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IMBG120R116M2HXTMA1

IMBG120R116M2HXTMA1 Infineon Technologies

Infineon-IMBG120R116M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22003d3e20d9 Hersteller: Infineon Technologies
MOSFET SIC DISCRETE
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+12.51 EUR
10+ 10.7 EUR
25+ 9.72 EUR
100+ 8.92 EUR
250+ 8.4 EUR
500+ 8.06 EUR
1000+ 6.85 EUR
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Technische Details IMBG120R116M2HXTMA1 Infineon Technologies

Description: SIC DISCRETE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc), Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V, Power Dissipation (Max): 123W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 1.9mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V.

Weitere Produktangebote IMBG120R116M2HXTMA1 nach Preis ab 5.79 EUR bis 13.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IMBG120R116M2HXTMA1 IMBG120R116M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG120R116M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22003d3e20d9 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
auf Bestellung 821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.38 EUR
10+ 9.12 EUR
100+ 6.71 EUR
500+ 5.79 EUR
Mindestbestellmenge: 2
IMBG120R116M2HXTMA1 IMBG120R116M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG120R116M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22003d3e20d9 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
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