Produkte > GOFORD SEMICONDUCTOR > Alle Produkte des Herstellers GOFORD SEMICONDUCTOR (891) > Seite 1 nach 15
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
03N06 | GOFORD Semiconductor |
![]() |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
03N06 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
03N06 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 4221 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
03N06 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
auf Bestellung 150000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
03N06L | GOFORD Semiconductor |
![]() |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
03N06L | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
03N06L | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 492 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
03N06L | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
06N06L | GOFORD Semiconductor |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
06N06L | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V Power Dissipation (Max): 960mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
06N06L | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V Power Dissipation (Max): 960mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V |
auf Bestellung 3443 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
06N06L | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V Power Dissipation (Max): 960mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3L Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
1002 | GOFORD Semiconductor |
![]() |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
1002 | GOFORD Semiconductor |
![]() |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
1002 | GOFORD Semiconductor |
![]() |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
1216D2 | GOFORD Semiconductor | P-CH -12V -16A 21mOhmMAX at -4.5V, 27mOhmMAX at -2.5V, DFN2x2-6L |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
18N10 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V FET Feature: Standard Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2296 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
18N10 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V FET Feature: Standard Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
18N10 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V FET Feature: Standard Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
18N10 | GOFORD Semiconductor |
![]() ![]() |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
18N20 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
18N20 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V |
auf Bestellung 1929 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
18N20 | GOFORD Semiconductor |
![]() |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
18N20F | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
18N20F | GOFORD Semiconductor |
![]() ![]() |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
18N20F | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 25 V |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
18N20J | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
18N20J | GOFORD Semiconductor |
![]() ![]() |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
18N20J | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
2002A | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 190 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
20N06 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1609 pF @ 30 V |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
2300F | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V |
auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
2300F | GOFORD Semiconductor |
![]() |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
2300F | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
2300F | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V |
auf Bestellung 2889 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
2301 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
2301 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
auf Bestellung 3916 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
2301 | GOFORD Semiconductor |
![]() |
auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
2301 | GOFORD Semiconductor |
![]() |
auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
2301H | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 890mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
auf Bestellung 2816 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
2301H | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 890mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
2302 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
2302 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 3165 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
2302 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
2302 | GOFORD Semiconductor |
![]() |
auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
2302 | GOFORD Semiconductor |
![]() |
auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
2302 | GOFORD Semiconductor |
![]() |
auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
25P06 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
25P06 | GOFORD Semiconductor |
![]() |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
25P06 | Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V |
auf Bestellung 1854 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
3400 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 2.8A, 2.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
3400 | GOFORD Semiconductor |
![]() |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
3400 | GOFORD Semiconductor |
![]() |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
3400 | GOFORD Semiconductor |
![]() |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
3400L | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 2.8A, 2.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
3400L | GOFORD Semiconductor |
![]() |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
3400L | GOFORD Semiconductor |
![]() |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
3400L | GOFORD Semiconductor |
![]() |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
3401 | GOFORD Semiconductor |
![]() |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
3401 | Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
03N06 |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V,SOT-23
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V,SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.066 EUR |
15000+ | 0.059 EUR |
30000+ | 0.055 EUR |
03N06 |
![]() |
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
03N06 |
![]() |
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4221 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
36+ | 0.5 EUR |
100+ | 0.25 EUR |
500+ | 0.21 EUR |
1000+ | 0.15 EUR |
03N06 |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 60V 3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.071 EUR |
15000+ | 0.065 EUR |
30000+ | 0.063 EUR |
03N06L |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V, SOT-23-3L
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V, SOT-23-3L
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
15000+ | 0.063 EUR |
30000+ | 0.055 EUR |
03N06L |
![]() |
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
03N06L |
![]() |
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
32+ | 0.55 EUR |
100+ | 0.28 EUR |
03N06L |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.077 EUR |
15000+ | 0.071 EUR |
30000+ | 0.064 EUR |
06N06L |
![]() |
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.096 EUR |
06N06L |
![]() |
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
06N06L |
![]() |
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
auf Bestellung 3443 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
37+ | 0.48 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.18 EUR |
06N06L |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 5.5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
Description: MOSFET N-CH 60V 5.5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
15000+ | 0.095 EUR |
30000+ | 0.085 EUR |
48000+ | 0.079 EUR |
1002 |
![]() |
Hersteller: GOFORD Semiconductor
N100V,2A,RD(max) Less Than 250mOhm at 10V,RD(max) Less Than 260mOhm at 4.5V,VTH -1V to 3V, SOT-23
N100V,2A,RD(max) Less Than 250mOhm at 10V,RD(max) Less Than 260mOhm at 4.5V,VTH -1V to 3V, SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.057 EUR |
15000+ | 0.05 EUR |
30000+ | 0.044 EUR |
1002 |
![]() |
Hersteller: GOFORD Semiconductor
N100V,2A,RD(max) Less Than 250mOhm at 10V,RD(max) Less Than 260mOhm at 4.5V,VTH -1V to 3V, SOT-23
N100V,2A,RD(max) Less Than 250mOhm at 10V,RD(max) Less Than 260mOhm at 4.5V,VTH -1V to 3V, SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.053 EUR |
1002 |
![]() |
Hersteller: GOFORD Semiconductor
Trench MOSFET
Trench MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.076 EUR |
1216D2 |
Hersteller: GOFORD Semiconductor
P-CH -12V -16A 21mOhmMAX at -4.5V, 27mOhmMAX at -2.5V, DFN2x2-6L
P-CH -12V -16A 21mOhmMAX at -4.5V, 27mOhmMAX at -2.5V, DFN2x2-6L
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
15000+ | 0.11 EUR |
18N10 |
![]() |
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.16 EUR |
18+ | 1 EUR |
100+ | 0.7 EUR |
500+ | 0.58 EUR |
1000+ | 0.49 EUR |
18N10 |
![]() |
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
18N10 |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 25A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 100V 25A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.29 EUR |
15000+ | 0.27 EUR |
30000+ | 0.24 EUR |
18N10 |
![]() ![]() |
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.28 EUR |
15000+ | 0.25 EUR |
30000+ | 0.21 EUR |
18N20 |
![]() |
Hersteller: Goford Semiconductor
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
Produkt ist nicht verfügbar
18N20 |
![]() |
Hersteller: Goford Semiconductor
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
auf Bestellung 1929 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.48 EUR |
15+ | 1.21 EUR |
100+ | 0.94 EUR |
500+ | 0.8 EUR |
1000+ | 0.65 EUR |
18N20 |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 200V 18A 0.136OhmMAX at 10V TO-252
N-CH 200V 18A 0.136OhmMAX at 10V TO-252
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.55 EUR |
15000+ | 0.49 EUR |
18N20F |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 200V 18A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 200V 18A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.72 EUR |
6000+ | 0.68 EUR |
18N20F |
![]() ![]() |
Hersteller: GOFORD Semiconductor
N-CH,200V,18A,RD(max) Less Than 0.19Ohm at 10V,VTH 1.0V to 3.0V, TO-220F
N-CH,200V,18A,RD(max) Less Than 0.19Ohm at 10V,VTH 1.0V to 3.0V, TO-220F
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
227+ | 0.68 EUR |
15000+ | 0.6 EUR |
18N20F |
![]() |
Hersteller: Goford Semiconductor
Description: N200V, 18A,RD<0.19@10V,VTH1.0V~3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 25 V
Description: N200V, 18A,RD<0.19@10V,VTH1.0V~3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 25 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.9 EUR |
50+ | 1.52 EUR |
18N20J |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 200V 18A TO-251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Description: MOSFET N-CH 200V 18A TO-251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.57 EUR |
18N20J |
![]() ![]() |
Hersteller: GOFORD Semiconductor
N-CH,200V,18A,RD(max) Less Than 0.16Ohm at 10V,VTH 1.0V to 3.0V, TO-251
N-CH,200V,18A,RD(max) Less Than 0.16Ohm at 10V,VTH 1.0V to 3.0V, TO-251
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
285+ | 0.54 EUR |
18N20J |
![]() |
Hersteller: Goford Semiconductor
Description: N200V, 18A,RD<0.16@10V,VTH1V~3V,
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
Description: N200V, 18A,RD<0.16@10V,VTH1V~3V,
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.51 EUR |
75+ | 1.21 EUR |
150+ | 0.96 EUR |
2002A |
![]() |
Hersteller: Goford Semiconductor
Description: N190V,5A,RD<540M@10V,VTH1.0V~3.0
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
Description: N190V,5A,RD<540M@10V,VTH1.0V~3.0
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
Produkt ist nicht verfügbar
20N06 |
![]() |
Hersteller: Goford Semiconductor
Description: N60V,25A,RD<24M@10V,VTH1.0V~2.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1609 pF @ 30 V
Description: N60V,25A,RD<24M@10V,VTH1.0V~2.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1609 pF @ 30 V
Produkt ist nicht verfügbar
2300F |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Description: MOSFET N-CH 20V 6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.049 EUR |
15000+ | 0.045 EUR |
30000+ | 0.041 EUR |
2300F |
![]() |
Hersteller: GOFORD Semiconductor
N-CH,20V,6A,RD(max) Less Than 27mOhm at 4.5V,RD(max)41mOhm at 2.5V,VTH 0.5V to 0.9V,SOT-23
N-CH,20V,6A,RD(max) Less Than 27mOhm at 4.5V,RD(max)41mOhm at 2.5V,VTH 0.5V to 0.9V,SOT-23
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3334+ | 0.046 EUR |
15000+ | 0.041 EUR |
30000+ | 0.035 EUR |
2300F |
![]() |
Hersteller: Goford Semiconductor
Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Produkt ist nicht verfügbar
2300F |
![]() |
Hersteller: Goford Semiconductor
Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 2889 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
48+ | 0.37 EUR |
100+ | 0.19 EUR |
500+ | 0.15 EUR |
1000+ | 0.11 EUR |
2301 |
![]() |
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.1 EUR |
2301 |
![]() |
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 3916 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
43+ | 0.42 EUR |
100+ | 0.21 EUR |
500+ | 0.17 EUR |
1000+ | 0.13 EUR |
2301 |
![]() |
Hersteller: GOFORD Semiconductor
Surface Mount MOSFET
Surface Mount MOSFET
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3847+ | 0.04 EUR |
2301 |
![]() |
Hersteller: GOFORD Semiconductor
Surface Mount MOSFET
Surface Mount MOSFET
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3847+ | 0.04 EUR |
2301H |
![]() |
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 2816 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
50+ | 0.36 EUR |
101+ | 0.18 EUR |
500+ | 0.15 EUR |
1000+ | 0.1 EUR |
2301H |
![]() |
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
2302 |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
2302 |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 3165 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
38+ | 0.47 EUR |
100+ | 0.24 EUR |
500+ | 0.19 EUR |
1000+ | 0.14 EUR |
2302 |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.047 EUR |
15000+ | 0.044 EUR |
30000+ | 0.039 EUR |
2302 |
![]() |
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 150000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3449+ | 0.044 EUR |
15000+ | 0.04 EUR |
30000+ | 0.034 EUR |
2302 |
![]() |
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 150000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3449+ | 0.044 EUR |
15000+ | 0.04 EUR |
30000+ | 0.034 EUR |
2302 |
![]() |
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 150000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.07 EUR |
15000+ | 0.062 EUR |
30000+ | 0.054 EUR |
50000+ | 0.048 EUR |
25P06 |
![]() |
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.57 EUR |
25P06 |
![]() |
Hersteller: GOFORD Semiconductor
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.35 EUR |
15000+ | 0.32 EUR |
30000+ | 0.27 EUR |
25P06 |
![]() |
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
auf Bestellung 1854 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.36 EUR |
16+ | 1.12 EUR |
100+ | 0.87 EUR |
500+ | 0.74 EUR |
1000+ | 0.6 EUR |
3400 |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 5.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.8A, 2.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Description: MOSFET N-CH 30V 5.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.8A, 2.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.063 EUR |
15000+ | 0.059 EUR |
30000+ | 0.056 EUR |
3400 |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.058 EUR |
15000+ | 0.053 EUR |
30000+ | 0.048 EUR |
3400 |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.058 EUR |
15000+ | 0.053 EUR |
30000+ | 0.048 EUR |
3400 |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.053 EUR |
15000+ | 0.047 EUR |
30000+ | 0.041 EUR |
50000+ | 0.037 EUR |
3400L |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.8A, 2.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Description: MOSFET N-CH 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.8A, 2.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.077 EUR |
15000+ | 0.071 EUR |
30000+ | 0.064 EUR |
3400L |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A, 27mOhmMAX at 4.5V ,33mOhmMAX at 4.5V ,SOT-23-3L
N-CH 30V 5.6A, 27mOhmMAX at 4.5V ,33mOhmMAX at 4.5V ,SOT-23-3L
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
15000+ | 0.063 EUR |
30000+ | 0.055 EUR |
3400L |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A, 27mOhmMAX at 4.5V ,33mOhmMAX at 4.5V ,SOT-23-3L
N-CH 30V 5.6A, 27mOhmMAX at 4.5V ,33mOhmMAX at 4.5V ,SOT-23-3L
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
15000+ | 0.063 EUR |
30000+ | 0.055 EUR |
3400L |
![]() |
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A, 27mOhmMAX at 4.5V ,33mOhmMAX at 4.5V ,SOT-23-3L
N-CH 30V 5.6A, 27mOhmMAX at 4.5V ,33mOhmMAX at 4.5V ,SOT-23-3L
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.067 EUR |
15000+ | 0.06 EUR |
30000+ | 0.052 EUR |
50000+ | 0.046 EUR |
3401 |
![]() |
Hersteller: GOFORD Semiconductor
P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
P-CH -30V -4.2A, 55mOhm/MAX at -10V, 69mOhm/MAX at -4.5V SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.052 EUR |
3401 |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 4.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Description: MOSFET P-CH 30V 4.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.062 EUR |
15000+ | 0.058 EUR |