Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (138838) > Seite 453 nach 2314
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2EDN8533RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN8533RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN7434RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
Produkt ist nicht verfügbar |
||||||||||||||||||
2EDN7434RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN7534RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
Produkt ist nicht verfügbar |
||||||||||||||||||
2EDN7534RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
auf Bestellung 3848 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN7533RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
Produkt ist nicht verfügbar |
||||||||||||||||||
2EDN7533RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
auf Bestellung 4976 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN8534RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
Produkt ist nicht verfügbar |
||||||||||||||||||
2EDN8534RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 8.6ns, 6ns Logic Voltage - VIL, VIH: 1.4V, 1.9V |
auf Bestellung 4925 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN7424RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 6.4ns, 5.4ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
2EDN7524RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN8524RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
2EDN7523RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
DDB2U50N08W1RB23BOMA2 | Infineon Technologies |
Description: IGBT MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
AUXDIFZ44ESTRL | Infineon Technologies |
Description: MOSFET N-CH 60V 48A D2PAK Packaging: Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRFS52N15DHR | Infineon Technologies | Description: IRFS52N15DHR |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||||
BS0615N | Infineon Technologies | Description: N-CHANNEL POWER MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||||||
DD800S33K2CNOSA1 | Infineon Technologies |
Description: DIODE MOD GP 3300V AIHV130-3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Supplier Device Package: A-IHV130-3 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A Current - Reverse Leakage @ Vr: 1100 A @ 1800 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
DD400S33K2CNOSA1 | Infineon Technologies |
Description: DIODE MOD GP 3300V AIHV130-3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Supplier Device Package: A-IHV130-3 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A Current - Reverse Leakage @ Vr: 550 A @ 1800 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
DD400S33K2CB3NDSA1 | Infineon Technologies |
Description: MODULE DIODE HV130-3 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 400A (DC) Supplier Device Package: A-IHV130-3 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A Current - Reverse Leakage @ Vr: 550 A @ 1800 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
DD800S33K2CB3S2NDSA1 | Infineon Technologies |
Description: DIODE MOD GP 3300V 800A AIHV130 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 800A (DC) Supplier Device Package: A-IHV130-3 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A Current - Reverse Leakage @ Vr: 1100 A @ 1800 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
FP200R12N3T7BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3-3 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 20 µA Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
FP35R12W2T7BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-711 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY1B-2 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.8 µA Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DDB2U20N12W1RFB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY1B-2311 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: AG-EASY1B-1 Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 58 µA @ 1200 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
FP15R12W1T7B3BOMA1 | Infineon Technologies |
Description: IGBT MODULE LOW POWER EASY Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: 175°C (TJ) NTC Thermistor: No Supplier Device Package: AG-EASY1B-2 IGBT Type: Trench Field Stop Part Status: Active Voltage - Collector Emitter Breakdown (Max): 1200 V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
FP15R12W1T7B11BOMA1 | Infineon Technologies |
Description: IGBT MODULE LOW POWER EASY Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: 175°C (TJ) NTC Thermistor: No Supplier Device Package: AG-EASY1B-2 IGBT Type: Trench Field Stop Part Status: Active Voltage - Collector Emitter Breakdown (Max): 1200 V |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CY8C20337-24LQXI | Infineon Technologies | Description: IC CAPSENCE 8K FLASH 24QFN |
auf Bestellung 1438 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CY8C20337-24LQXIT | Infineon Technologies | Description: IC CAPSENCE 8K FLASH 24QFN |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DF200R07W2H3B77BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-411 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: AG-EASY2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 20 mW Current - Collector Cutoff (Max): 21 µA Input Capacitance (Cies) @ Vce: 2.95 nF @ 650 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
S2GO_CUR-SENSE_TLI4971 | Infineon Technologies | Description: SENSOR BOARD |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||||
TLI4971 MS2GO | Infineon Technologies | Description: XENSIV MAG CUR SENSOR |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||||
TLI4971A075T5E0001XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 75A 8TISON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Supplier Device Package: PG-TISON-8-1 Grade: Automotive Part Status: Active Number of Channels: 1 Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
TLI4971A075T5E0001XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 75A 8TISON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Supplier Device Package: PG-TISON-8-1 Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 5035 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
TLI4971A025T5E0001XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 25A 8TISON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 48mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 25A Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1827 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
TLI4971A075T5UE0001XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 75A 8TISON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TLI4971A075T5UE0001XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 75A 8TISON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
||||||||||||||||||
FF225R12ME3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 325A 1150W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 325 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1150 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 16 nF @ 25 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
DEMODISTANCE2GOLTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT24LTR11N16 Packaging: Bulk For Use With/Related Products: BGT24LTR11N16 Frequency: 24GHz Type: Transceiver Supplied Contents: Board(s) Part Status: Active |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF6716MTRPBF | Infineon Technologies |
Description: IRF6716 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Power Dissipation (Max): 3.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: DIRECTFET™ MX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V |
auf Bestellung 56952 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
BFP640FESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4.7V 46GHZ 4TSFP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 8B ~ 30.5dB Power - Max: 200mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz Supplier Device Package: 4-TSFP Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPI072N10N3G | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CY8C5866LTI-LP022 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 68QFN Packaging: Bulk Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x20b, 1x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CY8C5248LTI-030 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 68QFN Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x12b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Obsolete Number of I/O: 36 |
auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
BSC077N12NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 13.4/98A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V |
auf Bestellung 17874 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IPI147N12N3GAKSA1 | Infineon Technologies | Description: MOSFET N-CH 120V 56A TO262-3 |
auf Bestellung 14155 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||||
TLE6228GPNT | Infineon Technologies | Description: IC PWR SWITCH N-CHAN 1:1 DSO-20 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TLE6228GPAUMA1 | Infineon Technologies | Description: IC PWR SWITCH N-CHAN 1:1 DSO-20 |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPD70P04P409ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 73A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO252-3-313 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IPD70P04P409ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 73A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO252-3-313 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9785 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IPB180P04P403ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1765 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IPB180P04P403ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1765 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CY8C4146LQI-S423 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 40QFN Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Number of I/O: 34 DigiKey Programmable: Not Verified |
auf Bestellung 4875 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IPD60R460CEATMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 9.1A TO252-3 |
Produkt ist nicht verfügbar |
||||||||||||||||||
ISC019N04NM5ATMA1 | Infineon Technologies |
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 50µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
ISC019N04NM5ATMA1 | Infineon Technologies |
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 50µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
auf Bestellung 10673 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DDB6U145N16LHOSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1600V Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Technology: Standard Diode Configuration: 3 Independent Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A Current - Reverse Leakage @ Vr: 5 mA @ 1600 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
CY8C20466A-24LQXI | Infineon Technologies |
Description: IC CAPSENSE PSOC 32K 32QFN Packaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (32kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CY8C3445LTI-079 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 68QFN Packaging: Bulk Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 2x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRS2890DSPBF | Infineon Technologies | Description: IC GATE DRVR HALF-BRIDGE 14SOIC |
auf Bestellung 7885 Stücke: Lieferzeit 10-14 Tag (e) |
|
2EDN8533RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.69 EUR |
2EDN8533RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.85 EUR |
11+ | 1.65 EUR |
25+ | 1.57 EUR |
100+ | 1.29 EUR |
250+ | 1.21 EUR |
500+ | 1.07 EUR |
1000+ | 0.84 EUR |
2500+ | 0.79 EUR |
2EDN7434RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Produkt ist nicht verfügbar
2EDN7434RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.85 EUR |
11+ | 1.65 EUR |
25+ | 1.57 EUR |
100+ | 1.29 EUR |
250+ | 1.21 EUR |
500+ | 1.07 EUR |
1000+ | 0.84 EUR |
2500+ | 0.79 EUR |
2EDN7534RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Produkt ist nicht verfügbar
2EDN7534RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
auf Bestellung 3848 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.85 EUR |
11+ | 1.65 EUR |
25+ | 1.57 EUR |
100+ | 1.29 EUR |
250+ | 1.21 EUR |
500+ | 1.07 EUR |
1000+ | 0.84 EUR |
2500+ | 0.79 EUR |
2EDN7533RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Produkt ist nicht verfügbar
2EDN7533RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
auf Bestellung 4976 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.85 EUR |
11+ | 1.65 EUR |
25+ | 1.57 EUR |
100+ | 1.29 EUR |
250+ | 1.21 EUR |
500+ | 1.07 EUR |
1000+ | 0.84 EUR |
2500+ | 0.79 EUR |
2EDN8534RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Produkt ist nicht verfügbar
2EDN8534RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 8.6ns, 6ns
Logic Voltage - VIL, VIH: 1.4V, 1.9V
auf Bestellung 4925 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.85 EUR |
11+ | 1.65 EUR |
25+ | 1.57 EUR |
100+ | 1.29 EUR |
250+ | 1.21 EUR |
500+ | 1.07 EUR |
1000+ | 0.84 EUR |
2500+ | 0.79 EUR |
2EDN7424RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
2EDN7524RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.03 EUR |
10000+ | 0.99 EUR |
2EDN8524RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
2EDN7523RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
DDB2U50N08W1RB23BOMA2 |
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
AUXDIFZ44ESTRL |
Produkt ist nicht verfügbar
IRFS52N15DHR |
Hersteller: Infineon Technologies
Description: IRFS52N15DHR
Description: IRFS52N15DHR
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)BS0615N |
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
DD800S33K2CNOSA1 |
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V AIHV130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
Description: DIODE MOD GP 3300V AIHV130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
Produkt ist nicht verfügbar
DD400S33K2CNOSA1 |
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V AIHV130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
Current - Reverse Leakage @ Vr: 550 A @ 1800 V
Description: DIODE MOD GP 3300V AIHV130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
Current - Reverse Leakage @ Vr: 550 A @ 1800 V
Produkt ist nicht verfügbar
DD400S33K2CB3NDSA1 |
Hersteller: Infineon Technologies
Description: MODULE DIODE HV130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
Current - Reverse Leakage @ Vr: 550 A @ 1800 V
Description: MODULE DIODE HV130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
Current - Reverse Leakage @ Vr: 550 A @ 1800 V
Produkt ist nicht verfügbar
DD800S33K2CB3S2NDSA1 |
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V 800A AIHV130
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 800A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
Description: DIODE MOD GP 3300V 800A AIHV130
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 800A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
Produkt ist nicht verfügbar
FP200R12N3T7BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 583 EUR |
10+ | 561.09 EUR |
FP35R12W2T7BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.8 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.8 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 95.85 EUR |
15+ | 87.13 EUR |
DDB2U20N12W1RFB11BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 107.94 EUR |
FP15R12W1T7B3BOMA1 |
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 83.21 EUR |
FP15R12W1T7B11BOMA1 |
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 73.62 EUR |
CY8C20337-24LQXI |
Hersteller: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 24QFN
Description: IC CAPSENCE 8K FLASH 24QFN
auf Bestellung 1438 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 8.25 EUR |
CY8C20337-24LQXIT |
Hersteller: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 24QFN
Description: IC CAPSENCE 8K FLASH 24QFN
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 8.25 EUR |
DF200R07W2H3B77BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 21 µA
Input Capacitance (Cies) @ Vce: 2.95 nF @ 650 V
Description: LOW POWER EASY AG-EASY2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 21 µA
Input Capacitance (Cies) @ Vce: 2.95 nF @ 650 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 94.85 EUR |
S2GO_CUR-SENSE_TLI4971 |
Hersteller: Infineon Technologies
Description: SENSOR BOARD
Description: SENSOR BOARD
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)TLI4971 MS2GO |
Hersteller: Infineon Technologies
Description: XENSIV MAG CUR SENSOR
Description: XENSIV MAG CUR SENSOR
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)TLI4971A075T5E0001XUMA1 |
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 4.53 EUR |
TLI4971A075T5E0001XUMA1 |
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5035 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.7 EUR |
10+ | 7.28 EUR |
25+ | 6.47 EUR |
50+ | 6.15 EUR |
100+ | 5.99 EUR |
500+ | 5.02 EUR |
1000+ | 4.69 EUR |
TLI4971A025T5E0001XUMA1 |
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1827 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.64 EUR |
10+ | 6.48 EUR |
25+ | 5.76 EUR |
50+ | 5.47 EUR |
100+ | 5.33 EUR |
500+ | 4.46 EUR |
1000+ | 4.18 EUR |
TLI4971A075T5UE0001XUMA1 |
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLI4971A075T5UE0001XUMA1 |
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
FF225R12ME3BOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 325A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 325 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Description: IGBT MOD 1200V 325A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 325 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Produkt ist nicht verfügbar
DEMODISTANCE2GOLTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT24LTR11N16
Packaging: Bulk
For Use With/Related Products: BGT24LTR11N16
Frequency: 24GHz
Type: Transceiver
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR BGT24LTR11N16
Packaging: Bulk
For Use With/Related Products: BGT24LTR11N16
Frequency: 24GHz
Type: Transceiver
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 332.97 EUR |
IRF6716MTRPBF |
Hersteller: Infineon Technologies
Description: IRF6716 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
Description: IRF6716 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
auf Bestellung 56952 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
205+ | 2.59 EUR |
BFP640FESDH6327XTSA1 |
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANS NPN 4.7V 46GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
IPI072N10N3G |
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
313+ | 1.69 EUR |
CY8C5866LTI-LP022 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 25.41 EUR |
CY8C5248LTI-030 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 19.54 EUR |
BSC077N12NS3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
auf Bestellung 17874 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.4 EUR |
10+ | 3.69 EUR |
100+ | 2.98 EUR |
500+ | 2.65 EUR |
1000+ | 2.27 EUR |
2000+ | 2.14 EUR |
IPI147N12N3GAKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 56A TO262-3
Description: MOSFET N-CH 120V 56A TO262-3
auf Bestellung 14155 Stücke:
Lieferzeit 10-14 Tag (e)TLE6228GPNT |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Produkt ist nicht verfügbar
TLE6228GPAUMA1 |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Produkt ist nicht verfügbar
IPD70P04P409ATMA2 |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.08 EUR |
5000+ | 1.04 EUR |
IPD70P04P409ATMA2 |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9785 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.39 EUR |
10+ | 1.99 EUR |
100+ | 1.58 EUR |
500+ | 1.34 EUR |
1000+ | 1.13 EUR |
IPB180P04P403ATMA2 |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 3.03 EUR |
IPB180P04P403ATMA2 |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.48 EUR |
10+ | 5.44 EUR |
100+ | 4.4 EUR |
500+ | 3.91 EUR |
CY8C4146LQI-S423 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 4875 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.3 EUR |
10+ | 5.67 EUR |
25+ | 5.36 EUR |
80+ | 4.64 EUR |
230+ | 4.4 EUR |
490+ | 3.95 EUR |
980+ | 3.33 EUR |
2450+ | 3.17 EUR |
IPD60R460CEATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.1A TO252-3
Description: MOSFET N-CH 600V 9.1A TO252-3
Produkt ist nicht verfügbar
ISC019N04NM5ATMA1 |
Hersteller: Infineon Technologies
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.85 EUR |
ISC019N04NM5ATMA1 |
Hersteller: Infineon Technologies
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 10673 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.15 EUR |
10+ | 2.01 EUR |
100+ | 1.36 EUR |
500+ | 1.08 EUR |
1000+ | 0.99 EUR |
2000+ | 0.91 EUR |
DDB6U145N16LHOSA1 |
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
CY8C20466A-24LQXI |
Hersteller: Infineon Technologies
Description: IC CAPSENSE PSOC 32K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC CAPSENSE PSOC 32K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.59 EUR |
CY8C3445LTI-079 |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 13.45 EUR |
IRS2890DSPBF |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
auf Bestellung 7885 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
253+ | 1.91 EUR |