Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (138868) > Seite 445 nach 2315
Foto | Bezeichnung | Hersteller | Beschreibung |
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AUIRB24427STR | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-9 Rise / Fall Time (Typ): 33ns, 33ns (Max) Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
auf Bestellung 2288 Stücke: Lieferzeit 10-14 Tag (e) |
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IRHNA57260SE | Infineon Technologies | Description: IRHNA57260SE |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3123MC12HXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 13.5A, 14A Technology: Magnetic Coupling Current - Output High, Low: 13.5A, 14A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3123MC12HXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 13.5A, 14A Technology: Magnetic Coupling Current - Output High, Low: 13.5A, 14A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 3740 Stücke: Lieferzeit 10-14 Tag (e) |
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BGSF18DM20E6327XUMA1138 | Infineon Technologies |
Description: IC RF SWITCH Packaging: Bulk |
Produkt ist nicht verfügbar |
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IMIC32V06X6SA1 | Infineon Technologies |
Description: INTELLIGENT POWER MODULE Packaging: Tray Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IMIC32V05X6SA1 | Infineon Technologies |
Description: INTELLIGENT POWER MODULE Packaging: Tray Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TDA88240AUMA1 | Infineon Technologies | Description: IFX POWERSTAGE/DRIVER PG-IQFN-30 |
Produkt ist nicht verfügbar |
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1ED3120MC12HXUMA1 | Infineon Technologies |
Description: DGTL ISO 8KV 1CH GT DVR DSO8-66 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 909 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3131MU12HXUMA1 | Infineon Technologies |
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3131MU12HXUMA1 | Infineon Technologies |
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3121MU12HXUMA1 | Infineon Technologies |
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3121MU12HXUMA1 | Infineon Technologies |
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 1386 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE75602EMHXUMA1 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-SSOP-24-9 Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TLE75602EMDXUMA1 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-SSOP-24-9 Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SAH-XC2237M-104F80LAAHXUMA1 | Infineon Technologies |
Description: IC MCU 16/32BT 832KB FLSH 64LQFP Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 832KB (832K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 110°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-13 Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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SAK-XC164CM-4F20FAA | Infineon Technologies |
Description: IC MCU 16BIT 32KB FLASH 64TQFP Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 14x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-64-8 Part Status: Active Number of I/O: 47 |
Produkt ist nicht verfügbar |
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SAK-XC888C-6FFI5VAC | Infineon Technologies |
Description: IC MCU 8BIT 24KB FLASH 64TQFP Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 24KB (24K x 8) RAM Size: 1.75K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TQFP-64 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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PSB2132HV2.2 | Infineon Technologies |
Description: SICOFI-TE TWO CHANNEL CODEC Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Function: CODEC Filter Interface: IOM-2 PCM, SPI Voltage - Supply: 5V Current - Supply: 18mA Supplier Device Package: P-MQFP-64 Part Status: Active Number of Circuits: 2 Power (Watts): 90 mW |
auf Bestellung 33825 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9832QXXUMA4 | Infineon Technologies | Description: TLE9832 - MICROCONTROLLER WITH L |
Produkt ist nicht verfügbar |
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TLE9832QVXUMA3 | Infineon Technologies | Description: TLE9832 - SMART LIN-BASED RELAY |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1480BV33-200AXC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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XC2297H136F80LABKXUMA2 | Infineon Technologies |
Description: IC MCU 16/32B 1.088MB FL 176QFP Packaging: Bulk Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.088MB (1.088M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 40x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-176-12 Part Status: Active Number of I/O: 150 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TLE49681LHALA1 | Infineon Technologies |
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2 Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Bipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 2.25mT Trip, -2.25mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SSO-3-2 Test Condition: 25°C Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1499 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE49681LHALA1 | Infineon Technologies |
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2 Features: Temperature Compensated Packaging: Tape & Box (TB) Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Bipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 2.25mT Trip, -2.25mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SSO-3-2 Test Condition: 25°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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TLE49452LHALA1 | Infineon Technologies |
Description: MAGNETIC SWITCH BIPOLAR 3SSO Features: Temperature Compensated Packaging: Tape & Box (TB) Output Type: Open Collector Polarization: North Pole, South Pole Function: Bipolar Switch Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3.8V ~ 24V Technology: Hall Effect Sensing Range: ±3mT Trip, ±6mT Release Current - Output (Max): 100mA Current - Supply (Max): 8mA Test Condition: 25°C Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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FF600R12ME7B11BPSA2 | Infineon Technologies |
Description: MEDIUM POWER ECONO AG-ECONOD-741 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 35 µA Input Capacitance (Cies) @ Vce: 92 nF @ 25 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3131MC12HXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3131MC12HXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STT1900N16P55XPSA1 | Infineon Technologies |
Description: SCR MODULE POWERBLOCK PS55-1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Voltage - Off State: 1.6 kV |
Produkt ist nicht verfügbar |
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BTS4880R | Infineon Technologies |
Description: BTS4880 - PROFET - SMART HIGH SI Packaging: Bulk Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C Output Configuration: High Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 11V ~ 45V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 625mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-36-12 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
Produkt ist nicht verfügbar |
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T830N14TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1500A DO200AB Packaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 844 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 1.8 kV |
Produkt ist nicht verfügbar |
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PXC1331CPNG003XTMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER PG-VQFN-4 Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY4521 | Infineon Technologies |
Description: DEVELOPMENT KIT Packaging: Bulk Function: USB Type-C® Type: Interface Utilized IC / Part: CCG2 Supplied Contents: Board(s), Cable(s), Power Supply Part Status: Active |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH4255DTRPBF/BKN | Infineon Technologies | Description: IRFH4255DTRPBF/BKN |
auf Bestellung 1229 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFHM4231TRPBF/BKN | Infineon Technologies | Description: IRFHM4231TRPBF/BKN |
auf Bestellung 404 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS 16-02W E6327 | Infineon Technologies | Description: DIODE GEN PURP 80V 200MA SCD80-2 |
Produkt ist nicht verfügbar |
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IPS65R400CEAKMA1 | Infineon Technologies |
Description: CONSUMER Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V Power Dissipation (Max): 118W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R145CFD7AAKSA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS PG-TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
Produkt ist nicht verfügbar |
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IDDD08G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 24A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 401pF @ 1V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 27 µA @ 420 V |
Produkt ist nicht verfügbar |
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IDDD08G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 24A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 401pF @ 1V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 27 µA @ 420 V |
auf Bestellung 1960 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD12G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 34A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 594pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 40 µA @ 420 V |
Produkt ist nicht verfügbar |
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IDDD12G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 34A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 594pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 40 µA @ 420 V |
auf Bestellung 184 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD20G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 51A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 970pF @ 1V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 67 µA @ 420 V |
Produkt ist nicht verfügbar |
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IDDD20G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 51A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 970pF @ 1V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 67 µA @ 420 V |
auf Bestellung 1398 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 13A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 205pF @ 1V, 1MHz Current - Average Rectified (Io): 13A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 14 µA @ 420 V |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 13A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 205pF @ 1V, 1MHz Current - Average Rectified (Io): 13A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 14 µA @ 420 V |
auf Bestellung 4425 Stücke: Lieferzeit 10-14 Tag (e) |
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S70GL02GP11FAIR23 | Infineon Technologies |
Description: IC FLASH 2GBIT PARALLEL 64FBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Obsolete Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256M x 8, 128M x 16 |
Produkt ist nicht verfügbar |
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P2000D45X168HPSA1 | Infineon Technologies |
Description: PRESS PACK IGBT BG-P16826K-1 Packaging: Tray Input: Standard Configuration: Single NTC Thermistor: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BCR430UXTSA2 | Infineon Technologies |
Description: IC LED DRV LIN PWM 100MA SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Voltage - Output: 42V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: LED Lighting Current - Output / Channel: 100mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: PG-SOT23-6-1 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 42V Part Status: Active |
auf Bestellung 14757 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB50N10S3L16ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPB50N10S3L16ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPG20N10S436AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 16µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 65000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC016N06NSSCATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-WSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 234A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 95µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V |
Produkt ist nicht verfügbar |
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BGM7LLHM4L12E6327XTSA1 | Infineon Technologies |
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12 Packaging: Bulk Package / Case: 12-XFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 700MHz ~ 2.7GHz RF Type: LTE Voltage - Supply: 1.5V ~ 3.3V Gain: 13dB Current - Supply: 4.5mA Supplier Device Package: TSLP-12-4 Part Status: Obsolete |
auf Bestellung 682500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB47N10S33ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 47A TO263-3 |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFR1010Z | Infineon Technologies |
Description: AUIRFR1010 - 55V-60V N-CHANNEL A Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D-PAK (TO-252AA) Part Status: Active Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
Produkt ist nicht verfügbar |
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PXE1110ADM-G001 | Infineon Technologies | Description: IC CONTROLLER |
Produkt ist nicht verfügbar |
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SPD04P10PGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 4A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
Produkt ist nicht verfügbar |
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SPD04P10PGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 4A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
Produkt ist nicht verfügbar |
AUIRB24427STR |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.86 EUR |
10+ | 5.26 EUR |
25+ | 4.97 EUR |
100+ | 4.31 EUR |
250+ | 4.09 EUR |
500+ | 3.67 EUR |
1000+ | 3.09 EUR |
IRHNA57260SE |
Hersteller: Infineon Technologies
Description: IRHNA57260SE
Description: IRHNA57260SE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)1ED3123MC12HXUMA1 |
Hersteller: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 13.5A, 14A
Technology: Magnetic Coupling
Current - Output High, Low: 13.5A, 14A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 13.5A, 14A
Technology: Magnetic Coupling
Current - Output High, Low: 13.5A, 14A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.83 EUR |
2000+ | 2.69 EUR |
1ED3123MC12HXUMA1 |
Hersteller: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 13.5A, 14A
Technology: Magnetic Coupling
Current - Output High, Low: 13.5A, 14A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 13.5A, 14A
Technology: Magnetic Coupling
Current - Output High, Low: 13.5A, 14A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 3740 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.35 EUR |
10+ | 4.81 EUR |
25+ | 4.55 EUR |
100+ | 3.94 EUR |
250+ | 3.74 EUR |
500+ | 3.36 EUR |
BGSF18DM20E6327XUMA1138 |
Produkt ist nicht verfügbar
IMIC32V06X6SA1 |
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Part Status: Obsolete
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
IMIC32V05X6SA1 |
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Part Status: Obsolete
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
TDA88240AUMA1 |
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-30
Description: IFX POWERSTAGE/DRIVER PG-IQFN-30
Produkt ist nicht verfügbar
1ED3120MC12HXUMA1 |
Hersteller: Infineon Technologies
Description: DGTL ISO 8KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGTL ISO 8KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 909 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.66 EUR |
10+ | 4.19 EUR |
25+ | 3.96 EUR |
100+ | 3.43 EUR |
250+ | 3.26 EUR |
500+ | 2.92 EUR |
1ED3131MU12HXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.28 EUR |
1ED3131MU12HXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.23 EUR |
10+ | 4.1 EUR |
25+ | 3.54 EUR |
100+ | 2.92 EUR |
250+ | 2.62 EUR |
500+ | 2.43 EUR |
1ED3121MU12HXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.37 EUR |
1ED3121MU12HXUMA1 |
Hersteller: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 1386 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.82 EUR |
10+ | 4.33 EUR |
25+ | 4.09 EUR |
100+ | 3.48 EUR |
250+ | 3.27 EUR |
500+ | 2.86 EUR |
TLE75602EMHXUMA1 |
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
TLE75602EMDXUMA1 |
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
SAH-XC2237M-104F80LAAHXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 16/32BT 832KB FLSH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 110°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 16/32BT 832KB FLSH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 110°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAK-XC164CM-4F20FAA |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 32KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Part Status: Active
Number of I/O: 47
Description: IC MCU 16BIT 32KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Part Status: Active
Number of I/O: 47
Produkt ist nicht verfügbar
SAK-XC888C-6FFI5VAC |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 24KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PSB2132HV2.2 |
Hersteller: Infineon Technologies
Description: SICOFI-TE TWO CHANNEL CODEC
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 18mA
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 2
Power (Watts): 90 mW
Description: SICOFI-TE TWO CHANNEL CODEC
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 18mA
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 2
Power (Watts): 90 mW
auf Bestellung 33825 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 8.85 EUR |
TLE9832QXXUMA4 |
Hersteller: Infineon Technologies
Description: TLE9832 - MICROCONTROLLER WITH L
Description: TLE9832 - MICROCONTROLLER WITH L
Produkt ist nicht verfügbar
TLE9832QVXUMA3 |
Hersteller: Infineon Technologies
Description: TLE9832 - SMART LIN-BASED RELAY
Description: TLE9832 - SMART LIN-BASED RELAY
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)CY7C1480BV33-200AXC |
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 113.87 EUR |
XC2297H136F80LABKXUMA2 |
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 1.088MB FL 176QFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 1.088MB FL 176QFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TLE49681LHALA1 |
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.55 EUR |
10+ | 1.91 EUR |
25+ | 1.53 EUR |
100+ | 1.4 EUR |
500+ | 1.18 EUR |
1000+ | 1.05 EUR |
TLE49681LHALA1 |
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLE49452LHALA1 |
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±3mT Trip, ±6mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±3mT Trip, ±6mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
Produkt ist nicht verfügbar
FF600R12ME7B11BPSA2 |
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-741
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 92 nF @ 25 V
Description: MEDIUM POWER ECONO AG-ECONOD-741
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 92 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 445.23 EUR |
1ED3131MC12HXUMA1 |
Hersteller: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.37 EUR |
1ED3131MC12HXUMA1 |
Hersteller: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.49 EUR |
10+ | 4.03 EUR |
25+ | 3.81 EUR |
100+ | 3.3 EUR |
250+ | 3.14 EUR |
500+ | 2.81 EUR |
STT1900N16P55XPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE POWERBLOCK PS55-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
Description: SCR MODULE POWERBLOCK PS55-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
BTS4880R |
Hersteller: Infineon Technologies
Description: BTS4880 - PROFET - SMART HIGH SI
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: BTS4880 - PROFET - SMART HIGH SI
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
T830N14TOFXPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
PXC1331CPNG003XTMA1 |
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 4.32 EUR |
CY4521 |
Hersteller: Infineon Technologies
Description: DEVELOPMENT KIT
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Part Status: Active
Description: DEVELOPMENT KIT
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 135.27 EUR |
IRFH4255DTRPBF/BKN |
Hersteller: Infineon Technologies
Description: IRFH4255DTRPBF/BKN
Description: IRFH4255DTRPBF/BKN
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)IRFHM4231TRPBF/BKN |
Hersteller: Infineon Technologies
Description: IRFHM4231TRPBF/BKN
Description: IRFHM4231TRPBF/BKN
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)BAS 16-02W E6327 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 200MA SCD80-2
Description: DIODE GEN PURP 80V 200MA SCD80-2
Produkt ist nicht verfügbar
IPS65R400CEAKMA1 |
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
567+ | 0.84 EUR |
IPP65R145CFD7AAKSA1 |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
IDDD08G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 24A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Description: DIODE SIL CARB 650V 24A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Produkt ist nicht verfügbar
IDDD08G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Description: DIODE SIL CARB 650V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.5 EUR |
10+ | 2.94 EUR |
100+ | 2.38 EUR |
500+ | 2.32 EUR |
IDDD12G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 34A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIL CARB 650V 34A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Produkt ist nicht verfügbar
IDDD12G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 34A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIL CARB 650V 34A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.5 EUR |
10+ | 6.29 EUR |
100+ | 5.09 EUR |
IDDD20G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 51A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Description: DIODE SIL CARB 650V 51A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Produkt ist nicht verfügbar
IDDD20G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 51A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Description: DIODE SIL CARB 650V 51A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
auf Bestellung 1398 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.83 EUR |
10+ | 6.72 EUR |
100+ | 5.8 EUR |
IDDD04G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 13A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Description: DIODE SIL CARB 650V 13A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1700+ | 1.49 EUR |
IDDD04G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 13A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Description: DIODE SIL CARB 650V 13A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
auf Bestellung 4425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.44 EUR |
10+ | 2.88 EUR |
100+ | 1.98 EUR |
500+ | 1.6 EUR |
S70GL02GP11FAIR23 |
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
P2000D45X168HPSA1 |
Hersteller: Infineon Technologies
Description: PRESS PACK IGBT BG-P16826K-1
Packaging: Tray
Input: Standard
Configuration: Single
NTC Thermistor: No
Part Status: Obsolete
Description: PRESS PACK IGBT BG-P16826K-1
Packaging: Tray
Input: Standard
Configuration: Single
NTC Thermistor: No
Part Status: Obsolete
Produkt ist nicht verfügbar
BCR430UXTSA2 |
Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
auf Bestellung 14757 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
32+ | 0.55 EUR |
35+ | 0.51 EUR |
100+ | 0.41 EUR |
250+ | 0.38 EUR |
500+ | 0.32 EUR |
1000+ | 0.25 EUR |
IPB50N10S3L16ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Produkt ist nicht verfügbar
IPB50N10S3L16ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Produkt ist nicht verfügbar
IPG20N10S436AATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.02 EUR |
10000+ | 0.97 EUR |
BSC016N06NSSCATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Produkt ist nicht verfügbar
BGM7LLHM4L12E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
auf Bestellung 682500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
257+ | 1.95 EUR |
IPB47N10S33ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO263-3
Description: MOSFET N-CH 100V 47A TO263-3
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
311+ | 1.62 EUR |
AUIRFR1010Z |
Hersteller: Infineon Technologies
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
PXE1110ADM-G001 |
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Description: IC CONTROLLER
Produkt ist nicht verfügbar
SPD04P10PGBTMA1 |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Produkt ist nicht verfügbar
SPD04P10PGBTMA1 |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Produkt ist nicht verfügbar