Produkte > DIOTEC SEMICONDUCTOR > Alle Produkte des Herstellers DIOTEC SEMICONDUCTOR (29390) > Seite 204 nach 490
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DBI25-08A | DIOTEC SEMICONDUCTOR |
![]() Description: Bridge rectifier: three-phase; Urmax: 800V; If: 25A; Ifsm: 370A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 370A Version: flat Case: DBI-A Electrical mounting: THT Leads: flat pin Features of semiconductor devices: UL approval Kind of package: tube Max. forward voltage: 1.05V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1486 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DBI25-12A | DIOTEC SEMICONDUCTOR |
![]() Description: Bridge rectifier: three-phase; Urmax: 1200V; If: 25A; Ifsm: 370A Kind of package: tube Version: flat Leads: flat pin Max. off-state voltage: 1.2kV Max. forward voltage: 1.05V Load current: 25A Max. forward impulse current: 370A Electrical mounting: THT Features of semiconductor devices: UL approval Type of bridge rectifier: three-phase Case: DBI-A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1751 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DBI25-16A | DIOTEC SEMICONDUCTOR |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A Case: DBI-A Kind of package: tube Max. off-state voltage: 1.6kV Features of semiconductor devices: UL approval Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Leads: flat pin Max. forward voltage: 1.05V Load current: 25A Max. forward impulse current: 370A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 222 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DBI25-18A | DIOTEC SEMICONDUCTOR |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 25A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.8kV Max. forward voltage: 1.05V Load current: 25A Max. forward impulse current: 370A Kind of package: tube Electrical mounting: THT Version: flat Features of semiconductor devices: UL approval Type of bridge rectifier: three-phase Case: DBI-A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DD1000 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 10kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm Mounting: THT Case: Ø3x12mm Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: fast switching; high voltage Max. off-state voltage: 10kV Max. load current: 0.3A Max. forward voltage: 40V Load current: 20mA Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5264 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DD1200 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 12kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm Type of diode: rectifying Mounting: THT Max. off-state voltage: 12kV Load current: 20mA Semiconductor structure: single diode Features of semiconductor devices: fast switching; high voltage Kind of package: Ammo Pack Max. forward impulse current: 3A Case: Ø3x12mm Max. forward voltage: 40V Max. load current: 0.3A Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3370 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DD1400 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 14kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm Mounting: THT Case: Ø3x12mm Kind of package: Ammo Pack Max. forward impulse current: 3A Max. forward voltage: 40V Features of semiconductor devices: fast switching; high voltage Max. off-state voltage: 14kV Load current: 20mA Max. load current: 0.3A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 150ns Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DD1600 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 16kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm Case: Ø3x12mm Mounting: THT Max. off-state voltage: 16kV Max. load current: 0.3A Max. forward voltage: 40V Load current: 20mA Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 3A Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: fast switching; high voltage Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3808 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DD1800 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 18kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm Type of diode: rectifying Mounting: THT Max. off-state voltage: 18kV Load current: 20mA Max. load current: 0.3A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; high voltage Max. forward voltage: 40V Case: Ø3x12mm Kind of package: Ammo Pack Max. forward impulse current: 3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6427 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
DD300 | DIOTEC SEMICONDUCTOR |
![]() |
auf Bestellung 4567 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
![]() |
DD600 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 6kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm Type of diode: rectifying Max. off-state voltage: 6kV Max. forward voltage: 40V Load current: 20mA Max. load current: 0.3A Semiconductor structure: single diode Case: Ø3x12mm Mounting: THT Features of semiconductor devices: fast switching; high voltage Max. forward impulse current: 3A Kind of package: Ammo Pack Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5440 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DI003N03SQ2 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Pulsed drain current: 9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±18V On-state resistance: 11mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI005P04PW-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; Idm: -40A; 2W; QFN2X2 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.4A Pulsed drain current: -40A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI006H03SQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.8/-3.3A Pulsed drain current: 60...-30A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Gate charge: 11.7/11.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: MOSFET H-Bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI006P02PW | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -36A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI008N09SQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 90V; 8A; Idm: 23A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 90V Drain current: 8A Pulsed drain current: 23A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI010N03PW-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 50A Power dissipation: 1.4W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI010N03PW | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 50A Power dissipation: 1.4W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI015N25D1 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 10.6A; Idm: 60A; 140W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 10.6A Pulsed drain current: 60A Power dissipation: 140W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 245mΩ Mounting: SMD Gate charge: 8.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI017N06PQ-AQ | DIOTEC SEMICONDUCTOR | DI017N06PQ-AQ-DIO SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI018C03PT | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 17/-11A Pulsed drain current: 120...-80A Power dissipation: 10.8W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 13/53.3mΩ Mounting: SMD Gate charge: 12/20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI018N65D1 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 54A Power dissipation: 142W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI020N06D1-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 50A Power dissipation: 25W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI020N06D1 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 45W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 275 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
DI020P06PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Drain-source voltage: -60V Drain current: -20A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 29.7W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI020P06PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Drain-source voltage: -60V Drain current: -20A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 29.7W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI025N06PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 15A Pulsed drain current: 80A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI025N06PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 15A Pulsed drain current: 80A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI028N10PQ2-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Pulsed drain current: 130A Power dissipation: 32.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
DI028P03PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -28A; Idm: -80A; 40W; QFN3X3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -28A Pulsed drain current: -80A Power dissipation: 40W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI030N03D1 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 80A Power dissipation: 40W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI035N10PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 130A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI035N10PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 130A Drain-source voltage: 100V Drain current: 35A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 25W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI035P02PT | DIOTEC SEMICONDUCTOR | DI035P02PT-DIO SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI035P04PT-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 25W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A Drain-source voltage: -40V Drain current: -35A On-state resistance: 15mΩ Type of transistor: P-MOSFET Power dissipation: 25W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI035P04PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 40W; QFN3X3 Mounting: SMD Kind of package: reel; tape Power dissipation: 40W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A Case: QFN3X3 Drain-source voltage: -40V Drain current: -35A On-state resistance: 15mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
DI038N04PQ2-AQ | DIOTEC SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
DI038N04PQ2 | DIOTEC SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI040N03PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 120A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI040P04D1-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -40A Pulsed drain current: -160A Power dissipation: 52W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
DI040P04D1 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -40A Pulsed drain current: -160A Power dissipation: 52W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
DI040P04PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -27A Pulsed drain current: -160A Power dissipation: 22.7W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
DI040P04PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -27A Pulsed drain current: -160A Power dissipation: 22.7W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI045N03PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 280A Power dissipation: 16W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI045N03PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 280A Power dissipation: 16W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 53/26nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI045N10PQ-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 400A Power dissipation: 40W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI048N04PQ2-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 200A Power dissipation: 22.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
DI048N04PQ2 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 200A Power dissipation: 22.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI048N04PT-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 48.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 40V Drain current: 48A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET Power dissipation: 31W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI049N06PTK-AQ | DIOTEC SEMICONDUCTOR | DI049N06PTK-AQ-DIO SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
DI049N06PTK | DIOTEC SEMICONDUCTOR | DI049N06PTK-DIO SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI050N04PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 140A Power dissipation: 37W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI050N04PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 140A Power dissipation: 37W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI050N06D1-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI050N06D1 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 379 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
DI050P02PT | DIOTEC SEMICONDUCTOR | DI050P02PT-DIO SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DI050P03PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -200A Drain-source voltage: -30V Drain current: -50A On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 39W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DI050P03PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -200A Drain-source voltage: -30V Drain current: -50A On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 39W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
DI064P04D1-AQ | DIOTEC SEMICONDUCTOR | DI064P04D1-AQ-DIO SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
DI064P04D1 | DIOTEC SEMICONDUCTOR | DI064P04D1-DIO SMD P channel transistors |
Produkt ist nicht verfügbar |
DBI25-08A |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 25A; Ifsm: 370A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: DBI-A
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: UL approval
Kind of package: tube
Max. forward voltage: 1.05V
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 25A; Ifsm: 370A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: DBI-A
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: UL approval
Kind of package: tube
Max. forward voltage: 1.05V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1486 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.38 EUR |
13+ | 5.62 EUR |
15+ | 4.88 EUR |
16+ | 4.6 EUR |
DBI25-12A |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1200V; If: 25A; Ifsm: 370A
Kind of package: tube
Version: flat
Leads: flat pin
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.05V
Load current: 25A
Max. forward impulse current: 370A
Electrical mounting: THT
Features of semiconductor devices: UL approval
Type of bridge rectifier: three-phase
Case: DBI-A
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1200V; If: 25A; Ifsm: 370A
Kind of package: tube
Version: flat
Leads: flat pin
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.05V
Load current: 25A
Max. forward impulse current: 370A
Electrical mounting: THT
Features of semiconductor devices: UL approval
Type of bridge rectifier: three-phase
Case: DBI-A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1751 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 7.11 EUR |
12+ | 6.39 EUR |
15+ | 4.92 EUR |
16+ | 4.65 EUR |
300+ | 4.56 EUR |
900+ | 4.45 EUR |
DBI25-16A |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Case: DBI-A
Kind of package: tube
Max. off-state voltage: 1.6kV
Features of semiconductor devices: UL approval
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. forward voltage: 1.05V
Load current: 25A
Max. forward impulse current: 370A
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Case: DBI-A
Kind of package: tube
Max. off-state voltage: 1.6kV
Features of semiconductor devices: UL approval
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. forward voltage: 1.05V
Load current: 25A
Max. forward impulse current: 370A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 222 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.64 EUR |
13+ | 5.85 EUR |
15+ | 4.82 EUR |
DBI25-18A |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.05V
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: UL approval
Type of bridge rectifier: three-phase
Case: DBI-A
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.05V
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: UL approval
Type of bridge rectifier: three-phase
Case: DBI-A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.81 EUR |
12+ | 6.02 EUR |
14+ | 5.32 EUR |
15+ | 5.03 EUR |
DD1000 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 10kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Mounting: THT
Case: Ø3x12mm
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: fast switching; high voltage
Max. off-state voltage: 10kV
Max. load current: 0.3A
Max. forward voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 3A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 10kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Mounting: THT
Case: Ø3x12mm
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: fast switching; high voltage
Max. off-state voltage: 10kV
Max. load current: 0.3A
Max. forward voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5264 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
142+ | 0.5 EUR |
158+ | 0.45 EUR |
205+ | 0.35 EUR |
217+ | 0.33 EUR |
DD1200 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 12kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 12kV
Load current: 20mA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; high voltage
Kind of package: Ammo Pack
Max. forward impulse current: 3A
Case: Ø3x12mm
Max. forward voltage: 40V
Max. load current: 0.3A
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 12kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 12kV
Load current: 20mA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; high voltage
Kind of package: Ammo Pack
Max. forward impulse current: 3A
Case: Ø3x12mm
Max. forward voltage: 40V
Max. load current: 0.3A
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3370 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
132+ | 0.54 EUR |
147+ | 0.49 EUR |
189+ | 0.38 EUR |
200+ | 0.36 EUR |
DD1400 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 14kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Mounting: THT
Case: Ø3x12mm
Kind of package: Ammo Pack
Max. forward impulse current: 3A
Max. forward voltage: 40V
Features of semiconductor devices: fast switching; high voltage
Max. off-state voltage: 14kV
Load current: 20mA
Max. load current: 0.3A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 150ns
Anzahl je Verpackung: 5000 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 14kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Mounting: THT
Case: Ø3x12mm
Kind of package: Ammo Pack
Max. forward impulse current: 3A
Max. forward voltage: 40V
Features of semiconductor devices: fast switching; high voltage
Max. off-state voltage: 14kV
Load current: 20mA
Max. load current: 0.3A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 150ns
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DD1600 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 16kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Case: Ø3x12mm
Mounting: THT
Max. off-state voltage: 16kV
Max. load current: 0.3A
Max. forward voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 3A
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: fast switching; high voltage
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 16kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Case: Ø3x12mm
Mounting: THT
Max. off-state voltage: 16kV
Max. load current: 0.3A
Max. forward voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 3A
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: fast switching; high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3808 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 1.05 EUR |
120+ | 0.6 EUR |
130+ | 0.55 EUR |
165+ | 0.43 EUR |
174+ | 0.41 EUR |
DD1800 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 18kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 18kV
Load current: 20mA
Max. load current: 0.3A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; high voltage
Max. forward voltage: 40V
Case: Ø3x12mm
Kind of package: Ammo Pack
Max. forward impulse current: 3A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 18kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 18kV
Load current: 20mA
Max. load current: 0.3A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; high voltage
Max. forward voltage: 40V
Case: Ø3x12mm
Kind of package: Ammo Pack
Max. forward impulse current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6427 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.19 EUR |
109+ | 0.66 EUR |
131+ | 0.55 EUR |
159+ | 0.45 EUR |
168+ | 0.43 EUR |
500+ | 0.42 EUR |
DD300 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
DD300-DIO THT universal diodes
DD300-DIO THT universal diodes
auf Bestellung 4567 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
171+ | 0.42 EUR |
275+ | 0.26 EUR |
291+ | 0.25 EUR |
DD600 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 6kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Type of diode: rectifying
Max. off-state voltage: 6kV
Max. forward voltage: 40V
Load current: 20mA
Max. load current: 0.3A
Semiconductor structure: single diode
Case: Ø3x12mm
Mounting: THT
Features of semiconductor devices: fast switching; high voltage
Max. forward impulse current: 3A
Kind of package: Ammo Pack
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 6kV; 20mA; Ammo Pack; Ifsm: 3A; Ø3x12mm
Type of diode: rectifying
Max. off-state voltage: 6kV
Max. forward voltage: 40V
Load current: 20mA
Max. load current: 0.3A
Semiconductor structure: single diode
Case: Ø3x12mm
Mounting: THT
Features of semiconductor devices: fast switching; high voltage
Max. forward impulse current: 3A
Kind of package: Ammo Pack
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5440 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
148+ | 0.49 EUR |
164+ | 0.44 EUR |
213+ | 0.34 EUR |
226+ | 0.32 EUR |
DI003N03SQ2 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±18V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±18V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI005P04PW-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; Idm: -40A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.4A
Pulsed drain current: -40A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; Idm: -40A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.4A
Pulsed drain current: -40A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DI006H03SQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.8/-3.3A
Pulsed drain current: 60...-30A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Gate charge: 11.7/11.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: MOSFET H-Bridge
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.8/-3.3A
Pulsed drain current: 60...-30A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Gate charge: 11.7/11.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: MOSFET H-Bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI006P02PW |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -36A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -36A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI008N09SQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 90V; 8A; Idm: 23A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 90V
Drain current: 8A
Pulsed drain current: 23A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 90V; 8A; Idm: 23A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 90V
Drain current: 8A
Pulsed drain current: 23A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DI010N03PW-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 50A
Power dissipation: 1.4W
Case: QFN2X2
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 50A
Power dissipation: 1.4W
Case: QFN2X2
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DI010N03PW |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 50A
Power dissipation: 1.4W
Case: QFN2X2
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 50A
Power dissipation: 1.4W
Case: QFN2X2
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI015N25D1 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.6A; Idm: 60A; 140W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.6A
Pulsed drain current: 60A
Power dissipation: 140W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.6A; Idm: 60A; 140W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.6A
Pulsed drain current: 60A
Power dissipation: 140W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DI017N06PQ-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
DI017N06PQ-AQ-DIO SMD N channel transistors
DI017N06PQ-AQ-DIO SMD N channel transistors
Produkt ist nicht verfügbar
DI018C03PT |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 17/-11A
Pulsed drain current: 120...-80A
Power dissipation: 10.8W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 13/53.3mΩ
Mounting: SMD
Gate charge: 12/20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 17/-11A
Pulsed drain current: 120...-80A
Power dissipation: 10.8W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 13/53.3mΩ
Mounting: SMD
Gate charge: 12/20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI018N65D1 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 54A
Power dissipation: 142W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 54A
Power dissipation: 142W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI020N06D1-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 50A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 50A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI020N06D1 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 275 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
211+ | 0.34 EUR |
250+ | 0.29 EUR |
275+ | 0.26 EUR |
DI020P06PT-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Drain-source voltage: -60V
Drain current: -20A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 29.7W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Drain-source voltage: -60V
Drain current: -20A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 29.7W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI020P06PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Drain-source voltage: -60V
Drain current: -20A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 29.7W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Drain-source voltage: -60V
Drain current: -20A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 29.7W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI025N06PT-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI025N06PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DI028N10PQ2-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Pulsed drain current: 130A
Power dissipation: 32.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Pulsed drain current: 130A
Power dissipation: 32.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI028P03PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -28A; Idm: -80A; 40W; QFN3X3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -28A
Pulsed drain current: -80A
Power dissipation: 40W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -28A; Idm: -80A; 40W; QFN3X3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -28A
Pulsed drain current: -80A
Power dissipation: 40W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI030N03D1 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 40W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 40W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DI035N10PT-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 130A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 130A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI035N10PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 130A
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 130A
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI035P02PT |
Hersteller: DIOTEC SEMICONDUCTOR
DI035P02PT-DIO SMD P channel transistors
DI035P02PT-DIO SMD P channel transistors
Produkt ist nicht verfügbar
DI035P04PT-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 25W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 25W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 25W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 25W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI035P04PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 40W; QFN3X3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Case: QFN3X3
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 40W; QFN3X3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Case: QFN3X3
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI038N04PQ2-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
DI038N04PQ2-AQ-DIO Multi channel transistors
DI038N04PQ2-AQ-DIO Multi channel transistors
Produkt ist nicht verfügbar
DI038N04PQ2 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
DI038N04PQ2-DIO Multi channel transistors
DI038N04PQ2-DIO Multi channel transistors
Produkt ist nicht verfügbar
DI040N03PT-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI040P04D1-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI040P04D1 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI040P04PT-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -160A
Power dissipation: 22.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -160A
Power dissipation: 22.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI040P04PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -160A
Power dissipation: 22.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -160A; 22.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -160A
Power dissipation: 22.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI045N03PT-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 280A
Power dissipation: 16W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 280A
Power dissipation: 16W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI045N03PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 280A
Power dissipation: 16W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 53/26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 280A
Power dissipation: 16W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 53/26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI045N10PQ-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 400A
Power dissipation: 40W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 400A
Power dissipation: 40W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI048N04PQ2-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI048N04PQ2 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI048N04PT-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 48.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 48.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI049N06PTK-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
DI049N06PTK-AQ-DIO SMD N channel transistors
DI049N06PTK-AQ-DIO SMD N channel transistors
Produkt ist nicht verfügbar
DI049N06PTK |
Hersteller: DIOTEC SEMICONDUCTOR
DI049N06PTK-DIO SMD N channel transistors
DI049N06PTK-DIO SMD N channel transistors
Produkt ist nicht verfügbar
DI050N04PT-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 37W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 37W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI050N04PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 37W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 37W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI050N06D1-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI050N06D1 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 379 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
139+ | 0.51 EUR |
154+ | 0.46 EUR |
203+ | 0.35 EUR |
215+ | 0.33 EUR |
DI050P02PT |
Hersteller: DIOTEC SEMICONDUCTOR
DI050P02PT-DIO SMD P channel transistors
DI050P02PT-DIO SMD P channel transistors
Produkt ist nicht verfügbar
DI050P03PT-AQ |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI050P03PT |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI064P04D1-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
DI064P04D1-AQ-DIO SMD P channel transistors
DI064P04D1-AQ-DIO SMD P channel transistors
Produkt ist nicht verfügbar
DI064P04D1 |
Hersteller: DIOTEC SEMICONDUCTOR
DI064P04D1-DIO SMD P channel transistors
DI064P04D1-DIO SMD P channel transistors
Produkt ist nicht verfügbar