Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75523) > Seite 574 nach 1259
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AP7362-18SP-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-SO-EP Voltage - Output (Min/Fixed): 1.8V Control Features: Current Limit, Enable PSRR: 65dB ~ 61dB (120Hz ~ 1kHz) Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 1.3 mA |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DMN2300UFL4-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.39W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1310-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 189000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DMN2300UFL4-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.39W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1310-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 191970 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DMN2300UFD-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V |
auf Bestellung 630000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DMN2300UFD-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V |
auf Bestellung 632708 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
AP62300Z6-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 750kHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: SOT-563 Synchronous Rectifier: Yes Voltage - Output (Max): 7V Voltage - Input (Min): 4.2V Voltage - Output (Min/Fixed): 0.8V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 11709 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
TB2300H-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Capacitance: 80pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 265V Voltage - Off State: 190V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
Produkt ist nicht verfügbar |
|||||||||||||||||||
DMN2300UFL4Q-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1310-6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||||
![]() |
TB2300M-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Capacitance: 60pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 265V Voltage - Off State: 190V Voltage - On State: 3.5 V Supplier Device Package: SMB Grade: Automotive Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 250 A Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
BZT52C5V6Q-7-F | Diodes Incorporated |
![]() Tolerance: ±7.14% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Qualification: AEC-Q101 |
auf Bestellung 2349900 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
BZT52C5V6TQ-7-F | Diodes Incorporated |
![]() Tolerance: ±7.14% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Qualification: AEC-Q101 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
BZT52C5V6TQ-7-F | Diodes Incorporated |
![]() Tolerance: ±7.14% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Qualification: AEC-Q101 |
auf Bestellung 26196 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
3.0SMCJ28AQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Capacitance @ Frequency: 1800pF @ 1MHz Current - Peak Pulse (10/1000µs): 66.1A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: Yes Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
3.0SMCJ48A-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 38.8A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
3.0SMCJ48AQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 38.8A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
TB1500M-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Capacitance: 90pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 250 A |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
TB1500M-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Capacitance: 90pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 250 A |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
TB1500M-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Capacitance: 90pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 250 A |
auf Bestellung 5704 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
SBR10H300D1-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (DPAK) Type TH Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
SBR10H300D1-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (DPAK) Type TH Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
auf Bestellung 2953 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
DMWSH120H28SM4Q | Diodes Incorporated |
Description: SIC MOSFET BVDSS: >1000V TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 50A, 15V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 156.3 nC @ 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||||
KJ3270017Q | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.3V Frequency: 32.768 kHz Base Resonator: Crystal |
auf Bestellung 798000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||||
KJ3270017Q | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.3V Frequency: 32.768 kHz Base Resonator: Crystal |
auf Bestellung 800285 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||||
BAS521Q-13-2462 | Diodes Incorporated |
Description: DIODE Packaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 150 nA @ 250 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||||||||||||||||||||
![]() |
HX31C50004 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 95°C Voltage - Supply: 2.5V Frequency: 125 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
HX31A00004 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: LVCMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V Current - Supply (Max): 40mA Height - Seated (Max): 0.045" (1.15mm) Frequency: 100 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
T4M10T600B | Diodes Incorporated |
![]() Packaging: Tube |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DXT5401-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1 W |
auf Bestellung 102500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DXT5401-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1 W |
auf Bestellung 104858 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
SXTA42TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W |
auf Bestellung 11416 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DDTC123EE-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: SOT-523 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DDTC123EE-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: SOT-523 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||||||
![]() |
DDTC123EE-7-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: SOT-523 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
AL8853AQS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 400kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Backlight, Lighting Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: 8-SO Dimming: Analog, PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 380000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
AL8853AQS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 400kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Backlight, Lighting Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: 8-SO Dimming: Analog, PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 382024 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
NX2511E0080.000000 | Diodes Incorporated |
Description: XTAL OSC XO 80.0000MHZ CMOS SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 3.3V Current - Supply (Max): 60mA Height - Seated (Max): 0.039" (1.00mm) Frequency: 80 MHz Base Resonator: Crystal |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
NX2512A0100.000000 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±20ppm Voltage - Supply: 2.5V Current - Supply (Max): 60mA Height - Seated (Max): 0.039" (1.00mm) Frequency: 100 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
ZX5T851GQTC | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.2 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 355811 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
ZX5T951GQTC | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 120MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.6 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 107879 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
PK5000004 | Diodes Incorporated |
Description: XTAL OSC XO 50.0000MHZ LVPECL Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Current - Supply (Max): 60mA Height - Seated (Max): 0.041" (1.05mm) Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
|||||||||||||||||||
DGD2388MS20-13 | Diodes Incorporated |
![]() Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 20-SO Type TH Rise / Fall Time (Typ): 45ns, 25ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 420mA, 750mA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 40490 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||||
![]() |
PDS4150-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS360-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS760-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 7A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 7 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS3200-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS5100-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS340-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS5100H-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS1045-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 45 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS3100-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS1040L-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS4200H-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
PDS1040-13-2477 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A Current - Reverse Leakage @ Vr: 700 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
DMP2110UQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3292410 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
DMTH46M7SFVW-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
DMTH46M7SFVW-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
DMTH48M3SFVW-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
DMT47M2SFVW-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
FL2500338 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±15ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 50 Ohms Frequency: 25 MHz |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
BC857CQ-7-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
|
AP7362-18SP-13 |
![]() |
Hersteller: Diodes Incorporated
Description: LDO CMOS HICURR SO-8EP T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 1.3 mA
Description: LDO CMOS HICURR SO-8EP T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 1.3 mA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.33 EUR |
5000+ | 0.31 EUR |
DMN2300UFL4-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.39W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.39W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 189000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.19 EUR |
75000+ | 0.18 EUR |
DMN2300UFL4-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.39W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.39W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 191970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
28+ | 0.63 EUR |
100+ | 0.38 EUR |
500+ | 0.35 EUR |
1000+ | 0.24 EUR |
DMN2300UFD-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.21A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V
Description: MOSFET N-CH 20V 1.21A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V
auf Bestellung 630000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
9000+ | 0.15 EUR |
30000+ | 0.14 EUR |
75000+ | 0.13 EUR |
DMN2300UFD-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.21A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V
Description: MOSFET N-CH 20V 1.21A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V
auf Bestellung 632708 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
37+ | 0.49 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.18 EUR |
AP62300Z6-7 |
![]() |
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 3A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 750kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: SOT-563
Synchronous Rectifier: Yes
Voltage - Output (Max): 7V
Voltage - Input (Min): 4.2V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 3A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 750kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: SOT-563
Synchronous Rectifier: Yes
Voltage - Output (Max): 7V
Voltage - Input (Min): 4.2V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 11709 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
29+ | 0.62 EUR |
31+ | 0.57 EUR |
100+ | 0.46 EUR |
250+ | 0.43 EUR |
500+ | 0.36 EUR |
1000+ | 0.28 EUR |
TB2300H-13-F |
![]() |
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 265V
Voltage - Off State: 190V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 190V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 265V
Voltage - Off State: 190V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
DMN2300UFL4Q-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1310-6
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1310-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.19 EUR |
30000+ | 0.18 EUR |
75000+ | 0.17 EUR |
TB2300M-13-F |
![]() |
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 265V
Voltage - Off State: 190V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Grade: Automotive
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Qualification: AEC-Q101
Description: THYRISTOR 190V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 265V
Voltage - Off State: 190V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Grade: Automotive
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZT52C5V6Q-7-F |
![]() |
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 2349900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
73+ | 0.24 EUR |
150+ | 0.12 EUR |
500+ | 0.099 EUR |
1000+ | 0.068 EUR |
BZT52C5V6TQ-7-F |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V SOD523 T&R 3K
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V SOD523 T&R 3K
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.073 EUR |
6000+ | 0.068 EUR |
9000+ | 0.056 EUR |
BZT52C5V6TQ-7-F |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V SOD523 T&R 3K
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V SOD523 T&R 3K
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 26196 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
59+ | 0.3 EUR |
121+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.084 EUR |
3.0SMCJ28AQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 1800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 1800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
3.0SMCJ48A-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
3.0SMCJ48AQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TB1500M-13-F |
![]() |
Hersteller: Diodes Incorporated
Description: THYRISTOR 140V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Description: THYRISTOR 140V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
TB1500M-13-F |
![]() |
Hersteller: Diodes Incorporated
Description: THYRISTOR 140V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Description: THYRISTOR 140V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.7 EUR |
TB1500M-13-F |
![]() |
Hersteller: Diodes Incorporated
Description: THYRISTOR 140V 250A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Description: THYRISTOR 140V 250A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
auf Bestellung 5704 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.69 EUR |
13+ | 1.38 EUR |
100+ | 1.08 EUR |
500+ | 0.91 EUR |
1000+ | 0.74 EUR |
SBR10H300D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 300V 10A TO252 TYPE TH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK) Type TH
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE SBR 300V 10A TO252 TYPE TH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK) Type TH
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.56 EUR |
SBR10H300D1-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 300V 10A TO252 TYPE TH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK) Type TH
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE SBR 300V 10A TO252 TYPE TH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK) Type TH
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
auf Bestellung 2953 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.46 EUR |
14+ | 1.27 EUR |
100+ | 0.88 EUR |
500+ | 0.74 EUR |
1000+ | 0.63 EUR |
DMWSH120H28SM4Q |
Hersteller: Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 50A, 15V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 156.3 nC @ 15 V
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 50A, 15V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 156.3 nC @ 15 V
Produkt ist nicht verfügbar
KJ3270017Q |
![]() |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 32.7680 KHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.3V
Frequency: 32.768 kHz
Base Resonator: Crystal
Description: XTAL OSC XO 32.7680 KHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.3V
Frequency: 32.768 kHz
Base Resonator: Crystal
auf Bestellung 798000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.07 EUR |
6000+ | 1.99 EUR |
KJ3270017Q |
![]() |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 32.7680 KHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.3V
Frequency: 32.768 kHz
Base Resonator: Crystal
Description: XTAL OSC XO 32.7680 KHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.3V
Frequency: 32.768 kHz
Base Resonator: Crystal
auf Bestellung 800285 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.33 EUR |
10+ | 3.18 EUR |
50+ | 3.1 EUR |
100+ | 2.66 EUR |
500+ | 2.58 EUR |
1000+ | 2.18 EUR |
BAS521Q-13-2462 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 150 nA @ 250 V
Qualification: AEC-Q101
Description: DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 150 nA @ 250 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
HX31C50004 |
![]() |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 125.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
HX31A00004 |
![]() |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 100.0000MHZ LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 40mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 100 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 100.0000MHZ LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 40mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 100 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
T4M10T600B |
![]() |
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.07 EUR |
50+ | 0.86 EUR |
DXT5401-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 0.6A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Description: TRANS PNP 150V 0.6A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
auf Bestellung 102500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.23 EUR |
5000+ | 0.22 EUR |
12500+ | 0.2 EUR |
62500+ | 0.19 EUR |
DXT5401-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 0.6A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Description: TRANS PNP 150V 0.6A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
auf Bestellung 104858 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
31+ | 0.58 EUR |
100+ | 0.4 EUR |
500+ | 0.31 EUR |
1000+ | 0.25 EUR |
SXTA42TA |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS NPN 300V 0.5A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Description: TRANS NPN 300V 0.5A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
auf Bestellung 11416 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
30+ | 0.59 EUR |
100+ | 0.35 EUR |
500+ | 0.33 EUR |
DDTC123EE-7 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
DDTC123EE-7 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)DDTC123EE-7-F |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.093 EUR |
15000+ | 0.079 EUR |
30000+ | 0.074 EUR |
AL8853AQS-13 |
![]() |
Hersteller: Diodes Incorporated
Description: LED MV INT SWITCH SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight, Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Description: LED MV INT SWITCH SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight, Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 380000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.37 EUR |
8000+ | 0.35 EUR |
12000+ | 0.33 EUR |
28000+ | 0.32 EUR |
AL8853AQS-13 |
![]() |
Hersteller: Diodes Incorporated
Description: LED MV INT SWITCH SO-8 T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight, Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Description: LED MV INT SWITCH SO-8 T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight, Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 382024 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
21+ | 0.85 EUR |
25+ | 0.8 EUR |
100+ | 0.65 EUR |
250+ | 0.6 EUR |
500+ | 0.51 EUR |
1000+ | 0.41 EUR |
NX2511E0080.000000 |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 80.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 80 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 80.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 80 MHz
Base Resonator: Crystal
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.52 EUR |
NX2512A0100.000000 |
![]() |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 100 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 100 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
ZX5T851GQTC |
![]() |
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR SOT223 T&
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
Grade: Automotive
Qualification: AEC-Q101
Description: PWR LOW SAT TRANSISTOR SOT223 T&
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 355811 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
29+ | 0.61 EUR |
100+ | 0.43 EUR |
500+ | 0.33 EUR |
1000+ | 0.27 EUR |
2000+ | 0.24 EUR |
ZX5T951GQTC |
![]() |
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR SOT223 T&
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q101
Description: PWR LOW SAT TRANSISTOR SOT223 T&
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 107879 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.9 EUR |
23+ | 0.78 EUR |
100+ | 0.54 EUR |
500+ | 0.42 EUR |
1000+ | 0.34 EUR |
2000+ | 0.31 EUR |
PK5000004 |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.041" (1.05mm)
Frequency: 50 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 50.0000MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.041" (1.05mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
DGD2388MS20-13 |
![]() |
Hersteller: Diodes Incorporated
Description: HV Gate Driver SO-20 T&R 1.5K
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SO Type TH
Rise / Fall Time (Typ): 45ns, 25ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 420mA, 750mA
Grade: Automotive
Qualification: AEC-Q100
Description: HV Gate Driver SO-20 T&R 1.5K
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SO Type TH
Rise / Fall Time (Typ): 45ns, 25ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 420mA, 750mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 40490 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.21 EUR |
10+ | 3.77 EUR |
25+ | 3.56 EUR |
100+ | 3.03 EUR |
250+ | 2.85 EUR |
500+ | 2.49 EUR |
1000+ | 2.06 EUR |
2500+ | 1.92 EUR |
5000+ | 1.85 EUR |
PDS4150-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDS360-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
PDS760-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 7 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 7 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
PDS3200-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDS5100-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDS340-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDS5100H-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Produkt ist nicht verfügbar
PDS1045-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Produkt ist nicht verfügbar
PDS3100-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDS1040L-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDS4200H-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDS1040-13-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMP2110UQ-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3292410 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
36+ | 0.5 EUR |
100+ | 0.25 EUR |
500+ | 0.21 EUR |
1000+ | 0.15 EUR |
DMTH46M7SFVW-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Produkt ist nicht verfügbar
DMTH46M7SFVW-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Produkt ist nicht verfügbar
DMTH48M3SFVW-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
DMT47M2SFVW-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
FL2500338 |
![]() |
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 25 MHz
Produkt ist nicht verfügbar
BC857CQ-7-F |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PNP SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.1 EUR |
9000+ | 0.087 EUR |
30000+ | 0.086 EUR |