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G030N06M Goford Semiconductor
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Description: MOSFET N-CH 60V 223A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.71 EUR |
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Technische Details G030N06M Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 223A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V.
Weitere Produktangebote G030N06M nach Preis ab 1.22 EUR bis 1.22 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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G030N06M | Hersteller : GOFORD Semiconductor |
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auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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G030N06M | Hersteller : Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 223A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V |
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