Produkte > IMB
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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IMB-9454G-R20 | IEI Technology Corporation | MICRO-ATX MOTHERBOARD, CORE2 DUO CPU 800/1066/1333 MHZ FSB WITH VGA, DUAL PCIE GBE, SATA II | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-9454G-R40 | IEI Technology Corporation | SBC, Intel CPU 4GB DDR2 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-AM5-R10 | IEI | Industrial Motherboards micro-ATX motherboard supports AMD 7000 series processor, DDR5, triple independent displays, dual 2.5GbE LAN, M.2, USB 3.2, SATA 6Gb/s, HD Audio and RoH | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-C2060-R10 | IEI Technology Corporation | SBC, Intel CPU 32GB DDR3 1000Mbps | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-G41A-R10 | IEI Technology Corporation | SBC, 2.66GHz Intel CPU 4GB DDR3 1000Mbps 2048x1536Pixels | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-G41A-R10-EKA | IEI Technology Corporation | M-ATX MB LGA775 CORE 2 QUAD | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-H110-ECO-R10 | IEI | Single Board Computers microATX Motherboard supports 14nm LGA1151 6th Generation Intel Core i7/i5/i3, Pentium or Celeron processor per Intel H110 , DDR4 , VGA/DVI-I/LVDS, Dual GbE LAN, USB 3.0, SATA 6Gb/s, HD Audio, ECO Packing and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-H110-R10 | IEI | Single Board Computers microATX Motherboard supports 14nm LGA1151 6th Generation Intel Core i7/i5/i3, Pentium or Celeron processor per Intel H110 , DDR4 , VGA/DVI-I/LVDS, Dual GbE LAN, USB 3.0, SATA 6Gb/s, HD Audio and RoHS | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB-H110-R10 | IEI Technology Corporation | Motherboard, Intel CPU 64GB DDR4 1000Mbps 3480x2160Pixels | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-H610A-R10 | Aaeon | MICRO/ATX MB WITH LGA1155 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-H610A-R10 | IEI | Single Board Computers Micro ATX Motherboard supports 32nm LGA1155 Intel Core i7/i5/i3/Pentium/Celeron CPU with Intel H61,DDR3,VGA/DVI-D,Dual Realtek PCIe GbE, USB 2.0, 6xCOM,SATA 3Gb/s, HD Audio and RoHS | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB-H810-ECO-R11 | IEI | Single Board Computers LGA1150 Intel Core i7/i5/i3, Pentium and Celeron CPU per Intel H81, DDR3, VGA, Dual PCIe GbE, USB 2.0, COM, LPT, SATA 6Gb/s, HD Audio, ECO packing, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-H810-i2-R11 | IEI | Single Board Computers Micro ATX Motherboard supports 22nm LGA1150 Intel Core i7/i5/i3 CPU per Intel H81, DDR3, VGA, Dual Intel PCIe GbE, USB 2.0, PCI, COM, LPT, SATA 3Gb/s, HD Audio, iRIS and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-M40H | ADLINK Technology | Single Board Computers ATX Embedded Motherboard supports Intel 3rd Generation i7/i5/i3 Processors, 1x PCIe x16, 2x PCIe x1 and 4x PCI slots BIOS Rev. A1.16 | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB-M42H | ADLINK Technology | Single Board Computers ATX Embedded Motherboard supports Intel 4th Generation i7/i5/i3 Processors, 1x PCIe x16, 1x PCIe x4 and 4x PCI slots | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-M43 | ADLINK Technology | Single Board Computers IMB-M43 IMB-M43 ATX Embedded Motherboardsupports Intel 6th/7th Generation i7/i5/i3 Processors, 1x PCIe x8, 4x PCIe x4 and 2x PCI slots | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB-M43-C236 | ADLINK Technology | Single Board Computers IMB-M43-C236 IMB-M43 ATX Embedded Motherboardsupports Intel 6th/7th Generation E3Processors, 1x PCIe x8, 4x PCIe x4 and 2x PCI slots | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB-M43H | ADLINK Technology | Single Board Computers IMB-M43HIMB-M43H ATX Embedded Motherboard supports Intel 6th/7 th Generation i7/i5/i3 Processors, 1x PCIex16, 1x PCIex4 and 5x PCI slots, BIOS REV:1.08.10,HS | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-M46 | ADLINK Technology | IMB-M46 ATX Embedded Motherboard, Intel 10th Core-I, Q470E, DDR4, PCIe Gen 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-M47 | ADLINK Technology | IMB-M47 ATX Embedded Motherboard, Intel 12th Core-I, Q670, DDR5, PCIe Gen 5 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-M47-R680E | ADLINK Technology | IMB-M47-R680E, ATX Embedded Motherboard, Intel 12th Gen Core I, R680E, DDR5, PCIe Gen 5 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-M47H | ADLINK Technology | IMB-M47H ATX Embedded Motherboard, Intel 12th Core-I, H610E, DDR5, PCIe Gen 5 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-Q670-R30 | IEI | Single Board Computers Micro ATX Motherboard supports 32nm LGA1155 Intel Core i7/i5/i3 CPU per Intel Q67, DDR3, VGA/DVI/HDMI, Dual Intel PCIe GbE, USB 3.0, 10 COM, SATA 6Gb/s, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-Q770-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm LGA1151 Intel Xeon E3 v5,Core i3, Pentium , Celeron per Intel C236, DDR4, triple Independent displays VGA/DVI-D/ HDMI 2.0,Dual Intel GbE, USB 3.0, SATA 6Gb/s, HD Audio, IPMI2.0 and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-Q870-i2-R10 | IEI | Single Board Computers Micro ATX Motherboard supports 22nm LGA1150 Intel Core i7/i5/i3/Pentium and Celeron CPU per Intel Q87,DDR3,HDMI/ DVI-D/ VGA / DP,Dual Intel PCIe GbE,USB 3.0,SATA 6Gb/s,Six Serial Ports, Audio, iRIS-2400 and RoHS | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB-S90 | ADLINK Technology | Single Board Computers ExtendATX Server Board support Dual Xeon-E5 Processors,4x PCIe x16, 1x PCIe x8 and 1xPCIe x4slots | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-T10 | ADLINK Technology | Single Board Computers Mini-ITX Embedded Motherboard w/Intel Atom D2550 processor & Intel NM10 chipset, BIOS Rev P1.1 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB-T10B | ADLINK Technology | Single Board Computers Mini-ITX Embedded Motherboard w/Intel Atom D2550 processor & Intel NM10 chipset w/CPU Fan, BIOS Rev P1.0 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB0105S05 | XP POWER | IMB0105S05 DC/DC Converters | Produkt ist nicht verfügbar | |||||||||||||||||
IMB0105S05 | XP Power | Non-Isolated DC/DC Converters DC-DC, 1W, SIP7, MEDICAL | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB0105S05 | XP Power | Description: DC DC CONVERTER 5V 1W Packaging: Tube Package / Case: 7-SIP Module, 4 Leads Size / Dimension: 0.87" L x 0.30" W x 0.49" H (22.0mm x 7.5mm x 12.5mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: Medical Voltage - Input (Max): 5.5V Approval Agency: CB, TUV, UL Efficiency: 79% Current - Output (Max): 200mA Voltage - Input (Min): 4.5V Voltage - Output 1: 5V Part Status: Active Power (Watts): 1 W Number of Outputs: 1 Voltage - Isolation: 4 kV | Produkt ist nicht verfügbar | |||||||||||||||||
IMB0105S12 | XP Power | Non-Isolated DC/DC Converters DC-DC, 1W, SIP7, MEDICAL | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB0105S12 | XP Power | Description: DC DC CONVERTER 12V 1W Packaging: Tube Package / Case: 7-SIP Module, 4 Leads Size / Dimension: 0.87" L x 0.30" W x 0.49" H (22.0mm x 7.5mm x 12.5mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: Medical Voltage - Input (Max): 5.5V Approval Agency: CB, TUV, UL Efficiency: 80% Current - Output (Max): 84mA Voltage - Input (Min): 4.5V Voltage - Output 1: 12V Part Status: Active Power (Watts): 1 W Number of Outputs: 1 Voltage - Isolation: 4 kV | auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB0105S12 | XP POWER | IMB0105S12 DC/DC Converters | Produkt ist nicht verfügbar | |||||||||||||||||
IMB0112S05 | XP POWER | Category: DC/DC Converters Description: Converter: DC/DC; 1W; Uin: 10.8÷13.2V; Uout: 5VDC; Iout: 200mA; SIP7 Manufacturer series: IMB01 Body dimensions: 22x12.5x7.5mm Mounting: THT Operating temperature: -40...105°C Case: SIP7 Power: 1W Number of outputs: 1 Output voltage: 5V DC Output current: 0.2A Insulation voltage: 4kV DC Input voltage: 10.8...13.2V Type of converter: DC/DC Efficiency: 79% Switching frequency: 60kHz Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB0112S05 | XP Power | Non-Isolated DC/DC Converters DC-DC, 1W, SIP7, MEDICAL | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB0112S05 | XP Power | Description: DC DC CONVERTER 5V 1W Packaging: Tube Package / Case: 7-SIP Module, 4 Leads Size / Dimension: 0.87" L x 0.30" W x 0.49" H (22.0mm x 7.5mm x 12.5mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: Medical Voltage - Input (Max): 13.2V Approval Agency: CB, TUV, UL Efficiency: 79% Current - Output (Max): 200mA Voltage - Input (Min): 10.8V Voltage - Output 1: 5V Part Status: Active Power (Watts): 1 W Number of Outputs: 1 Voltage - Isolation: 4 kV | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB0112S05 | XP POWER | Category: DC/DC Converters Description: Converter: DC/DC; 1W; Uin: 10.8÷13.2V; Uout: 5VDC; Iout: 200mA; SIP7 Manufacturer series: IMB01 Body dimensions: 22x12.5x7.5mm Mounting: THT Operating temperature: -40...105°C Case: SIP7 Power: 1W Number of outputs: 1 Output voltage: 5V DC Output current: 0.2A Insulation voltage: 4kV DC Input voltage: 10.8...13.2V Type of converter: DC/DC Efficiency: 79% Switching frequency: 60kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB0112S12 | XP POWER | Category: DC/DC Converters Description: Converter: DC/DC; 1W; Uin: 12V; Uout: 12VDC; Iout: 84mA; SIP7; THT Type of converter: DC/DC Power: 1W Input voltage: 12V Output voltage: 12V DC Output current: 84mA Case: SIP7 Mounting: THT Manufacturer series: IMB01 Body dimensions: 22x12.5x7.5mm Efficiency: 81% Operating temperature: -40...105°C Switching frequency: 60kHz Insulation voltage: 4kV DC Number of outputs: 1 Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB0112S12 | XP Power | Non-Isolated DC/DC Converters DC-DC, 1W, SIP7, MEDICAL | auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB0112S12 | XP Power | Description: DC DC CONVERTER 12V 1W Packaging: Tube Package / Case: 7-SIP Module, 4 Leads Size / Dimension: 0.87" L x 0.30" W x 0.49" H (22.0mm x 7.5mm x 12.5mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: Medical Voltage - Input (Max): 13.2V Approval Agency: CB, TUV, UL Efficiency: 81% Current - Output (Max): 84mA Voltage - Input (Min): 10.8V Voltage - Output 1: 12V Part Status: Active Power (Watts): 1 W Number of Outputs: 1 Voltage - Isolation: 4 kV | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB0112S12 | XP POWER | Category: DC/DC Converters Description: Converter: DC/DC; 1W; Uin: 12V; Uout: 12VDC; Iout: 84mA; SIP7; THT Type of converter: DC/DC Power: 1W Input voltage: 12V Output voltage: 12V DC Output current: 84mA Case: SIP7 Mounting: THT Manufacturer series: IMB01 Body dimensions: 22x12.5x7.5mm Efficiency: 81% Operating temperature: -40...105°C Switching frequency: 60kHz Insulation voltage: 4kV DC Number of outputs: 1 | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB0124S05 | XP POWER | IMB0124S05 DC/DC Converters | Produkt ist nicht verfügbar | |||||||||||||||||
IMB0124S05 | XP Power | Non-Isolated DC/DC Converters DC-DC, 1W, SIP7, MEDICAL | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB0124S12 | XP Power | Description: DC DC CONVERTER 12V 1W Packaging: Tube Package / Case: 7-SIP Module, 4 Leads Size / Dimension: 0.87" L x 0.30" W x 0.49" H (22.0mm x 7.5mm x 12.5mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: Medical Voltage - Input (Max): 26.4V Approval Agency: CB, TUV, UL Efficiency: 79% Current - Output (Max): 84mA Voltage - Input (Min): 21.6V Voltage - Output 1: 12V Power (Watts): 1 W Number of Outputs: 1 Voltage - Isolation: 4 kV | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB0124S12 | XP POWER | Category: DC/DC Converters Description: Converter: DC/DC; 1W; Uin: 24V; Uout: 12VDC; Iout: 84mA; SIP7; THT Type of converter: DC/DC Power: 1W Input voltage: 24V Output voltage: 12V DC Output current: 84mA Case: SIP7 Mounting: THT Manufacturer series: IMB01 Body dimensions: 22x12.5x7.5mm Efficiency: 79% Operating temperature: -40...105°C Switching frequency: 60kHz Insulation voltage: 4kV DC Number of outputs: 1 | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB0124S12 | XP POWER | Category: DC/DC Converters Description: Converter: DC/DC; 1W; Uin: 24V; Uout: 12VDC; Iout: 84mA; SIP7; THT Type of converter: DC/DC Power: 1W Input voltage: 24V Output voltage: 12V DC Output current: 84mA Case: SIP7 Mounting: THT Manufacturer series: IMB01 Body dimensions: 22x12.5x7.5mm Efficiency: 79% Operating temperature: -40...105°C Switching frequency: 60kHz Insulation voltage: 4kV DC Number of outputs: 1 Anzahl je Verpackung: 1 Stücke | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB0124S12 | XP Power | Non-Isolated DC/DC Converters DC-DC, 1W, SIP7, MEDICAL | auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB01CGR | TE Connectivity | High Frequency / RF Relays 140MW 3V DIELEC .2500VAC | Produkt ist nicht verfügbar | |||||||||||||||||
IMB01CTS | TE Connectivity | High Frequency / RF Relays IM RELAY 140MW 3V DIEL. 2500VAC | Produkt ist nicht verfügbar | |||||||||||||||||
IMB02CGR | TE Connectivity | High Frequency / RF Relays 140MW 4.5V dielectic 2500Vac | Produkt ist nicht verfügbar | |||||||||||||||||
IMB02CTS | TE Connectivity | High Frequency / RF Relays THT standard | Produkt ist nicht verfügbar | |||||||||||||||||
IMB02IGR | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 4.5V Packaging: Cut Tape (CT) Mounting Type: Surface Mount Coil Voltage: 4.5VDC Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Approval Agency: UR Relay Type: Telecom Coil Current: 31 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 0.45 VDC Must Operate Voltage: 3.38 VDC Operate Time: 3 ms Release Time: 3 ms Part Status: Active Load - Max Switching: 500VA, 440W | auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB02IGR | TE Connectivity / Axicom | Low Signal Relays - PCB IMB02IGR =IM Relay 140 mW 4,5V | auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB02IGR | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 4.5V Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Coil Voltage: 4.5VDC Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Relay Type: Telecom Coil Current: 31 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 0.45 VDC Must Operate Voltage: 3.38 VDC Operate Time: 3 ms Release Time: 3 ms Part Status: Active Approval Agency: UR Load - Max Switching: 500VA, 440W | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB02ITS | TE Connectivity / Axicom | Low Signal Relays - PCB IMB02ITS =IM Relay 140 mW 4,5V | auf Bestellung 556 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB02ITS | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 4.5V Packaging: Tube Mounting Type: Through Hole Coil Voltage: 4.5VDC Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Approval Agency: UR Relay Type: Telecom Coil Current: 31 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 0.45 VDC Must Operate Voltage: 3.38 VDC Operate Time: 3 ms Release Time: 3 ms Load - Max Switching: 500VA, 440W | auf Bestellung 988 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB03CGR | TE Connectivity | Signal Relay 5VDC 2A SPST-NO(10x7.5x5.65)mm SMD | Produkt ist nicht verfügbar | |||||||||||||||||
IMB03CGR | AXICOM - TE CONNECTIVITY | Description: AXICOM - TE CONNECTIVITY - IMB03CGR - Signalrelais, 5 VDC, SPST-NO, 2 A, IM, Oberflächenmontage, Monostabil tariffCode: 85364110 rohsCompliant: YES Relaisanschlüsse: Lötanschlüsse hazardous: false rohsPhthalatesCompliant: YES Spulentyp: Monostabil Kontaktmaterial: Palladium-Ruthenium Kontaktstrom: 2A usEccn: EAR99 Spulenwiderstand: 178ohm euEccn: NLR Kontaktspannung V DC: 220V Relaismontage: Oberflächenmontage Produktpalette: IM productTraceability: Yes-Date/Lot Code Spulenspannung: 5VDC Kontaktkonfiguration: SPST-NO Kontaktspannung V AC: 250V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1570 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB03CGR | TE Connectivity | Signal Relay 5VDC 2A SPST-NO(10x7.5x5.65)mm SMD | auf Bestellung 3400 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB03CGR | TE Connectivity | Signal Relay 5VDC 2A SPST-NO(10x7.5x5.65)mm SMD | Produkt ist nicht verfügbar | |||||||||||||||||
IMB03CGR Produktcode: 200311 | Relais | Produkt ist nicht verfügbar | ||||||||||||||||||
IMB03CGR | TE Connectivity | High Frequency / RF Relays RELAY TELECOM 5VDC SPST-NO SMD | auf Bestellung 1486 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB03CGR | TE Connectivity | Signal Relay 5VDC 2A SPST-NO(10x7.5x5.65)mm SMD | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB03CGR | AXICOM - TE CONNECTIVITY | Description: AXICOM - TE CONNECTIVITY - IMB03CGR - Signalrelais, 5 VDC, SPST-NO, 2 A, IM, Oberflächenmontage, Monostabil tariffCode: 85364110 rohsCompliant: YES Relaisanschlüsse: Lötanschlüsse hazardous: false rohsPhthalatesCompliant: YES Spulentyp: Monostabil Kontaktmaterial: Palladium-Ruthenium Kontaktstrom: 2A usEccn: EAR99 Spulenwiderstand: 178ohm euEccn: NLR Kontaktspannung V DC: 220V Relaismontage: Oberflächenmontage Produktpalette: IM productTraceability: Yes-Date/Lot Code Spulenspannung: 5VDC Kontaktkonfiguration: SPST-NO Kontaktspannung V AC: 250V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1564 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB03CGR | TE Connectivity | Signal Relay 5VDC 2A SPST-NO( (10mm 7.5mm 5.65mm)) SMD | Produkt ist nicht verfügbar | |||||||||||||||||
IMB03CTS Produktcode: 191933 | Relais | Produkt ist nicht verfügbar | ||||||||||||||||||
IMB03CTS | TE Connectivity / P&B | High Frequency / RF Relays RELAY TELECOM 5VDC SPST-NO T/H | auf Bestellung 5339 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB03CTS | AXICOM - TE CONNECTIVITY | Description: AXICOM - TE CONNECTIVITY - IMB03CTS - Signalrelais, 5 VDC, SPST-NO, 2 A, IM, Durchsteckmontage, Monostabil tariffCode: 85364110 rohsCompliant: YES Relaisanschlüsse: Lötanschlüsse hazardous: false rohsPhthalatesCompliant: YES Spulentyp: Monostabil Kontaktmaterial: Palladium-Ruthenium Kontaktstrom: 2A usEccn: EAR99 Spulenwiderstand: 178ohm euEccn: NLR Kontaktspannung V DC: 220V Relaismontage: Durchsteckmontage Produktpalette: IM productTraceability: No Spulenspannung: 5VDC Kontaktkonfiguration: SPST-NO Kontaktspannung V AC: 250V SVHC: No SVHC (17-Dec-2014) | auf Bestellung 445 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB03CTS | TE Connectivity | Signal Relay 5VDC 2A SPST-NO(254x152.4x137.16)mm THT Automotive | auf Bestellung 8867 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB03IGR | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 5V Packaging: Cut Tape (CT) Mounting Type: Surface Mount Coil Voltage: 5VDC Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Approval Agency: UR Relay Type: Telecom Coil Current: 28.1 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 0.5 VDC Must Operate Voltage: 3.75 VDC Operate Time: 3 ms Release Time: 3 ms Part Status: Active Load - Max Switching: 500VA, 440W | auf Bestellung 1877 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB03IGR | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 5V Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Coil Voltage: 5VDC Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Approval Agency: UR Relay Type: Telecom Coil Current: 28.1 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 0.5 VDC Must Operate Voltage: 3.75 VDC Operate Time: 3 ms Release Time: 3 ms Part Status: Active Load - Max Switching: 500VA, 440W | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB03IGR | TE Connectivity / Axicom | Low Signal Relays - PCB IMB03IGR =IM Relay 140 mW 5V | auf Bestellung 378 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB03ITS | TE Connectivity / Axicom | Low Signal Relays - PCB IMB03ITS =IM Relay 140 mW 5V | auf Bestellung 898 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB03ITS | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 5V Packaging: Tube Mounting Type: Through Hole Coil Voltage: 5VDC Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Approval Agency: UR Relay Type: Telecom Coil Current: 28.1 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 0.5 VDC Must Operate Voltage: 3.75 VDC Operate Time: 3 ms Release Time: 3 ms Load - Max Switching: 500VA, 440W | auf Bestellung 913 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB06CGR | TE Connectivity | Signal Relay 12VDC 2A SPST-NO( (10mm 7.5mm 5.65mm)) SMD | Produkt ist nicht verfügbar | |||||||||||||||||
IMB06CGR | TE Connectivity | Signal Relay 12VDC 2A SPST-NO(10x7.5x5.65)mm SMD | Produkt ist nicht verfügbar | |||||||||||||||||
IMB06CGR | AXICOM - TE CONNECTIVITY | Description: AXICOM - TE CONNECTIVITY - IMB06CGR - Signalrelais, 12 VDC, SPST-NO, 2 A, IM, Oberflächenmontage, Monostabil tariffCode: 85364110 rohsCompliant: YES Relaisanschlüsse: Lötanschlüsse hazardous: false rohsPhthalatesCompliant: YES Spulentyp: Monostabil Kontaktmaterial: Palladium-Ruthenium Kontaktstrom: 2A usEccn: EAR99 Spulenwiderstand: 1.029kohm euEccn: NLR Kontaktspannung V DC: 220V Relaismontage: Oberflächenmontage Produktpalette: IM productTraceability: No Spulenspannung: 12VDC Kontaktkonfiguration: SPST-NO Kontaktspannung V AC: 250V SVHC: No SVHC (14-Jun-2023) | auf Bestellung 10568 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB06CGR | TE Connectivity / P&B | High Frequency / RF Relays RELAY TELECOM 12VDC SPST-NO SMD | auf Bestellung 1942 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB06CGR | AXICOM - TE CONNECTIVITY | Description: AXICOM - TE CONNECTIVITY - IMB06CGR - Signalrelais, 12 VDC, SPST-NO, 2 A, IM, Oberflächenmontage, Monostabil tariffCode: 85364110 rohsCompliant: YES Relaisanschlüsse: Lötanschlüsse hazardous: false rohsPhthalatesCompliant: YES Spulentyp: Monostabil Kontaktmaterial: Palladium-Ruthenium Kontaktstrom: 2A usEccn: EAR99 Spulenwiderstand: 1.029kohm euEccn: NLR Kontaktspannung V DC: 220V Relaismontage: Oberflächenmontage Produktpalette: IM productTraceability: No Spulenspannung: 12VDC Kontaktkonfiguration: SPST-NO Kontaktspannung V AC: 250V SVHC: No SVHC (14-Jun-2023) | auf Bestellung 10568 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB06CGR | TE Connectivity / Axicom | High Frequency / RF Relays RELAY TELECOM 12VDC SPST-NO SMD | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB06CGR | TE Connectivity | Signal Relay 12VDC 2A SPST-NO(10x7.5x5.65)mm SMD | Produkt ist nicht verfügbar | |||||||||||||||||
IMB06CTS | AXICOM - TE CONNECTIVITY | Description: AXICOM - TE CONNECTIVITY - IMB06CTS - Signalrelais, 12 VDC, SPST-NO, 2 A, IM-B, Durchsteckmontage, Monostabil tariffCode: 85364110 rohsCompliant: YES Relaisanschlüsse: PC-Pin hazardous: false rohsPhthalatesCompliant: YES Spulentyp: Monostabil Kontaktmaterial: Palladium-Ruthenium Kontaktstrom: 2A usEccn: EAR99 Spulenwiderstand: 1.029kohm euEccn: NLR Kontaktspannung V DC: 220V Relaismontage: Durchsteckmontage Produktpalette: IM-B productTraceability: No Spulenspannung: 12VDC Kontaktkonfiguration: SPST-NO Kontaktspannung V AC: 250V SVHC: No SVHC (17-Jan-2023) | auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB06CTS | TE Connectivity / Axicom | High Frequency / RF Relays RELAY TELECOM 12VDC SPST-NO T/H | auf Bestellung 1214 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB06IGR | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 12V Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Coil Voltage: 12VDC Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Approval Agency: UR Relay Type: Telecom Coil Current: 11.7 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 1.2 VDC Must Operate Voltage: 9 VDC Operate Time: 3 ms Release Time: 3 ms Part Status: Active Load - Max Switching: 500VA, 440W | Produkt ist nicht verfügbar | |||||||||||||||||
IMB06IGR | TE Connectivity / Axicom | Low Signal Relays - PCB IMB06IGR =IM Relay 140 mW 12V | auf Bestellung 233 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB06IGR | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 12V Packaging: Cut Tape (CT) Mounting Type: Surface Mount Coil Voltage: 12VDC Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Relay Type: Telecom Coil Current: 11.7 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 1.2 VDC Must Operate Voltage: 9 VDC Operate Time: 3 ms Release Time: 3 ms Part Status: Active Approval Agency: UR Load - Max Switching: 500VA, 440W | Produkt ist nicht verfügbar | |||||||||||||||||
IMB06ITS | TE Connectivity / Axicom | Low Signal Relays - PCB IMB06ITS =IM Relay 140 mW 12V | auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB06ITS | TE Connectivity Potter & Brumfield Relays | Description: RELAY TELECOM SPST 2A 12V Packaging: Tube Mounting Type: Through Hole Coil Voltage: 12VDC Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Relay Type: Telecom Coil Current: 11.7 mA Coil Type: Non Latching Seal Rating: Sealed - Hermetically Contact Material: Silver Nickel (AgNi), Gold (Au) Contact Form: SPST-NO (1 Form A) Contact Rating (Current): 2 A Switching Voltage: 400VDC - Max Must Release Voltage: 1.2 VDC Must Operate Voltage: 9 VDC Operate Time: 3 ms Release Time: 3 ms Part Status: Active Approval Agency: UR Load - Max Switching: 500VA, 440W | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: 2-wire NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: 2-wire NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: 2-wire NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: 2-wire NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: 2-wire NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: 2-wire NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 2MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: 2-wire NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: 2-wire NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVU2S | SICK, Inc. | Description: SENSOR PROX INDUC 2MM CYL 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BDSVU5K | SICK, Inc. | Description: INDUCT PROXIM SENS Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: NO, 2-Wire Sensing Distance: 0.079" (2mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: LED | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNOVT0K | SICK, Inc. | Description: SEN PROX SHLD NPN NC M8 SHRT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNOVT0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 2MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: NPN-NC, 3-Wire Sensing Distance: 0.079" (2mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 4kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 2MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 2MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNPVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO + NC; 0÷2mm; 10÷30VDC; M8; IP68 Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO + NC Connection: connector M12 Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNPVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO + NC; 0÷2mm; 10÷30VDC; M8; IP68 Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO + NC Connection: connector M12 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNSVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: connector M12 Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNSVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: connector M12 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB08-02BNSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB08-02BNSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BNSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB08-02BNSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: NPN / NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB08-02BNSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 2MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPOVT0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 2MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: PNP-NC, 3-Wire Sensing Distance: 0.079" (2mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 4kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPPVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 2MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPPVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO + NC; 0÷2mm; 10÷30VDC; M8; IP68 Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO + NC Connection: connector M12 Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPPVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO + NC; 0÷2mm; 10÷30VDC; M8; IP68 Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO + NC Connection: connector M12 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: connector M12 Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: connector M12 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 2MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.079" (2mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 4kHz Part Status: Active | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB08-02BPSVR8K | SICK, Inc. | Description: INDUCT PROXIM SENS Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.079" (2mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: LED | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVT0K | SICK, Inc. | Description: SENSOR PROX INDUCT 2MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.079" (2mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 4kHz Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB08-02BPSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB08-02BPSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB08-02BPSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: connector M8 Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVT0S | SICK, Inc. | Description: SENSOR PROX INDUCT 2MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.079" (2mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 4kHz Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB08-02BPSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCT 2MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.079" (2mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 4kHz Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB08-02BPSVU2K | SICK | Description: SICK - IMB08-02BPSVU2K - Näherungssensor, induktiv, 2mm, PNP, M8 x 1, 10 bis 30V DC, Produktreihe IMB tariffCode: 90318080 Erfassungsreichweite, max.: 2mm productTraceability: No rohsCompliant: YES Gewindemaß - Metrisch: M8 x 1 euEccn: NLR DC-Versorgungsspannung, min.: 10V hazardous: false rohsPhthalatesCompliant: YES Sensorausgang: PNP DC-Versorgungsspannung, max.: 30V usEccn: EAR99 Produktpalette: IMB Series SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB08-02BPSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷2mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...2mm Output configuration: PNP / NO Connection: lead 2m Kind of forehead: embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-02BPSVU5K | SICK, Inc. | Description: INDUCT PROXIM SENS Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.079" (2mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: LED | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NDSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: 2-wire NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NDSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: 2-wire NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NDSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: 2-wire NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NDSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: 2-wire NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NDSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: 2-wire NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NDSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NDSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: 2-wire NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: 2-wire NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNPVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO + NC; 0÷4mm; 10÷30VDC; M8; IP68 Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO + NC Connection: connector M12 Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNPVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO + NC; 0÷4mm; 10÷30VDC; M8; IP68 Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO + NC Connection: connector M12 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNPVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: connector M12 Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: connector M12 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NNSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: NPN / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: NPN / NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: PNP-NC, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 4kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPPVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO + NC; 0÷4mm; 10÷30VDC; M8; IP68 Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO + NC Connection: connector M12 Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPPVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO + NC; 0÷4mm; 10÷30VDC; M8; IP68 Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO + NC Connection: connector M12 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPSVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: connector M12 Kind of forehead: non-embedded Type of sensor: inductive | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB08-04NPSVC0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 4 IP rating: IP68 Overall length: 60mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: connector M12 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB08-04NPSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB08-04NPSVT0K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 40mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB08-04NPSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPSVT0S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC Number of pins: 3 IP rating: IP68 Overall length: 50mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: connector M8 Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPSVU2K | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 32mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive | Produkt ist nicht verfügbar | |||||||||||||||||
IMB08-04NPSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IMB08-04NPSVU2S | SICK | Category: DC Cylindrical Inductive Sensors Description: Sensor: inductive; OUT: PNP / NO; 0÷4mm; 10÷30VDC; M8; IP68; 200mA Operating temperature: -40...100°C Body material: stainless steel Supply voltage: 10...30V DC IP rating: IP68 Overall length: 45mm Max. operating current: 0.2A Switching frequency max: 4kHz Switch housing: M8 Range: 0...4mm Output configuration: PNP / NO Connection: lead 2m Kind of forehead: non-embedded Type of sensor: inductive Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB08-1B5PSVU3SS09 | SICK, Inc. | Description: INDUCT PROXIM SENS Packaging: Bulk Package / Case: Cylinder, Threaded - M8 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.059" (1.5mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: LED | Produkt ist nicht verfügbar | |||||||||||||||||
IMB1 | ROHM | auf Bestellung 8900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB1 T110 | ROHM | SOT163-B1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB1 T110 SOT163-B1 | ROHM | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB1 T110 SOT163-B1 | ROHM | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB1/B1 | ROHM | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB10 | ROHM | SOT-163 | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB10AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMT6 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB10AT110 | ROHM SEMICONDUCTOR | IMB10AT110 PNP SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB10AT110 | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB10AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMT6 Part Status: Active | auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB10AT110 | ROHM Semiconductor | Digital Transistors DUAL PNP 50V 100MA SOT-457 | auf Bestellung 3000 Stücke: Lieferzeit 144-148 Tag (e) |
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IMB10T110 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB11 | ROHM | SOT-163 | auf Bestellung 1130 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB11A T110 | ROHM | SOT23 | auf Bestellung 26 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB11A/B11 | ROHM | 09+ | auf Bestellung 1868 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB11AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMT6 Part Status: Active | auf Bestellung 4150 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB11AT110 | ROHM SEMICONDUCTOR | IMB11AT110 PNP SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB11AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMT6 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB11AT110 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DUAL PNP 50V 50MA SOT-457 | auf Bestellung 5437 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB12-04BDSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BDSVC0S | SICK | IMB12-04BDSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BDSVU2K | SICK | IMB12-04BDSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BDSVU2S | SICK | IMB12-04BDSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BDSVU2S | SICK, Inc. | Description: SENSOR PROX INDUC 4MM CYL 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNOVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: NPN-NC, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 2kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYL 2M Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: NPN-NC, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 2kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNPVC0K | SICK | IMB12-04BNPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNPVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNPVC0S | SICK | Description: SICK - IMB12-04BNPVC0S - Induktiver Näherungssensor, 4mm, komplementärer NPN, M12 x 1, 10-30V DC, Produktreihe IMB tariffCode: 85439000 Erfassungsreichweite, max.: 4mm productTraceability: No rohsCompliant: YES Gewindemaß - Metrisch: M12 x 1 euEccn: NLR DC-Versorgungsspannung, min.: 10V hazardous: false rohsPhthalatesCompliant: YES Sensorausgang: NPN, komplementär DC-Versorgungsspannung, max.: 30V usEccn: EAR99 Produktpalette: IMB Series SVHC: No SVHC (17-Jan-2022) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB12-04BNPVC0S | SICK | IMB12-04BNPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNSVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: NPN-NO, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 2kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNSVC0K | SICK | IMB12-04BNSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 4MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: NPN-NO, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 2kHz Part Status: Active | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB12-04BNSVC0S | SICK | IMB12-04BNSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNSVU2K | SICK | IMB12-04BNSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYL 2M Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: NPN-NO, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 2kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BNSVU2S | SICK | IMB12-04BNSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPOVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: PNP-NC, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 2kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPPVC0K | SICK | IMB12-04BPPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPPVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPPVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPPVC0S | SICK | Description: SICK - IMB12-04BPPVC0S - Induktiver Näherungssensor, Baureihe IMB, 4mm, PNP, M12, Steckverbinder, 10 bis 30V DC tariffCode: 90318080 Erfassungsreichweite, max.: 4mm productTraceability: No rohsCompliant: YES Gewindemaß - Metrisch: M12 x 1 euEccn: NLR DC-Versorgungsspannung, min.: 10VDC hazardous: false rohsPhthalatesCompliant: YES Sensorausgang: PNP DC-Versorgungsspannung, max.: 30VDC usEccn: EAR99 Produktpalette: IMB Series SVHC: No SVHC (17-Jan-2022) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB12-04BPPVC0S | SICK | IMB12-04BPPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPSVC0K | SICK | Description: SICK - IMB12-04BPSVC0K - Näherungssensor, induktiv, 4mm, PNP, M12 x 1, 10 bis 30V DC, Produktreihe IMB tariffCode: 85365019 Erfassungsreichweite, max.: 4mm productTraceability: No rohsCompliant: YES Gewindemaß - Metrisch: M12 x 1 euEccn: NLR DC-Versorgungsspannung, min.: 10V hazardous: false rohsPhthalatesCompliant: YES Sensorausgang: PNP DC-Versorgungsspannung, max.: 30V usEccn: EAR99 Produktpalette: IMB Series SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB12-04BPSVC0K | SICK | IMB12-04BPSVC0K DC Cylindrical Inductive Sensors | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB12-04BPSVC0K | SICK, Inc. | Description: SENSOR PROX INDUCT 4MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 2kHz Part Status: Active | auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB12-04BPSVC0S | SICK | IMB12-04BPSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 4MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 2kHz Part Status: Active | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB12-04BPSVC0S | SICK | Description: SICK - IMB12-04BPSVC0S - Näherungssensor, induktiv, 4mm, PNP, M12 x 1, 10 bis 30V DC, Produktreihe IMB tariffCode: 85365019 Erfassungsreichweite, max.: 4mm productTraceability: No rohsCompliant: YES Gewindemaß - Metrisch: M12 x 1 euEccn: NLR DC-Versorgungsspannung, min.: 10V hazardous: false rohsPhthalatesCompliant: YES Sensorausgang: PNP DC-Versorgungsspannung, max.: 30V usEccn: EAR99 Produktpalette: IMB Series SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB12-04BPSVU2K | SICK | IMB12-04BPSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-04BPSVU2S | SICK | IMB12-04BPSVU2S DC Cylindrical Inductive Sensors | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB12-04BPSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 4MM CYL 2M Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.157" (4mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 2kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NDSVC0S | SICK | IMB12-08NDSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NDSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCT 8MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Sensing Distance: 0.315" (8mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 2kHz | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB12-08NDSVU2K | SICK | IMB12-08NDSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NDSVU2S | SICK | IMB12-08NDSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNPVC0K | SICK | IMB12-08NNPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNPVC0S | SICK | IMB12-08NNPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNPVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNSVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNSVC0K | SICK | IMB12-08NNSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNSVC0S | SICK | IMB12-08NNSVC0S DC Cylindrical Inductive Sensors | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB12-08NNSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNSVU2K | SICK | IMB12-08NNSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNSVU2S | SICK | IMB12-08NNSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NNSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: PNP-NC, 3-Wire Sensing Distance: 0.315" (8mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 2kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPPVC0K | SICK | IMB12-08NPPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPPVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPPVC0S | SICK | Description: SICK - IMB12-08NPPVC0S - Induktiver Näherungssensor, Baureihe IMB, 8mm, PNP, M12, Steckverbinder, 10 bis 30V DC tariffCode: 90318080 Erfassungsreichweite, max.: 8mm productTraceability: No rohsCompliant: YES Gewindemaß - Metrisch: M12 x 1 euEccn: NLR DC-Versorgungsspannung, min.: 10VDC hazardous: false rohsPhthalatesCompliant: YES Sensorausgang: PNP DC-Versorgungsspannung, max.: 30VDC usEccn: EAR99 Produktpalette: IMB Series SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB12-08NPPVC0S | SICK | IMB12-08NPPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPSVC0K | SICK, Inc. | Description: SENSOR PROX INDUCT 8MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.315" (8mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 2kHz Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB12-08NPSVC0K | SICK | IMB12-08NPSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 8MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M12 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.315" (8mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 2kHz Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB12-08NPSVC0S | SICK | IMB12-08NPSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPSVU2K | SICK | Description: SICK - IMB12-08NPSVU2K - Näherungssensor, induktiv, 8mm, PNP, M12 x 1, 10 bis 30V DC, Produktreihe IMB tariffCode: 85365019 Erfassungsreichweite, max.: 8mm productTraceability: No rohsCompliant: YES Gewindemaß - Metrisch: M12 x 1 euEccn: NLR DC-Versorgungsspannung, min.: 10V hazardous: false rohsPhthalatesCompliant: YES Sensorausgang: PNP DC-Versorgungsspannung, max.: 30V usEccn: EAR99 Produktpalette: IMB Series SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB12-08NPSVU2K | SICK, Inc. | Description: SEN PROX UNSHLD PNP NO 2M SHRT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPSVU2K | SICK | IMB12-08NPSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB12-08NPSVU2S | SICK | IMB12-08NPSVU2S DC Cylindrical Inductive Sensors | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB12-140 | FUJI | auf Bestellung 303 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB12A188SPTC8M01TRH | Amphenol | Array | Produkt ist nicht verfügbar | |||||||||||||||||
IMB14 | ROHM | auf Bestellung 2950 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB16T110 | auf Bestellung 219000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB18-08BDSVC0S | SICK | IMB18-08BDSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BDSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: NO, 2-Wire Sensing Distance: 0.315" (8mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: LED Response Frequency: 1kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BDSVU2K | SICK | IMB18-08BDSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BDSVU2S | SICK, Inc. | Description: SENSOR PROX INDUC 8MM CYL 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BDSVU2S | SICK | IMB18-08BDSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNOVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: NPN-NC, 3-Wire Sensing Distance: 0.315" (8mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 1kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNPVC0K | SICK | IMB18-08BNPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNPVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNPVC0S | SICK | IMB18-08BNPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNPVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNSVC0K | SICK | IMB18-08BNSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNSVC0S | SICK | IMB18-08BNSVC0S DC Cylindrical Inductive Sensors | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB18-08BNSVU2K | SICK | IMB18-08BNSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNSVU2S | SICK | IMB18-08BNSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BNSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPOVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: PNP-NC, 3-Wire Sensing Distance: 0.315" (8mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 1kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPPVC0K | SICK | IMB18-08BPPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPPVC0S | SICK | IMB18-08BPPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPPVC0S | SICK | Description: SICK - IMB18-08BPPVC0S - Induktiver Näherungssensor, Baureihe IMB, 8mm, PNP, M18, Steckverbinder, 10 bis 30V DC tariffCode: 90318080 Erfassungsreichweite, max.: 8mm productTraceability: No rohsCompliant: YES euEccn: NLR DC-Versorgungsspannung, min.: 10VDC hazardous: false rohsPhthalatesCompliant: YES DC-Versorgungsspannung, max.: 30VDC usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPPVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: PNP-NC/NO, 4-Wire Sensing Distance: 0.315" (8mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: LED Response Frequency: 1kHz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPSVC0K | SICK | IMB18-08BPSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPSVC0K | SICK, Inc. | Description: SENSOR PROX INDUCT 8MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.315" (8mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 1kHz Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB18-08BPSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 8MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.315" (8mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 1kHz Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB18-08BPSVC0S | SICK | IMB18-08BPSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPSVU2K | SICK | IMB18-08BPSVU2K DC Cylindrical Inductive Sensors | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB18-08BPSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 8MM CYLIND | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-08BPSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCT 8MM IP69K CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.315" (8mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 1kHz Part Status: Active | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB18-08BPSVU2S | SICK | IMB18-08BPSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NDSVU2K | SICK | IMB18-12NDSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NDSVU2S | SICK | IMB18-12NDSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NNOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 12MM CYL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NNOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 12MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NNPVC0K | SICK | IMB18-12NNPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NNPVC0S | SICK | IMB18-12NNPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NNSVC0K | SICK | IMB18-12NNSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NNSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 12MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: NPN-NO, 3-Wire Sensing Distance: 0.472" (12mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 1kHz Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB18-12NNSVC0S | SICK | IMB18-12NNSVC0S DC Cylindrical Inductive Sensors | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB18-12NNSVU2K | SICK | IMB18-12NNSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NNSVU2S | SICK | IMB18-12NNSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NNSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 12MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPOVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 12MM CYL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPOVC0K | SICK | Description: SICK - IMB18-12NPOVC0K - Induktiver Näherungssensor, PNP/SPST-NC, 12mm, M18 x 1, 10V bis 30V, Produktreihe IMB tariffCode: 85439000 Erfassungsreichweite, max.: 12mm productTraceability: No rohsCompliant: YES Gewindemaß - Metrisch: M18 x 1 euEccn: NLR DC-Versorgungsspannung, min.: 10V hazardous: false rohsPhthalatesCompliant: YES Sensorausgang: PNP / SPST-NC DC-Versorgungsspannung, max.: 30V usEccn: EAR99 Produktpalette: IMB Series SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB18-12NPOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 12MM CYL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 12MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPPVC0K | SICK | IMB18-12NPPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPPVC0S | SICK | IMB18-12NPPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPSVC0K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 12MM CYL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPSVC0K | SICK | IMB18-12NPSVC0K DC Cylindrical Inductive Sensors | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB18-12NPSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 12MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M18 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.472" (12mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 1kHz Part Status: Active | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB18-12NPSVC0S | SICK | IMB18-12NPSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPSVU2K | SICK | IMB18-12NPSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB18-12NPSVU2S | SICK | IMB18-12NPSVU2S DC Cylindrical Inductive Sensors | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB18-12NPSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 12MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB1805C5 | Crouzet Switches | Description: M18 ANALOG PROXIMITY M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB1805C5 | Crouzet Switches | Proximity Sensors M18 ANALOG PROXIMTY M12 QC0NN | Produkt ist nicht verfügbar | |||||||||||||||||
IMB1805T | Crouzet | Description: SENSOR PROX INDUCTIVE 5MM CYLIND | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB1805T | Crouzet | Proximity Sensors M18 ANALOG PROXIMITY 2 M | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB1805T | CROUZET | IMB1805T-CRO DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB1805T | CROUZET | Description: CROUZET - IMB1805T - INDUCTIVE PROXIMITY DETECTOR, 5MM, 12V TO 24V tariffCode: 85339000 Erfassungsreichweite, max.: 5mm productTraceability: No rohsCompliant: NO Gewindemaß - Metrisch: M18 euEccn: NLR DC-Versorgungsspannung, min.: 12V hazardous: false rohsPhthalatesCompliant: TBA directShipCharge: 25 Sensorausgang: Voltage DC-Versorgungsspannung, max.: 24V usEccn: EAR99 Produktpalette: - SVHC: No SVHC (10-Jun-2022) | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMB1A | ROHM | SOT-163 | auf Bestellung 2080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB1A | ROHM | 09+ | auf Bestellung 9018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB1AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB1AT110 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA | Produkt ist nicht verfügbar | |||||||||||||||||
IMB1AT110 | ROHM | 96+/00 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB1T110SOT163-B1 | ROHM | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB204 | Axiomtek | Single Board Computers LGA1155 Socket 3rd/2nd Intel Core i7/ i5/ i3/Celeron Intel B75 PCH DDR3 USB 3.0 SATA3 Dual GE LPT 6 COM VGA/DVI-D HD Audio 1 PCIex16 1 PCIex4 1 PCIex1 4 PCI w/driver CD | Produkt ist nicht verfügbar | |||||||||||||||||
IMB204VGGA | Axiomtek | Single Board Computers ATX IND MOTHERBOARD LGA1155 SOCKET B75 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB206DGGA | Axiomtek | Single Board Computers LGA1155 Socket 3rd/2nd Intel Core i7/ i5/ i3 Intel Q67 PCH DDR3 USB 3.0 SATA3 Dual GE RAID CFast 4 COM 2 DisplayPort/DVI-I HD Audio 1 PCIex16 1 PCIex4 2 PCIex1 3 PCI | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB206DGGA-RC LGA1155 Socket | Axiomtek | Axiomtek LGA1155 Socket 3rd/2nd Intel Core i7/ i5/ i3 Intel Q67 PCH DDR3 USB 3.0 SATA3 Dual GE RAID CFast 4 COM 2 DisplayPort/DVI-I HD Audio 1 PCIex16 1 PCIex4 2 PCIex1 3 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB207DGGA | Axiomtek | Single Board Computers ATX IND MOTHERBOARD LGA1155 SOCKET Q77 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB207DGGA LGA1155 socket | Axiomtek | Axiomtek LGA1155 Socket Intel Core i7/ i5/ i3/ Celeron Intel Q77 PCH DDR3 USB 3.0 SATA3 Dual GE RAID CFast 4 COM 2 DisplayPort/DVI-I HD Audio 1 PCIex16 1 PCIex4 2 PCIex1 3 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB208DGGA | Axiomtek | Single Board Computers ATX IND MOTHERBOARD LGA1155 SOCKET C216 | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB208DGGA LGA1155 socket | Axiomtek | Axiomtek LGA1155 Socket 3rd/2nd Intel Xeon / Core i7/ i5/ i3 Intel C216 PCH DDR3 USB 3.0 SATA3 Dual GE RAID TPM CFast 4 COM 2 DisplayPort/DVI-I HDAudio 1 PCIex16 1 PCIex4 2 PCIex1 3 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB210VGGA | Axiomtek | Single Board Computers LGA1150 Socket 4th Intel Xeon / Core i7/ i5/ i3 Intel C226 PCH ECC DDR3 USB 3.0 SATA3 Dual GE mSATA RAID TPM CFast 6 COM DisplayPort/DVI-I/HDMI HDAudio 1 PCIex16 (or 2 PCIex8) 1 PCIex4 1 PCIex1 3 PCI | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB211VGGA | Axiomtek | Single Board Computers LGA1150 Socket 4th Gen Intel Core i7/ i5/ i3/ Celeron Intel Q87 PCH DDR3 USB 3.0 SATA3 Dual GE mSATA 6 COM DisplayPort/VGA/HDMI HDAudio 1 PCIex16 1 PCIex4 1 PCIex1 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB226515C | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W NPN NO 2M CB | Produkt ist nicht verfügbar | |||||||||||||||||
IMB226515C | Crouzet Switches | Description: IPD SHLD 3W SPST 2.0MTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB226515M12 | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W NPN NO M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB226515M12 | Crouzet Switches | Description: IPD 6.5-1.5MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB226515M8 | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W NPN NOM8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB226515M8 | Crouzet Switches | Description: IPD 6.5-1.5MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22651C | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W NPN NO 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22651C | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22651M12 | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22651M12 | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W NPN NOM12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22651M8 | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W NPN NOM8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22651M8 | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22652C | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W NPN NO 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22652C | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22652M12 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W NPN NO M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22652M12 | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22652M8 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W NPN NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22652M8 | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22653C | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W NPN NO 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22653C | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22653M12 | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W NPN NO M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22653M12 | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22653M8 | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W NPN NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB22653M8 | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB236515C | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W NPN NC 2M CB | Produkt ist nicht verfügbar | |||||||||||||||||
IMB236515C | Crouzet Switches | Description: IPD 6.5-1.5MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB236515M12 | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W NPN NC M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB236515M12 | Crouzet Switches | Description: IPD 6.5-1.5MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB236515M8 | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W NPN NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB236515M8 | Crouzet Switches | Description: IPD 6.5-1.5MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23651C | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W NPN NC 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23651C | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23651M12 | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W NPN NC M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23651M12 | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23651M8 | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W NPN NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23651M8 | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23652C | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W NPN NC 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23652C | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23652M12 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W NPN NC M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23652M12 | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23652M8 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W NPN NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23652M8 | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23653C | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W NPN NC 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23653C | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23653M12 | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W NPN NC M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23653M12 | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23653M8 | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W NPN NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB23653M8 | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25652C | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W NPN NO 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25652C | Crouzet | Description: SENSOR PROX INDUCTIVE 2MM 2M Packaging: Box Sensing Distance: 0.079" (2mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25652M12 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W NPN NO M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25652M12 | Crouzet | Description: SENSOR PROX INDUCTIVE 2MM Packaging: Box Sensing Distance: 0.079" (2mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25652M8 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W NPN NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25652M8 | Crouzet | Description: SENSOR PROX INDUCTIVE 2MM Packaging: Box Sensing Distance: 0.079" (2mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25654C | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W NPN NO 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25654C | Crouzet | Description: SENSOR PROX INDUCTIVE 4MM 2M Packaging: Box Sensing Distance: 0.157" (4mm) Termination Style: Cable Leads Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25654M12 | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W NPN NO M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25654M12 | Crouzet | Description: SENSOR PROX INDUCTIVE 4MM Packaging: Box Sensing Distance: 0.157" (4mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25654M8 | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W NPN NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25654M8 | Crouzet | Description: SENSOR PROX INDUCTIVE 4MM Packaging: Box Sensing Distance: 0.157" (4mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25656C | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W NPN NO 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25656C | Crouzet | Description: SENSOR PROX INDUCTIVE 6MM 2M Packaging: Box Sensing Distance: 0.236" (6mm) Termination Style: Cable Leads Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25656M12 | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W NPN NO M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25656M12 | Crouzet | Description: SENSOR PROX INDUCTIVE 6MM Packaging: Box Sensing Distance: 0.236" (6mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25656M8 | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W NPN NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB25656M8 | Crouzet | Description: SENSOR PROX INDUCTIVE 6MM Packaging: Box Sensing Distance: 0.236" (6mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26652C | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W NPN NC 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26652C | Crouzet Switches | Description: IPD 6.5-2MM NONSHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26652M12 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W NPN NC M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26652M12 | Crouzet Switches | Description: IPD 6.5-2MM NONSHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26652M8 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W NPN NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26652M8 | Crouzet Switches | Description: IPD 6.5-2MM NONSHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26654C | Crouzet Switches | Description: IPD 6.5-4MM NONSHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26654C | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W NPN NC 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26654M12 | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W NPN NC M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26654M12 | Crouzet Switches | Description: IPD 6.5-4MM NONSHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26654M8 | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W NPN NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26654M8 | Crouzet Switches | Description: IPD 6.5-4MM NONSHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26656C | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W NPN NC 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26656C | Crouzet Switches | Description: IPD 6.5-6MM NONSHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26656M12 | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W NPN NC M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26656M12 | Crouzet Switches | Description: IPD 6.5-6MM NONSHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26656M8 | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W NPN NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB26656M8 | Crouzet Switches | Description: IPD 6.5-6MM NONSHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB2A | ROHM | SOT-163 | auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB2A | ROHM | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB2AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB2AT110 | ROHM SEMICONDUCTOR | IMB2AT110 PNP SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB2AT110 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DUAL PNP 50V 30MA | auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB2AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 | auf Bestellung 2685 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB2AT110 | ROHM | 96+ | auf Bestellung 2556 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB3 | ROHM | auf Bestellung 2857 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB30-15BDSVC0S | SICK | IMB30-15BDSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BDSVU2K | SICK | IMB30-15BDSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BDSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 15MM CYL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BDSVU2S | SICK | IMB30-15BDSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BNOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 15MM CYL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BNOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 15MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BNPVC0K | SICK | IMB30-15BNPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BNPVC0S | SICK | IMB30-15BNPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BNSVC0K | SICK | IMB30-15BNSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BNSVC0S | SICK | IMB30-15BNSVC0S DC Cylindrical Inductive Sensors | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB30-15BNSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 15MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: NPN-NO, 3-Wire Sensing Distance: 0.591" (15mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 500Hz Part Status: Active | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB30-15BNSVU2K | SICK | IMB30-15BNSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BNSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 15MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BNSVU2S | SICK | IMB30-15BNSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 15MM CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: PNP-NC, 3-Wire Sensing Distance: 0.591" (15mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 500Hz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 15MM CYL 2M Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: PNP-NC, 3-Wire Sensing Distance: 0.591" (15mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 500Hz Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPPVC0K | SICK | IMB30-15BPPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPPVC0S | SICK | IMB30-15BPPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPPVU2S | SICK | IMB30-15BPPVU2S DC Cylindrical Inductive Sensors | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB30-15BPPVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 15MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPSVC0K | SICK, Inc. | Description: SENSOR PROX INDUCT 15MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.591" (15mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 500Hz Part Status: Active | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB30-15BPSVC0K | SICK | IMB30-15BPSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCT 15MM CYLIND Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.591" (15mm) Shielding: Unshielded Operating Temperature: -40°C ~ 100°C Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Stainless Steel Sensor Type: Inductive Ingress Protection: IP69K Indicator: LED Response Frequency: 500Hz Part Status: Active | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB30-15BPSVC0S | SICK | IMB30-15BPSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPSVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 15MM CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.591" (15mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 500Hz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPSVU2K | SICK | IMB30-15BPSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 15MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-15BPSVU2S | SICK | IMB30-15BPSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NDSVC0S | SICK | IMB30-20NDSVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NDSVU2K | SICK | IMB30-20NDSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NDSVU2S | SICK | IMB30-20NDSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NDSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 20MM CYL 2M Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: NO, 2-Wire Sensing Distance: 0.787" (20mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Cable Leads Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 500Hz Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NNOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 20MM CYL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NNPVC0K | SICK | IMB30-20NNPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NNPVC0S | SICK | IMB30-20NNPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NNSVC0K | SICK | IMB30-20NNSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NNSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 20MM CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: NPN-NO, 3-Wire Sensing Distance: 0.787" (20mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 500Hz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NNSVC0S | SICK | IMB30-20NNSVC0S DC Cylindrical Inductive Sensors | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB30-20NNSVU2K | SICK | IMB30-20NNSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NNSVU2S | SICK | IMB30-20NNSVU2S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPOVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 20MM CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: PNP-NC, 3-Wire Sensing Distance: 0.787" (20mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 500Hz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPOVU2K | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 20MM CYL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPOVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 20MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPPVC0K | SICK | IMB30-20NPPVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPPVC0S | SICK | IMB30-20NPPVC0S DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPSVC0K | SICK | IMB30-20NPSVC0K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPSVC0S | SICK | IMB30-20NPSVC0S DC Cylindrical Inductive Sensors | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB30-20NPSVC0S | SICK, Inc. | Description: SENSOR PROX INDUCTIVE 20MM CYL Packaging: Bulk Package / Case: Cylinder, Threaded - M30 Output Type: PNP-NO, 3-Wire Sensing Distance: 0.787" (20mm) Shielding: Shielded Operating Temperature: -40°C ~ 100°C (TA) Termination Style: Connector Voltage - Supply: 10V ~ 30V Material - Body: Plastic Sensor Type: Inductive Ingress Protection: IP68, IP69K Indicator: No Indicator Response Frequency: 500Hz | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPSVU2K | SICK | IMB30-20NPSVU2K DC Cylindrical Inductive Sensors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPSVU2S | SICK, Inc. | Description: SENSOR PROX INDUCTIV 20MM CYL 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB30-20NPSVU2S | SICK | IMB30-20NPSVU2S DC Cylindrical Inductive Sensors | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IMB3180-08-FB-B-0-4. | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-08-FB-B-0-4.5 | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-10-FB-B-0-4. | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-10-FB-B-0-4.5 | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-12-FB-B-0-4. | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-12-FB-B-0-4.5 | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-14-FB-B-0-4. | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-14-FB-B-0-4.5 | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-18-FB-B-0-4. | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-18-FB-B-0-4.5 | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-22-FB-B-0-4. | Amphenol | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3180-22-FB-B-0-4.5 100 | Amphenol | Array | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3181-08-SD-G-06_3 | Amphenol | 84003814 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3181-14-A-V1 | Amphenol Pcd | Circular MIL Spec Tools, Hardware & Accessories 26482 D/C RECP SZ 14 BLK ANOD | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB3181-14-A-V1 | Amphenol PCD | Description: CONN BACKSHELL | auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB3181-14-SD-G-06-3 | Amphenol | IMB3181-14-SD-G-06-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB31T1101 | IMB | 98+ SOP | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB326515C | Crouzet | Description: SENSOR PROX INDUCTIVE 15MM 2M Packaging: Box Sensing Distance: 0.591" (15mm) Termination Style: Cable Leads Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB326515C | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W PNP NO 2M CB | Produkt ist nicht verfügbar | |||||||||||||||||
IMB326515M12 | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W PNP NO M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB326515M12 | Crouzet | Description: SENSOR PROX INDUCTIVE 15MM Packaging: Box Sensing Distance: 0.591" (15mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB326515M8 | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W PNP NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB326515M8 | Crouzet | Description: SENSOR PROX INDUCTIVE 15MM Packaging: Box Sensing Distance: 0.591" (15mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32651C | Crouzet | Description: SENSOR PROX INDUCTIVE 1MM 2M Packaging: Box Sensing Distance: 0.039" (1mm) Termination Style: Cable Leads Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32651C | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W PNP NO 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32651M12 | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W PNP NO M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32651M12 | Crouzet | Description: SENSOR PROX INDUCTIVE 1MM Packaging: Box Sensing Distance: 0.039" (1mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32651M8 | Crouzet | Description: SENSOR PROX INDUCTIVE 1MM Packaging: Box Sensing Distance: 0.039" (1mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32651M8 | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W PNP NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32652C | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W PNP NO 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32652C | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32652M12 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W PNP NO M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32652M12 | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32652M8 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W PNP NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32652M8 | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32653C | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W PNP NO 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32653C | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32653M12 | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32653M12 | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W PNP NO M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32653M8 | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W PNP NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB32653M8 | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB336515C | Crouzet Switches | Description: IPD 6.5-1.5MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB336515C | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W PNP NC 2M CB | Produkt ist nicht verfügbar | |||||||||||||||||
IMB336515M12 | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W PNP NC M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB336515M12 | Crouzet Switches | Description: IPD 6.5-1.5MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB336515M8 | Crouzet Switches | Proximity Sensors IPD 6.5 1.5MM SHLD 3W PNP NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB336515M8 | Crouzet Switches | Description: IPD 6.5-1.5MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33651C | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33651C | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W PNP NC 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33651M12 | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W PNP NC M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33651M12 | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33651M8 | Crouzet Switches | Description: IPD 6.5-1MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33651M8 | Crouzet Switches | Proximity Sensors IPD 6.5 1MM SHLD 3W PNP NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33652C | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W PNP NC 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33652C | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33652M12 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W PNP NC M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33652M12 | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33652M8 | Crouzet Switches | Description: IPD 6.5-2MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33652M8 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM SHLD 3W PNP NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33653C | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W PNP NC 2M CBL | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33653C | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33653M12 | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33653M12 | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W PNP NC M12 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33653M8 | Crouzet Switches | Proximity Sensors IPD 6.5 3MM SHLD 3W PNP NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB33653M8 | Crouzet Switches | Description: IPD 6.5-3MM SHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35652C | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W PNP NO 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35652C | Crouzet | Description: SENSOR PROX INDUCTIVE 2MM 2M Packaging: Box Sensing Distance: 0.079" (2mm) Termination Style: Cable Leads Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35652M12 | Crouzet | Description: SENSOR PROX INDUCTIVE 2MM Packaging: Box Sensing Distance: 0.079" (2mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35652M12 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W PNP NO M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35652M8 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W PNP NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35652M8 | Crouzet | Description: SENSOR PROX INDUCTIVE 2MM Packaging: Box Sensing Distance: 0.079" (2mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35654C | Crouzet | Description: SENSOR PROX INDUCTIVE 4MM 2M Packaging: Box Sensing Distance: 0.157" (4mm) Termination Style: Cable Leads Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35654C | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W PNP NO 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35654M12 | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W PNP NO M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35654M12 | Crouzet | Description: SENSOR PROX INDUCTIVE 4MM Packaging: Box Sensing Distance: 0.157" (4mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35654M8 | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W PNP NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35654M8 | Crouzet | Description: SENSOR PROX INDUCTIVE 4MM Packaging: Box Sensing Distance: 0.157" (4mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35656C | Crouzet | Description: SENSOR PROX INDUCTIVE 6MM 2M Packaging: Box Sensing Distance: 0.236" (6mm) Termination Style: Cable Leads Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35656C | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W PNP NO 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35656M12 | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W PNP NO M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35656M12 | Crouzet | Description: SENSOR PROX INDUCTIVE 6MM Packaging: Box Sensing Distance: 0.236" (6mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35656M8 | Crouzet | Description: SENSOR PROX INDUCTIVE 6MM Packaging: Box Sensing Distance: 0.236" (6mm) Termination Style: Connector Sensor Type: Inductive Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IMB35656M8 | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W PNP NO M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36652C | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W PNP NC 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36652C | Crouzet Switches | Description: IPD 6.5-2MM NONSHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36652M12 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W PNP NC M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36652M12 | Crouzet Switches | Description: IPD 6.5-2MM NONSHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36652M8 | Crouzet Switches | Description: IPD 6.5-2MM NONSHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36652M8 | Crouzet Switches | Proximity Sensors IPD 6.5 2MM NONSHLD 3W PNP NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36654C | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W PNP NC 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36654C | Crouzet Switches | Description: IPD 6.5-4MM NONSHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36654M12 | Crouzet Switches | Description: IPD 6.5-4MM NONSHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36654M12 | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W PNP NC M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36654M8 | Crouzet Switches | Proximity Sensors IPD 6.5 4MM NONSHLD 3W PNP NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36654M8 | Crouzet Switches | Description: IPD 6.5-4MM NONSHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36656C | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W PNP NC 2M C | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36656C | Crouzet Switches | Description: IPD 6.5-6MM NONSHLD 3W SPST 2M | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36656M12 | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W PNP NC M12 CNCT | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36656M12 | Crouzet Switches | Description: IPD 6.5-6MM NONSHLD 3W SPST M12 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36656M8 | Crouzet Switches | Proximity Sensors IPD 6.5 6MM NONSHLD 3W PNP NC M8 CNCTR | Produkt ist nicht verfügbar | |||||||||||||||||
IMB36656M8 | Crouzet Switches | Description: IPD 6.5-6MM NONSHLD 3W SPST M8 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3A | ROHM | 3 sot-23-6 | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB3A T110 | ROHM | SOT163-B3 | auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB3A T110 SOT163-B3 | ROHM | auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB3A T110 SOT163-B3 | ROHM | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB3AT110 | ROHM SEMICONDUCTOR | IMB3AT110 PNP SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB3AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 | auf Bestellung 1925 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB3AT110 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA | auf Bestellung 211 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB3T110 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB3T110SOT163-B3 | ROHM | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB4 | ROHM | auf Bestellung 1920 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB4A | SOT26/SOT363 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB4AT110 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB4AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB4AT110 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA | Produkt ist nicht verfügbar | |||||||||||||||||
IMB4AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB4AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB500VHGGA | Axiomtek | Single Board Computers LGA1151 socket 6th/7th Gen Intel Core Processor Intel Q170 PCH DDR4 USB 3.0 5 SATA 3.0 mSATA Dual GEs RAID 6 COM VGA/DisplayPort/HDMI HDAudio 1 PCIex16 2 PCIex4 4 PCI 1 Mini-Card | Produkt ist nicht verfügbar | |||||||||||||||||
IMB501VHGGA | Axiomtek | Single Board Computers IMB501VHGGA | Produkt ist nicht verfügbar | |||||||||||||||||
IMB501VHGGA BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 6th/7th Gen Intel Core Processor Intel H110 PCH DDR4 USB 3.0 3 SATA 3.0 mSATA Dual GEs 6 COM VGA/DisplayPort/HDMI HDAudio 1 PCIex16 2 PCIex4 (x1 Signal) 4 PCI 1 Mini-Card | Produkt ist nicht verfügbar | |||||||||||||||||
IMB502VHGGA | Axiomtek | Single Board Computers LGA1151 socket 6th/7th Gen Intel Core Processor Intel Q170 PCH DDR4 USB 3.0 5 SATA 3.0 Dual GEs RAID 6 COM VGA/DVI-D/HDMI HDAudio 1 PCIex16 3 PCIex4 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB502VHGGA BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 6th/7th Gen Intel Core Processor Intel Q170 PCH DDR4 USB 3.0 5 SATA 3.0 Dual GEs RAID 6 COM VGA/DVI-D/HDMI HDAudio 1 PCIex16 3 PCIex4 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB520RVDHGGA-Q370 BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 9th/8th Gen Intel Core Processor Intel Q370 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 4 PCIex4/ 1 PCIex1/ 1 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB520RVDHGGA-Q370 GIFT BOX | Axiomtek | Single Board Computers LGA1151 socket 9th/8th Gen Intel Core Processor Intel Q370 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 4 PCIex4/ 1 PCIex1/ 1 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB520VDHGGA-Q370 BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel Q370 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 4 PCIex4/ 1 PCIex1/ 1 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB520VDHGGA-Q370 GIFT BOX | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel Q370 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 4 PCIex4/ 1 PCIex1/ 1 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB521RVDHGGA-C246 BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 9th/8th Gen Intel Core Processor Intel C246 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 4 PCIex4/ 1 PCIex1/ 1 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB521RVDHGGA-C246 GIFT BOX | Axiomtek | Axiomtek LGA1151 socket 9th/8th Gen Intel Core Processor Intel C246 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 4 PCIex4/ 1 PCIex1/ 1 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB521VDHGGA-C246 BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel C246 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 4 PCIex4/ 1 PCIex1/ 1 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB521VDHGGA-C246 GIFT BOX | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel C246 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 4 PCIex4/ 1 PCIex1/ 1 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB523RVDHGGA-Q370 BULK | Axiomtek | Single Board Computers LGA1151 socket 9th/8th Gen Intel Core Processor Intel Q370 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex4/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB523RVDHGGA-Q370 GIFT BOX | Axiomtek | Axiomtek LGA1151 socket 9th/8th Gen Intel Core Processor Intel Q370 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex4/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB523VDHGGA-Q370 BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel Q370 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex4/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB523VDHGGA-Q370 GIFT BOX | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel Q370 PCH /DDR4 USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex4/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB524RVDHGGA-H310 BULK | Axiomtek | Single Board Computers LGA1151 socket 9th/8th Gen Intel Core Processor Intel H310 PCH /DDR4 USB 3.1(Gen1)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex1/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB524RVDHGGA-H310 GIFT BOX | Axiomtek | Axiomtek LGA1151 socket 9th/8th Gen Intel Core Processor Intel H310 PCH /DDR4 USB 3.1(Gen1)/ SATAIII/ Dual GEs/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex1/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB524VDHGGA-H310 BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel H310 PCH /DDR4 USB 3.1(Gen1)/ SATAIII/ Dual GEs/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex1/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB524VDHGGA-H310 GIFT BOX | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel H310 PCH /DDR4 USB 3.1(Gen1)/ SATAIII/ Dual GEs/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex1/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB525RVDHGGA-C246 BULK | Axiomtek | Single Board Computers | Produkt ist nicht verfügbar | |||||||||||||||||
IMB525RVDHGGA-C246 GIFT BOX | Axiomtek | Single Board Computers LGA1151 socket 9th/8th Gen Intel Core Processor Intel C246 PCH /DDR4 (ECC) USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex4/ 4 PCI | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB525VDHGGA-C246 BULK PACKING | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel C246 PCH /DDR4 (ECC) USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex4/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB525VDHGGA-C246 GIFT BOX | Axiomtek | Single Board Computers LGA1151 socket 8th Gen Intel Core Processor Intel C246 PCH /DDR4 (ECC) USB 3.1(Gen2)/ SATAIII/ Dual GEs/ RAID/ COM PORT/ HDAudio VGA/DVI-D/HDMI/DP 1 PCIex16/ 2 PCIex4/ 4 PCI | Produkt ist nicht verfügbar | |||||||||||||||||
IMB541-Q670E-SP | Axiomtek | Axiomtek IMB541-Q670E-SP | Produkt ist nicht verfügbar | |||||||||||||||||
IMB5AT108 | Rohm Semiconductor | Description: TRANS PREBIAS 2PNP 50V SC74 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMT6 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB5AT108 | ROHM Semiconductor | Digital Transistors DUAL PNP/PNP | Produkt ist nicht verfügbar | |||||||||||||||||
IMB6 | ROHM | auf Bestellung 2863 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB6/B6 | ROHM | auf Bestellung 920 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMB6T108 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB7 | ROHM | 09+ | auf Bestellung 2918 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB7/B7 | ROHM | 97+ SOT-153 | auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB700-S ATX LGA4189 Ice lake SP single | Axiomtek | Single Board Computers IMB700-S ATX LGA4189 Ice lake SP single | Produkt ist nicht verfügbar | |||||||||||||||||
IMB700_CL_LGA4189_4U_JACMM10ATPTC | Axiomtek | Axiomtek IMB700_CL_LGA4189_4U_JACMM10ATPTC | Produkt ist nicht verfügbar | |||||||||||||||||
IMB760-C621A-IP SP | Axiomtek | Axiomtek IMB760-C621A-IP SP | Produkt ist nicht verfügbar | |||||||||||||||||
IMB760-C627A-IPMI SP | Axiomtek | Modules Accessories IMB760-C627A-IPMI SP | Produkt ist nicht verfügbar | |||||||||||||||||
IMB7A | ROHM | 08+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB7AT108 | ROHM Semiconductor | Digital Transistors DUAL PNP/PNP | Produkt ist nicht verfügbar | |||||||||||||||||
IMB7AT108 | Rohm Semiconductor | Description: TRANS 2PNP PREBIAS 0.3W SOT457 Packaging: Tape & Reel (TR) Package / Case: SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-457 | Produkt ist nicht verfügbar | |||||||||||||||||
IMB7T108 | auf Bestellung 8600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB7T109 | auf Bestellung 696000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB7Z462 | Apem | Pushbutton Switches IP67 Sealed Pushbutton Switch | Produkt ist nicht verfügbar | |||||||||||||||||
IMB8 | ROHM | SOT-163 | auf Bestellung 5400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMB8AT108 | auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB8T108 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB9948CA | auf Bestellung 79 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMB9AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMT6 Part Status: Not For New Designs | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB9AT110 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DUAL PNP 50V 70MA | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMB9AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMT6 Part Status: Not For New Designs | auf Bestellung 6059 Stücke: Lieferzeit 10-14 Tag (e) |
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IMB9T110 | auf Bestellung 12400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMBA-8650GR-R22 | IEI Technology Corporation | ATX MOTHERBOARD, PENTIUM 4 PROCESSOR 533/800MHZ FSB WITH VGA, LCD, SATA, EIGHT USB 2.0 , SIX COM AND AUDIO | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-9454G-R40 | IEI | Single Board Computers | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-9454G-R40 | IEI Technology Corporation | SBC, Intel CPU 4GB DDR2 1000Mbps | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-9654-R10 | IEI Technology Corporation | ATX FORM FACTOR MOTHER BOARD SUPPORTS LGA775 CORE2 DUO CORE2 QUAD, PENTIUM D, PROCESSOR AT FSB1066/800/533 FSB | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-ADL-Q670-R10 | IEI Technology Corporation | ATX motherboard supports LGA1700 Intel 12th/13th Generation Core i9/i7/i5/i3, Pentium and Celeron processor, DDR4, Triple independent displays, dual 2.5GbE LAN, M.2, USB 3.2, SATA 6Gb/s, iAUDIO and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-AM5-R10 | IEI | Industrial Motherboards ATX motherboard supports AMD 7000 series processor, DDR5, triple independent displays, dual 2.5GbE LAN, M.2, USB 3.2, SATA 6Gb/s, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-BDE-D1518-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm Intel Xeon D-1518, DDR4, VGA, Dual Intel GbE/ Dual 10GbE, Four USB 3.0, Six SATA 6Gb/s, M.2, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-BDE-D1548-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm Intel Xeon D-1548, DDR4, VGA, Dual Intel GbE/ Dual 10GbE, Four USB 3.0, Six SATA 6Gb/s, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-C2060 (IEI) | Aaeon | ATX MB WITH INTEL LGA 1155 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-C2260-i2-R11 | IEI | Single Board Computers ATX motherboard supports 22nm LGA1150 Intel Xeon E3, Core i3, Pentium and Celeron per Intel C226, DDR3, VGA, Dual Intel PCIe GbE, Four USB 3.0, Six SATA 6Gb/s, HD Audio, iRIS-2400 and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-C2360-i2-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm LGA1151 Intel Xeon E3 v5,Core i3, Pentium , Celeron per Intel C236, DDR4, triple Independent displays VGA/DVI-D/ HDMI 2.0,Dual Intel GbE, USB 3.0, SATA 6Gb/s, HD Audio, IPMI2.0 and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-C604EP-R10 | IEI | Single Board Computers 120W DC/DC 9~36V input 12V/5V/3.3V/-12V/5VSB output,RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-G410-R20 | IEI | Single Board Computers | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-H110-ECO-R10 | IEI | Single Board Computers ATX Motherboard supports LGA1151 6th Generation Intel Core i7/i5/i3, Celeron Pemtium processor,DDR4,Dual Independent Displays DVI-I/HDMI/iDP, Dual Intel GbE LAN, USB 3.0, SATA 6Gb/s,HD Audio,ECO Packing, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-H110-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm LGA1151 6th Generation Intel Core i7/i5/i3, Celeron and Pemtium processor , DDR4, Dual Independent Displays DVI-I/HDMI/iDP, Dual Intel GbE LAN, USB 3.0, SATA 6Gb/s, HD Audio and RoHS | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBA-H112-ECO-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm LGA1151 6th/7th Generation Intel Core i7/i5/i3, Celeron and Pentium processor, DDR4, Dual Independent Displays VGA and HDMI, Dual Intel GbE LAN, USB 3.2, SATA 6Gb/s, HD Audio, ECO packing and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-H112-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm LGA1151 6th/7th Generation Intel Core i7/i5/i3, Celeron and Pentium processor, DDR4, Dual Independent Displays VGA and HDMI, Dual Intel GbE LAN, USB 3.2, SATA 6Gb/s, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-H310-R10 | IEI | Single Board Computers ATX motherboard supports 14nm LGA1151 Intel H310 8th/9th Generation Core i9/i7/i5/i3, Celeron and Pentium processor, DDR4, Dual Independent Displays, dual GbE LAN, USB 3.2, SATA 6Gb/s, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-H420-R10 | iEi Technology | Description: ATX MOTHERBOARD SUPPORTS 14NM LG Packaging: Retail Package Size / Dimension: 12.008" x 0.079" (305.00mm x 2.00mm) Speed: 2.9GHz Operating Temperature: 0°C ~ 60°C Core Processor: Intel 10th/11th GenCore i9/i7/i5/i3/Pentium/Celeron Cooling Type: Fan Form Factor: ATX Expansion Site/Bus: I²C, LPC, PCI, PCIe, SMBus, SPI Video Outputs: DP++, HDMI, VGA Ethernet: GbE, RJ45 USB: USB 2.0 (2), USB 3.1 (4) RS-232 (422, 485): 6 Digital I/O Lines: 8 Watchdog Timer: Yes Storage Interface: SATA 3.0 (4) Number of Cores: 4 RAM Capacity/Installed: 64GB/0GB Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-H610-R10 | IEI | Single Board Computers ATX Motherboard supports 32nm LGA1155 Intel Core i7/i5/i3 CPU per Intel H61,DDR3,VGA/DVI-D,Dual Realtek PCIe GbE,USB 2.0,SATA 3Gb/s,HD Audio and RoHS | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMBA-H810-ECO-R10 | IEI | Single Board Computers LGA1150 4th generation Intel Core i7/i5/i3, Pentium and Celeron CPU with Intel H81, DDR3, VGA/DVI-D/ iDP, Dual Intel PCIe GbE, USB 3.0, SATA 6Gb/s, HD Audio, ECO packing and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-H810-R10 | IEI | Single Board Computers ATX motherboard supports 22nm LGA 1150 Intel 4th generation Core i7/i5/i3, Pentium and Celeron H81, DDR3, VGA/DVI-D/iDP, Dual Intel PCIe GbE , USB3.0, SATA 6Gb/s, HD Audio and RoHS | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBA-Q170-ECO-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm LGA1151 Intel Core Intel Q170, DDR4, Three Independent Displays VGA/ DVI-D / HDMI 2.0/ Dual Intel PCIe GbE, USB 3.0, SATA 6Gb/s, HD Audio, ECO packing and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q170-i2-R10 | IEI | Single Board Computers ATX Motherboard supports 14nm LGA1151 Intel Core Intel Q170, DDR4, Three Independent Displays VGA/ DVI-D / HDMI 2.0/ Dual Intel PCIe GbE, USB 3.0, SATA 6Gb/s, HD Audio, IPMI2.0 and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q370-R10 | IEI | Single Board Computers ATX motherboard supports 14nm LGA1151 Intel 8th/9th Generation Core i9/i7/i5/i3, Celeron and Pentium processor, DDR4, triple independent displays, dual GbE LAN, M.2, USB 3.2, SATA 6Gb/s, HD Audio and RoHS | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBA-Q470-R10 | iEi Technology | Description: SBC 2.9GHZ 4 CORE 128GB/0GB RAM Packaging: Retail Package Size / Dimension: 12.008" x 0.079" (305.00mm x 2.00mm) Speed: 2.9GHz Operating Temperature: 0°C ~ 60°C Core Processor: Intel 10th/11th GenCore i9/i7/i5/i3/Pentium/Celeron Cooling Type: Fan Form Factor: ATX Expansion Site/Bus: I²C, LPC, PCI, PCIe, SMBus, SPI Video Outputs: DP++, HDMI, VGA Ethernet: GbE, RJ45 USB: USB 2.0 (2), USB 3.2 (4) RS-232 (422, 485): 6 Digital I/O Lines: 8 Watchdog Timer: Yes Storage Interface: SATA 3.0 (4) Number of Cores: 4 RAM Capacity/Installed: 128GB/0GB Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q470-R10 | IEI | Single Board Computers ATX motherboard supports LGA1200 Intel 10th Generation Core i9/i7/i5/i3, Celeron and Pentium processor, DDR4, triple independent displays, dual 2.5GbE LAN, M.2, USB 3.2, SATA 6Gb/s, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q470-R10 | IEI Technology Corporation | ATX motherboard supports LGA1200 Intel 10th Generation Core i9/i7/i5/i3, Celeron and Pentium processor, DDR4, triple independent displays, dual 2.5GbE LAN, M.2, USB 3.2, SATA 6Gb/s, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q471-R10 | IEI | Single Board Computers ATX motherboard supports LGA1200 Intel 10th/11th Generation Core i9/i7/i5/i3, Celeron and Pentium processor, DDR4, triple independent displays, triple 2.5GbE LAN, pure PCIe slots,M.2, USB 3.2, SATA 6Gb/s, HD Audio and RoHS | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBA-Q471-R10 | IEI Technology Corporation | ATX motherboard supports LGA1200 Intel 10th/11th Generation Core i9/i7/i5/i3, Celeron and Pentium processor, DDR4, triple independent displays, triple 2.5GbE LAN, pure PCIe slotsM.2, USB 3.2, SATA 6Gb/s, HD Audio and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q471-R10 | iEi Technology | Description: SBC 2.9GHZ 4 CORE 128GB/0GB RAM Packaging: Retail Package Size / Dimension: 12.008" x 0.079" (305.00mm x 2.00mm) Speed: 2.9GHz Operating Temperature: 0°C ~ 60°C Core Processor: Intel 10th/11th GenCore i9/i7/i5/i3/Pentium/Celeron Cooling Type: Fan Form Factor: ATX Expansion Site/Bus: I²C, LPC, PCIe, SMBus, SPI Video Outputs: DP, HDMI, VGA Ethernet: GbE, RJ45 USB: USB 2.0 (2), USB 3.2 (4) RS-232 (422, 485): 4 Digital I/O Lines: 12 Watchdog Timer: Yes Storage Interface: SATA 3.0 (4) Number of Cores: 4 RAM Capacity/Installed: 128GB/0GB Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q670-R30 | IEI | Single Board Computers ATX Motherboard supports 32nm LGA1155 Intel Core i7/i5/i3 CPU per Intel Q67,DDR3,VGA/DVI/HDMI,Dual Intel PCIe GbE,USB 3.0,SATA 6Gb/s,HD Audio,RoHS | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IMBA-Q770-R10 | IEI | Single Board Computers F260 3.75G module kit for embedded system, with BT V2.1, 2 x RF cable, 1 x Antenna, RoHs, For IEI ATO only | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q870-ECO-R10 | IEI | Single Board Computers LGA1150 Intel Core i7/i5/i3, Pentium and Celeron CPU per Intel Q87, DDR3, Triple Independent Display VGA/DVI-D/HDMI/iDP, USB 3.0, SATA 6Gb/s, ECO packing and RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-Q870-i2-R10 | IEI | Single Board Computers ATX Motherboard supports 22nm LGA1150 Intel Core i7/i5/i3/Pentium and Celeron CPU per Intel Q87,DDR3,Three Independent Displays VGA/DVI-D/HDMI/iDP,Dual Intel GbE,USB 3.0,SATA 6Gb/s, Audio, iRIS-2400 and RoHS | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBA-R680-R10 | IEI | Single Board Computers ATX motherboard supports LGA1700 Intel 12th/13th Generation Core i9/i7/i5/i3 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBA-X9654-R10 | IEI Technology Corporation | ATX FORM FACTOR WITH CORE2 QUAD CPU FSB 533/800/1066 MHZ, VGA, DUAL-CHANNEL DDR2 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBC327-25 | auf Bestellung 62500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMBD4148 E9 | GS | SOT23-A2 | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMBD4148 E9 SOT23-A2 | GS | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMBD4148-E3-08 | VISHAY | Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.35W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 1760 Stücke: Lieferzeit 7-14 Tag (e) |
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IMBD4148-E3-08 | VISHAY | Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.35W Kind of package: reel; tape | auf Bestellung 1760 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBD4148-E3-08 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 3-Pin SOT-23 T/R | auf Bestellung 486 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBD4148-E3-08 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-E3-08 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 3-Pin SOT-23 T/R | auf Bestellung 486 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBD4148-E3-08 | Vishay Semiconductors | Small Signal Switching Diodes 100V Io/150mA | auf Bestellung 196915 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-E3-08 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-E3-08 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-E3-08 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | auf Bestellung 108134 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | auf Bestellung 9325 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-E3-18 | Vishay Semiconductors | Small Signal Switching Diodes 100V 150mA 4ns 500mA IFSM | auf Bestellung 10753 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-E3-18 | Vishay | Rectifier Diode Small Signal Switching Si 100V 0.15A 4ns 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-E3-18 | Vishay | Rectifier Diode Small Signal Switching Si 100V 0.15A 4ns 3-Pin SOT-23 T/R | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBD4148-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-E3-18 | Vishay | Rectifier Diode Small Signal Switching Si 100V 0.15A 4ns 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-E3-18 | Vishay | Rectifier Diode Small Signal Switching Si 100V 0.15A 4ns 3-Pin SOT-23 T/R | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBD4148-EP | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMBD4148-G3-08 | Vishay | Diode Small Signal Switching 100V 0.15A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-G3-08 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-G3-08 | Vishay Semiconductors | Small Signal Switching Diodes 100V 150mA 4ns | auf Bestellung 14865 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-G3-08 | Vishay | Diode Small Signal Switching 100V 0.15A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-G3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-G3-18 | Vishay Semiconductors | Small Signal Switching Diodes 100V 150mA 4ns | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-G3-18 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-GS08 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3-08 | Vishay | Diode Small Signal Switching 100V 0.15A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3-08 | VISHAY | Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.35W Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke | auf Bestellung 8500 Stücke: Lieferzeit 7-14 Tag (e) |
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IMBD4148-HE3-08 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Qualification: AEC-Q101 | auf Bestellung 14815 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-HE3-08 | Vishay | Diode Small Signal Switching 100V 0.15A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 1699 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBD4148-HE3-08 | Vishay | Diode Small Signal Switching 100V 0.15A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3-08 | VISHAY | Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.35W Kind of package: reel; tape | auf Bestellung 8500 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBD4148-HE3-08 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-HE3-08 | Vishay | Diode Small Signal Switching 100V 0.15A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 1699 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBD4148-HE3-08 | Vishay Semiconductors | Small Signal Switching Diodes 100V 150mA 4ns 500mA IFSM | auf Bestellung 11974 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-HE3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3-18 | Vishay Semiconductors | Small Signal Switching Diodes 100V 150mA 4ns 500mA IFSM | auf Bestellung 5403 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-HE3-18 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3-A-08 | Vishay | Vishay SWITCHING DIODE SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3-A-18 | Vishay | Vishay SWITCHING DIODE SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3_A-08 | Vishay | Description: SWITCHING DIODE GENPURP SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3_A-08 | Vishay | Small Signal Switching Diodes | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4148-HE3_A-08 | Vishay | Description: SWITCHING DIODE GENPURP SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3_A-18 | Vishay | Description: SWITCHING DIODE GENPURP SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-HE3_A-18 | Vishay Semiconductors | Small Signal Switching Diodes SWITCHING DIODE GENPURP SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4148-V-GS08 | VISHAY | SOT23 | auf Bestellung 157000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMBD4148-V-GS08 | VISHAY | 09+ | auf Bestellung 6018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMBD4148-V-GS08 | VIS | 07+; | auf Bestellung 207000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMBD4148E9 | auf Bestellung 69000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMBD4148NED | DIODES | 03+ | auf Bestellung 15010 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMBD4148NEO(A2) | auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IMBD4148NEO/A2 | ITT | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMBD4448 | ITT | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IMBD4448-E3-08 | Vishay | Rectifier Diode Small Signal Switching Si 100V 0.15A 4ns 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-E3-08 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-E3-08 | Vishay Semiconductors | Small Signal Switching Diodes 750V 150mA 4ns 500mA IFSM | auf Bestellung 15188 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4448-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-E3-18 | Vishay Semiconductors | Small Signal Switching Diodes 750V 150mA 4ns 500mA IFSM | auf Bestellung 4767 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4448-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-E3-18 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-G3-08 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-G3-08 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 100V 150mA 4ns 500mA IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-G3-18 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 100V 150mA 4ns 500mA IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-G3-18 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-HE3-08 | Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-HE3-08 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-HE3-08 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 750V 150mA 4ns 500mA IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-HE3-18 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 750V 150mA 4ns 500mA IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-HE3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBD4448-HE3_A-08 | Vishay | Small Signal Switching Diodes | auf Bestellung 14880 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBD4448-V-GS08 | VISHAY | SOT-23 | auf Bestellung 16400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IMBF170R1K0M1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R1K0M1XTMA1 | INFINEON | Description: INFINEON - IMBF170R1K0M1XTMA1 - Siliziumkarbid-MOSFET, SiC-Trench, Eins, n-Kanal, 5.2 A, 1.7 kV, 0.809 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 5.2A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 68W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.809ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 354 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBF170R1K0M1XTMA1 | Infineon Technologies | Description: SICFET N-CH 1700V 5.2A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Supplier Device Package: PG-TO263-7-13 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V | auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBF170R1K0M1XTMA1 | Infineon Technologies | CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package | The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. | auf Bestellung 1898 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBF170R1K0M1XTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | auf Bestellung 2473 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBF170R1K0M1XTMA1 | INFINEON | Description: INFINEON - IMBF170R1K0M1XTMA1 - Siliziumkarbid-MOSFET, SiC-Trench, Eins, n-Kanal, 5.2 A, 1.7 kV, 0.809 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 5.2A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 68W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.809ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 354 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBF170R1K0M1XTMA1 | Infineon Technologies | Description: SICFET N-CH 1700V 5.2A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Supplier Device Package: PG-TO263-7-13 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBF170R1K0M1XTMA1 | Infineon Technologies | CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package | The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R1K0M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 5.2A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBF170R450M1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R450M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 9.8A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R450M1XTMA1 | INFINEON | Description: INFINEON - IMBF170R450M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 9.8 A, 1.7 kV, 0.364 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 9.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 107W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.364ohm Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.364ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 848 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBF170R450M1XTMA1 | Infineon Technologies | Description: SICFET N-CH 1700V 9.8A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO263-7-13 Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V | auf Bestellung 464 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBF170R450M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 9.8A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R450M1XTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | auf Bestellung 4530 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBF170R450M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 9.8A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R450M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 9.8A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBF170R450M1XTMA1 | INFINEON | Description: INFINEON - IMBF170R450M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 9.8 A, 1.7 kV, 0.364 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 9.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.364ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 848 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBF170R450M1XTMA1 | Infineon Technologies | Description: SICFET N-CH 1700V 9.8A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO263-7-13 Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R650M1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R650M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 7.4A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 5812 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBF170R650M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 7.4A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R650M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 7.4A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R650M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 7.4A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBF170R650M1XTMA1 | INFINEON | Description: INFINEON - IMBF170R650M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 7.4 A, 1.7 kV, 0.526 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 7.4A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 88W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 88W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.526ohm Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.526ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBF170R650M1XTMA1 | Infineon Technologies | Description: SICFET N-CH 1700V 7.4A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-13 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V | auf Bestellung 1891 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBF170R650M1XTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | auf Bestellung 736 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBF170R650M1XTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.7KV 7.4A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBF170R650M1XTMA1 | INFINEON | Description: INFINEON - IMBF170R650M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 7.4 A, 1.7 kV, 0.526 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 7.4A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 88W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.526ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBF170R650M1XTMA1 | Infineon Technologies | Description: SICFET N-CH 1700V 7.4A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-13 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R008M2HXTMA1 | INFINEON | Description: INFINEON - IMBG120R008M2HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 189 A, 1.2 kV, 0.0077 ohm, TO-263HV tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 189A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 800W Bauform - Transistor: TO-263HV Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Gen 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0077ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R008M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 189A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 89.9A, 18V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 28.3mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R008M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package | auf Bestellung 891 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R008M2HXTMA1 | INFINEON | Description: INFINEON - IMBG120R008M2HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 189 A, 1.2 kV, 0.0077 ohm, TO-263HV tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 189A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 800W Bauform - Transistor: TO-263HV Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Gen 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0077ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R008M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 189A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 89.9A, 18V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 28.3mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 800 V | auf Bestellung 222 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R012M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 144A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 17.8mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R012M2HXTMA1 | Infineon Technologies | MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package | auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R012M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 144A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 17.8mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V | auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R017M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Cut Tape (CT) | auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R017M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package | auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R017M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R022M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package | auf Bestellung 812 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R022M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 10.1mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V | auf Bestellung 815 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R022M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 10.1mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R026M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R026M2HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 993 Stücke: Lieferzeit 150-154 Tag (e) |
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IMBG120R026M2HXTMA1 | Infineon Technologies | SIC DISCRETE | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R026M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R030M1HXTMA1 | Infineon Technologies | IMBG120R030M1HXTMA1 | CoolSiC™ MOSFETs 1200V in D2PAK-7L package - achieve top efficiency and enable passive cooling in servo drives, chargers and industrial power supplies. | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R030M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 56A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 11.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R030M1HXTMA1 | Infineon Technologies | IMBG120R030M1HXTMA1 | CoolSiC™ MOSFETs 1200V in D2PAK-7L package - achieve top efficiency and enable passive cooling in servo drives, chargers and industrial power supplies. | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R030M1HXTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | auf Bestellung 620 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R030M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 56A T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R030M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R030M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 56 A, 1.2 kV, 0.03 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 56A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1406 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R030M1HXTMA1 | Infineon Technologies | IMBG120R030M1HXTMA1 | CoolSiC™ MOSFETs 1200V in D2PAK-7L package - achieve top efficiency and enable passive cooling in servo drives, chargers and industrial power supplies. | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R030M1HXTMA1 | Infineon Technologies | IMBG120R030M1HXTMA1 | CoolSiC™ MOSFETs 1200V in D2PAK-7L package - achieve top efficiency and enable passive cooling in servo drives, chargers and industrial power supplies. | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R030M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 56A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 11.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V | auf Bestellung 642 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R030M1HXTMA1 | Infineon Technologies | IMBG120R030M1HXTMA1 | CoolSiC™ MOSFETs 1200V in D2PAK-7L package - achieve top efficiency and enable passive cooling in servo drives, chargers and industrial power supplies. | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R030M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R030M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 56 A, 1.2 kV, 0.03 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 56A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 300W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.03ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1406 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R034M2HXTMA1 | Infineon Technologies | SiC MOSFETs | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R040M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package | auf Bestellung 943 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R045M1HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package | auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R045M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R045M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 47 A, 1.2 kV, 0.045 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 227W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 227W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.045ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 872 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R045M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 47A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R045M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 47A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R045M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R045M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 47 A, 1.2 kV, 0.045 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 227W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 872 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R045M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 47A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R045M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 47A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R045M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 47A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V | auf Bestellung 767 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R045M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 47A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R053M2HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 806 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R060M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 36A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V | auf Bestellung 1853 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R060M1HXTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | auf Bestellung 664 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R060M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R060M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 36 A, 1.2 kV, 0.06 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 181W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 181W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.06ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 987 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R060M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R060M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 36A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R060M1HXTMA1 | Infineon Technologies | 1200 V SiC Trench MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R060M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R060M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 36 A, 1.2 kV, 0.06 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 181W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 181W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.06ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 987 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R060M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R078M2HXTMA1 | Infineon Technologies | SIC DISCRETE | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R078M2HXTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | auf Bestellung 922 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R090M1HXTMA1 | Infineon Technologies | Sic Trench MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R090M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 26A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V FET Feature: Standard Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 3.7mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V | auf Bestellung 2681 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R090M1HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package | auf Bestellung 1509 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R090M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R090M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 26 A, 1.2 kV, 0.09 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.09ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R090M1HXTMA1 | Infineon Technologies | Sic Trench MOSFET | auf Bestellung 671 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R090M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 26A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V FET Feature: Standard Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 3.7mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R090M1HXTMA1 | Infineon Technologies | SP004463788 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R090M1HXTMA1 | Infineon Technologies | Sic Trench MOSFET | auf Bestellung 671 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R090M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R090M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 26 A, 1.2 kV, 0.09 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.09ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R116M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.9mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V | auf Bestellung 821 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R116M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.9mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R116M2HXTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R140M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 18A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R140M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R140M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 18 A, 1.2 kV, 0.189 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pins Produktpalette: CoolSiC Trench Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.189ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1539 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R140M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 18A | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R140M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 18A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 1093 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R140M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 18A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R140M1HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package | auf Bestellung 1562 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R140M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 18A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R140M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R140M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 18 A, 1.2 kV, 0.189 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 107W Gate-Source-Schwellenspannung, max.: 5.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pins Produktpalette: CoolSiC Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.14ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.189ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1539 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R140M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 18A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 1093 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R181M2HXTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | auf Bestellung 903 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R220M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 13A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R220M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 13A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V FET Feature: Standard Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R220M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R220M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 13 A, 1.2 kV, 0.22 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 83W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 83W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.22ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.22ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R220M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 13A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R220M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 13A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG120R220M1HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package | auf Bestellung 411 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R220M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 13A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V FET Feature: Standard Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V | auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R220M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R220M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 13 A, 1.2 kV, 0.22 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 83W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 83W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.22ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.22ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R220M1HXTMA1 | Infineon Technologies | SP004463796 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R234M2HXTMA1 | INFINEON | Description: INFINEON - IMBG120R234M2HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 8.1 A, 1.2 kV, 0.2339 ohm, TO-263HV tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 8.1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 80W Bauform - Transistor: TO-263HV Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Gen 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.2339ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R234M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package | auf Bestellung 699 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R234M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 900µA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R234M2HXTMA1 | INFINEON | Description: INFINEON - IMBG120R234M2HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 8.1 A, 1.2 kV, 0.2339 ohm, TO-263HV tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 8.1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 80W Bauform - Transistor: TO-263HV Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Gen 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.2339ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R234M2HXTMA1 | Infineon Technologies | Description: SIC DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 900µA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V | auf Bestellung 1192 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R350M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 4.7A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 468mOhm @ 2A, 18V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 800 V | auf Bestellung 1504 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R350M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R350M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 4.7 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 4.7A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 65W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 65W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.35ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.35ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1758 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R350M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH 1.2KV 4.7A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R350M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH 1.2KV 4.7A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R350M1HXTMA1 | Infineon Technologies | Description: SICFET N-CH 1.2KV 4.7A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 468mOhm @ 2A, 18V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 800 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG120R350M1HXTMA1 | INFINEON | Description: INFINEON - IMBG120R350M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 4.7 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 4.7A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 65W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.35ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1758 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG120R350M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH 1.2KV 4.7A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG120R350M1HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package | auf Bestellung 2092 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG40R011M2HXTMA1 | Infineon Technologies | SiC MOSFETs SIC-MOS | auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG40R015M2HXTMA1 | Infineon Technologies | Cool SiC G2 MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG40R015M2HXTMA1 | Infineon Technologies | SiC MOSFETs SIC-MOS | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG40R015M2HXTMA1 | Infineon Technologies | Description: SIC-MOS Packaging: Tray Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.7mA Supplier Device Package: PG-TO263-7-11 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG40R015M2HXTMA1 | Infineon Technologies | Description: SIC-MOS Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.7mA Supplier Device Package: PG-TO263-7-11 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG40R025M2HXTMA1 | Infineon Technologies | Cool SiC G2 MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG40R025M2HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG40R036M2HXTMA1 | Infineon Technologies | Cool SiC G2 MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG40R036M2HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG40R045M2HXTMA1 | Infineon Technologies | Cool SiC G2 MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG40R045M2HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R007M2HXTMA1 | Infineon Technologies | IMBG65R007M2HXTMA1 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R007M2HXTMA1 | Infineon Technologies | IMBG65R007M2HXTMA1 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R007M2HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 291 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R007M2HXTMA1 | Infineon Technologies | Description: SICFET N-CH 650V 238A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 2.97mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V | auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R007M2HXTMA1 | Infineon Technologies | Description: SICFET N-CH 650V 238A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 2.97mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R015M2HXTMA1 | Infineon Technologies | SiC MOSFETs SILICON CARBIDE MOSFET | auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R020M2HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 453 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R022M1HXTMA1 | Infineon Technologies | SP005539143 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R022M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 64A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R022M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 12.3mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R022M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 64A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R022M1HXTMA1 | Infineon Technologies | MOSFETs SILICON CARBIDE MOSFET | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R022M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R022M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 64 A, 650 V, 0.022 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 300W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.022ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R022M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 64A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R022M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 12.3mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V | auf Bestellung 1666 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R022M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R022M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 64 A, 650 V, 0.022 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R030M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 63A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R030M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 8.8mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R030M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 63A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R030M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R030M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 63 A, 650 V, 0.03 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 63A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 234W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 234W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.03ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R030M1HXTMA1 | Infineon Technologies | SP005539165 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R030M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 63A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R030M1HXTMA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | auf Bestellung 512 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R030M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 8.8mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R030M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R030M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 63 A, 650 V, 0.03 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 63A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 234W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pins Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R039M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R039M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R039M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 54 A, 650 V, 0.039 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 211W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.039ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 538 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R039M1HXTMA1 | Infineon Technologies | SP005539169 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R039M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 54A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R039M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 54A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 708 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R039M1HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 729 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R039M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R039M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 54A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 708 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R039M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R039M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 54 A, 650 V, 0.039 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 211W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 211W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.039ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.039ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 538 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R039M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 54A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R040M2HXTMA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R048M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V | auf Bestellung 909 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R048M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 45A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R048M1HXTMA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R048M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R048M1HXTMA1 | Infineon Technologies | SP005539172 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R048M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 45A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R050M2HXTMA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | auf Bestellung 336 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R057M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 39A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 315 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R057M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R057M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 39 A, 650 V, 0.057 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 161W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 161W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.057ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.057ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R057M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 39A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R057M1HXTMA1 | Infineon Technologies | SP005539175 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R057M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Power Dissipation (Max): 161W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R057M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 39A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 315 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R057M1HXTMA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | auf Bestellung 2000 Stücke: Lieferzeit 283-287 Tag (e) |
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IMBG65R057M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Power Dissipation (Max): 161W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R057M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R057M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 39 A, 650 V, 0.057 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 161W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 161W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.057ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.057ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R072M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 4mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R072M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R072M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 33 A, 650 V, 0.072 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 140W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.072ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.072ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R072M1HXTMA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | auf Bestellung 1002 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R072M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R072M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 33 A, 650 V, 0.072 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 140W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.072ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.072ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R072M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 33A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R072M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 4mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V | auf Bestellung 817 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R072M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 33A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R072M1HXTMA1 | Infineon Technologies | SP005539178 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R083M1HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 486 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R083M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 28A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 760 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R083M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Power Dissipation (Max): 126W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R083M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R083M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 28 A, 650 V, 0.083 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 126W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 126W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.083ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.083ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R083M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 28A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R083M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 28A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R083M1HXTMA1 | Infineon Technologies | SP005539181 | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R083M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R083M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 28 A, 650 V, 0.083 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 126W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 126W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.083ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.083ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R083M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 28A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R083M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Power Dissipation (Max): 126W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R083M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 28A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 760 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R107M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V | auf Bestellung 810 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R107M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 24A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R107M1HXTMA1 | Infineon Technologies | SP005539184 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R107M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 24A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R107M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R107M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R107M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 24 A, 650 V, 0.107 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 24A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 110W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.107ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.107ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 586 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R107M1HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 848 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R107M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 24A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R107M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 24A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R107M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R107M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 24 A, 650 V, 0.107 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 24A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 110W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.107ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.107ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 586 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R163M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 17A 8-Pin(7+Tab) TO-263 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R163M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R163M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 17 A, 650 V, 0.163 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 85W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 85W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.163ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.163ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 928 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R163M1HXTMA1 | Infineon Technologies | SiC MOSFETs Y | auf Bestellung 772 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R163M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V | auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R163M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 17A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 910 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R163M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R163M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 17A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 910 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R163M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R163M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 17 A, 650 V, 0.163 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 85W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 85W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.163ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.163ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 928 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R163M1HXTMA1 | Infineon Technologies | SP005539187 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R260M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 774 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R260M1HXTMA1 | INFINEON | Description: INFINEON - IMBG65R260M1HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 6 A, 650 V, 0.26 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Verlustleistung Pd: 65W Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 65W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC M1 Trench Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.26ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.26ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 876 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IMBG65R260M1HXTMA1 | Infineon Technologies | SP005539192 | Produkt ist nicht verfügbar | |||||||||||||||||
IMBG65R260M1HXTMA1 | Infineon Technologies | Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V | auf Bestellung 877 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R260M1HXTMA1 | Infineon Technologies | Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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