottky Diodes & Rectifiers SS SHKY DIO 30V TR | auf Bestellung 15415 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54SWT1G | ON Semiconductor | Diode Schottky 0.2A Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAT54SWT1G | ON Semiconductor | Diode Schottky 0.2A Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAT54SWT1G | onsemi | Description: DIODE ARR SCHOT 30V 200MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V | auf Bestellung 37710 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54SWT1G | ON Semiconductor | Diode Schottky 0.2A Automotive 3-Pin SC-70 T/R | auf Bestellung 28703 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBAT54SWT1G | ON Semiconductor | Diode Schottky 0.2A Automotive 3-Pin SC-70 T/R | auf Bestellung 23880 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBAT54WT1G | onsemi | Schottky Diodes & Rectifiers SS SHKY DIO 30V TR | auf Bestellung 10605 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54WT1G | onsemi | Description: DIODE SCHOTTKY 30V 200MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAT54WT1G | ON Semiconductor | Rectifier Diode Schottky 0.2A 5ns Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAT54WT1G | onsemi | Description: DIODE SCHOTTKY 30V 200MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 | auf Bestellung 5622 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV23CLT1G | onsemi | Description: DIODE ARRAY GP 250V 400MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 400mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V | auf Bestellung 5797 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV23CLT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 250V 0.4A 150ns Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAV23CLT1G | onsemi | Description: DIODE ARRAY GP 250V 400MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 400mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V | auf Bestellung 5797 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV23CLT1G | onsemi | Diodes - General Purpose, Power, Switching DUAL CPR CMDTY PBF | auf Bestellung 81088 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV70DXV6T5G | onsemi | Diodes - General Purpose, Power, Switching SS SOT563 SWITCH DIO | auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV70DXV6T5G | onsemi | Description: NSVBAV70D - SWITCHING DIODE, QUA | auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVBAV70TT1 | onsemi | Description: DIODE ARRAY GP 100V 100MA SC75 Packaging: Bulk Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6967 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV70TT1 | auf Bestellung 219000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVBAV70TT1 | ONSEMI | Description: ONSEMI - NSVBAV70TT1 - BAV70T - DIODE ARRAY SW 100V 100MA SC75 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 6967 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAV70TT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 0.2A 6ns Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAV70TT1G | onsemi | Description: DIODE ARRAY GP 100V 100MA SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 11995 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV70TT1G | onsemi | Description: DIODE ARRAY GP 100V 100MA SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV70TT1G | onsemi | Small Signal Switching Diodes SS SC75 DUAL DIO 70V | auf Bestellung 80140 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV70TT3G | onsemi | Description: DIODE ARRAY GP 100V 100MA SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV70TT3G | onsemi | Small Signal Switching Diodes DUAL SWITCHING DIODE | auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV70TT3G | ON Semiconductor | Rectifier Diode Small Signal Switching 0.2A 6ns Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAV70TT3G | onsemi | Description: DIODE ARRAY GP 100V 100MA SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 29862 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV99WT3G | onsemi | Small Signal Switching Diodes SS SC70 DUAL DIODE T | auf Bestellung 11455 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAV99WT3G | ONSEMI | Description: ONSEMI - NSVBAV99WT3G - Kleinsignaldiode, Zweifach in Reihe, 100 V, 215 mA, 1.25 V, 6 ns, 500 mA tariffCode: 85411000 Bauform - Diode: SC-70 Durchlassstoßstrom: 0 rohsCompliant: YES Diodenmontage: 0 hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach in Reihe Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 6ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 215mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 0 Anzahl der Pins: 3Pin(s) Produktpalette: BAV99W productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 0 SVHC: No SVHC (15-Jan-2018) | auf Bestellung 12603 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAV99WT3G | ON Semiconductor | Rectifier Diode Small Signal Switching 100V 0.215A 6ns Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAV99WT3G | onsemi | Description: DIODE ARRAY GP 100V 215MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBAV99WT3G | ONSEMI | Description: ONSEMI - NSVBAV99WT3G - Kleinsignaldiode, Zweifach in Reihe, 100 V, 215 mA, 1.25 V, 6 ns, 500 mA tariffCode: 85411000 Bauform - Diode: SC-70 Durchlassstoßstrom: 0 rohsCompliant: YES Diodenmontage: 0 hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach in Reihe Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 6ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 215mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 0 Anzahl der Pins: 3Pin(s) Produktpalette: BAV99W productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 0 SVHC: No SVHC (15-Jan-2018) | auf Bestellung 12603 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBAV99WT3G | onsemi | Description: DIODE ARRAY GP 100V 215MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 16183 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAWH56WT1G | onsemi | Description: DIODE GEN PURP 70V 200MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAWH56WT1G | onsemi | Diodes - General Purpose, Power, Switching SS SC70 SWCH DIO 70V TR-175DEGC | auf Bestellung 8137 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBAWH56WT1G | onsemi | Description: DIODE GEN PURP 70V 200MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114EDXV6T1G | onsemi | Description: TRANS 2NPN BIAS BIPOLAR SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114EDXV6T1G | onsemi | Digital Transistors SS SOT563 RSTR XSTR | auf Bestellung 1989 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114EDXV6T1G | onsemi | Description: TRANS 2NPN BIAS BIPOLAR SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114EDXV6T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC114EPDXV6T1G | ON Semiconductor | Dual Bias Resistor Digital Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC114EPDXV6T1G | ON Semiconductor | Description: TRANS NPN/PNP BIAS SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC114EPDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SOT563 DUAL RSTR XSTR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC114YDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114YDXV6T1G | onsemi | Digital Transistors SS RSTR XSTR TR | auf Bestellung 3694 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114YDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114YPDXV65G | auf Bestellung 104000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVBC114YPDXV65G | ON Semiconductor | Description: TRANS PREBIAS NPN/PNP SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC114YPDXV65G | ONSEMI | Description: ONSEMI - NSVBC114YPDXV65G - TRANS PREBIAS NPN-PNP SOT563 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC114YPDXV6T1G | onsemi | Digital Transistors Complementary Bipolar Digital Transistor (BRT) | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114YPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC114YPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7860 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC115EPDXV6T1G | onsemi | Digital Transistors SS SOT563 RSTR XSTR TR | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC123JDXV6T5G | onsemi | Description: SS SOT563 SRF MT RST XSTR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC123JPDXV6T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SOT563 SRF MT RST XSTR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC123JPDXV6T1G | onsemi | Bipolar Transistors - Pre-Biased Complementary Bipolar Digital Transistor (BRT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC123JPDXV6T1G | ON Semiconductor | Complementary Bipolar Digital Transistor (BRT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124EDXV6T1G | onsemi | Digital Transistors Dual NPN Bipolar Digital Transistor (BRT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124EDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC124EDXV6T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124EDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124EPDXV6T1G | onsemi | Description: SS SOT563 DUAL RSTR XSTR Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC124EPDXV6T1G | onsemi | Description: SS SOT563 DUAL RSTR XSTR Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC124EPDXV6T1G | onsemi | Digital Transistors SS SOT563 DUAL RSTR XSTR | auf Bestellung 4000 Stücke: Lieferzeit 108-112 Tag (e) |
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NSVBC124XDXV6T1G | onsemi | Description: TRANS BRT 2NPN BIPO SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124XDXV6T1G | onsemi | Bipolar Transistors - BJT SS SOT563 DUALL 22/ 47 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124XDXV6T1G | onsemi | Description: TRANS BRT 2NPN BIPO SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124XPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 52000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC124XPDXV6T1G | ON Semiconductor | Complementary Bipolar Digital Transistor (BRT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124XPDXV6T1G | onsemi | Digital Transistors Complemetary Bipolar Digital Transistor (BRT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC124XPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 52000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC143TPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143TPDXV6T1G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143TPDXV6T1G | onsemi | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZDXV6T1G | onsemi | Description: TRANS BRT 2NPN BIPO SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZDXV6T1G | ON Semiconductor | Dual NPN Bias Resistor Transistors Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZDXV6T1G | onsemi | Bipolar Transistors - BJT SOT-563 DUAL 4.7/47 K OH | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZDXV6T1G | onsemi | Description: TRANS BRT 2NPN BIPO SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC143ZPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 288000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC143ZPDXV6T1G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZPDXV6T1G | onsemi | Digital Transistors Complementary Bipolar Digital Transistor (BRT) | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC143ZPDXV6T5G | ON Semiconductor | Description: TRANS PREBIAS NPN/PNP 50V SOT563 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZPDXV6T5G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC143ZPDXV6T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased SOT-563 COMPLEMENTARY 4.7/47 K OH | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC144EDXV6T1G | ON Semiconductor | NPN Transistors with Monolithic Bias Resistor Network Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC144EDXV6T1G | onsemi | Digital Transistors Dual NPN Bipolar Digital Transistor (BRT) AECQ101 Dual SOT-563 NPN BRT 47kR / 47kR | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC144EPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC144EPDXV6T1G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive AEC-Q101 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC144EPDXV6T1G | onsemi | Digital Transistors Complementary Bipolar Digital Transistor (BRT) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC144EPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC817-16LT1G | onsemi | Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC817-16LT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC817-16LT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC817-16LT1G | ONSEMI | Description: ONSEMI - NSVBC817-16LT1G - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 500 mA, 300 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 8900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC817-16LT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 300mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC817-16LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V | auf Bestellung 11682 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC817-16LT1G | onsemi | Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 13850 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC817-16LT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC817-16LT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC817-16LT1G | ONSEMI | Description: ONSEMI - NSVBC817-16LT1G - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 500 mA, 300 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 8900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC817-40WT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC817-40WT1G | onsemi | Description: TRANS NPN 45V 0.5A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 460 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC817-40WT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC817-40WT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R | auf Bestellung 22600 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC817-40WT1G | ON Semiconductor | auf Bestellung 8584 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBC817-40WT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC817-40WT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R | auf Bestellung 22600 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC817-40WT1G | onsemi | Description: TRANS NPN 45V 0.5A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 460 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 39796 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC817-40WT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R | auf Bestellung 17989 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC817-40WT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC817-40WT1G | onsemi | Digital Transistors 45 V, 0.5 A, General Purpose NPN Transistor | auf Bestellung 23159 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC818-40LT1G | onsemi | Description: TRANS NPN 25V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 225 mW | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC818-40LT1G | ON Semiconductor | Trans GP BJT NPN 25V 0.5A 300mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC818-40LT1G | onsemi | Bipolar Transistors - BJT NPN Bipolar Transistor | auf Bestellung 6000 Stücke: Lieferzeit 52-56 Tag (e) |
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NSVBC818-40LT1G | onsemi | Description: TRANS NPN 25V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 225 mW | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC846BM3T5G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 640mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC846BM3T5G | onsemi | Bipolar Transistors - BJT NPN Bipolar Transistor | auf Bestellung 22314 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC846BM3T5G | onsemi | Description: TRANS NPN 65V 0.1A SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 265 mW | auf Bestellung 16245 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC846BM3T5G | ONSEMI | Description: ONSEMI - NSVBC846BM3T5G - Bipolarer Einzeltransistor (BJT), NPN, 65 V, 100 mA, 265 mW, SOT-723, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES DC-Stromverstärkung hFE: 200hFE Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 265mW Bauform - Transistor: SOT-723 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 65V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 7750 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC846BM3T5G | onsemi | Description: TRANS NPN 65V 0.1A SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 265 mW | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BDW1T2G | ON Semiconductor | auf Bestellung 2970 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBC847BDW1T2G | onsemi | Description: TRANS 2NPN 45V 0.1A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 4033 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BDW1T2G | onsemi | Bipolar Transistors - BJT Dual NPN Bipolar Transistor | auf Bestellung 13773 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BDW1T2G | onsemi | Description: TRANS 2NPN 45V 0.1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 38750 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC847BLT3G | ONSEMI | Description: ONSEMI - NSVBC847BLT3G - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 7888 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC847BLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6489 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC847BLT3G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V | auf Bestellung 29196 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC847BLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6489 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC847BLT3G | onsemi | Description: TRANS NPN 45V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 18321 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC847BLT3G | ONSEMI | Description: ONSEMI - NSVBC847BLT3G - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 8188 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC847BLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 5019 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC847BLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 5019 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC847BLT3G | onsemi | Description: TRANS NPN 45V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BTT1G | onsemi | Description: TRANS NPN 45V 0.1A SC75 SOT416 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BTT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC847BTT1G | onsemi | Description: TRANS NPN 45V 0.1A SC75 SOT416 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW | auf Bestellung 9465 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC847BTT1G | onsemi | Bipolar Transistors - BJT SS SC75 GP XSTR NPN | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC848BWT1G | onsemi | Description: TRANS NPN 30V 0.1A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC848BWT1G | onsemi | Bipolar Transistors - BJT SS SC70 GP XSTR NPN 30V | auf Bestellung 8162 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC848BWT1G | onsemi | Description: TRANS NPN 30V 0.1A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW | auf Bestellung 8740 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC848CDW1T1G | onsemi | Bipolar Transistors - BJT Dual NPN Bipolar Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC848CDW1T1G | onsemi | Description: TRANS 2NPN 30V 0.1A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC848CLT1G | onsemi | Description: TRANS NPN 30V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW | auf Bestellung 114000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC848CLT1G | ONSEMI | Description: ONSEMI - NSVBC848CLT1G - Bipolarer Einzeltransistor (BJT), NPN, 30 V, 100 mA, 300 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 420hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: BC846 Kollektor-Emitter-Spannung, max.: 30V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4232 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC848CLT1G | onsemi | Bipolar Transistors - BJT 100 mA, 30 V, NPN Bipolar Junction Transistor | auf Bestellung 23005 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC848CLT1G | onsemi | Description: TRANS NPN 30V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW | auf Bestellung 115185 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC848CLT1G | ONSEMI | Description: ONSEMI - NSVBC848CLT1G - Bipolarer Einzeltransistor (BJT), NPN, 30 V, 100 mA, 300 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 420hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: BC846 Kollektor-Emitter-Spannung, max.: 30V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4232 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC849BLT1G | onsemi | Description: TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC850BLT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN | auf Bestellung 8426 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC850BLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC850BLT1G | onsemi | Description: TRANS NPN 45V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 185900 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC850BLT1G | onsemi | Description: TRANS NPN 45V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 183000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC850CLT1G | onsemi | Description: TRANS NPN 45V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC850CLT1G | onsemi | Description: TRANS NPN 45V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 29445 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC850CLT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN | auf Bestellung 2936 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC856BM3T5G | ONSEMI | Description: ONSEMI - NSVBC856BM3T5G - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 640 mW, SOT-723, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 220hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 640mW Bauform - Transistor: SOT-723 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 65V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC856BM3T5G | onsemi | Description: TRANS PNP 65V 0.1A SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 265 mW | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC856BM3T5G | onsemi | Bipolar Transistors - BJT PNP Bipolar Transistor | auf Bestellung 16031 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC856BM3T5G | ONSEMI | Description: ONSEMI - NSVBC856BM3T5G - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 640 mW, SOT-723, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 220hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 640mW Bauform - Transistor: SOT-723 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 65V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC856BM3T5G | onsemi | Description: TRANS PNP 65V 0.1A SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 265 mW | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC856BM3T5G | ON Semiconductor | Trans GP BJT PNP 65V 0.1A 640mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC857BLT3G | onsemi | Digital Transistors SS SOT23 GP XSTR PNP 45V | auf Bestellung 10609 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857BLT3G | onsemi | Description: TRANS PNP 45V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 157135 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857BLT3G | onsemi | Description: TRANS PNP 45V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 150000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857BTT1G | onsemi | Description: TRANS PNP 45V 0.1A SC75 SOT416 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857BTT1G | ON Semiconductor | Trans GP BJT PNP 45V 0.1A 300mW Automotive 3-Pin SOT-416 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC857BTT1G | onsemi | Bipolar Transistors - BJT SS SC75 GP XSTR PNP | auf Bestellung 14186 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857BTT1G | onsemi | Description: TRANS PNP 45V 0.1A SC75 SOT416 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857CWT1G | ON Semiconductor | Trans GP BJT PNP 45V 0.1A 150mW Automotive 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC857CWT1G | onsemi | Bipolar Transistors - BJT SS SC70 GP XSTR PNP 45V | auf Bestellung 14620 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857CWT1G | ONSEMI | Description: ONSEMI - NSVBC857CWT1G - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 100 mA, 150 mW, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 420hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: BC857 Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1568 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC857CWT1G | onsemi | Description: TRANS PNP 45V 0.1A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW | auf Bestellung 81417 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857CWT1G | ONSEMI | Description: ONSEMI - NSVBC857CWT1G - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 100 mA, 150 mW, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 420hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: BC857 Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1568 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBC857CWT1G | onsemi | Description: TRANS PNP 45V 0.1A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW | auf Bestellung 81000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC857CWT1G-M01 | onsemi | Description: NSVBC857CWT1G-M01 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC857CWT1G-M02 | onsemi | Description: NSVBC857CWT1G-M02 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC858AWT1G | onsemi | Description: NSVBC858A - PNP BIPOLAR TRANSIST Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW Qualification: AEC-Q101 | auf Bestellung 156000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC858AWT1G | ON Semiconductor | Bipolar Transistors - BJT SS SC70 GP XSTR PNP 30V Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC858AWT1G | onsemi | Bipolar Transistors - BJT SS SC70 GP XSTR PNP 30V | auf Bestellung 11364 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC858BLT1G | onsemi | Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW | auf Bestellung 47894 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC858BLT1G | onsemi | Bipolar Transistors - BJT SS GP XSTR PNP 30V | auf Bestellung 13044 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC858BLT1G | ON Semiconductor | auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBC858BLT1G | onsemi | Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC858CLT1G | onsemi | Bipolar Transistors - BJT PNP Bipolar Transistor | auf Bestellung 13186 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC858CLT1G | ON Semiconductor | Trans GP BJT PNP 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBC858CLT1G | onsemi | Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW | auf Bestellung 5498 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBC858CLT1G | onsemi | Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCH807-25LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCH807-25LT1G | onsemi | Bipolar Transistors - BJT +175C TJ(MAX) PNP Bipolar Transistor AEC-Q101.revD Qualified, +175C TJ(MAX) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCH807-25LT1G | ON Semiconductor | PNP Bipolar Transistor AEC Q101.revD Qualified | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCH807-40LT1G | onsemi | Bipolar Transistors - BJT +175C TJ(MAX) PNP Bipolar Transistor AEC-Q101.revD Qualified, +175C TJ(MAX) | auf Bestellung 5816 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCH807-40LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCH807-40LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCH817-40LT1G | onsemi | Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 56500 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCH817-40LT1G | onsemi | Bipolar Transistors - BJT +175C TJ(MAX) NPN Bipolar Transistor AEC-Q101.revD Qualified, +175C TJ(MAX) | auf Bestellung 4860 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCH817-40LT1G | onsemi | Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP53-16T3G | onsemi | Description: TRANS PNP 80V 1.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP53-16T3G | ON Semiconductor | auf Bestellung 2740 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBCP53-16T3G | onsemi | Bipolar Transistors - BJT SS SOT223 GP XSTR PNP 80V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP53-16T3G | ON Semiconductor | Trans GP BJT PNP 80V 1.5A 1500mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCP53-16T3G | onsemi | Description: TRANS PNP 80V 1.5A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W | auf Bestellung 7730 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP56-10T3G | ON Semiconductor | Trans GP BJT NPN 80V 1A 1500mW Automotive 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBCP56-10T3G | onsemi | Description: TRANS NPN 80V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP56-10T3G | onsemi | Description: TRANS NPN 80V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W | auf Bestellung 8315 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP56-10T3G | onsemi | Bipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V | auf Bestellung 6246 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP68T1G | onsemi | Description: TRANS NPN 20V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1377 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP68T1G | onsemi | Description: TRANS NPN 20V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCP68T1G | onsemi | Bipolar Transistors - BJT NPN Bipolar Transistor | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP68T1G | ON Semiconductor | Trans GP BJT NPN 20V 1A 1500mW Automotive 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBCP69T1G | onsemi | Bipolar Transistors - BJT PNP Bipolar Junction Transistor | auf Bestellung 5504 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP69T1G | ON Semiconductor | Trans GP BJT PNP 20V 1A 1500mW Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCP69T1G | onsemi | Description: TRANS PNP 20V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W | auf Bestellung 30483 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP69T1G | onsemi | Description: TRANS PNP 20V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W | auf Bestellung 29000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP69T1G | ON Semiconductor | auf Bestellung 12800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVBCW32LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 32V | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCW32LT1G | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCW68GLT1G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCW68GLT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR PNP | auf Bestellung 1789 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCW68GLT1G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCW68GLT1G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBCW68GLT1G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCX17LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCX17LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 30341 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCX17LT1G | onsemi | Digital Transistors SS SOT23 GP XSTR PNP 45V | auf Bestellung 5994 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBSP19AT1G | onsemi | Description: TRANS NPN 350V 0.1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 70MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVBSS63LT1G | onsemi | Description: TRANS PNP 100V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBSS63LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 DR XSTR PNP 100V | auf Bestellung 6837 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBSS63LT1G | onsemi | Description: TRANS PNP 100V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW | auf Bestellung 35308 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBT2222ADW1T1G | ON Semiconductor | Trans GP BJT NPN 40V 0.6A 150mW Automotive 6-Pin SC-88 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVBT2222ADW1T1G | onsemi | Bipolar Transistors - BJT NPN Bipolar Transistor | auf Bestellung 4502 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBT2222ADW1T1G | onsemi | Description: TRANS 2NPN 40V 0.6A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBT2222ADW1T1G | onsemi | Description: TRANS 2NPN 40V 0.6A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 6248 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVC2020JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 20mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7220 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVC2020JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 20mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVC2020JBT3G | ON Semiconductor | Constant Current Regulator and LED Driver | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVC2020JBT3G | onsemi | LED Lighting Drivers SMB 20 MA 15% CCR | auf Bestellung 3557 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVC2030JBT3G | ON Semiconductor | IC REG CCR 20V 30MA SMB | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVC2030JBT3G | ON Semiconductor | LED Lighting Drivers SMB 30 MA 15% CCR | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVC2030JBT3G | ON Semiconductor | Description: IC REG CCR 20V 30MA SMB | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVC2030JBT3G | ONSEMI | Description: ONSEMI - NSVC2030JBT3G - LED-Treiber, AC/DC, 30mA, -55 bis 175°C, 1 Ausgang, 120V, AEC-Q101, DO-214AA (SMB)-2 Schaltfrequenz: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -55 Eingangsspannung, max.: 120 Bauform - Treiber: DO-214AA (SMB) Bausteintopologie: Konstantstrom, linear Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Eingangsspannung, min.: - Anzahl der Pins: 2 Produktpalette: - Betriebstemperatur, max.: 175 Anzahl der Ausgänge: 1 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVC2030JBT3G | onsemi | LED Lighting Drivers SMB 30 MA 15% CCR | auf Bestellung 50424 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVC2050JBT3G | ON Semiconductor | IC REG CCR 20V 50MA SMB | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVC2050JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 50mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 44990 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVC2050JBT3G | onsemi | LED Lighting Drivers SMB 50 MA 15% CCR | auf Bestellung 4975 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVC2050JBT3G | ON Semiconductor | IC REG CCR 20V 50MA SMB | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVC2050JBT3G | ON Semiconductor | IC REG CCR 20V 50MA SMB | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVC2050JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 50mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 44990 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVD2004ML2T1 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVD2004ML2T1/ | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NSVD350HT1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SS SOD323 SWCH DIO 3 | auf Bestellung 2327 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVD350HT1G | ON Semiconductor | Rectifier Diode Small Signal Switching 0.2A 55ns Automotive 2-Pin SOD-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVD350HT1G | ON Semiconductor | Description: DIODE SWITCHING 350V SOD323 | auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVD4001DR2G | ONSEMI | Description: ONSEMI - NSVD4001DR2G - LED-Treiber, 1 Ausgang, AEC-Q101, konstanter LED-Strom, bis zu 30Vin, 30V/500mAout, SOIC-8 tariffCode: 85423990 rohsCompliant: YES Ausgangsspannung, max.: 28V hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q100 IC-Gehäuse / Bauform: SOIC usEccn: EAR99 Betriebstemperatur, min.: -40°C Eingangsspannung, max.: 30V euEccn: NLR Ausgangsstrom, max.: 500mA Eingangsspannung, min.: -V Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 125°C | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVD4001DR2G | ONSEMI | Description: ONSEMI - NSVD4001DR2G - LED-Treiber, 1 Ausgang, AEC-Q101, konstanter LED-Strom, bis zu 30Vin, 30V/500mAout, SOIC-8 tariffCode: 85423990 rohsCompliant: YES Ausgangsspannung, max.: 28V hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q100 IC-Gehäuse / Bauform: SOIC usEccn: EAR99 Betriebstemperatur, min.: -40°C Eingangsspannung, max.: 30V euEccn: NLR Ausgangsstrom, max.: 500mA Eingangsspannung, min.: -V Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Betriebstemperatur, max.: 125°C | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVD4001DR2G | onsemi | Description: IC LED DRVR LIN PWM 500MA 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Min): 3.6V Voltage - Supply (Max): 30V Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVD4001DR2G | ON Semiconductor | auf Bestellung 680 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVD4001DR2G | onsemi | LED Lighting Drivers MI SO8 60V LED DRVR TR | auf Bestellung 2500 Stücke: Lieferzeit 101-105 Tag (e) |
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NSVD4001DR2G | ON Semiconductor | LED Driver 3 Segment Automotive 8-Pin SOIC N T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVD4001DR2G | onsemi | Description: IC LED DRVR LIN PWM 500MA 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Min): 3.6V Voltage - Supply (Max): 30V Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDAN222T1G | onsemi | Description: DIODE SW 80V DUAL SC75-3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDAN222T1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SS SC75 SWCH DIO 80V TR | auf Bestellung 15041 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVDAN222T1G | ON Semiconductor | Rectifier Diode Small Signal Switching 80V 0.1A 4ns Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDAN222T1G | onsemi | Description: DIODE SW 80V DUAL SC75-3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V | auf Bestellung 8883 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDAN222T1G | onsemi | Diodes - General Purpose, Power, Switching 80 V Dual Common Cathode Switching Diode | auf Bestellung 967 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDAP222T1G | ON Semiconductor | Diode Switching Diode 80V 0.1A 3-Pin SC-75 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDAP222T1G | onsemi | Description: DIODE SW 80V DUAL SC75-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDAP222T1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SWITCHING DIODE (DUA | auf Bestellung 5870 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVDTA113EM3T5G | onsemi | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSIST | auf Bestellung 4420 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA113EM3T5G | onsemi | Description: TRANS PNP 50V 0.1A SOT723 | auf Bestellung 7955 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA113EM3T5G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 600mW Automotive 3-Pin SOT-723 T/R | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVDTA113EM3T5G | onsemi | Description: TRANS PNP 50V 0.1A SOT723 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA114EET1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA114EET1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA114EET1G | ONSEMI | Description: ONSEMI - NSVDTA114EET1G - Bipolarer Transistor, pre-biased/digital, Einfach PNP, 50 V, 100 mA, 10 kohm, 10 kohm Dauer-Kollektorstrom Ic: 100 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 10 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: 10 Polarität des Digitaltransistors: Einfach PNP Bauform - HF-Transistor: SC-75 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Pins Produktpalette: DTA114EE Widerstandsverhältnis R1/R2: - SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA114EET1G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | auf Bestellung 60615 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA114EET1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA114EM3T5G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | auf Bestellung 5571 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA114EM3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 | auf Bestellung 112000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA114EM3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 | auf Bestellung 112000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA114EM3T5G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 600mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA114YM3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7890 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA114YM3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA114YM3T5G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 600mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA114YM3T5G | onsemi | Digital Transistors SS SOT-723 BIAS RESISTO | auf Bestellung 159 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA115EET1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 600mW Automotive 3-Pin SOT-416 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVDTA115EET1G | ON Semiconductor | Bipolar Transistors - BJT SS SC75 BR XSTR PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA115EET1G | ON Semiconductor | Description: TRANS PREBIAS PNP 0.2W SC75-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA123EM3T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SOT723 BR XSTR PN | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA123EM3T5G | ON Semiconductor | Description: TRANS PNP 50V 0.1A SOT723 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA123EM3T5G | ON Semiconductor | Digital BJT Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA123JM3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA123JM3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA123JM3T5G | onsemi | Digital Transistors SS SOT723BR XSTR PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA123JM3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA143EM3T5G | onsemi | Digital Transistors BIAS RESISTOR TRANSISTO | auf Bestellung 10223 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA143EM3T5G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 600mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA143ZET1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA143ZET1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | auf Bestellung 5500 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA143ZET1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA143ZET1G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | auf Bestellung 9569 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA143ZET1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVDTA144EET1G | ON Semiconductor | Bipolar Transistors - BJT SS SC75 BR XSTR PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA144EET1G | ON Semiconductor | Digital BJT Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA144EET1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA144WET1G | onsemi | Bipolar Transistors - Pre-Biased SS SC75 BR XSTR PNP | auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA144WET1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 | auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTA144WET1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTA144WET1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 | auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC113EM3T5G | onsemi | Digital Transistors NPN DIGITAL TRANSIST | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC113EM3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC113EM3T5G | ON Semiconductor | Bipolar Transistors - BJT NPN DIGITAL TRANSIST | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVDTC113EM3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC114YM3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | auf Bestellung 9256 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC114YM3T5G | onsemi | Digital Transistors NPN Bipolar Digital Transistor (BRT) | auf Bestellung 7507 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC114YM3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC123EM3T5G | ON Semiconductor | Description: TRANS NPN 50V 0.1A SOT723 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC123EM3T5G | onsemi | Bipolar Transistors - Pre-Biased SOT723 BIAS RESISTOR | auf Bestellung 2634 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC123EM3T5G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 600mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC123JET1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC123JET1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC123JET1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC123JET1G | onsemi | Bipolar Transistors - Pre-Biased SMALL SIGNAL BIAS RE | auf Bestellung 314 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC123JM3T5G | onsemi | Bipolar Transistors - Pre-Biased SOT-723BIAS RESISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC123JM3T5G | onsemi | Description: SOT-723 BIAS RESISTOR Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC123JM3T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased SOT-723BIAS RESISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC123JM3T5G | onsemi | Description: SOT-723 BIAS RESISTOR Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC123JM3T5G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 600mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC143ZET1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC143ZET1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5730 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC143ZET1G | onsemi | Digital Transistors NPN Bipolar Digital Transistor (BRT) | auf Bestellung 17710 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC143ZET1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 300mW Automotive AEC-Q101 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC143ZET1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC143ZM3T5G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 600mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC143ZM3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC143ZM3T5G | onsemi | Bipolar Transistors - Pre-Biased NPN Bipolar Digital Transistor (BRT) | auf Bestellung 8235 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC143ZM3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 2915 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC144EM3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC144EM3T5G | ON Semiconductor | Digital BJT Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC144EM3T5G | onsemi | Bipolar Transistors - Pre-Biased SS SOT723 BR XSTR NP | auf Bestellung 213 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC144EM3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC144TM3T5G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 600mW Automotive 3-Pin SOT-723 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC144TM3T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased SOT723 BIASED RESISTOR TR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC144TM3T5G | ON Semiconductor | Description: TRANS NPN 50V BIPOLAR SOT723 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVDTC144WET1G | ON Semiconductor | Bipolar Transistors - Pre-Biased Bias Resistor Transistor | auf Bestellung 11887 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVDTC144WET1G | onsemi | Description: NSVDTC144 - BIAS RESISTOR TRANSI | auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC144WET1G | ONSEMI | Description: ONSEMI - NSVDTC144WET1G - RF TRANSISTOR, NPN, 50V, 0.1A, SC-75 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 95900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVEMC2DXV5T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT553 Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-553 Part Status: Active | auf Bestellung 5109 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVEMC2DXV5T1G | onsemi | Bipolar Transistors - Pre-Biased SSP COMMON BASE BRT | auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVEMC2DXV5T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT553 Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-553 Part Status: Active | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVEMD4DXV6T5G | ON Semiconductor | Bipolar Transistors - BJT SS SOT563 DUL BRT TR | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVEMD4DXV6T5G | onsemi | Description: TRANS NPN/PNP DUAL BRT SOT563 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVEMD4DXV6T5G | ON Semiconductor | Dual Bias Resistor Digital Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVEMD4DXV6T5G | onsemi | Description: TRANS NPN/PNP DUAL BRT SOT563 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVEMT1DXV6T1G | onsemi | Description: TRANS 2PNP 60V 0.1A SOT563 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVEMT1DXV6T1G | onsemi | Description: TRANS 2PNP 60V 0.1A SOT563 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVEMT1DXV6T1G | onsemi | Bipolar Transistors - BJT SS DUAL PURPOSE TRAN | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVEMT1DXV6T5G | ON Semiconductor | Description: TRANS 2PNP 60V 0.1A SOT563 | auf Bestellung 64000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVEMT1DXV6T5G | ON Semiconductor | Bipolar Transistors - BJT SS DUAL PURPOSE TRAN | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVEMT1DXV6T5G | Rochester Electronics, LLC | Description: DUAL PNP BIPOLAR TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVEMX1DXV6T1G | onsemi | Bipolar Transistors - BJT Dual NPN Bipolar Transistor | auf Bestellung 7412 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVEMX1DXV6T1G | onsemi | Description: TRANS 2NPN 50V 0.1A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 52000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF2250WT1 | onsemi | Description: RF TRANS NPN 15V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF2250WT1G | onsemi | Description: RF TRANS NPN 15V SC70-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF2250WT1G | onsemi | Description: RF TRANS NPN 15V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF2250WT1G | ONSEMI | Description: ONSEMI - NSVF2250WT1G - TRANSISTOR NPN BIPO UHF SOT-323 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 108000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF3007SG3T1G | ON Semiconductor | auf Bestellung 2920 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVF3007SG3T1G | ONSEMI | Description: ONSEMI - NSVF3007SG3T1G - Bipolarer HF-Transistor, NPN, 12 V, 8 GHz, 350 mW, 30 mA, SC-70FL tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 30mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-70FL Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 12V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 8GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 110692 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF3007SG3T1G | ON Semiconductor | Trans RF BJT NPN 12V 0.03A 350mW Automotive 3-Pin MCPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF3007SG3T1G | onsemi | RF Bipolar Transistors RF-TR 12V 30MA FT=8G NPN | auf Bestellung 3000 Stücke: Lieferzeit 680-684 Tag (e) |
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NSVF3007SG3T1G | onsemi | Description: RF TRANSISTOR FOR LOW NOISE AMPL Packaging: Bulk Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 12dB Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: SC-70FL/MCPH3 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 107946 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF3007SG3T1G | ONSEMI | Description: ONSEMI - NSVF3007SG3T1G - Bipolarer HF-Transistor, NPN, 12 V, 8 GHz, 350 mW, 30 mA, SC-70FL tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 30mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-70FL Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 12V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 8GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 110692 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF4009SG4T1G | onsemi | Description: RF TRANS NPN 3.5V 25GHZ SC82FL/ Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17dB Power - Max: 120mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 3.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Supplier Device Package: SC-82FL/MCPH4 Part Status: Active | auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF4009SG4T1G | onsemi | RF Bipolar Transistors BIP NPN 40MA 3.5V FT=25G | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4009SG4T1G | onsemi | Description: RF TRANS NPN 3.5V 25GHZ SC82FL/ Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17dB Power - Max: 120mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 3.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Supplier Device Package: SC-82FL/MCPH4 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4009SG4T1G | ONSEMI | Description: ONSEMI - NSVF4009SG4T1G - RF TRANSISTOR FOR LOW NOISE AMPLIFIER MSL: MSL 1 - unbegrenzt SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4009SG4T1G | ON Semiconductor | auf Bestellung 2840 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVF4015SG4T1G | ON Semiconductor | Trans RF BJT NPN 12V 0.1A 450mW Automotive 4-Pin MCPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4015SG4T1G | ONSEMI | Description: ONSEMI - NSVF4015SG4T1G - Bipolarer HF-Transistor, NPN, 12 V, 10 GHz, 450 mW, 100 mA, SC-82FL tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 150hFE hazardous: false rohsPhthalatesCompliant: YES DC-Stromverstärkung hFE: 150hFE Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 450mW euEccn: NLR Verlustleistung: 450mW Bauform - Transistor: SC-82FL Bauform - HF-Transistor: SC-82FL Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 12V Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 12V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN DC-Kollektorstrom: 100mA Übergangsfrequenz: 10GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2852 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF4015SG4T1G | onsemi | Description: RF TRANS NPN 12V 10GHZ SC82FL/ Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17dB Power - Max: 450mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Part Status: Active | auf Bestellung 2145 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF4015SG4T1G | ON Semiconductor | auf Bestellung 2950 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVF4015SG4T1G | onsemi | Description: RF TRANS NPN 12V 10GHZ SC82FL/ Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17dB Power - Max: 450mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4015SG4T1G | ONSEMI | Description: ONSEMI - NSVF4015SG4T1G - Bipolarer HF-Transistor, NPN, 12 V, 10 GHz, 450 mW, 100 mA, SC-82FL tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 150hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 450mW Bauform - Transistor: SC-82FL Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 12V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 10GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2852 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF4015SG4T1G | onsemi | RF Bipolar Transistors BIP NPN 100MA 12V FT=10G | auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF4017SG4 | onsemi | onsemi BIP NPN 100MA 12V FT=10G | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4017SG4T1G | onsemi | RF Bipolar Transistors BIP NPN 100MA 12V FT=10G | auf Bestellung 23995 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF4017SG4T1G | ONSEMI | Description: ONSEMI - NSVF4017SG4T1G - Bipolarer HF-Transistor, NPN, 12 V, 10 GHz, 450 mW, 100 mA, SC-82FL tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 150hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 450mW Bauform - Transistor: SC-82FL Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 12V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 10GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) | auf Bestellung 1735 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF4017SG4T1G | ON Semiconductor | Trans RF BJT NPN 12V 0.1A 450mW Automotive 4-Pin MCPH T/R | auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVF4017SG4T1G | onsemi | Description: RF TRANS NPN 12V 10GHZ SC82FL/ Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17dB Power - Max: 450mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Grade: Automotive Part Status: Obsolete Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4017SG4T1G | ON Semiconductor | Trans RF BJT NPN 12V 0.1A 450mW Automotive AEC-Q101 4-Pin MCPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4017SG4T1G | onsemi | Description: RF TRANS NPN 12V 10GHZ SC82FL/ Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17dB Power - Max: 450mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Grade: Automotive Part Status: Obsolete Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4017SG4T1G | ONSEMI | Description: ONSEMI - NSVF4017SG4T1G - Bipolarer HF-Transistor, NPN, 12 V, 10 GHz, 450 mW, 100 mA, SC-82FL tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 150hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 450mW Bauform - Transistor: SC-82FL Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 12V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 10GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) | auf Bestellung 1735 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF4017SG4T1G | ONSEMI | NSVF4017SG4T1G-ONS NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4017SG4T1G | ON Semiconductor | Trans RF BJT NPN 12V 0.1A 450mW Automotive 4-Pin MCPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF4020SG4T1G | onsemi | Description: RF TRANS NPN 8V 16GHZ SC82FL/MCP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17.5dB Power - Max: 400mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF4020SG4T1G | ONSEMI | Description: ONSEMI - NSVF4020SG4T1G - Bipolarer HF-Transistor, NPN, 8 V, 16 GHz, 400 mW, 150 mA, SC-82FL tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 400mW Bauform - Transistor: SC-82FL Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 8V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 16GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF4020SG4T1G | ON Semiconductor | auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVF4020SG4T1G | onsemi | Description: RF TRANS NPN 8V 16GHZ SC82FL/MCP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17.5dB Power - Max: 400mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 79850 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF4020SG4T1G | onsemi | RF Bipolar Transistors BIP NPN 150MA 8V FT=16G | auf Bestellung 4041 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF5488SKT3G | ON Semiconductor | auf Bestellung 7925 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVF5488SKT3G | ON Semiconductor | Description: BIP NPN 70MA 10V FT=7G | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF5488SKT3G | ON Semiconductor | Trans RF BJT NPN 10V 0.07A 100mW Automotive AEC-Q101 3-Pin SSFP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF5488SKT3G | onsemi | RF Bipolar Transistors BIP NPN 70MA 10V F | auf Bestellung 7028 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF5488SKT3G | ON Semiconductor | Description: BIP NPN 70MA 10V FT=7G | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVF5490SKT3G | ONSEMI | Description: ONSEMI - NSVF5490SKT3G - Bipolarer HF-Transistor, NPN, 10 V, 8 GHz, 100 mW, 30 mA, SOT-623 tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 90hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 30mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-623 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 10V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 8GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 7781 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF5490SKT3G | ON Semiconductor | Trans RF BJT NPN 10V 0.03A 100mW Automotive 3-Pin SSFP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF5490SKT3G | onsemi | Description: RF-TR 10V 30MA FT=8G NPN | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF5490SKT3G | ON Semiconductor | Trans RF BJT NPN 10V 0.03A 100mW Automotive 3-Pin SSFP T/R | auf Bestellung 4619 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVF5490SKT3G | ONSEMI | Description: ONSEMI - NSVF5490SKT3G - Bipolarer HF-Transistor, NPN, 10 V, 8 GHz, 100 mW, 30 mA, SOT-623 tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 90hFE hazardous: false rohsPhthalatesCompliant: YES DC-Stromverstärkung hFE: 90hFE Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 30mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 100mW euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-623 Bauform - HF-Transistor: SOT-623 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 10V Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 10V productTraceability: No Wandlerpolarität: NPN DC-Kollektorstrom: 30mA Übergangsfrequenz: 8GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 7781 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF5490SKT3G | ON Semiconductor | Trans RF BJT NPN 10V 0.03A 100mW Automotive 3-Pin SSFP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF5490SKT3G | onsemi | RF Bipolar Transistors RF-TR 10V 30MA FT | auf Bestellung 13603 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF5490SKT3G | onsemi | Description: RF-TR 10V 30MA FT=8G NPN | auf Bestellung 7887 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF5501SKT3G | onsemi | Description: RF-TR 10V 70MA FT=5.5GHZ Packaging: Cut Tape (CT) Package / Case: SOT-623F Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 11dB Power - Max: 250mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Supplier Device Package: SOT-623/SSFP Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7208 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF5501SKT3G | ONSEMI | Description: ONSEMI - NSVF5501SKT3G - Bipolarer HF-Transistor, NPN, 10 V, 5.5 GHz, 250 mW, 70 mA, SOT-623 tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 70mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-623 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 10V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 5.5GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 7387 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF5501SKT3G | onsemi | RF Bipolar Transistors RF-TR 10V 70MA FT=5 .5GHZ | auf Bestellung 4777 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF5501SKT3G | onsemi | Description: RF-TR 10V 70MA FT=5.5GHZ Packaging: Tape & Reel (TR) Package / Case: SOT-623F Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 11dB Power - Max: 250mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Supplier Device Package: SOT-623/SSFP Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF5501SKT3G | ON Semiconductor | auf Bestellung 7950 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVF5501SKT3G | ONSEMI | Description: ONSEMI - NSVF5501SKT3G - Bipolarer HF-Transistor, NPN, 10 V, 5.5 GHz, 250 mW, 70 mA, SOT-623 Transistormontage: Oberflächenmontage DC-Stromverstärkung hFE: 100 Verlustleistung Pd: 250 Übergangsfrequenz ft: 5.5 Bauform - HF-Transistor: SOT-623 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 10 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: NPN DC-Kollektorstrom: 70 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 7399 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF6001SB6T1G | onsemi | RF Bipolar Transistors RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz | auf Bestellung 2992 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF6001SB6T1G | onsemi | Description: RF TRANS NPN 0.1A 12V MCPH6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 11dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: 6-CPH Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2877 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF6001SB6T1G | onsemi | Description: RF TRANS NPN 0.1A 12V MCPH6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 11dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: 6-CPH Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF6003SB6T1G | ONSEMI | Description: ONSEMI - NSVF6003SB6T1G - Bipolarer HF-Transistor, NPN, 12 V, 7 GHz, 800 mW, 150 mA, CPH tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: CPH Anzahl der Pins: 6Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 12V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 7GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2549 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF6003SB6T1G | onsemi | Description: RF TRANSISTOR, NPN SINGLE, 12 V, | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF6003SB6T1G | ON Semiconductor | auf Bestellung 20950 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVF6003SB6T1G | ONSEMI | Description: ONSEMI - NSVF6003SB6T1G - Bipolarer HF-Transistor, NPN, 12 V, 7 GHz, 800 mW, 150 mA, CPH tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: CPH Anzahl der Pins: 6Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 12V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 7GHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2549 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVF6003SB6T1G | ON Semiconductor | Description: RF TRANS NPN 12V 7GHZ 6CPH | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVF6003SB6T1G | onsemi | RF Bipolar Transistors BIP NPN 0.15A 12V FT=7G | auf Bestellung 2806 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVF6003SB6T1G | ON Semiconductor | Trans RF BJT NPN 12V 0.15A 800mW Automotive 6-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVF6003SB6T1G | ON Semiconductor | Description: RF TRANS NPN 12V 7GHZ 6CPH | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVG1001MXTAG | onsemi | RF Switch ICs Middle power SPDT RF switch, 8.5GHz, 1.6V Automotive Grade | auf Bestellung 3000 Stücke: Lieferzeit 665-669 Tag (e) |
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NSVG1001MXTAG | onsemi | Description: IC RF SWITCH SPDT 8.5GHZ 6DFN Packaging: Cut Tape (CT) Package / Case: 6-PowerXFDFN Mounting Type: Surface Mount, Wettable Flank Circuit: SPDT RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN Operating Temperature: -40°C ~ 125°C Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 8.5GHz Test Frequency: 8.5GHz Isolation: 20dB Supplier Device Package: 6-DFN (1x1) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVG1001MXTAG | ON Semiconductor | RF Switch SPDT 100MHz to 8.5GHz 17dB Automotive AEC-Q100 6-Pin XDFNW EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVG1001MXTAG | onsemi | Description: IC RF SWITCH SPDT 8.5GHZ 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerXFDFN Mounting Type: Surface Mount, Wettable Flank Circuit: SPDT RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN Operating Temperature: -40°C ~ 125°C Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 8.5GHz Test Frequency: 8.5GHz Isolation: 20dB Supplier Device Package: 6-DFN (1x1) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVG3109SG6T1G | ON Semiconductor | MMIC Amplifier, 3 V, 16mA | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVG3109SG6T1G | onsemi | Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Frequency: 100MHz ~ 3.6GHz RF Type: General Purpose Voltage - Supply: 2.7V ~ 3V Gain: 27dB Current - Supply: 16mA Noise Figure: 4.3dB P1dB: 6.4dBm Test Frequency: 1GHz Supplier Device Package: SC-88FL/MCPH6 Grade: Automotive Qualification: AEC-Q100 | auf Bestellung 4608 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVG3109SG6T1G | onsemi | RF Amplifier MMIC, AMPLIFIER, 3 V, 6 MA, 0.1 TO 2.8 GHZ | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVG3109SG6T1G | onsemi | Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Frequency: 100MHz ~ 3.6GHz RF Type: General Purpose Voltage - Supply: 2.7V ~ 3V Gain: 27dB Current - Supply: 16mA Noise Figure: 4.3dB P1dB: 6.4dBm Test Frequency: 1GHz Supplier Device Package: SC-88FL/MCPH6 Grade: Automotive Qualification: AEC-Q100 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVG3117SG6T1G | onsemi | Description: IC RF AMP GPS 100MHZ-3GHZ SC88FL Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Frequency: 100MHz ~ 3GHz RF Type: General Purpose Voltage - Supply: 4.5V ~ 5.5V Gain: 35.5dB Current - Supply: 22.7mA Noise Figure: 3.9dB P1dB: 9.8dBm Test Frequency: 1GHz Supplier Device Package: SC-88FL/MCPH6 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVG3117SG6T1G | onsemi | RF Amplifier MMIC Wideband Amplifier, 5 V, 22.7 mA, 0.1 to 3 GHz, MCPH6 Automotive Grade part | auf Bestellung 1461 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVG3117SG6T1G | ON Semiconductor | MMIC Wideband Amplifier, 5 V, 22.7 mA, 0.1 to 3 GHz, MCPH6 Automotive Grade part | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVG3117SG6T1G | onsemi | Description: IC RF AMP GPS 100MHZ-3GHZ SC88FL Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Frequency: 100MHz ~ 3GHz RF Type: General Purpose Voltage - Supply: 4.5V ~ 5.5V Gain: 35.5dB Current - Supply: 22.7mA Noise Figure: 3.9dB P1dB: 9.8dBm Test Frequency: 1GHz Supplier Device Package: SC-88FL/MCPH6 | auf Bestellung 8364 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVIMD10AMT1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SURF MT BIASED RES XSTR | auf Bestellung 1973 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NSVIMD10AMT1G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 500mA 285mW Automotive 6-Pin SC-74R T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVIMD10AMT1G | onsemi | Description: SURF MT BIASED RES XSTR Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 285mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V Resistor - Base (R1): 13kOhms, 130Ohms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-74R Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVIMD10AMT1G | onsemi | Description: SURF MT BIASED RES XSTR Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 285mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V Resistor - Base (R1): 13kOhms, 130Ohms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-74R Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3088 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ2394SA3T1G | onsemi | Description: JFET N-CH 15V 50MA SC59-3/CP3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Voltage - Breakdown (V(BR)GSS): 15 V Current Drain (Id) - Max: 50 mA Supplier Device Package: SC-59-3/CP3 Grade: Automotive Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 700 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V Qualification: AEC-Q101 | auf Bestellung 23088 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ2394SA3T1G | ONSEMI | Description: ONSEMI - NSVJ2394SA3T1G - JFET-Transistor, 15 V, 32 mA, -1.5 V, SC-59, 3 Pins, 150 °C tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 32mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Gate/Source-Durchbruchspannung, max.: 15V Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.5V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1377 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ2394SA3T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive AEC-Q101 3-Pin SC-59 T/R | auf Bestellung 5644 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVJ2394SA3T1G | onsemi | Description: JFET N-CH 15V 50MA SC59-3/CP3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Voltage - Breakdown (V(BR)GSS): 15 V Current Drain (Id) - Max: 50 mA Supplier Device Package: SC-59-3/CP3 Grade: Automotive Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 700 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ2394SA3T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive AEC-Q101 3-Pin SC-59 T/R | auf Bestellung 5644 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVJ2394SA3T1G | onsemi | JFETs N-Channel JFET, 15 V, 10 to 32 mA, 38 mS | auf Bestellung 4586 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ2394SA3T1G | ONSEMI | Description: ONSEMI - NSVJ2394SA3T1G - JFET-Transistor, 15 V, 32 mA, -1.5 V, SC-59, 3 Pins, 150 °C tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 32mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Gate/Source-Durchbruchspannung, max.: 15V Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.5V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1377 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ2394SA3T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ2394SA3T1G | ON Semiconductor | auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVJ2394SA3T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive AEC-Q101 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ3557SA3T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive AEC-Q101 3-Pin SC-59 T/R | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ3557SA3T1G | onsemi | JFET NCH J-FET | auf Bestellung 31093 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ3557SA3T1G | onsemi | Description: JFET N-CH 15V 50MA SC59-3/CP3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Voltage - Breakdown (V(BR)GSS): 15 V Current Drain (Id) - Max: 50 mA Supplier Device Package: SC-59-3/CP3 Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1921 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ3557SA3T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ3557SA3T1G | ONSEMI | Description: ONSEMI - NSVJ3557SA3T1G - JFET-Transistor, 15 V, 32 mA, -1.5 V, SC-59, 3 Pins, 150 °C tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 32mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Gate/Source-Durchbruchspannung, max.: 15V Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.5V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5091 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ3557SA3T1G | ON Semiconductor | auf Bestellung 2815 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NSVJ3557SA3T1G | onsemi | Description: JFET N-CH 15V 50MA SC59-3/CP3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Voltage - Breakdown (V(BR)GSS): 15 V Current Drain (Id) - Max: 50 mA Supplier Device Package: SC-59-3/CP3 Grade: Automotive Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ3557SA3T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive AEC-Q101 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ3557SA3T1G | ONSEMI | Description: ONSEMI - NSVJ3557SA3T1G - JFET-Transistor, 15 V, 32 mA, -1.5 V, SC-59, 3 Pins, 150 °C tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 32mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Drainstrom bei Gate-Nullspannung Idss, min.: 10mA euEccn: NLR Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Gate/Source-Durchbruchspannung, max.: 15V Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Transistortyp: JFET Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.5V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5091 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ3910SB3 | onsemi | NCH J-FET | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ3910SB3T1G | ONSEMI | Description: ONSEMI - NSVJ3910SB3T1G - JFET-Transistor, -25 V, 40 mA, -1.8 V, CPH, 3 Pins, 150 °C tariffCode: 85413000 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 40mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Drainstrom bei Gate-Nullspannung Idss, min.: 20mA euEccn: NLR Bauform - Transistor: CPH Anzahl der Pins: 3 Pins Gate/Source-Durchbruchspannung, max.: -25V Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Transistortyp: JFET Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.8V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1143 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ3910SB3T1G | ON Semiconductor | Trans JFET N-CH 25V 50mA Automotive AEC-Q101 3-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ3910SB3T1G | onsemi | JFET N-Channel JFET, -25 V, 20 to 40 mA, 40 mS | auf Bestellung 33000 Stücke: Lieferzeit 171-175 Tag (e) |
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NSVJ3910SB3T1G | onsemi | Description: JFET N-CH 25V 50MA 3CPH Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 50 mA Supplier Device Package: 3-CPH Part Status: Active Drain to Source Voltage (Vdss): 25 V Power - Max: 400 mW Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ3910SB3T1G | ONSEMI | Description: ONSEMI - NSVJ3910SB3T1G - JFET-Transistor, -25 V, 40 mA, -1.8 V, CPH, 3 Pins, 150 °C tariffCode: 85413000 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 40mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Bauform - Transistor: CPH Anzahl der Pins: 3 Pins Gate/Source-Durchbruchspannung, max.: -25V Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.8V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1143 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ3910SB3T1G | onsemi | Description: JFET N-CH 25V 50MA 3CPH Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 50 mA Supplier Device Package: 3-CPH Part Status: Active Drain to Source Voltage (Vdss): 25 V Power - Max: 400 mW Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ3910SB3T1G | ON Semiconductor | Trans JFET N-CH 25V 50mA Automotive AEC-Q101 3-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ3910SB3T1G | ON Semiconductor | Trans JFET N-CH 25V 50mA Automotive 3-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ5908DSG5T1G | onsemi | Description: JFET 2N-CH 15V 50MA SC88AFL/MCPH Packaging: Tape & Reel (TR) Package / Case: 5-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 10.5pF @ 5V (Typ) Voltage - Breakdown (V(BR)GSS): 15 V Current Drain (Id) - Max: 50 mA Supplier Device Package: SC-88AFL/MCPH5 Part Status: Active Drain to Source Voltage (Vdss): 15 V Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ5908DSG5T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive 5-Pin MCPH T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVJ5908DSG5T1G | ONSEMI | Description: ONSEMI - NSVJ5908DSG5T1G - JFET-Transistor, -15 V, 32 mA, -1.5 V, MCPH, 5 Pins, 150 °C tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 32mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Bauform - Transistor: MCPH Anzahl der Pins: 5 Pins Gate/Source-Durchbruchspannung, max.: -15V Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.5V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2755 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ5908DSG5T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive 5-Pin MCPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ5908DSG5T1G | ON Semiconductor | Trans JFET N-CH 15V 50mA Automotive 5-Pin MCPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ5908DSG5T1G | onsemi | Description: JFET 2N-CH 15V 50MA SC88AFL/MCPH Packaging: Cut Tape (CT) Package / Case: 5-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 10.5pF @ 5V (Typ) Voltage - Breakdown (V(BR)GSS): 15 V Current Drain (Id) - Max: 50 mA Supplier Device Package: SC-88AFL/MCPH5 Grade: Automotive Part Status: Active Drain to Source Voltage (Vdss): 15 V Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V Qualification: AEC-Q101 | auf Bestellung 926 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ5908DSG5T1G | ONSEMI | Description: ONSEMI - NSVJ5908DSG5T1G - JFET-Transistor, -15 V, 32 mA, -1.5 V, MCPH, 5 Pins, 150 °C tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 32mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Durchbruchspannung Vbr: -15V euEccn: NLR Bauform - Transistor: MCPH Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 5 Pins Gate/Source-Durchbruchspannung, max.: -15V Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.5V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2755 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ5908DSG5T1G | onsemi | JFET NCH+NCH J-FET | auf Bestellung 2048 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ6904DSB6 | onsemi | onsemi JFET -25V 20 TO 40MA DUA | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ6904DSB6T1G | ONSEMI | Description: ONSEMI - NSVJ6904DSB6T1G - JFET-Transistor, -25 V, 40 mA, -1.8 V, CPH, 6 Pins, 150 °C tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 40mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Drainstrom bei Gate-Nullspannung Idss, min.: 20mA Durchbruchspannung Vbr: -25V euEccn: NLR Bauform - Transistor: CPH Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6 Pins Gate/Source-Durchbruchspannung, max.: -25V Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Transistortyp: JFET Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.8V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3556 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ6904DSB6T1G | onsemi | JFET JFET -25V, 20 TO 40MA DUA | auf Bestellung 4412 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ6904DSB6T1G | ON Semiconductor | Trans JFET N-CH 25V 50mA Automotive 6-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ6904DSB6T1G | onsemi | Description: JFET 2N-CH 25V 50MA 6CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 50 mA Supplier Device Package: 6-CPH Grade: Automotive Drain to Source Voltage (Vdss): 25 V Power - Max: 700 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ6904DSB6T1G | ON Semiconductor | Trans JFET N-CH 25V 50mA Automotive AEC-Q101 6-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ6904DSB6T1G | ONSEMI | Description: ONSEMI - NSVJ6904DSB6T1G - JFET-Transistor, -25 V, 40 mA, -1.8 V, CPH, 6 Pins, 150 °C tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drainstrom bei Gate-Nullspannung, max.: 40mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Drainstrom bei Gate-Nullspannung Idss, min.: 20mA euEccn: NLR Bauform - Transistor: CPH Anzahl der Pins: 6 Pins Gate/Source-Durchbruchspannung, max.: -25V Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Transistortyp: JFET Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -1.8V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3556 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NSVJ6904DSB6T1G | ON Semiconductor | Trans JFET N-CH 25V 50mA Automotive AEC-Q101 6-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ6904DSB6T1G | ON Semiconductor | Trans JFET N-CH 25V 50mA Automotive AEC-Q101 6-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVJ6904DSB6T1G | onsemi | Description: JFET 2N-CH 25V 50MA 6CPH Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 50 mA Supplier Device Package: 6-CPH Grade: Automotive Drain to Source Voltage (Vdss): 25 V Power - Max: 700 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V Qualification: AEC-Q101 | auf Bestellung 2766 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVJ6904DSB6T1G | ON Semiconductor | Trans JFET N-CH 25V 50mA Automotive AEC-Q101 6-Pin CPH T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVM1MA141WAT1G | ON Semiconductor | Description: DIODE SW 40V DUAL CA SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVM1MA141WAT1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SS SC70 SWCH DIO 40V TR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVM1MA152WAT1G | ON Semiconductor | Description: DIODE SW 80V DUAL CA SC59-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVM1MA152WAT1G | onsemi | Diodes - General Purpose, Power, Switching SS SC59 SWCH DIO 80V TR | auf Bestellung 1933 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVM1MA152WAT1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SS SC59 SWCH DIO 80V TR | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVM1MA152WKT1G | onsemi | Description: DIODE ARRAY GP 80V 100MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-59 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V Qualification: AEC-Q101 | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVM1MA152WKT1G | ON Semiconductor | Rectifier Diode Small Signal Switching Si 80V 0.15A 3ns Automotive 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVM1MA152WKT1G | onsemi | Description: DIODE ARRAY GP 80V 100MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-59 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVM1MA152WKT1G | onsemi | Diodes - General Purpose, Power, Switching SS SC59 SWCH DIO 80V TR | auf Bestellung 7874 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMBD54DWT1G | ON Semiconductor | Schottky Diodes & Rectifiers SMALL SIGNAL SCHOTTK | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVMBD54DWT1G | ON Semiconductor | Description: DIODE SCHOTTKY DUAL 30V SOT363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVMBD770DW1T1G | onsemi | Schottky Diodes & Rectifiers 100 mA, 7 V, Schottky Diode, Dual Isolated | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVMBD770DW1T1G | onsemi | Description: DIODE ARR SCHOTT 70V 100MA SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-88/SC70-6/SOT-363 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 mA Current - Reverse Leakage @ Vr: 200 nA @ 35 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMBD770DW1T1G | ON Semiconductor | Diode RF Schottky 70V 380mW Automotive AEC-Q101 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVMBD770DW1T1G | onsemi | Description: DIODE ARR SCHOTT 70V 100MA SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-88/SC70-6/SOT-363 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 mA Current - Reverse Leakage @ Vr: 200 nA @ 35 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMBT3904DW1T3G | ON Semiconductor | Trans GP BJT NPN 40V 0.2A 150mW Automotive 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVMBT3904DW1T3G | onsemi | Description: TRANS 2NPN 40V 0.2A SC88-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMBT3904DW1T3G | ON Semiconductor | Trans GP BJT NPN 40V 0.2A 150mW Automotive 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NSVMBT3904DW1T3G | onsemi | Description: TRANS 2NPN 40V 0.2A SC88-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMBT3904DW1T3G | onsemi | Bipolar Transistors - BJT SS SC88 GP XSTR NPN 40V | Produkt ist nicht verfügbar |