Produkte > DIODES INCORPORATED > DMN65D8LT-13
DMN65D8LT-13

DMN65D8LT-13 Diodes Incorporated

DMN65D8LT.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.042 EUR
30000+ 0.041 EUR
50000+ 0.037 EUR
100000+ 0.033 EUR
Mindestbestellmenge: 10000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN65D8LT-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V.

Weitere Produktangebote DMN65D8LT-13 nach Preis ab 0.03 EUR bis 0.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN65D8LT-13 DMN65D8LT-13 Hersteller : Diodes Incorporated DMN65D8LT.pdf Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
auf Bestellung 149568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
80+ 0.22 EUR
163+ 0.11 EUR
500+ 0.09 EUR
1000+ 0.063 EUR
2000+ 0.054 EUR
5000+ 0.05 EUR
Mindestbestellmenge: 53
DMN65D8LT-13 DMN65D8LT-13 Hersteller : Diodes Incorporated DIOD_S_A0012955996_1-2544003.pdf MOSFET MOSFET BVDSS:41V-60V
auf Bestellung 9840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+0.34 EUR
13+ 0.23 EUR
100+ 0.15 EUR
1000+ 0.065 EUR
2500+ 0.058 EUR
10000+ 0.042 EUR
20000+ 0.039 EUR
Mindestbestellmenge: 9
DMN65D8LT-13 Hersteller : Diodes Zetex DMN65D8LT.pdf DMN65D8LT-13
auf Bestellung 160000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.03 EUR
Mindestbestellmenge: 10000