![NSV40300MDR2G NSV40300MDR2G](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/6031/488%7E751-07%7ED%2CDF%2CDR%2CD1%2CESA%2CR%2CS%7E8.jpg)
NSV40300MDR2G onsemi
![nss40300md-d.pdf](/images/adobe-acrobat.png)
Description: TRANS 2PNP 40V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
auf Bestellung 2478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.37 EUR |
16+ | 1.13 EUR |
100+ | 0.88 EUR |
500+ | 0.75 EUR |
1000+ | 0.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSV40300MDR2G onsemi
Description: TRANS 2PNP 40V 3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 653mW, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: 8-SOIC.
Weitere Produktangebote NSV40300MDR2G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
NSV40300MDR2G | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
NSV40300MDR2G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
|
![]() |
NSV40300MDR2G | Hersteller : onsemi |
![]() |
Produkt ist nicht verfügbar |