DI003N03SQ2 Diotec Semiconductor
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Description: MOSFET SO-8 N 30V 0.05OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.6W
Current - Continuous Drain (Id) @ 25°C: 3A
Supplier Device Package: 8-SO
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.39 EUR |
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Technische Details DI003N03SQ2 Diotec Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 3A, Pulsed drain current: 9A, Power dissipation: 1.6W, Case: SO8, Gate-source voltage: ±18V, On-state resistance: 11mΩ, Mounting: SMD, Gate charge: 4.5nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI003N03SQ2 nach Preis ab 0.39 EUR bis 1.02 EUR
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DI003N03SQ2 | Hersteller : Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 1.6W Current - Continuous Drain (Id) @ 25°C: 3A Supplier Device Package: 8-SO |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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DI003N03SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Pulsed drain current: 9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±18V On-state resistance: 11mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI003N03SQ2 | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |
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![]() |
DI003N03SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Pulsed drain current: 9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±18V On-state resistance: 11mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |