![NSVBC143TPDXV6T1G NSVBC143TPDXV6T1G](https://download.siliconexpert.com/pdfs/2017/5/11/9/9/45/374/ons_/manual/6sot.jpg)
NSVBC143TPDXV6T1G ON Semiconductor
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details NSVBC143TPDXV6T1G ON Semiconductor
Description: TRANS PREBIAS NPN/PNP 50V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NSVBC143TPDXV6T1G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
NSVBC143TPDXV6T1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
NSVBC143TPDXV6T1G | Hersteller : onsemi |
![]() |
Produkt ist nicht verfügbar |