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IMBG120R026M2HXTMA1

IMBG120R026M2HXTMA1 Infineon Technologies

Infineon_IMBG120R026M2H_DataSheet_v01_10_EN-3421418.pdf Hersteller: Infineon Technologies
SiC MOSFETs Y
auf Bestellung 993 Stücke:
Lieferzeit 150-154 Tag (e)
Anzahl Preis ohne MwSt
1+26.24 EUR
10+ 23.13 EUR
100+ 19.99 EUR
500+ 18.13 EUR
1000+ 16.61 EUR
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Technische Details IMBG120R026M2HXTMA1 Infineon Technologies

Description: SIC DISCRETE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V, Power Dissipation (Max): 335W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 8.6mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V.

Weitere Produktangebote IMBG120R026M2HXTMA1 nach Preis ab 18.16 EUR bis 26.31 EUR

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Preis ohne MwSt
IMBG120R026M2HXTMA1 IMBG120R026M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG120R026M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d220003ef20cd Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+26.31 EUR
10+ 23.18 EUR
100+ 20.04 EUR
500+ 18.16 EUR
IMBG120R026M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG120R026M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d220003ef20cd SIC DISCRETE
Produkt ist nicht verfügbar
IMBG120R026M2HXTMA1 IMBG120R026M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG120R026M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d220003ef20cd Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
Produkt ist nicht verfügbar