![DI018C03PT DI018C03PT](https://ce8dc832c.cloudimg.io/v7/_cdn_/D5/32/01/00/0/1057629_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=2308b0dfb892fa105dd167925a7f421cb80a90ed)
DI018C03PT DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 17/-11A
Pulsed drain current: 120...-80A
Power dissipation: 10.8W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 13/53.3mΩ
Mounting: SMD
Gate charge: 12/20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 17/-11A
Pulsed drain current: 120...-80A
Power dissipation: 10.8W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 13/53.3mΩ
Mounting: SMD
Gate charge: 12/20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DI018C03PT DIOTEC SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 30/-30V, Drain current: 17/-11A, Pulsed drain current: 120...-80A, Power dissipation: 10.8W, Case: QFN3X3, Gate-source voltage: ±20V, On-state resistance: 13/53.3mΩ, Mounting: SMD, Gate charge: 12/20nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI018C03PT
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
DI018C03PT | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 17/-11A Pulsed drain current: 120...-80A Power dissipation: 10.8W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 13/53.3mΩ Mounting: SMD Gate charge: 12/20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |