Produkte > ONSEMI > NSV60200SMTWTBG
NSV60200SMTWTBG

NSV60200SMTWTBG onsemi

nss60200smt-d.pdf Hersteller: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details NSV60200SMTWTBG onsemi

Description: TRANS PNP 60V 2A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V, Frequency - Transition: 155MHz, Supplier Device Package: 6-WDFN (2x2), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.

Weitere Produktangebote NSV60200SMTWTBG nach Preis ab 0.3 EUR bis 1 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSV60200SMTWTBG NSV60200SMTWTBG Hersteller : onsemi NSS60200SMT_D-2318437.pdf Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.97 EUR
10+ 0.83 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.38 EUR
3000+ 0.34 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3
NSV60200SMTWTBG NSV60200SMTWTBG Hersteller : onsemi nss60200smt-d.pdf Description: TRANS PNP 60V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.85 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 18