DI018C03PT

DI018C03PT DIOTEC SEMICONDUCTOR


Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 17/-11A
Pulsed drain current: 120...-80A
Power dissipation: 10.8W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 13/53.3mΩ
Mounting: SMD
Gate charge: 12/20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details DI018C03PT DIOTEC SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 30/-30V, Drain current: 17/-11A, Pulsed drain current: 120...-80A, Power dissipation: 10.8W, Case: QFN3X3, Gate-source voltage: ±20V, On-state resistance: 13/53.3mΩ, Mounting: SMD, Gate charge: 12/20nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote DI018C03PT

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DI018C03PT DI018C03PT Hersteller : DIOTEC SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 17/-11A; Idm: 120÷-80A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 17/-11A
Pulsed drain current: 120...-80A
Power dissipation: 10.8W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 13/53.3mΩ
Mounting: SMD
Gate charge: 12/20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar