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DMT8008SK3-13 Diodes Inc


dmt8008sk3.pdf Hersteller: Diodes Inc
MOSFET BVDSS: 61V100V TO252 T&R 2.5K
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Technische Details DMT8008SK3-13 Diodes Inc

Description: MOSFET BVDSS: 61V~100V TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V.

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DMT8008SK3-13 DMT8008SK3-13 Hersteller : Diodes Incorporated DMT8008SK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Produkt ist nicht verfügbar
DMT8008SK3-13 Hersteller : Diodes Incorporated DMT8008SK3-3103825.pdf MOSFETs MOSFET BVDSS: 61V-100V TO252 T&R 2.5K
Produkt ist nicht verfügbar