Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 665 nach 1259
Foto | Bezeichnung | Hersteller | Beschreibung |
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BSP75GQ-13 | Diodes Incorporated |
Description: LOW SIDE INTELLIFET SOT223 T&R 4 Packaging: Tape & Reel (TR) Features: Auto Restart Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 385mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: SOT-223-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 128000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C39W-7-F | Diodes Incorporated |
Description: DIODE ZENER 39V 200MW SOT323 Packaging: Tape & Reel (TR) Tolerance: ±5.13% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 125°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C39Q-7-F | Diodes Incorporated |
Description: ZENER DIODE SOT23 T&R 3K Packaging: Tape & Reel (TR) Tolerance: ±5.13% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS4220V-7 | Diodes Incorporated |
Description: TRANS NPN 20V 2A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 260MHz Supplier Device Package: SOT-563 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP3129W6-7 | Diodes Incorporated |
Description: ACDC SINGLE ENDED CONT SOT26 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 9V ~ 26V Applications: Controller, ACDC Switching Power Supplies Current - Supply: 900µA Supplier Device Package: SOT-26 (Type CJ) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP3129W6-7 | Diodes Incorporated |
Description: ACDC SINGLE ENDED CONT SOT26 T&R Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 9V ~ 26V Applications: Controller, ACDC Switching Power Supplies Current - Supply: 900µA Supplier Device Package: SOT-26 (Type CJ) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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B260-13-F-2477 | Diodes Incorporated |
Description: DIODE Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SD1A240A-13 | Diodes Incorporated |
Description: THYRISTOR SMA T&R 5K Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 60 mA Voltage - Breakover: 230 ~ 250V Current - Breakover: 200 µA Supplier Device Package: SMA Current - Peak Output: 1 A |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMF4L13CA-7 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR PP Packaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 18.6A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-219AA Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMF4L13CAQ-7 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR PP Packaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 18.6A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-219AA Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MBRF20100CT | Diodes Incorporated |
Description: DIODE SCHOTTKY ITO220AB Packaging: Tube |
Produkt ist nicht verfügbar |
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1.5KE33CA-B | Diodes Incorporated |
Description: TVS DIODE 28.2VWM 45.7VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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MBR20100CT | Diodes Incorporated |
Description: DIODE ARR SCHOT 100V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 50 nA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MBR20100CTP | Diodes Incorporated |
Description: DIODE ARR SCHOT 100V 10A ITO220S Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220S Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
Produkt ist nicht verfügbar |
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PI6C5946002ZHIEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:2 3GHZ 16TQFN Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: CML Type: Fanout Buffer (Distribution), Data Input: CML, LVDS, SSTL Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.375V ~ 2.625V, 3V ~ 3.6V Ratio - Input:Output: 1:2 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-TQFN (3x3) Frequency - Max: 3 GHz |
Produkt ist nicht verfügbar |
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FL1220027Q | Diodes Incorporated |
Description: CRYSTAL 12.2880MHZ 12PF SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 12pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Ratings: AEC-Q200 Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 100 Ohms Frequency: 12.288 MHz |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FL1220027Q | Diodes Incorporated |
Description: CRYSTAL 12.2880MHZ 12PF SMD Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Load Capacitance: 12pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Ratings: AEC-Q200 Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 100 Ohms Frequency: 12.288 MHz |
auf Bestellung 4985 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52C39LP-7B | Diodes Incorporated |
Description: DIODE ZENER 39V 250MW 2DFN Packaging: Tape & Reel (TR) Tolerance: ±5.13% Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: X1-DFN1006-2 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V |
auf Bestellung 1110000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52C39LP-7B | Diodes Incorporated |
Description: DIODE ZENER 39V 250MW 2DFN Packaging: Cut Tape (CT) Tolerance: ±5.13% Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: X1-DFN1006-2 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V |
auf Bestellung 1110000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52HC8V2WFQ-7 | Diodes Incorporated |
Description: Zener Diode SOD123F T&R 3K Packaging: Bulk Tolerance: ±6.04% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-123F Grade: Automotive Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MMSZ5229BQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 3K Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1J | Diodes Incorporated |
Description: DIODE GEN PURP 600V 1A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1.5KE18CA-B | Diodes Incorporated |
Description: TVS DIODE 15.3VWM 25.2VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 59.5A Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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SMCJ6.5CA-13-F | Diodes Incorporated |
Description: TVS DIODE 6.5VWM 11.2VC SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 133.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCJ6.5CA-13-F | Diodes Incorporated |
Description: TVS DIODE 6.5VWM 11.2VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 133.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
auf Bestellung 8990 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU804 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 400V 8A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR15U30SP5-13 | Diodes Incorporated |
Description: DIODE SBR 30V 15A POWERDI5 Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 15A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
Produkt ist nicht verfügbar |
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SBR15U30SP5-13 | Diodes Incorporated |
Description: DIODE SBR 30V 15A POWERDI5 Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 15A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
auf Bestellung 3697 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR15U30SP5Q-13 | Diodes Incorporated |
Description: DIODE SBR 30V 15A POWERDI5 Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Capacitance @ Vr, F: 400pF @ 30V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN65D8LT-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT523 T&R Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V |
auf Bestellung 149568 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN63D1LT-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 320MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN63D1LT-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 320MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
auf Bestellung 169689 Stücke: Lieferzeit 10-14 Tag (e) |
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PDU620CT-13 | Diodes Incorporated |
Description: DIODE ARRAY GP 200V 3A POWERDI5 Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDU620CT-13 | Diodes Incorporated |
Description: DIODE ARRAY GP 200V 3A POWERDI5 Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 19400 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN601LT-13 | Diodes Incorporated |
Description: 2N7002 FAMILY SOT523 T&R 10K Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 356mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V |
Produkt ist nicht verfügbar |
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S1614E-25.0000(T) | Diodes Incorporated |
Description: CLOCK SAW OSCILLATOR SEAM7050 T& Packaging: Tape & Reel (TR) Type: XO (Standard) Base Resonator: Crystal |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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1.5KE68CA-B | Diodes Incorporated |
Description: TVS DIODE 58.1VWM 92VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 16.3A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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FMMT614QTA | Diodes Incorporated |
Description: TRANS NPN DARL 100V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FMMT614QTA | Diodes Incorporated |
Description: TRANS NPN DARL 100V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW Qualification: AEC-Q101 |
auf Bestellung 17989 Stücke: Lieferzeit 10-14 Tag (e) |
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AL17052V5W5-7 | Diodes Incorporated |
Description: LED OFFLINE DRIVER SOT25 T&R 3K Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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AL17052V5W5-7 | Diodes Incorporated |
Description: LED OFFLINE DRIVER SOT25 T&R 3K Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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1.5KE36A-B | Diodes Incorporated |
Description: TVS DIODE 30.8VWM 49.9VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 30A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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PI6CG33202CZDIEX-13R | Diodes Incorporated |
Description: IC CLOCK GENERATOR 24TQFN Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL Frequency - Max: 100MHz Type: Clock Generator Input: CMOS, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:2 Differential - Input:Output: No/Yes Supplier Device Package: 24-TQFN (4x4) PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 157500 Stücke: Lieferzeit 10-14 Tag (e) |
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PI6CG33202CZDIEX-13R | Diodes Incorporated |
Description: IC CLOCK GENERATOR 24TQFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL Frequency - Max: 100MHz Type: Clock Generator Input: CMOS, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:2 Differential - Input:Output: No/Yes Supplier Device Package: 24-TQFN (4x4) PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 160350 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU1010 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 10A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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MMSZ5241BQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 3K Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V Qualification: AEC-Q101 |
auf Bestellung 336000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ9717-7-79 | Diodes Incorporated |
Description: DIODE ZENER 43V 500MW SOD123 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 32.6 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SBR140S1FQ-7 | Diodes Incorporated |
Description: DIODE SBR 40V 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Qualification: AEC-Q101 |
auf Bestellung 2190000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF10S | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1V 1A DFS Packaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
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DF04S | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 400V 1A DFS Packaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 9104 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT8008LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 80V 16A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta), 23.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT8008LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 80V 16A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta), 23.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V |
auf Bestellung 15395 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH8008LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 91A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT8008LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 83A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH8008SFG-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V |
Produkt ist nicht verfügbar |
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DMTH8008SFG-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V |
Produkt ist nicht verfügbar |
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DMT8008LK3-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT8008SK3-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V |
Produkt ist nicht verfügbar |
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DMTH8008SFGQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMTH8008SFGQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP75GQ-13 |
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 128000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.51 EUR |
8000+ | 0.47 EUR |
12000+ | 0.46 EUR |
28000+ | 0.44 EUR |
BZX84C39W-7-F |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Description: DIODE ZENER 39V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.098 EUR |
6000+ | 0.094 EUR |
9000+ | 0.081 EUR |
30000+ | 0.08 EUR |
BZX84C39Q-7-F |
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
Description: ZENER DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.056 EUR |
6000+ | 0.053 EUR |
9000+ | 0.045 EUR |
DSS4220V-7 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 2A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 260MHz
Supplier Device Package: SOT-563
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: TRANS NPN 20V 2A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 260MHz
Supplier Device Package: SOT-563
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.13 EUR |
6000+ | 0.12 EUR |
9000+ | 0.11 EUR |
AP3129W6-7 |
Hersteller: Diodes Incorporated
Description: ACDC SINGLE ENDED CONT SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 26V
Applications: Controller, ACDC Switching Power Supplies
Current - Supply: 900µA
Supplier Device Package: SOT-26 (Type CJ)
Description: ACDC SINGLE ENDED CONT SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 26V
Applications: Controller, ACDC Switching Power Supplies
Current - Supply: 900µA
Supplier Device Package: SOT-26 (Type CJ)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.42 EUR |
AP3129W6-7 |
Hersteller: Diodes Incorporated
Description: ACDC SINGLE ENDED CONT SOT26 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 26V
Applications: Controller, ACDC Switching Power Supplies
Current - Supply: 900µA
Supplier Device Package: SOT-26 (Type CJ)
Description: ACDC SINGLE ENDED CONT SOT26 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 26V
Applications: Controller, ACDC Switching Power Supplies
Current - Supply: 900µA
Supplier Device Package: SOT-26 (Type CJ)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.09 EUR |
19+ | 0.95 EUR |
25+ | 0.89 EUR |
100+ | 0.73 EUR |
250+ | 0.68 EUR |
500+ | 0.58 EUR |
1000+ | 0.46 EUR |
B260-13-F-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SD1A240A-13 |
Hersteller: Diodes Incorporated
Description: THYRISTOR SMA T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 230 ~ 250V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
Description: THYRISTOR SMA T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 230 ~ 250V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.14 EUR |
SMF4L13CA-7 |
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
9000+ | 0.13 EUR |
SMF4L13CAQ-7 |
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBRF20100CT |
Produkt ist nicht verfügbar
1.5KE33CA-B |
Hersteller: Diodes Incorporated
Description: TVS DIODE 28.2VWM 45.7VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 28.2VWM 45.7VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
MBR20100CT |
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 nA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 nA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MBR20100CTP |
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE ARR SCHOT 100V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
PI6C5946002ZHIEX |
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:2 3GHZ 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: CML
Type: Fanout Buffer (Distribution), Data
Input: CML, LVDS, SSTL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V, 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TQFN (3x3)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:2 3GHZ 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: CML
Type: Fanout Buffer (Distribution), Data
Input: CML, LVDS, SSTL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V, 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TQFN (3x3)
Frequency - Max: 3 GHz
Produkt ist nicht verfügbar
FL1220027Q |
Hersteller: Diodes Incorporated
Description: CRYSTAL 12.2880MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Ratings: AEC-Q200
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 12.288 MHz
Description: CRYSTAL 12.2880MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Ratings: AEC-Q200
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 12.288 MHz
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.6 EUR |
FL1220027Q |
Hersteller: Diodes Incorporated
Description: CRYSTAL 12.2880MHZ 12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Ratings: AEC-Q200
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 12.288 MHz
Description: CRYSTAL 12.2880MHZ 12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Ratings: AEC-Q200
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 12.288 MHz
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.2 EUR |
18+ | 1 EUR |
50+ | 0.9 EUR |
100+ | 0.8 EUR |
500+ | 0.76 EUR |
1000+ | 0.64 EUR |
BZT52C39LP-7B |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: X1-DFN1006-2
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Description: DIODE ZENER 39V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: X1-DFN1006-2
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
auf Bestellung 1110000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.079 EUR |
30000+ | 0.078 EUR |
50000+ | 0.07 EUR |
100000+ | 0.062 EUR |
250000+ | 0.06 EUR |
BZT52C39LP-7B |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: X1-DFN1006-2
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Description: DIODE ZENER 39V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: X1-DFN1006-2
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
auf Bestellung 1110000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
43+ | 0.42 EUR |
100+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
5000+ | 0.095 EUR |
BZT52HC8V2WFQ-7 |
Hersteller: Diodes Incorporated
Description: Zener Diode SOD123F T&R 3K
Packaging: Bulk
Tolerance: ±6.04%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Description: Zener Diode SOD123F T&R 3K
Packaging: Bulk
Tolerance: ±6.04%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5229BQ-7-F |
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
77+ | 0.23 EUR |
158+ | 0.11 EUR |
500+ | 0.093 EUR |
1000+ | 0.065 EUR |
ES1J |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
1.5KE18CA-B |
Hersteller: Diodes Incorporated
Description: TVS DIODE 15.3VWM 25.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 15.3VWM 25.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SMCJ6.5CA-13-F |
Hersteller: Diodes Incorporated
Description: TVS DIODE 6.5VWM 11.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 6.5VWM 11.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.36 EUR |
6000+ | 0.34 EUR |
SMCJ6.5CA-13-F |
Hersteller: Diodes Incorporated
Description: TVS DIODE 6.5VWM 11.2VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 6.5VWM 11.2VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 8990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.48 EUR |
1000+ | 0.41 EUR |
GBU804 |
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.52 EUR |
20+ | 2.05 EUR |
100+ | 1.6 EUR |
SBR15U30SP5-13 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
SBR15U30SP5-13 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 3697 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.21 EUR |
17+ | 1.05 EUR |
100+ | 0.72 EUR |
500+ | 0.6 EUR |
1000+ | 0.51 EUR |
2000+ | 0.46 EUR |
SBR15U30SP5Q-13 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 400pF @ 30V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 400pF @ 30V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN65D8LT-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
auf Bestellung 149568 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
80+ | 0.22 EUR |
163+ | 0.11 EUR |
500+ | 0.09 EUR |
1000+ | 0.063 EUR |
2000+ | 0.054 EUR |
5000+ | 0.05 EUR |
DMN63D1LT-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.19 EUR |
50000+ | 0.18 EUR |
DMN63D1LT-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 169689 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.84 EUR |
28+ | 0.65 EUR |
100+ | 0.39 EUR |
500+ | 0.36 EUR |
1000+ | 0.24 EUR |
2000+ | 0.22 EUR |
PDU620CT-13 |
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.88 EUR |
10000+ | 0.86 EUR |
PDU620CT-13 |
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 19400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.24 EUR |
10+ | 1.82 EUR |
100+ | 1.42 EUR |
500+ | 1.2 EUR |
1000+ | 0.98 EUR |
2000+ | 0.92 EUR |
DMN601LT-13 |
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT523 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 356mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Description: 2N7002 FAMILY SOT523 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 356mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Produkt ist nicht verfügbar
S1614E-25.0000(T) |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.91 EUR |
1.5KE68CA-B |
Hersteller: Diodes Incorporated
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
FMMT614QTA |
Hersteller: Diodes Incorporated
Description: TRANS NPN DARL 100V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: TRANS NPN DARL 100V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.3 EUR |
6000+ | 0.28 EUR |
9000+ | 0.26 EUR |
FMMT614QTA |
Hersteller: Diodes Incorporated
Description: TRANS NPN DARL 100V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: TRANS NPN DARL 100V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 17989 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.88 EUR |
24+ | 0.75 EUR |
100+ | 0.52 EUR |
500+ | 0.41 EUR |
1000+ | 0.33 EUR |
AL17052V5W5-7 |
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER SOT25 T&R 3K
Packaging: Tape & Reel (TR)
Description: LED OFFLINE DRIVER SOT25 T&R 3K
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
1.5KE36A-B |
Hersteller: Diodes Incorporated
Description: TVS DIODE 30.8VWM 49.9VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 30.8VWM 49.9VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
PI6CG33202CZDIEX-13R |
Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 157500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3500+ | 3.53 EUR |
PI6CG33202CZDIEX-13R |
Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 160350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.02 EUR |
10+ | 6.31 EUR |
25+ | 5.97 EUR |
100+ | 5.17 EUR |
250+ | 4.91 EUR |
500+ | 4.4 EUR |
1000+ | 3.71 EUR |
GBU1010 |
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
MMSZ5241BQ-7-F |
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Qualification: AEC-Q101
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Qualification: AEC-Q101
auf Bestellung 336000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
76+ | 0.23 EUR |
140+ | 0.13 EUR |
500+ | 0.099 EUR |
1000+ | 0.069 EUR |
DDZ9717-7-79 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SBR140S1FQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SBR 40V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 2190000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
9000+ | 0.15 EUR |
75000+ | 0.14 EUR |
DF10S |
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.83 EUR |
50+ | 1.48 EUR |
DF04S |
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 9104 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
50+ | 0.59 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
1000+ | 0.28 EUR |
2000+ | 0.25 EUR |
5000+ | 0.24 EUR |
DMT8008LFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Description: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.91 EUR |
6000+ | 0.87 EUR |
10000+ | 0.85 EUR |
DMT8008LFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Description: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
auf Bestellung 15395 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.2 EUR |
10+ | 1.81 EUR |
100+ | 1.4 EUR |
500+ | 1.19 EUR |
1000+ | 0.97 EUR |
DMTH8008LPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 91A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Description: MOSFET N-CH 80V 91A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.6 EUR |
DMT8008LPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 83A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Description: MOSFET N-CH 80V 83A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.61 EUR |
5000+ | 0.58 EUR |
DMTH8008SFG-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Produkt ist nicht verfügbar
DMTH8008SFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Produkt ist nicht verfügbar
DMT8008LK3-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.83 EUR |
DMT8008SK3-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Produkt ist nicht verfügbar
DMTH8008SFGQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMTH8008SFGQ-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.87 EUR |
6000+ | 0.83 EUR |
10000+ | 0.81 EUR |