Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (138831) > Seite 448 nach 2314
Foto | Bezeichnung | Hersteller | Beschreibung |
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CHL8225G-02CRT | Infineon Technologies |
Description: IC REG CTRLR GPU 2OUT 40QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: 0°C ~ 85°C (TA) Applications: Controller, GPU Core Power Supplier Device Package: 40-QFN (6x6) |
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CHL8225G-06CRT | Infineon Technologies | Description: IC REG CTRLR GPU 2OUT 40QFN |
Produkt ist nicht verfügbar |
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BA595E6359HTMA1 | Infineon Technologies | Description: RF DIODE PIN 50V SC79-2 |
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BA595E6359HTMA1 | Infineon Technologies | Description: RF DIODE PIN 50V SC79-2 |
Produkt ist nicht verfügbar |
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BA885E7631HTMA1 | Infineon Technologies |
Description: RF DIODE PIN 50V SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SC79-2-1 Grade: Automotive Current - Max: 50 mA Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPC313N10N3RX1SA2 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Bulk Part Status: Active |
auf Bestellung 7784 Stücke: Lieferzeit 10-14 Tag (e) |
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SAK-XC2797X-200F100LAB | Infineon Technologies |
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP Packaging: Bulk Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 1.6MB (1.6M x 8) RAM Size: 138K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 30x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-176-12 Part Status: Active Number of I/O: 150 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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SAKXC2297H136F80LABKXUMA2 | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILY Packaging: Bulk Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.088MB (1.088M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 40x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-176-12 Part Status: Active Number of I/O: 150 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IAUS240N08S5N019ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 240A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 160µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2506 Stücke: Lieferzeit 10-14 Tag (e) |
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IPTG014N10NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 37A/366A HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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IPTG014N10NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 37A/366A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
auf Bestellung 2357 Stücke: Lieferzeit 10-14 Tag (e) |
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BSM50GD120DLCBPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2A Part Status: Last Time Buy Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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BSM50GD120DN2BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2A Part Status: Last Time Buy Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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IRF7751TRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 30V 4.5A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-TSSOP |
Produkt ist nicht verfügbar |
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S26KS512SDPBHN020 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Part Status: Active Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S26KS512SDABHI030 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S26KS512SDGBHM030 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGA Packaging: Bulk Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Part Status: Active Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 759 Stücke: Lieferzeit 10-14 Tag (e) |
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S26KS512SDPBHB020 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Part Status: Active Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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ETD580N16P60HPSA1 | Infineon Technologies | Description: SCR MODULE 1.6KV 700A MODULE |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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ETD580N16P60HPSA1 | Infineon Technologies | Description: SCR MODULE 1.6KV 700A MODULE |
Produkt ist nicht verfügbar |
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ETT510N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 515 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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ETD630N16P60HPSA1 | Infineon Technologies | Description: SCR MODULE 1.6KV 700A MODULE |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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ETD630N16P60HPSA1 | Infineon Technologies | Description: SCR MODULE 1.6KV 700A MODULE |
Produkt ist nicht verfügbar |
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ETT580N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 586 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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ETT630N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 635 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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ETD510N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 515 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPB65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 981 Stücke: Lieferzeit 10-14 Tag (e) |
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IPWS65R035CFD7AXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 63A TO247-3-41 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V Power Dissipation (Max): 305W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZ50N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-4 Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 36ns/294ns Switching Energy: 770µJ (on), 880µJ (off) Test Condition: 400V, 25A, 23.1Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 274 W |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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FP50R12W2T7BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-711 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 8 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
Produkt ist nicht verfügbar |
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FP50R12W2T7PB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 8 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
Produkt ist nicht verfügbar |
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F415MR12W2M1B76BOMA1 | Infineon Technologies | Description: LOW POWER EASY AG-EASY2B-2 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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PXP1600CPQG003XUMA1 | Infineon Technologies | Description: IC CONTROLLER |
Produkt ist nicht verfügbar |
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1EDI3031ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20 Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 12A Technology: Magnetic Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 55ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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1EDI3031ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20 Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 12A Technology: Magnetic Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 55ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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1EDI3021ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20 Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 12A Technology: Magnetic Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 55ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V Qualification: AEC-Q100 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI3021ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20 Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 12A Technology: Magnetic Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 55ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V Qualification: AEC-Q100 |
auf Bestellung 1329 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI3020ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20 Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 12A Technology: Magnetic Coupling Current - Output High, Low: 12A, 12A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 55ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI3020ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20 Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 12A Technology: Magnetic Coupling Current - Output High, Low: 12A, 12A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 55ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPAN60R650CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9.9A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
auf Bestellung 691 Stücke: Lieferzeit 10-14 Tag (e) |
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SAK-XC2264-56F66LAC | Infineon Technologies |
Description: 16 BIT C166 MICROXC2200 FAMILY ( Packaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 448KB (448K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 8x8/10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-3 Number of I/O: 75 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IPL65R095CFD7AUMA1 | Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPL65R095CFD7AUMA1 | Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V |
Produkt ist nicht verfügbar |
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TLE7469GV53AUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V/5V DSO-12 Packaging: Cut Tape (CT) Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA, 215mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 45V Number of Regulators: 2 Supplier Device Package: PG-DSO-12-11 Voltage - Output (Min/Fixed): 3.3V, 5V Control Features: Inhibit, Reset, Watchdog Grade: Automotive Part Status: Active PSRR: 60dB (100Hz), 60dB (100Hz) Voltage Dropout (Max): -, 0.6V @ 215mA Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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T1080N04TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 2000A DO200AA Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1078 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 2000 A Voltage - Off State: 600 V |
Produkt ist nicht verfügbar |
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IRF6898MTRPBF | Infineon Technologies |
Description: IRF6898 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: DirectFET™ Isometric MX Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V |
Produkt ist nicht verfügbar |
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IFX80471SKV50 | Infineon Technologies |
Description: IFX80471 - SWITCHING REGULATORS Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14 Synchronous Rectifier: Yes Control Features: Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Part Status: Active Number of Outputs: 1 |
auf Bestellung 7257 Stücke: Lieferzeit 10-14 Tag (e) |
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IFX80471SKV | Infineon Technologies |
Description: IFX80471 - SWITCHING REGULATORS Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14 Synchronous Rectifier: Yes Control Features: Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Part Status: Active Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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IFX80471SKVXUMA1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSO Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14-1 Synchronous Rectifier: Yes Control Features: Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Part Status: Obsolete Number of Outputs: 1 |
auf Bestellung 9325 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ0803NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 7.7A/37A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 18µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
Produkt ist nicht verfügbar |
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ISZ0803NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 7.7A/37A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 18µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
Produkt ist nicht verfügbar |
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ISC0803NLSATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TDSON-8 |
Produkt ist nicht verfügbar |
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ISC0803NLSATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TDSON-8 |
Produkt ist nicht verfügbar |
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IPW50R399CPFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 9A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V |
auf Bestellung 5520 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD220N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD088N06N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 34µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPD048N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 58µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7524D1TRPBF | Infineon Technologies |
Description: MOSFET P-CH 20V 1.7A MICRO8 Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: Micro8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
Produkt ist nicht verfügbar |
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IAUS300N08S5N012TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 300A HDSOP-16-2 Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V |
Produkt ist nicht verfügbar |
CHL8225G-02CRT |
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Produkt ist nicht verfügbar
CHL8225G-06CRT |
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
BA595E6359HTMA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Description: RF DIODE PIN 50V SC79-2
Produkt ist nicht verfügbar
BA595E6359HTMA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Description: RF DIODE PIN 50V SC79-2
Produkt ist nicht verfügbar
BA885E7631HTMA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Description: RF DIODE PIN 50V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPC313N10N3RX1SA2 |
auf Bestellung 7784 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
84+ | 5.82 EUR |
SAK-XC2797X-200F100LAB |
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 30x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 30x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAKXC2297H136F80LABKXUMA2 |
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IAUS240N08S5N019ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2506 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.43 EUR |
10+ | 5.62 EUR |
100+ | 4.02 EUR |
500+ | 3.33 EUR |
IPTG014N10NM5ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1800+ | 6.22 EUR |
IPTG014N10NM5ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 2357 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.96 EUR |
10+ | 9.4 EUR |
100+ | 7.83 EUR |
500+ | 6.91 EUR |
BSM50GD120DLCBPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
BSM50GD120DN2BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
IRF7751TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Description: MOSFET 2P-CH 30V 4.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
S26KS512SDPBHN020 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S26KS512SDABHI030 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S26KS512SDGBHM030 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 759 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 27.19 EUR |
S26KS512SDPBHB020 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.82 EUR |
10+ | 24.83 EUR |
25+ | 24.49 EUR |
40+ | 24.18 EUR |
80+ | 21.19 EUR |
338+ | 20.28 EUR |
676+ | 20.15 EUR |
ETD580N16P60HPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Description: SCR MODULE 1.6KV 700A MODULE
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 311.26 EUR |
ETD580N16P60HPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Description: SCR MODULE 1.6KV 700A MODULE
Produkt ist nicht verfügbar
ETT510N16P60HPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 394.08 EUR |
ETD630N16P60HPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Description: SCR MODULE 1.6KV 700A MODULE
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)ETD630N16P60HPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Description: SCR MODULE 1.6KV 700A MODULE
Produkt ist nicht verfügbar
ETT580N16P60HPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 586 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 586 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 430.5 EUR |
ETT630N16P60HPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 403.37 EUR |
ETD510N16P60HPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 377.87 EUR |
IPB65R190CFD7AATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPB65R190CFD7AATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.77 EUR |
10+ | 4.84 EUR |
100+ | 3.92 EUR |
500+ | 3.48 EUR |
IPWS65R035CFD7AXKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 63A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Description: MOSFET N-CH 650V 63A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 33.62 EUR |
10+ | 30.9 EUR |
IKZ50N65ES5XKSA1 |
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
93+ | 5.15 EUR |
FP50R12W2T7BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
FP50R12W2T7PB11BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
F415MR12W2M1B76BOMA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Description: LOW POWER EASY AG-EASY2B-2
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 507.8 EUR |
PXP1600CPQG003XUMA1 |
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Description: IC CONTROLLER
Produkt ist nicht verfügbar
1EDI3031ASXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
1EDI3031ASXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
1EDI3021ASXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 4.7 EUR |
1EDI3021ASXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
auf Bestellung 1329 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.42 EUR |
10+ | 7.77 EUR |
25+ | 6.83 EUR |
100+ | 5.78 EUR |
250+ | 5.27 EUR |
500+ | 4.95 EUR |
1EDI3020ASXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 12A, 12A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Grade: Automotive
Qualification: AEC-Q100
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 12A, 12A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 5.02 EUR |
1EDI3020ASXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 12A, 12A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Grade: Automotive
Qualification: AEC-Q100
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 12A, 12A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.42 EUR |
10+ | 7.77 EUR |
25+ | 6.83 EUR |
100+ | 5.78 EUR |
250+ | 5.27 EUR |
500+ | 4.95 EUR |
IPAN60R650CEXKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: MOSFET N-CH 600V 9.9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 691 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
691+ | 0.83 EUR |
SAK-XC2264-56F66LAC |
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8x8/10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8x8/10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPL65R095CFD7AUMA1 |
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Produkt ist nicht verfügbar
IPL65R095CFD7AUMA1 |
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Produkt ist nicht verfügbar
TLE7469GV53AUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO-12
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA, 215mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 45V
Number of Regulators: 2
Supplier Device Package: PG-DSO-12-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz), 60dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 215mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V/5V DSO-12
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA, 215mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 45V
Number of Regulators: 2
Supplier Device Package: PG-DSO-12-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz), 60dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 215mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.5 EUR |
T1080N04TOFXPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
IRF6898MTRPBF |
Hersteller: Infineon Technologies
Description: IRF6898 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Description: IRF6898 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Produkt ist nicht verfügbar
IFX80471SKV50 |
Hersteller: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
auf Bestellung 7257 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 1.67 EUR |
IFX80471SKV |
Hersteller: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
Produkt ist nicht verfügbar
IFX80471SKVXUMA1 |
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
auf Bestellung 9325 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 1.63 EUR |
ISZ0803NLSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Produkt ist nicht verfügbar
ISZ0803NLSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Produkt ist nicht verfügbar
ISC0803NLSATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
ISC0803NLSATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
IPW50R399CPFKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
251+ | 1.95 EUR |
IPD220N06L3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.49 EUR |
5000+ | 0.45 EUR |
7500+ | 0.44 EUR |
12500+ | 0.42 EUR |
IPD088N06N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Produkt ist nicht verfügbar
IPD048N06L3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.82 EUR |
5000+ | 0.77 EUR |
IRF7524D1TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Produkt ist nicht verfügbar
IAUS300N08S5N012TATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Produkt ist nicht verfügbar