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IMBG40R015M2HXTMA1

IMBG40R015M2HXTMA1 Infineon Technologies

Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3 Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tray
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+13.66 EUR
Mindestbestellmenge: 1000
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Technische Details IMBG40R015M2HXTMA1 Infineon Technologies

Description: SIC-MOS, Packaging: Cut Tape (CT), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc), Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V, Power Dissipation (Max): 3.8W (Ta), 341W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 9.7mA, Supplier Device Package: PG-TO263-7-11, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V.

Weitere Produktangebote IMBG40R015M2HXTMA1 nach Preis ab 14.19 EUR bis 20.56 EUR

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IMBG40R015M2HXTMA1 IMBG40R015M2HXTMA1 Hersteller : Infineon Technologies Infineon_IMBG40R015M2H_DataSheet_v02_00_EN-3483300.pdf SiC MOSFETs SIC-MOS
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.56 EUR
10+ 18.11 EUR
25+ 17.64 EUR
50+ 16.65 EUR
100+ 15.66 EUR
250+ 15.17 EUR
500+ 14.19 EUR
IMBG40R015M2HXTMA1 Hersteller : Infineon Technologies infineon-imbg40r015m2h-datasheet-v02_00-en.pdf Cool SiC G2 MOSFET
Produkt ist nicht verfügbar
IMBG40R015M2HXTMA1 IMBG40R015M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Produkt ist nicht verfügbar