DI010N03PW Diotec Semiconductor
auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.28 EUR |
| 2000+ | 0.26 EUR |
| 4000+ | 0.22 EUR |
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Technische Details DI010N03PW Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V 10A 0., Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-QFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V.
Weitere Produktangebote DI010N03PW nach Preis ab 0.46 EUR bis 1.04 EUR
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DI010N03PW | Hersteller : Diotec Semiconductor |
 Description: MOSFET POWERQFN 2X2 N 30V 10A 0.Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI010N03PW | Hersteller : Diotec Semiconductor |
Trans MOSFET N-CH 30V 10A |
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DI010N03PW | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 50A Power dissipation: 1.4W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DI010N03PW | Hersteller : Diotec Semiconductor |
Description: MOSFET POWERQFN 2X2 N 30V 10A 0. Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
Produkt ist nicht verfügbar |
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DI010N03PW | Hersteller : Diotec Semiconductor |
Description: MOSFET POWERQFN 2X2 N 30V 10A 0. Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
Produkt ist nicht verfügbar |
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DI010N03PW | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 50A Power dissipation: 1.4W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |