Produkte > ONSEMI > NSV40302PDR2G
NSV40302PDR2G

NSV40302PDR2G onsemi

NSS40302P_D-2318468.pdf Hersteller: onsemi
Bipolar Transistors - BJT COMP 40V NPN/PNP LO
auf Bestellung 34916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.36 EUR
10+ 1.18 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.58 EUR
2500+ 0.47 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details NSV40302PDR2G onsemi

Description: TRANS NPN/PNP 40V 3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 653mW, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: 8-SOIC.

Weitere Produktangebote NSV40302PDR2G nach Preis ab 0.58 EUR bis 1.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSV40302PDR2G NSV40302PDR2G Hersteller : onsemi nss40302p-d.pdf Description: TRANS NPN/PNP 40V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.18 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
NSV40302PDR2G NSV40302PDR2G Hersteller : onsemi nss40302p-d.pdf Description: TRANS NPN/PNP 40V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar