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G3404B G3404B Goford Semiconductor G3404B.pdf Description: MOSFET N-CH 30V 5.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
15000+ 0.055 EUR
Mindestbestellmenge: 3000
G3404B G3404B Goford Semiconductor G3404B.pdf Description: N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+ 0.1 EUR
9000+ 0.099 EUR
Mindestbestellmenge: 3000
G3404B GOFORD Semiconductor G3404B.pdf N-CH,30V,5.6A,RD(max) Less Than 22mOhm at 10V,RD(max) Less Than 35mOhm at 4.5V,VTH 1.0V to 2.0V, SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.057 EUR
15000+ 0.05 EUR
30000+ 0.044 EUR
Mindestbestellmenge: 3000
G3404B G3404B Goford Semiconductor G3404B.pdf Description: N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
62+ 0.29 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 42
G3404LL GOFORD Semiconductor G3404LL.pdf N-Channel Enhancement Mode Power MOSFET
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.07 EUR
15000+ 0.063 EUR
30000+ 0.054 EUR
Mindestbestellmenge: 3000
G3404LL G3404LL Goford Semiconductor G3404LL.pdf Description: N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 541 pF @ 15 V
Produkt ist nicht verfügbar
G3404LL G3404LL Goford Semiconductor G3404LL.pdf Description: N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 541 pF @ 15 V
auf Bestellung 1627 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
49+ 0.37 EUR
100+ 0.25 EUR
500+ 0.19 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 33
G3404LL G3404LL Goford Semiconductor G3404LL.pdf Description: MOSFET N-CH 30V 6A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
15000+ 0.069 EUR
Mindestbestellmenge: 3000
G350N06D32 G350N06D32 Goford Semiconductor G350N06D32.pdf Description: MOSFET 2N-CH 60V 10A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
auf Bestellung 3077 Stücke:
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17+1.09 EUR
25+ 0.73 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.36 EUR
2000+ 0.33 EUR
Mindestbestellmenge: 17
G350N06D32 Goford Semiconductor G350N06D32.pdf Description: MOSFET 2N-CH 60V 10A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.24 EUR
Mindestbestellmenge: 5000
G350N06D32 GOFORD Semiconductor G350N06D32.pdf Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.22 EUR
15000+ 0.2 EUR
30000+ 0.17 EUR
Mindestbestellmenge: 5000
G350N06D32 G350N06D32 Goford Semiconductor G350N06D32.pdf Description: MOSFET 2N-CH 60V 10A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Produkt ist nicht verfügbar
G350P02LLE G350P02LLE Goford Semiconductor GOFORD-G350P02LLE.pdf Description: MOSFET P-CH 20V 4.5A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1126 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.077 EUR
15000+ 0.071 EUR
Mindestbestellmenge: 3000
G350P02LLE GOFORD Semiconductor GOFORD-G350P02LLE.pdf P-CH -20V -4.5A 35mOhm/MAX at -4.5V,45mOhm/MAX at -2.5V SOT-23-6L
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.073 EUR
Mindestbestellmenge: 3000
G35N02K G35N02K Goford Semiconductor GOFORD-G35N02K.pdf Description: N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.3 EUR
Mindestbestellmenge: 2500
G35N02K G35N02K Goford Semiconductor GOFORD-G35N02K.pdf Description: N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 10 V
auf Bestellung 3754 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
25+ 0.71 EUR
100+ 0.53 EUR
500+ 0.42 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 22
G35P04D5 G35P04D5 Goford Semiconductor GOFORD-G35P04D5.pdf Description: MOSFET P-CH 40V 35A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.4 EUR
Mindestbestellmenge: 5000
G36N03K G36N03K Goford Semiconductor GOFORD-G36N03K.pdf Description: N30V,36A,RD<8.5M@10V,VTH1.0V~2.2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
27+ 0.68 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
G36N03K G36N03K Goford Semiconductor GOFORD-G36N03K.pdf Description: MOSFET N-CH 30V 36A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.21 EUR
Mindestbestellmenge: 2500
G36N03K G36N03K Goford Semiconductor GOFORD-G36N03K.pdf Description: N30V,36A,RD<8.5M@10V,VTH1.0V~2.2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
G400P06S G400P06S Goford Semiconductor GOFORD-G400P06S.pdf Description: MOSFET, P-CH, 60V,6A,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2506 pF @ 30 V
Produkt ist nicht verfügbar
G400P06S G400P06S Goford Semiconductor GOFORD-G400P06S.pdf Description: MOSFET, P-CH, 60V,6A,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2506 pF @ 30 V
auf Bestellung 2873 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
2000+ 0.31 EUR
Mindestbestellmenge: 20
G400P06S GOFORD Semiconductor GOFORD-G400P06S.pdf P-Channel Enhancement Mode Power MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.18 EUR
Mindestbestellmenge: 4000
G400P06T G400P06T Goford Semiconductor GOFORD-G400P06T.pdf Description: P-60V,-32A,RD(MAX)<40M@-10V,VTH-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
FET Feature: Standard
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2598 pF @ 30 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
16+ 1.11 EUR
Mindestbestellmenge: 14
G400P06T GOFORD Semiconductor GOFORD-G400P06T.pdf G400P06T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.32 EUR
Mindestbestellmenge: 1000
G40P03D5 GOFORD Semiconductor GOFORD-G40P03D5.pdf G40P03D5.pdf P-CH,-30V,-35A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 14mOhm at -4.5V,VTH -1.0V to -2.5V,DFN5X6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.29 EUR
Mindestbestellmenge: 5000
G40P03D5 G40P03D5 Goford Semiconductor G40P03D5.pdf Description: P-30V,-35A,RD(MAX)<10M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V
Produkt ist nicht verfügbar
G40P03D5 G40P03D5 Goford Semiconductor GOFORD-G40P03D5.pdf Description: MOSFET P-CH 30V 35A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V
auf Bestellung 5000 Stücke:
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G40P03D5 G40P03D5 Goford Semiconductor G40P03D5.pdf Description: P-30V,-35A,RD(MAX)<10M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V
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18+1 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
2000+ 0.39 EUR
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G40P03K G40P03K Goford Semiconductor G40P03K.pdf Description: P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2622 pF @ 15 V
Produkt ist nicht verfügbar
G40P03K G40P03K Goford Semiconductor G40P03K.pdf Description: P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2622 pF @ 15 V
auf Bestellung 1587 Stücke:
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20+0.9 EUR
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500+ 0.45 EUR
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G40P03K G40P03K Goford Semiconductor GOFORD-G40P03K-.pdf Description: MOSFET P-CH 30V 40A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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2500+0.29 EUR
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G40P03K GOFORD Semiconductor G40P03K.pdf GOFORD-G40P03K-.pdf P-30V,-40A,RD(max) Less Than 9.5mOhm at -10V,RD(max) Less Than 12.5mOhm at -4.5V,VTH -1.0V to -2.5V ,TO-252
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.28 EUR
15000+ 0.25 EUR
Mindestbestellmenge: 2500
G450N10D52 G450N10D52 Goford Semiconductor G450N10D52.pdf Description: MOSFET 100V 35A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 80W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2196pF @ 50V
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
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G450N10D52 G450N10D52 Goford Semiconductor G450N10D52.pdf Description: MOSFET 100V 35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 80W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2196pF @ 50V
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Produkt ist nicht verfügbar
G450P04K G450P04K Goford Semiconductor G450P04K.pdf Description: MOSFET, P-CH,-40V,-11A,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 20 V
Produkt ist nicht verfügbar
G450P04K G450P04K Goford Semiconductor G450P04K.pdf Description: MOSFET P-CH -40V 11A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 20 V
auf Bestellung 2500 Stücke:
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G450P04K G450P04K Goford Semiconductor G450P04K.pdf Description: MOSFET, P-CH,-40V,-11A,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 20 V
Produkt ist nicht verfügbar
G45P02D3 G45P02D3 Goford Semiconductor GOFORD-G45P02D3.pdf Description: P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4867 pF @ 10 V
Produkt ist nicht verfügbar
G45P02D3 G45P02D3 Goford Semiconductor GOFORD-G45P02D3.pdf Description: P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4867 pF @ 10 V
auf Bestellung 4870 Stücke:
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18+0.99 EUR
21+ 0.85 EUR
100+ 0.59 EUR
500+ 0.49 EUR
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G45P02D3 G45P02D3 Goford Semiconductor GOFORD-G45P02D3.pdf Description: MOSFET P-CH 20V 45A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.25 EUR
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30000+ 0.23 EUR
Mindestbestellmenge: 5000
G45P02D3 GOFORD Semiconductor GOFORD-G45P02D3.pdf G45P02D3
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5000+0.24 EUR
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G45P40T G45P40T Goford Semiconductor products-detail.php?ProId=642 Description: MOSFET P-CH 40V 45A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
FET Feature: Standard
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.5 EUR
6000+ 0.48 EUR
Mindestbestellmenge: 2000
G45P40T G45P40T Goford Semiconductor products-detail.php?ProId=642 Description: MOSFET, P-CH, 40V,45A,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
FET Feature: Standard
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3269 pF @ 20 V
auf Bestellung 348 Stücke:
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12+1.51 EUR
14+ 1.31 EUR
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G4616 GOFORD Semiconductor GOFORD-G4616.pdf G4616.pdf G4616
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.23 EUR
16000+ 0.21 EUR
Mindestbestellmenge: 4000
G4616 G4616 Goford Semiconductor GOFORD-G4616.pdf Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.24 EUR
16000+ 0.22 EUR
32000+ 0.2 EUR
Mindestbestellmenge: 4000
G4616 G4616 Goford Semiconductor G4616.pdf Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
G4616 G4616 Goford Semiconductor G4616.pdf Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 568 Stücke:
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20+0.9 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.45 EUR
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G48N03D3 G48N03D3 Goford Semiconductor products-detail.php?ProId=442 Description: N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
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G48N03D3 G48N03D3 Goford Semiconductor products-detail.php?ProId=442 Description: N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
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G4953S G4953S Goford Semiconductor G4953S.pdf Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
G4953S G4953S Goford Semiconductor G4953S.pdf Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 1714 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
32+ 0.56 EUR
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500+ 0.3 EUR
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G4953S G4953S Goford Semiconductor G4953S.pdf Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.17 EUR
16000+ 0.15 EUR
Mindestbestellmenge: 4000
G500P03IE GOFORD Semiconductor G500P03IE
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.06 EUR
15000+ 0.053 EUR
Mindestbestellmenge: 3000
G50N03D5 G50N03D5 Goford Semiconductor G50N03D5.pdf Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
Produkt ist nicht verfügbar
G50N03D5 G50N03D5 Goford Semiconductor G50N03D5.pdf Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
22+ 0.81 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.4 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 15
G50N03D5 G50N03D5 Goford Semiconductor G50N03D5.pdf Description: MOSFET N-CH 30V 50A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.26 EUR
Mindestbestellmenge: 5000
G50N03J G50N03J Goford Semiconductor G50N03J.pdf Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 3376 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
75+ 0.57 EUR
150+ 0.52 EUR
525+ 0.43 EUR
1050+ 0.39 EUR
2025+ 0.36 EUR
Mindestbestellmenge: 15
G50N03J G50N03J Goford Semiconductor G50N03J.pdf Description: MOSFET N-CH 30V 65A TO-251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
Mindestbestellmenge: 3000
G50N03K G50N03K Goford Semiconductor G50N03K.pdf Description: MOSFET N-CH 30V 65A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.24 EUR
15000+ 0.23 EUR
30000+ 0.2 EUR
Mindestbestellmenge: 2500
G3404B G3404B.pdf
G3404B
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 5.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.06 EUR
15000+ 0.055 EUR
Mindestbestellmenge: 3000
G3404B G3404B.pdf
G3404B
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.1 EUR
9000+ 0.099 EUR
Mindestbestellmenge: 3000
G3404B G3404B.pdf
Hersteller: GOFORD Semiconductor
N-CH,30V,5.6A,RD(max) Less Than 22mOhm at 10V,RD(max) Less Than 35mOhm at 4.5V,VTH 1.0V to 2.0V, SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.057 EUR
15000+ 0.05 EUR
30000+ 0.044 EUR
Mindestbestellmenge: 3000
G3404B G3404B.pdf
G3404B
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
62+ 0.29 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 42
G3404LL G3404LL.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.07 EUR
15000+ 0.063 EUR
30000+ 0.054 EUR
Mindestbestellmenge: 3000
G3404LL G3404LL.pdf
G3404LL
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 541 pF @ 15 V
Produkt ist nicht verfügbar
G3404LL G3404LL.pdf
G3404LL
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 541 pF @ 15 V
auf Bestellung 1627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
49+ 0.37 EUR
100+ 0.25 EUR
500+ 0.19 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 33
G3404LL G3404LL.pdf
G3404LL
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 6A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.074 EUR
15000+ 0.069 EUR
Mindestbestellmenge: 3000
G350N06D32 G350N06D32.pdf
G350N06D32
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 10A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
auf Bestellung 3077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.09 EUR
25+ 0.73 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.36 EUR
2000+ 0.33 EUR
Mindestbestellmenge: 17
G350N06D32 G350N06D32.pdf
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 10A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.24 EUR
Mindestbestellmenge: 5000
G350N06D32 G350N06D32.pdf
Hersteller: GOFORD Semiconductor
Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.22 EUR
15000+ 0.2 EUR
30000+ 0.17 EUR
Mindestbestellmenge: 5000
G350N06D32 G350N06D32.pdf
G350N06D32
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 10A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Produkt ist nicht verfügbar
G350P02LLE GOFORD-G350P02LLE.pdf
G350P02LLE
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 20V 4.5A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1126 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.077 EUR
15000+ 0.071 EUR
Mindestbestellmenge: 3000
G350P02LLE GOFORD-G350P02LLE.pdf
Hersteller: GOFORD Semiconductor
P-CH -20V -4.5A 35mOhm/MAX at -4.5V,45mOhm/MAX at -2.5V SOT-23-6L
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.073 EUR
Mindestbestellmenge: 3000
G35N02K GOFORD-G35N02K.pdf
G35N02K
Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.3 EUR
Mindestbestellmenge: 2500
G35N02K GOFORD-G35N02K.pdf
G35N02K
Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 10 V
auf Bestellung 3754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
25+ 0.71 EUR
100+ 0.53 EUR
500+ 0.42 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 22
G35P04D5 GOFORD-G35P04D5.pdf
G35P04D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 35A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.4 EUR
Mindestbestellmenge: 5000
G36N03K GOFORD-G36N03K.pdf
G36N03K
Hersteller: Goford Semiconductor
Description: N30V,36A,RD<8.5M@10V,VTH1.0V~2.2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
27+ 0.68 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
G36N03K GOFORD-G36N03K.pdf
G36N03K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 36A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.21 EUR
Mindestbestellmenge: 2500
G36N03K GOFORD-G36N03K.pdf
G36N03K
Hersteller: Goford Semiconductor
Description: N30V,36A,RD<8.5M@10V,VTH1.0V~2.2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
G400P06S GOFORD-G400P06S.pdf
G400P06S
Hersteller: Goford Semiconductor
Description: MOSFET, P-CH, 60V,6A,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2506 pF @ 30 V
Produkt ist nicht verfügbar
G400P06S GOFORD-G400P06S.pdf
G400P06S
Hersteller: Goford Semiconductor
Description: MOSFET, P-CH, 60V,6A,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2506 pF @ 30 V
auf Bestellung 2873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
2000+ 0.31 EUR
Mindestbestellmenge: 20
G400P06S GOFORD-G400P06S.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4000+0.18 EUR
Mindestbestellmenge: 4000
G400P06T GOFORD-G400P06T.pdf
G400P06T
Hersteller: Goford Semiconductor
Description: P-60V,-32A,RD(MAX)<40M@-10V,VTH-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
FET Feature: Standard
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2598 pF @ 30 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.28 EUR
16+ 1.11 EUR
Mindestbestellmenge: 14
G400P06T GOFORD-G400P06T.pdf
Hersteller: GOFORD Semiconductor
G400P06T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+0.32 EUR
Mindestbestellmenge: 1000
G40P03D5 GOFORD-G40P03D5.pdf G40P03D5.pdf
Hersteller: GOFORD Semiconductor
P-CH,-30V,-35A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 14mOhm at -4.5V,VTH -1.0V to -2.5V,DFN5X6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.29 EUR
Mindestbestellmenge: 5000
G40P03D5 G40P03D5.pdf
G40P03D5
Hersteller: Goford Semiconductor
Description: P-30V,-35A,RD(MAX)<10M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V
Produkt ist nicht verfügbar
G40P03D5 GOFORD-G40P03D5.pdf
G40P03D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 35A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.3 EUR
Mindestbestellmenge: 5000
G40P03D5 G40P03D5.pdf
G40P03D5
Hersteller: Goford Semiconductor
Description: P-30V,-35A,RD(MAX)<10M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V
auf Bestellung 4975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
2000+ 0.39 EUR
Mindestbestellmenge: 18
G40P03K G40P03K.pdf
G40P03K
Hersteller: Goford Semiconductor
Description: P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2622 pF @ 15 V
Produkt ist nicht verfügbar
G40P03K G40P03K.pdf
G40P03K
Hersteller: Goford Semiconductor
Description: P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2622 pF @ 15 V
auf Bestellung 1587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.9 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.45 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 20
G40P03K GOFORD-G40P03K-.pdf
G40P03K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 40A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.29 EUR
Mindestbestellmenge: 2500
G40P03K G40P03K.pdf GOFORD-G40P03K-.pdf
Hersteller: GOFORD Semiconductor
P-30V,-40A,RD(max) Less Than 9.5mOhm at -10V,RD(max) Less Than 12.5mOhm at -4.5V,VTH -1.0V to -2.5V ,TO-252
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.28 EUR
15000+ 0.25 EUR
Mindestbestellmenge: 2500
G450N10D52 G450N10D52.pdf
G450N10D52
Hersteller: Goford Semiconductor
Description: MOSFET 100V 35A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 80W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2196pF @ 50V
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.74 EUR
16+ 1.17 EUR
100+ 0.81 EUR
500+ 0.65 EUR
1000+ 0.6 EUR
2000+ 0.55 EUR
Mindestbestellmenge: 11
G450N10D52 G450N10D52.pdf
G450N10D52
Hersteller: Goford Semiconductor
Description: MOSFET 100V 35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 80W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2196pF @ 50V
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Produkt ist nicht verfügbar
G450P04K G450P04K.pdf
G450P04K
Hersteller: Goford Semiconductor
Description: MOSFET, P-CH,-40V,-11A,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 20 V
Produkt ist nicht verfügbar
G450P04K G450P04K.pdf
G450P04K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH -40V 11A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
G450P04K G450P04K.pdf
G450P04K
Hersteller: Goford Semiconductor
Description: MOSFET, P-CH,-40V,-11A,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 20 V
Produkt ist nicht verfügbar
G45P02D3 GOFORD-G45P02D3.pdf
G45P02D3
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4867 pF @ 10 V
Produkt ist nicht verfügbar
G45P02D3 GOFORD-G45P02D3.pdf
G45P02D3
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4867 pF @ 10 V
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.85 EUR
100+ 0.59 EUR
500+ 0.49 EUR
1000+ 0.42 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 18
G45P02D3 GOFORD-G45P02D3.pdf
G45P02D3
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 20V 45A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.25 EUR
15000+ 0.24 EUR
30000+ 0.23 EUR
Mindestbestellmenge: 5000
G45P02D3 GOFORD-G45P02D3.pdf
Hersteller: GOFORD Semiconductor
G45P02D3
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.24 EUR
15000+ 0.22 EUR
30000+ 0.2 EUR
Mindestbestellmenge: 5000
G45P40T products-detail.php?ProId=642
G45P40T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 45A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
FET Feature: Standard
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.5 EUR
6000+ 0.48 EUR
Mindestbestellmenge: 2000
G45P40T products-detail.php?ProId=642
G45P40T
Hersteller: Goford Semiconductor
Description: MOSFET, P-CH, 40V,45A,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
FET Feature: Standard
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3269 pF @ 20 V
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.51 EUR
14+ 1.31 EUR
100+ 0.91 EUR
Mindestbestellmenge: 12
G4616 GOFORD-G4616.pdf G4616.pdf
Hersteller: GOFORD Semiconductor
G4616
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4000+0.23 EUR
16000+ 0.21 EUR
Mindestbestellmenge: 4000
G4616 GOFORD-G4616.pdf
G4616
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.24 EUR
16000+ 0.22 EUR
32000+ 0.2 EUR
Mindestbestellmenge: 4000
G4616 G4616.pdf
G4616
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
G4616 G4616.pdf
G4616
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.9 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.45 EUR
Mindestbestellmenge: 20
G48N03D3 products-detail.php?ProId=442
G48N03D3
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.38 EUR
Mindestbestellmenge: 5000
G48N03D3 products-detail.php?ProId=442
G48N03D3
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.92 EUR
100+ 0.7 EUR
500+ 0.56 EUR
1000+ 0.45 EUR
2000+ 0.4 EUR
Mindestbestellmenge: 17
G4953S G4953S.pdf
G4953S
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
G4953S G4953S.pdf
G4953S
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 1714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
32+ 0.56 EUR
100+ 0.38 EUR
500+ 0.3 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 21
G4953S G4953S.pdf
G4953S
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.17 EUR
16000+ 0.15 EUR
Mindestbestellmenge: 4000
G500P03IE
Hersteller: GOFORD Semiconductor
G500P03IE
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.06 EUR
15000+ 0.053 EUR
Mindestbestellmenge: 3000
G50N03D5 G50N03D5.pdf
G50N03D5
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
Produkt ist nicht verfügbar
G50N03D5 G50N03D5.pdf
G50N03D5
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.21 EUR
22+ 0.81 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.4 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 15
G50N03D5 G50N03D5.pdf
G50N03D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 50A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.26 EUR
Mindestbestellmenge: 5000
G50N03J G50N03J.pdf
G50N03J
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 3376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.2 EUR
75+ 0.57 EUR
150+ 0.52 EUR
525+ 0.43 EUR
1050+ 0.39 EUR
2025+ 0.36 EUR
Mindestbestellmenge: 15
G50N03J G50N03J.pdf
G50N03J
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 65A TO-251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
Mindestbestellmenge: 3000
G50N03K G50N03K.pdf
G50N03K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 65A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.24 EUR
15000+ 0.23 EUR
30000+ 0.2 EUR
Mindestbestellmenge: 2500
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