06N06L Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 60V 5.5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.1 EUR |
| 15000+ | 0.092 EUR |
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Technische Details 06N06L Goford Semiconductor
Description: MOSFET N-CH 60V 5.5A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A, Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V, Power Dissipation (Max): 960mW, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V.
Weitere Produktangebote 06N06L nach Preis ab 0.096 EUR bis 0.096 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 06N06L | Hersteller : GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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06N06L | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V Power Dissipation (Max): 960mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V |
Produkt ist nicht verfügbar |
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06N06L | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V Power Dissipation (Max): 960mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V |
Produkt ist nicht verfügbar |