Produkte > GOFORD SEMICONDUCTOR > Alle Produkte des Herstellers GOFORD SEMICONDUCTOR (891) > Seite 2 nach 15
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3401 | GOFORD Semiconductor |
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auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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3401 | GOFORD Semiconductor |
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auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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3401H | GOFORD Semiconductor | P-Channel Trench MOSFET |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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3401H | GOFORD Semiconductor | P-Channel Trench MOSFET |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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3415A | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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3415A | GOFORD Semiconductor |
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auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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3415A | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
auf Bestellung 6876 Stücke: Lieferzeit 10-14 Tag (e) |
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4435 | GOFORD Semiconductor |
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auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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4435 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V |
auf Bestellung 3725 Stücke: Lieferzeit 10-14 Tag (e) |
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4435 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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4435 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V |
Produkt ist nicht verfügbar |
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45P40 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V |
auf Bestellung 3449 Stücke: Lieferzeit 10-14 Tag (e) |
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45P40 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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45P40 | GOFORD Semiconductor |
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auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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5N20A | GOFORD Semiconductor |
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auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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5N20A | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V Drive Voltage (Max Rds On, Min Rds On): 10V |
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5N20A | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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5N20A | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 747 Stücke: Lieferzeit 10-14 Tag (e) |
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5N60 | GOFORD Semiconductor | 600V N-Channel MOSFET |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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5P40 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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5P40 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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5P40 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V |
auf Bestellung 6824 Stücke: Lieferzeit 10-14 Tag (e) |
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60N06 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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60N06 | GOFORD Semiconductor |
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auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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60N06 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V |
Produkt ist nicht verfügbar |
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60N06 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V |
auf Bestellung 1191 Stücke: Lieferzeit 10-14 Tag (e) |
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630A | GOFORD Semiconductor |
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auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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630A | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V |
Produkt ist nicht verfügbar |
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630A | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V |
auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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630AT | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V |
auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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6706A | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V FET Feature: Standard Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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6706A | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V FET Feature: Standard Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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6706A | GOFORD Semiconductor |
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auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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9926 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V |
Produkt ist nicht verfügbar |
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9926 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V |
auf Bestellung 3915 Stücke: Lieferzeit 10-14 Tag (e) |
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G01N20LE | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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G01N20LE | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V |
Produkt ist nicht verfügbar |
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G01N20LE | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V |
auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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G020N03T | GOFORD Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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G020N03T | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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G020N03T | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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G02P06 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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G02P06 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V |
auf Bestellung 124 Stücke: Lieferzeit 10-14 Tag (e) |
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G02P06 | GOFORD Semiconductor |
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auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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G030N06M | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 223A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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G030N06M | GOFORD Semiconductor |
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auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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G030N06M | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 223A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V |
Produkt ist nicht verfügbar |
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G030N06T | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 223A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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G030N06T | GOFORD Semiconductor |
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auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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G030N06T | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 223A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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G040P04M | GOFORD Semiconductor |
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auf Bestellung 49600 Stücke: Lieferzeit 14-21 Tag (e) |
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G040P04M | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ -15A,- 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ -20 V |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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G040P04M | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 222A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V |
Produkt ist nicht verfügbar |
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G040P04M | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 222A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V |
auf Bestellung 704 Stücke: Lieferzeit 10-14 Tag (e) |
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G040P04T | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 222A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15087 pF @ 20 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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G040P04T | GOFORD Semiconductor |
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auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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G048N04T | GOFORD Semiconductor | G048N04T |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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G04P10HE | GOFORD Semiconductor |
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auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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G04P10HE | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V |
Produkt ist nicht verfügbar |
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G04P10HE | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V |
auf Bestellung 14979 Stücke: Lieferzeit 10-14 Tag (e) |
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3401 |
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Hersteller: GOFORD Semiconductor
P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.052 EUR |
3401 |
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Hersteller: GOFORD Semiconductor
P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.053 EUR |
15000+ | 0.047 EUR |
30000+ | 0.041 EUR |
50000+ | 0.037 EUR |
3401H |
Hersteller: GOFORD Semiconductor
P-Channel Trench MOSFET
P-Channel Trench MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.06 EUR |
15000+ | 0.053 EUR |
30000+ | 0.046 EUR |
3401H |
Hersteller: GOFORD Semiconductor
P-Channel Trench MOSFET
P-Channel Trench MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.06 EUR |
15000+ | 0.053 EUR |
30000+ | 0.046 EUR |
3415A |
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Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Description: P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.12 EUR |
3415A |
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Hersteller: GOFORD Semiconductor
P-CH -20V -4A 45mOhm/MAX at -4.5V, 60mOhm/MAX at -2.5V, SOT-23
P-CH -20V -4A 45mOhm/MAX at -4.5V, 60mOhm/MAX at -2.5V, SOT-23
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.06 EUR |
3415A |
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Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Description: P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 6876 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
40+ | 0.44 EUR |
100+ | 0.22 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
4435 |
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Hersteller: GOFORD Semiconductor
P-CH,-30V,-11A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 33mOhm at -4.5V,VTH -1V to -2.5V ,SOP-8
P-CH,-30V,-11A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 33mOhm at -4.5V,VTH -1V to -2.5V ,SOP-8
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.2 EUR |
16000+ | 0.18 EUR |
32000+ | 0.16 EUR |
4435 |
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Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<33
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<33
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3725 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.86 EUR |
24+ | 0.74 EUR |
100+ | 0.52 EUR |
500+ | 0.4 EUR |
1000+ | 0.33 EUR |
2000+ | 0.29 EUR |
4435 |
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Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET P-CH 30V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.21 EUR |
16000+ | 0.2 EUR |
32000+ | 0.19 EUR |
4435 |
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Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<33
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<33
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Produkt ist nicht verfügbar
45P40 |
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Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
16+ | 1.16 EUR |
100+ | 0.91 EUR |
500+ | 0.77 EUR |
1000+ | 0.62 EUR |
45P40 |
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Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.59 EUR |
5000+ | 0.56 EUR |
45P40 |
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Hersteller: GOFORD Semiconductor
P-CH -40V -45A 14mOhm/MAX at -10V TO-252
P-CH -40V -45A 14mOhm/MAX at -10V TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.33 EUR |
5N20A |
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Hersteller: GOFORD Semiconductor
Fast Switching MOSFET
Fast Switching MOSFET
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.29 EUR |
15000+ | 0.26 EUR |
5N20A |
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Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
5N20A |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 200V 5A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 200V 5A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.31 EUR |
15000+ | 0.29 EUR |
30000+ | 0.26 EUR |
5N20A |
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Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.09 EUR |
20+ | 0.92 EUR |
100+ | 0.64 EUR |
500+ | 0.5 EUR |
5N60 |
Hersteller: GOFORD Semiconductor
600V N-Channel MOSFET
600V N-Channel MOSFET
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.3 EUR |
5P40 |
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Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 5.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Description: MOSFET P-CH 40V 5.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.076 EUR |
15000+ | 0.07 EUR |
30000+ | 0.063 EUR |
5P40 |
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Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Description: P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
5P40 |
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Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Description: P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 6824 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
34+ | 0.52 EUR |
100+ | 0.26 EUR |
500+ | 0.23 EUR |
1000+ | 0.18 EUR |
60N06 |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.29 EUR |
15000+ | 0.27 EUR |
60N06 |
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Hersteller: GOFORD Semiconductor
N-CH,60V,60A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1V to 2V,TO-252
N-CH,60V,60A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1V to 2V,TO-252
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.28 EUR |
15000+ | 0.25 EUR |
30000+ | 0.21 EUR |
60N06 |
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Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
Produkt ist nicht verfügbar
60N06 |
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Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
auf Bestellung 1191 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.16 EUR |
18+ | 1.01 EUR |
100+ | 0.7 EUR |
500+ | 0.58 EUR |
1000+ | 0.5 EUR |
630A |
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Hersteller: GOFORD Semiconductor
Trans MOSFET N-CH Si 200V 11A Automotive 3-Pin(2+Tab) TO-252
Trans MOSFET N-CH Si 200V 11A Automotive 3-Pin(2+Tab) TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.4 EUR |
15000+ | 0.36 EUR |
30000+ | 0.33 EUR |
630A |
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Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<280M@10V,VTH1V~3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Description: N200V,RD(MAX)<280M@10V,VTH1V~3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Produkt ist nicht verfügbar
630A |
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Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<280M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Description: N200V,RD(MAX)<280M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.3 EUR |
16+ | 1.12 EUR |
100+ | 0.78 EUR |
500+ | 0.65 EUR |
1000+ | 0.55 EUR |
630AT |
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Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<250M@10V,RD(MAX)<3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Description: N200V,RD(MAX)<250M@10V,RD(MAX)<3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.53 EUR |
14+ | 1.33 EUR |
6706A |
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Hersteller: Goford Semiconductor
Description: N/P30V,6.5A/-5A,RD(MAX)<20M/45M@
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
FET Feature: Standard
Supplier Device Package: 8-SOP
Part Status: Active
Description: N/P30V,6.5A/-5A,RD(MAX)<20M/45M@
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
FET Feature: Standard
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.24 EUR |
6706A |
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Hersteller: Goford Semiconductor
Description: N/P30V,6.5A/-5A,RD(MAX)<20M/45M@
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
FET Feature: Standard
Supplier Device Package: 8-SOP
Part Status: Active
Description: N/P30V,6.5A/-5A,RD(MAX)<20M/45M@
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
FET Feature: Standard
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.84 EUR |
26+ | 0.68 EUR |
100+ | 0.46 EUR |
500+ | 0.35 EUR |
1000+ | 0.26 EUR |
2000+ | 0.24 EUR |
6706A |
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Hersteller: GOFORD Semiconductor
N-P CH 30V/-30V 6.5A/-5A 40mOhm/90mOhm MAX at 4.5V SOP-8
N-P CH 30V/-30V 6.5A/-5A 40mOhm/90mOhm MAX at 4.5V SOP-8
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.13 EUR |
9926 |
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Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
9926 |
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Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
auf Bestellung 3915 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
30+ | 0.6 EUR |
100+ | 0.36 EUR |
500+ | 0.33 EUR |
1000+ | 0.23 EUR |
2000+ | 0.21 EUR |
G01N20LE |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 200V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH ESD 200V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
15000+ | 0.13 EUR |
30000+ | 0.11 EUR |
G01N20LE |
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Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Produkt ist nicht verfügbar
G01N20LE |
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Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
34+ | 0.52 EUR |
100+ | 0.31 EUR |
500+ | 0.29 EUR |
G020N03T |
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Hersteller: GOFORD Semiconductor
G020N03T
G020N03T
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
233+ | 0.66 EUR |
G020N03T |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 140A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
Description: MOSFET N-CH 30V 140A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.16 EUR |
10+ | 1.77 EUR |
G020N03T |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 140A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
Description: MOSFET N-CH 30V 140A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.7 EUR |
G02P06 |
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Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
G02P06 |
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Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
38+ | 0.47 EUR |
100+ | 0.24 EUR |
G02P06 |
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Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.06 EUR |
15000+ | 0.053 EUR |
30000+ | 0.045 EUR |
G030N06M |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
Description: MOSFET N-CH 60V 223A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.71 EUR |
G030N06M |
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Hersteller: GOFORD Semiconductor
G030N06M
G030N06M
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.22 EUR |
G030N06M |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
Description: MOSFET N-CH 60V 223A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
Produkt ist nicht verfügbar
G030N06T |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.25 EUR |
G030N06T |
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Hersteller: GOFORD Semiconductor
G030N06T
G030N06T
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
130+ | 1.18 EUR |
G030N06T |
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Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.43 EUR |
10+ | 2.84 EUR |
G040P04M |
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Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 49600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.24 EUR |
15200+ | 1.1 EUR |
30400+ | 0.95 EUR |
G040P04M |
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Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 180A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ -15A,- 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ -20 V
Description: MOSFET P-CH 40V 180A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ -15A,- 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ -20 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.31 EUR |
8000+ | 1.26 EUR |
16000+ | 1.21 EUR |
32000+ | 1.09 EUR |
G040P04M |
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Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 222A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V
Description: MOSFET P-CH 40V 222A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V
Produkt ist nicht verfügbar
G040P04M |
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Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 222A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V
Description: MOSFET P-CH 40V 222A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V
auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.1 EUR |
10+ | 2.58 EUR |
100+ | 2.05 EUR |
500+ | 1.74 EUR |
G040P04T |
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Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 222A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15087 pF @ 20 V
Description: MOSFET P-CH 40V 222A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15087 pF @ 20 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.96 EUR |
G040P04T |
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Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
130+ | 1.18 EUR |
G048N04T |
Hersteller: GOFORD Semiconductor
G048N04T
G048N04T
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
233+ | 0.66 EUR |
G04P10HE |
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Hersteller: GOFORD Semiconductor
P-CH,-100V,-4A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.8V, SOT-223
P-CH,-100V,-4A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.8V, SOT-223
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.21 EUR |
15000+ | 0.19 EUR |
30000+ | 0.16 EUR |
G04P10HE |
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Hersteller: Goford Semiconductor
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
Produkt ist nicht verfügbar
G04P10HE |
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Hersteller: Goford Semiconductor
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
auf Bestellung 14979 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
21+ | 0.84 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.38 EUR |