IRF6716MTRPBF

IRF6716MTRPBF Infineon Technologies


IRSDS10736-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: IRF6716 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
auf Bestellung 56952 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
205+2.59 EUR
Mindestbestellmenge: 205
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Technische Details IRF6716MTRPBF Infineon Technologies

Description: IRF6716 - 12V-300V N-CHANNEL POW, Packaging: Bulk, Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Power Dissipation (Max): 3.6W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V.

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IRF6716MTRPBF IRF6716MTRPBF Hersteller : INFINEON TECHNOLOGIES irf6716mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
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IRF6716MTRPBF IRF6716MTRPBF Hersteller : Infineon Technologies Infineon_IRF6716M_DataSheet_v01_01_EN-3362918.pdf MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
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IRF6716MTRPBF IRF6716MTRPBF Hersteller : INFINEON TECHNOLOGIES irf6716mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar