DMWSH120H28SM4Q Diodes Incorporated
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 56.43 EUR |
10+ | 50.14 EUR |
30+ | 46.78 EUR |
60+ | 45.32 EUR |
120+ | 43.84 EUR |
270+ | 40.94 EUR |
510+ | 37.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMWSH120H28SM4Q Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 28.5mOhm @ 50A, 15V, Power Dissipation (Max): 429W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 17.7mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 156.3 nC @ 15 V.
Weitere Produktangebote DMWSH120H28SM4Q
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
DMWSH120H28SM4Q | Hersteller : Diodes Inc |
![]() |
Produkt ist nicht verfügbar |
||
DMWSH120H28SM4Q | Hersteller : Diodes Incorporated |
Description: SIC MOSFET BVDSS: >1000V TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 50A, 15V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 156.3 nC @ 15 V |
Produkt ist nicht verfügbar |