5N20A Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.04 EUR |
20+ | 0.89 EUR |
100+ | 0.62 EUR |
500+ | 0.48 EUR |
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Technische Details 5N20A Goford Semiconductor
Description: N200V,RD(MAX).
Weitere Produktangebote 5N20A nach Preis ab 0.25 EUR bis 0.28 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
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5N20A | Hersteller : GOFORD Semiconductor | Fast Switching MOSFET |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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5N20A | Hersteller : Goford Semiconductor |
Description: N200V,RD(MAX)<650M@10V,VTH1V~3V, Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar |