Produkte > GOFORD SEMICONDUCTOR > Alle Produkte des Herstellers GOFORD SEMICONDUCTOR (891) > Seite 2 nach 15

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
3401 GOFORD Semiconductor GOFORD-3401.pdf P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.052 EUR
Mindestbestellmenge: 3000
3401 GOFORD Semiconductor GOFORD-3401.pdf P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.053 EUR
15000+ 0.047 EUR
30000+ 0.041 EUR
50000+ 0.037 EUR
Mindestbestellmenge: 3000
3401H GOFORD Semiconductor P-Channel Trench MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.06 EUR
15000+ 0.053 EUR
30000+ 0.046 EUR
Mindestbestellmenge: 3000
3401H GOFORD Semiconductor P-Channel Trench MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.06 EUR
15000+ 0.053 EUR
30000+ 0.046 EUR
Mindestbestellmenge: 3000
3415A 3415A Goford Semiconductor GOFORD-3415A.pdf Description: P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 3000
3415A GOFORD Semiconductor GOFORD-3415A.pdf P-CH -20V -4A 45mOhm/MAX at -4.5V, 60mOhm/MAX at -2.5V, SOT-23
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.06 EUR
Mindestbestellmenge: 3000
3415A 3415A Goford Semiconductor GOFORD-3415A.pdf Description: P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 6876 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+ 0.44 EUR
100+ 0.22 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 28
4435 GOFORD Semiconductor GOFORD-4435.pdf P-CH,-30V,-11A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 33mOhm at -4.5V,VTH -1V to -2.5V ,SOP-8
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.2 EUR
16000+ 0.18 EUR
32000+ 0.16 EUR
Mindestbestellmenge: 4000
4435 4435 Goford Semiconductor GOFORD-4435.pdf Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<33
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3725 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
2000+ 0.29 EUR
Mindestbestellmenge: 21
4435 4435 Goford Semiconductor GOFORD-4435.pdf Description: MOSFET P-CH 30V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.21 EUR
16000+ 0.2 EUR
32000+ 0.19 EUR
Mindestbestellmenge: 4000
4435 4435 Goford Semiconductor GOFORD-4435.pdf Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<33
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Produkt ist nicht verfügbar
45P40 45P40 Goford Semiconductor GOFORD-45P40.pdf Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
16+ 1.16 EUR
100+ 0.91 EUR
500+ 0.77 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 13
45P40 45P40 Goford Semiconductor GOFORD-45P40.pdf Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.59 EUR
5000+ 0.56 EUR
Mindestbestellmenge: 2500
45P40 GOFORD Semiconductor GOFORD-45P40.pdf P-CH -40V -45A 14mOhm/MAX at -10V TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.33 EUR
Mindestbestellmenge: 2500
5N20A GOFORD Semiconductor GOFORD-5N20A.pdf Fast Switching MOSFET
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.29 EUR
15000+ 0.26 EUR
Mindestbestellmenge: 2500
5N20A 5N20A Goford Semiconductor GOFORD-5N20A.pdf Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
5N20A 5N20A Goford Semiconductor GOFORD-5N20A.pdf Description: MOSFET N-CH 200V 5A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.31 EUR
15000+ 0.29 EUR
30000+ 0.26 EUR
Mindestbestellmenge: 2500
5N20A 5N20A Goford Semiconductor GOFORD-5N20A.pdf Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
20+ 0.92 EUR
100+ 0.64 EUR
500+ 0.5 EUR
Mindestbestellmenge: 17
5N60 GOFORD Semiconductor 600V N-Channel MOSFET
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.3 EUR
Mindestbestellmenge: 1000
5P40 5P40 Goford Semiconductor GOFORD-5P40.pdf Description: MOSFET P-CH 40V 5.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.076 EUR
15000+ 0.07 EUR
30000+ 0.063 EUR
Mindestbestellmenge: 3000
5P40 5P40 Goford Semiconductor products-detail.php?ProId=64 Description: P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
5P40 5P40 Goford Semiconductor products-detail.php?ProId=64 Description: P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 6824 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 24
60N06 60N06 Goford Semiconductor GOFORD-60N06.pdf Description: MOSFET N-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.29 EUR
15000+ 0.27 EUR
Mindestbestellmenge: 2500
60N06 GOFORD Semiconductor 60N06.pdf GOFORD-60N06.pdf N-CH,60V,60A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1V to 2V,TO-252
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.28 EUR
15000+ 0.25 EUR
30000+ 0.21 EUR
Mindestbestellmenge: 2500
60N06 60N06 Goford Semiconductor 60N06.pdf Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
Produkt ist nicht verfügbar
60N06 60N06 Goford Semiconductor 60N06.pdf Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
auf Bestellung 1191 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+ 1.01 EUR
100+ 0.7 EUR
500+ 0.58 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 16
630A GOFORD Semiconductor GOFORD-630A.pdf Trans MOSFET N-CH Si 200V 11A Automotive 3-Pin(2+Tab) TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.4 EUR
15000+ 0.36 EUR
30000+ 0.33 EUR
Mindestbestellmenge: 2500
630A 630A Goford Semiconductor GOFORD-630A.pdf Description: N200V,RD(MAX)<280M@10V,VTH1V~3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Produkt ist nicht verfügbar
630A 630A Goford Semiconductor GOFORD-630A.pdf Description: N200V,RD(MAX)<280M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.3 EUR
16+ 1.12 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 14
630AT 630AT Goford Semiconductor GOFORD-630AT.pdf Description: N200V,RD(MAX)<250M@10V,RD(MAX)<3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
14+ 1.33 EUR
Mindestbestellmenge: 12
6706A 6706A Goford Semiconductor GOFORD-6706A.pdf Description: N/P30V,6.5A/-5A,RD(MAX)<20M/45M@
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
FET Feature: Standard
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.24 EUR
Mindestbestellmenge: 4000
6706A 6706A Goford Semiconductor GOFORD-6706A.pdf Description: N/P30V,6.5A/-5A,RD(MAX)<20M/45M@
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
FET Feature: Standard
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
26+ 0.68 EUR
100+ 0.46 EUR
500+ 0.35 EUR
1000+ 0.26 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 21
6706A GOFORD Semiconductor GOFORD-6706A.pdf N-P CH 30V/-30V 6.5A/-5A 40mOhm/90mOhm MAX at 4.5V SOP-8
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
9926 9926 Goford Semiconductor GOFORD-9926.pdf Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
9926 9926 Goford Semiconductor GOFORD-9926.pdf Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
auf Bestellung 3915 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 23
G01N20LE G01N20LE Goford Semiconductor GOFORD-G01N20LE.pdf Description: MOSFET N-CH ESD 200V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
15000+ 0.13 EUR
30000+ 0.11 EUR
Mindestbestellmenge: 3000
G01N20LE G01N20LE Goford Semiconductor GOFORD-G01N20LE.pdf Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Produkt ist nicht verfügbar
G01N20LE G01N20LE Goford Semiconductor GOFORD-G01N20LE.pdf Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
34+ 0.52 EUR
100+ 0.31 EUR
500+ 0.29 EUR
Mindestbestellmenge: 27
G020N03T GOFORD Semiconductor GOFORD-G020N03T.pdf G020N03T
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
233+0.66 EUR
Mindestbestellmenge: 233
G020N03T G020N03T Goford Semiconductor GOFORD-G020N03T.pdf Description: MOSFET N-CH 30V 140A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
10+ 1.77 EUR
Mindestbestellmenge: 9
G020N03T G020N03T Goford Semiconductor GOFORD-G020N03T.pdf Description: MOSFET N-CH 30V 140A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.7 EUR
Mindestbestellmenge: 1000
G02P06 G02P06 Goford Semiconductor GOFROD-G02P06.pdf Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+ 0.14 EUR
Mindestbestellmenge: 3000
G02P06 G02P06 Goford Semiconductor GOFROD-G02P06.pdf Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
Mindestbestellmenge: 27
G02P06 GOFORD Semiconductor GOFROD-G02P06.pdf P-Channel Enhancement Mode Power MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.06 EUR
15000+ 0.053 EUR
30000+ 0.045 EUR
Mindestbestellmenge: 3000
G030N06M G030N06M Goford Semiconductor G030N06M.pdf Description: MOSFET N-CH 60V 223A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.71 EUR
Mindestbestellmenge: 800
G030N06M GOFORD Semiconductor G030N06M.pdf G030N06M
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.22 EUR
Mindestbestellmenge: 800
G030N06M G030N06M Goford Semiconductor G030N06M.pdf Description: MOSFET N-CH 60V 223A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
Produkt ist nicht verfügbar
G030N06T G030N06T Goford Semiconductor GOFORD-G030N06T.pdf Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.25 EUR
Mindestbestellmenge: 1000
G030N06T GOFORD Semiconductor G030N06T.pdf GOFORD-G030N06T.pdf G030N06T
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
130+1.18 EUR
Mindestbestellmenge: 130
G030N06T G030N06T Goford Semiconductor G030N06T.pdf Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
10+ 2.84 EUR
Mindestbestellmenge: 6
G040P04M GOFORD Semiconductor GOFORD-G040P04M.pdf P-Channel Enhancement Mode Power MOSFET
auf Bestellung 49600 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.24 EUR
15200+ 1.1 EUR
30400+ 0.95 EUR
Mindestbestellmenge: 800
G040P04M G040P04M Goford Semiconductor GOFORD-G040P04M.pdf Description: MOSFET P-CH 40V 180A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ -15A,- 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ -20 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.31 EUR
8000+ 1.26 EUR
16000+ 1.21 EUR
32000+ 1.09 EUR
Mindestbestellmenge: 800
G040P04M G040P04M Goford Semiconductor GOFORD-G040P04M.pdf Description: MOSFET P-CH 40V 222A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V
Produkt ist nicht verfügbar
G040P04M G040P04M Goford Semiconductor GOFORD-G040P04M.pdf Description: MOSFET P-CH 40V 222A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V
auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
10+ 2.58 EUR
100+ 2.05 EUR
500+ 1.74 EUR
Mindestbestellmenge: 6
G040P04T G040P04T Goford Semiconductor GOFORD-G040P04T.pdf Description: MOSFET P-CH 40V 222A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15087 pF @ 20 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
Mindestbestellmenge: 6
G040P04T GOFORD Semiconductor GOFORD-G040P04T.pdf P-Channel Enhancement Mode Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
130+1.18 EUR
Mindestbestellmenge: 130
G048N04T GOFORD Semiconductor G048N04T
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
233+0.66 EUR
Mindestbestellmenge: 233
G04P10HE GOFORD Semiconductor GOFORD-G04P10HE.pdf P-CH,-100V,-4A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.8V, SOT-223
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.21 EUR
15000+ 0.19 EUR
30000+ 0.16 EUR
Mindestbestellmenge: 2500
G04P10HE G04P10HE Goford Semiconductor GOFORD-G04P10HE.pdf Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
Produkt ist nicht verfügbar
G04P10HE G04P10HE Goford Semiconductor GOFORD-G04P10HE.pdf Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
auf Bestellung 14979 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+ 0.84 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
3401 GOFORD-3401.pdf
Hersteller: GOFORD Semiconductor
P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.052 EUR
Mindestbestellmenge: 3000
3401 GOFORD-3401.pdf
Hersteller: GOFORD Semiconductor
P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.053 EUR
15000+ 0.047 EUR
30000+ 0.041 EUR
50000+ 0.037 EUR
Mindestbestellmenge: 3000
3401H
Hersteller: GOFORD Semiconductor
P-Channel Trench MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.06 EUR
15000+ 0.053 EUR
30000+ 0.046 EUR
Mindestbestellmenge: 3000
3401H
Hersteller: GOFORD Semiconductor
P-Channel Trench MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.06 EUR
15000+ 0.053 EUR
30000+ 0.046 EUR
Mindestbestellmenge: 3000
3415A GOFORD-3415A.pdf
3415A
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 3000
3415A GOFORD-3415A.pdf
Hersteller: GOFORD Semiconductor
P-CH -20V -4A 45mOhm/MAX at -4.5V, 60mOhm/MAX at -2.5V, SOT-23
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.06 EUR
Mindestbestellmenge: 3000
3415A GOFORD-3415A.pdf
3415A
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 6876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
40+ 0.44 EUR
100+ 0.22 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 28
4435 GOFORD-4435.pdf
Hersteller: GOFORD Semiconductor
P-CH,-30V,-11A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 33mOhm at -4.5V,VTH -1V to -2.5V ,SOP-8
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4000+0.2 EUR
16000+ 0.18 EUR
32000+ 0.16 EUR
Mindestbestellmenge: 4000
4435 GOFORD-4435.pdf
4435
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<33
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
2000+ 0.29 EUR
Mindestbestellmenge: 21
4435 GOFORD-4435.pdf
4435
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.21 EUR
16000+ 0.2 EUR
32000+ 0.19 EUR
Mindestbestellmenge: 4000
4435 GOFORD-4435.pdf
4435
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<33
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Produkt ist nicht verfügbar
45P40 GOFORD-45P40.pdf
45P40
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.43 EUR
16+ 1.16 EUR
100+ 0.91 EUR
500+ 0.77 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 13
45P40 GOFORD-45P40.pdf
45P40
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.59 EUR
5000+ 0.56 EUR
Mindestbestellmenge: 2500
45P40 GOFORD-45P40.pdf
Hersteller: GOFORD Semiconductor
P-CH -40V -45A 14mOhm/MAX at -10V TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.33 EUR
Mindestbestellmenge: 2500
5N20A GOFORD-5N20A.pdf
Hersteller: GOFORD Semiconductor
Fast Switching MOSFET
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.29 EUR
15000+ 0.26 EUR
Mindestbestellmenge: 2500
5N20A GOFORD-5N20A.pdf
5N20A
Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
5N20A GOFORD-5N20A.pdf
5N20A
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 200V 5A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.31 EUR
15000+ 0.29 EUR
30000+ 0.26 EUR
Mindestbestellmenge: 2500
5N20A GOFORD-5N20A.pdf
5N20A
Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.09 EUR
20+ 0.92 EUR
100+ 0.64 EUR
500+ 0.5 EUR
Mindestbestellmenge: 17
5N60
Hersteller: GOFORD Semiconductor
600V N-Channel MOSFET
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+0.3 EUR
Mindestbestellmenge: 1000
5P40 GOFORD-5P40.pdf
5P40
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 5.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.076 EUR
15000+ 0.07 EUR
30000+ 0.063 EUR
Mindestbestellmenge: 3000
5P40 products-detail.php?ProId=64
5P40
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
5P40 products-detail.php?ProId=64
5P40
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 6824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 24
60N06 GOFORD-60N06.pdf
60N06
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.29 EUR
15000+ 0.27 EUR
Mindestbestellmenge: 2500
60N06 60N06.pdf GOFORD-60N06.pdf
Hersteller: GOFORD Semiconductor
N-CH,60V,60A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1V to 2V,TO-252
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.28 EUR
15000+ 0.25 EUR
30000+ 0.21 EUR
Mindestbestellmenge: 2500
60N06 60N06.pdf
60N06
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
Produkt ist nicht verfügbar
60N06 60N06.pdf
60N06
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
auf Bestellung 1191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.01 EUR
100+ 0.7 EUR
500+ 0.58 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 16
630A GOFORD-630A.pdf
Hersteller: GOFORD Semiconductor
Trans MOSFET N-CH Si 200V 11A Automotive 3-Pin(2+Tab) TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.4 EUR
15000+ 0.36 EUR
30000+ 0.33 EUR
Mindestbestellmenge: 2500
630A GOFORD-630A.pdf
630A
Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<280M@10V,VTH1V~3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Produkt ist nicht verfügbar
630A GOFORD-630A.pdf
630A
Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<280M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.3 EUR
16+ 1.12 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 14
630AT GOFORD-630AT.pdf
630AT
Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<250M@10V,RD(MAX)<3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.53 EUR
14+ 1.33 EUR
Mindestbestellmenge: 12
6706A GOFORD-6706A.pdf
6706A
Hersteller: Goford Semiconductor
Description: N/P30V,6.5A/-5A,RD(MAX)<20M/45M@
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
FET Feature: Standard
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.24 EUR
Mindestbestellmenge: 4000
6706A GOFORD-6706A.pdf
6706A
Hersteller: Goford Semiconductor
Description: N/P30V,6.5A/-5A,RD(MAX)<20M/45M@
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
FET Feature: Standard
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
26+ 0.68 EUR
100+ 0.46 EUR
500+ 0.35 EUR
1000+ 0.26 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 21
6706A GOFORD-6706A.pdf
Hersteller: GOFORD Semiconductor
N-P CH 30V/-30V 6.5A/-5A 40mOhm/90mOhm MAX at 4.5V SOP-8
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4000+0.13 EUR
Mindestbestellmenge: 4000
9926 GOFORD-9926.pdf
9926
Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
9926 GOFORD-9926.pdf
9926
Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
auf Bestellung 3915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 23
G01N20LE GOFORD-G01N20LE.pdf
G01N20LE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 200V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
15000+ 0.13 EUR
30000+ 0.11 EUR
Mindestbestellmenge: 3000
G01N20LE GOFORD-G01N20LE.pdf
G01N20LE
Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Produkt ist nicht verfügbar
G01N20LE GOFORD-G01N20LE.pdf
G01N20LE
Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
34+ 0.52 EUR
100+ 0.31 EUR
500+ 0.29 EUR
Mindestbestellmenge: 27
G020N03T GOFORD-G020N03T.pdf
Hersteller: GOFORD Semiconductor
G020N03T
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
233+0.66 EUR
Mindestbestellmenge: 233
G020N03T GOFORD-G020N03T.pdf
G020N03T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 140A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.16 EUR
10+ 1.77 EUR
Mindestbestellmenge: 9
G020N03T GOFORD-G020N03T.pdf
G020N03T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 140A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6005 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.7 EUR
Mindestbestellmenge: 1000
G02P06 GOFROD-G02P06.pdf
G02P06
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
6000+ 0.14 EUR
Mindestbestellmenge: 3000
G02P06 GOFROD-G02P06.pdf
G02P06
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
Mindestbestellmenge: 27
G02P06 GOFROD-G02P06.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.06 EUR
15000+ 0.053 EUR
30000+ 0.045 EUR
Mindestbestellmenge: 3000
G030N06M G030N06M.pdf
G030N06M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.71 EUR
Mindestbestellmenge: 800
G030N06M G030N06M.pdf
Hersteller: GOFORD Semiconductor
G030N06M
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
800+1.22 EUR
Mindestbestellmenge: 800
G030N06M G030N06M.pdf
G030N06M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
Produkt ist nicht verfügbar
G030N06T GOFORD-G030N06T.pdf
G030N06T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.25 EUR
Mindestbestellmenge: 1000
G030N06T G030N06T.pdf GOFORD-G030N06T.pdf
Hersteller: GOFORD Semiconductor
G030N06T
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
130+1.18 EUR
Mindestbestellmenge: 130
G030N06T G030N06T.pdf
G030N06T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.43 EUR
10+ 2.84 EUR
Mindestbestellmenge: 6
G040P04M GOFORD-G040P04M.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 49600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
800+1.24 EUR
15200+ 1.1 EUR
30400+ 0.95 EUR
Mindestbestellmenge: 800
G040P04M GOFORD-G040P04M.pdf
G040P04M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 180A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ -15A,- 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ -20 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.31 EUR
8000+ 1.26 EUR
16000+ 1.21 EUR
32000+ 1.09 EUR
Mindestbestellmenge: 800
G040P04M GOFORD-G040P04M.pdf
G040P04M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 222A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V
Produkt ist nicht verfügbar
G040P04M GOFORD-G040P04M.pdf
G040P04M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 222A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 1A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14983 pF @ 20 V
auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.1 EUR
10+ 2.58 EUR
100+ 2.05 EUR
500+ 1.74 EUR
Mindestbestellmenge: 6
G040P04T GOFORD-G040P04T.pdf
G040P04T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 222A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15087 pF @ 20 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.96 EUR
Mindestbestellmenge: 6
G040P04T GOFORD-G040P04T.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
130+1.18 EUR
Mindestbestellmenge: 130
G048N04T
Hersteller: GOFORD Semiconductor
G048N04T
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
233+0.66 EUR
Mindestbestellmenge: 233
G04P10HE GOFORD-G04P10HE.pdf
Hersteller: GOFORD Semiconductor
P-CH,-100V,-4A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.8V, SOT-223
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.21 EUR
15000+ 0.19 EUR
30000+ 0.16 EUR
Mindestbestellmenge: 2500
G04P10HE GOFORD-G04P10HE.pdf
G04P10HE
Hersteller: Goford Semiconductor
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
Produkt ist nicht verfügbar
G04P10HE GOFORD-G04P10HE.pdf
G04P10HE
Hersteller: Goford Semiconductor
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
auf Bestellung 14979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.84 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15  [ Nächste Seite >> ]