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DMC1028UFDB-7 DMC1028UFDB-7 Diodes Incorporated DMC1028UFDB.pdf Description: MOSFET N/P-CH 12V 6A/3.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 67572 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
17+ 1.1 EUR
100+ 0.76 EUR
500+ 0.63 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 14
DMC1029UFDB-7 DMC1029UFDB-7 Diodes Incorporated DMC1029UFDB.pdf Description: MOSFET N/P-CH 12V 6UDFN
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
DMC2041UFDB-7 DMC2041UFDB-7 Diodes Incorporated DMC2041UFDB.pdf Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 20639 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+ 1.18 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
DMC3400SDW-7 DMC3400SDW-7 Diodes Incorporated DMC3400SDW.pdf Description: MOSFET N/P-CH 30V 0.65A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 7020542 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
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DMG3404L-7 DMG3404L-7 Diodes Incorporated DMG3404L.pdf Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
auf Bestellung 2134138 Stücke:
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25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
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DMG3406L-7 DMG3406L-7 Diodes Incorporated DMG3406L.pdf Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
auf Bestellung 104044 Stücke:
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27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMN1029UFDB-7 DMN1029UFDB-7 Diodes Incorporated DMN1029UFDB.pdf Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 314398 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
43+ 0.41 EUR
100+ 0.25 EUR
500+ 0.23 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 34
DMN10H170SFDE-7 DMN10H170SFDE-7 Diodes Incorporated DMN10H170SFDE.pdf Description: MOSFET N-CH 100V 2.9A 6UDFN
auf Bestellung 288015000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN10H170SVT-7 DMN10H170SVT-7 Diodes Incorporated DMN10H170SVT.pdf Description: MOSFET N-CH 100V 2.6A TSOT26
Produkt ist nicht verfügbar
DMN2041UFDB-7 DMN2041UFDB-7 Diodes Incorporated DMN2041UFDB.pdf Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Produkt ist nicht verfügbar
DMN2046U-7 DMN2046U-7 Diodes Incorporated DMN2046U.pdf Description: MOSFET N-CH 20V 3.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
auf Bestellung 263839 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
58+ 0.3 EUR
115+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 42
DMN3042L-7 DMN3042L-7 Diodes Incorporated DMN3042L.pdf Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 884961 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 25
DMN32D4SDW-7 DMN32D4SDW-7 Diodes Incorporated DMN32D4SDW.pdf Description: MOSFET 2N-CH 30V 0.65A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 152468 Stücke:
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24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
DMP1046UFDB-7 DMP1046UFDB-7 Diodes Incorporated DMP1046UFDB.pdf Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 198721 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
DMP2060UFDB-7 DMP2060UFDB-7 Diodes Incorporated DMP2060UFDB.pdf Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 2075 Stücke:
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13+1.37 EUR
15+ 1.18 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
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DMP2200UDW-7 DMP2200UDW-7 Diodes Incorporated DMP2200UDW.pdf Description: MOSFET 2P-CH 20V 0.9A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 228166 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMP3068L-7 DMP3068L-7 Diodes Incorporated DMP3068L.pdf Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
auf Bestellung 159361 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMP4065S-7 DMP4065S-7 Diodes Incorporated DMP4065S.pdf Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
auf Bestellung 111886 Stücke:
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25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 25
DSS4160TQ-7 DSS4160TQ-7 Diodes Incorporated DSS4160T.pdf Description: TRANS NPN 60V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Qualification: AEC-Q101
auf Bestellung 8770 Stücke:
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25+0.7 EUR
35+ 0.51 EUR
100+ 0.25 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 25
FMMT720QTA FMMT720QTA Diodes Incorporated FMMT720.pdf Description: TRANS PNP 40V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 104726 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 21
S1MWF-7 S1MWF-7 Diodes Incorporated S1MWF.pdf Description: DIODE GEN PURP 1KV 1A SOD123F
Produkt ist nicht verfügbar
SDM2U20SD3-7 SDM2U20SD3-7 Diodes Incorporated SDM2U20SD3.pdf Description: DIODE SCHOTTKY 20V 2A SOD323
auf Bestellung 5854 Stücke:
Lieferzeit 10-14 Tag (e)
B240Q-13-F B240Q-13-F Diodes Incorporated B220_A-B260_A.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1766790 Stücke:
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30+0.6 EUR
39+ 0.46 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
B540CQ-13-F B540CQ-13-F Diodes Incorporated B520C-B560C.pdf Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 917441 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
24+ 0.76 EUR
100+ 0.53 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
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ZLPM8014JB20TC ZLPM8014JB20TC Diodes Incorporated ZLPM8014.pdf Description: IC LNB CTLR PWR SUPPLY 20UQFN
Packaging: Cut Tape (CT)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V ~ 16V
Applications: Set-Top Boxes
Current - Supply: 6mA
Supplier Device Package: U-QFN4040-20
Produkt ist nicht verfügbar
PDS5100HQ-13 PDS5100HQ-13 Diodes Incorporated ds30471.pdf Description: DIODE SCHOTTKY 100V 5A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1266485 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
10+ 1.77 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 0.95 EUR
2000+ 0.9 EUR
Mindestbestellmenge: 9
DMN10H170SFDE-7 DMN10H170SFDE-7 Diodes Incorporated DMN10H170SFDE.pdf Description: MOSFET N-CH 100V 2.9A 6UDFN
auf Bestellung 288015000 Stücke:
Lieferzeit 10-14 Tag (e)
DMC1028UFDB-13 DMC1028UFDB-13 Diodes Incorporated DMC1028UFDB.pdf Description: MOSFET N/P-CH 12V 6A/3.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.43 EUR
Mindestbestellmenge: 10000
DMC1029UFDB-13 DMC1029UFDB-13 Diodes Incorporated DMC1029UFDB.pdf Description: MOSFET N/P-CH 12V 6UDFN
Produkt ist nicht verfügbar
DMC2041UFDB-13 DMC2041UFDB-13 Diodes Incorporated DMC2041UFDB.pdf Description: MOSFET N/P-CH 20V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
DMC3400SDW-13 DMC3400SDW-13 Diodes Incorporated DMC3400SDW.pdf Description: MOSFET N/P-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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DMG3404L-13 DMG3404L-13 Diodes Incorporated DMG3404L.pdf Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
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DMG3406L-13 DMG3406L-13 Diodes Incorporated DMG3406L.pdf Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
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DMN1029UFDB-13 DMN1029UFDB-13 Diodes Incorporated DMN1029UFDB.pdf Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMN10H170SFDE-13 DMN10H170SFDE-13 Diodes Incorporated DMN10H170SFDE.pdf Description: MOSFET N-CH 100V 2.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Produkt ist nicht verfügbar
DMN10H170SVT-13 DMN10H170SVT-13 Diodes Incorporated DMN10H170SVT.pdf Description: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
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DMN2041UFDB-13 DMN2041UFDB-13 Diodes Incorporated DMN2041UFDB.pdf Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Produkt ist nicht verfügbar
DMN2046U-13 DMN2046U-13 Diodes Incorporated DMN2046U.pdf Description: MOSFET N-CH 20V 3.4A SOT23
Produkt ist nicht verfügbar
DMN32D4SDW-13 DMN32D4SDW-13 Diodes Incorporated DMN32D4SDW.pdf Description: MOSFET 2N-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
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50000+ 0.091 EUR
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DMP2060UFDB-13 DMP2060UFDB-13 Diodes Incorporated DMP2060UFDB.pdf Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Produkt ist nicht verfügbar
DMP2200UDW-13 DMP2200UDW-13 Diodes Incorporated DMP2200UDW.pdf Description: MOSFET 2P-CH 20V 0.9A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
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DMP3068L-13 DMP3068L-13 Diodes Incorporated DMP3068L.pdf Description: MOSFET P-CH 30V 3.9A SOT23
Produkt ist nicht verfügbar
DMN3016LSS-13 DMN3016LSS-13 Diodes Incorporated DMN3016LSS.pdf Description: MOSFET N-CH 30V 10.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
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AP3785HMTR-G1 AP3785HMTR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Power (Watts): 15 W
Produkt ist nicht verfügbar
B2100AF-13 B2100AF-13 Diodes Incorporated B2100AF.pdf Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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B360AM-13-F B360AM-13-F Diodes Incorporated B360AM.pdf Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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DDZ15Q-7 DDZ15Q-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 15V 310MW SOD123
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30000+ 0.067 EUR
Mindestbestellmenge: 3000
DDZ16Q-7 DDZ16Q-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 16V 310MW SOD123
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30000+ 0.067 EUR
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150000+ 0.054 EUR
Mindestbestellmenge: 3000
DDZ17Q-7 DDZ17Q-7 Diodes Incorporated ds30407.pdf Description: DIODE ZENER 17V 310MW SOD123
auf Bestellung 66000 Stücke:
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FMMT493QTA FMMT493QTA Diodes Incorporated FMMT493.pdf Description: TRANS NPN 100V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 606000 Stücke:
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Mindestbestellmenge: 3000
FMMT593QTA FMMT593QTA Diodes Incorporated FMMT593.pdf Description: TRANS PNP 100V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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Mindestbestellmenge: 3000
FZT493ATA FZT493ATA Diodes Incorporated FZT493A.pdf Description: TRANS NPN 100V 1A SOT223
Produkt ist nicht verfügbar
LMV393M8-13 LMV393M8-13 Diodes Incorporated LMV331_393.pdf Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
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PD3S160Q-7 PD3S160Q-7 Diodes Incorporated PD3S160Q.pdf Description: DIODE SCHOTTKY 60V 1A PWRDI323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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30000+ 0.21 EUR
Mindestbestellmenge: 3000
PDS360Q-13 PDS360Q-13 Diodes Incorporated PDS360Q.pdf Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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SBR3U60SA-13 SBR3U60SA-13 Diodes Incorporated SBR3U60SA.pdf Description: DIODE SBR 60V 3A SMA
Produkt ist nicht verfügbar
SBRT2U15LP-7 SBRT2U15LP-7 Diodes Incorporated SBRT2U15LP.pdf Description: DIODE SBR 15V 2A 3DFN
auf Bestellung 195000 Stücke:
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SBRT2U45LP-7 SBRT2U45LP-7 Diodes Incorporated SBRT2U45LP.pdf Description: DIODE SBR 45V 2A 3DFN
Produkt ist nicht verfügbar
SBRT4U45LP-7 SBRT4U45LP-7 Diodes Incorporated SBRT4U45LP.pdf Description: DIODE SBR 45V 4A 2DFN
auf Bestellung 3000 Stücke:
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ZXMP10A13FQTA ZXMP10A13FQTA Diodes Incorporated ZXMP10A13FQ.pdf Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.47 EUR
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Mindestbestellmenge: 3000
DMC1028UFDB-7 DMC1028UFDB.pdf
DMC1028UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6A/3.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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Anzahl Preis ohne MwSt
14+1.27 EUR
17+ 1.1 EUR
100+ 0.76 EUR
500+ 0.63 EUR
1000+ 0.54 EUR
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DMC1029UFDB-7 DMC1029UFDB.pdf
DMC1029UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6UDFN
auf Bestellung 18000 Stücke:
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DMC2041UFDB-7 DMC2041UFDB.pdf
DMC2041UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 20639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.18 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
DMC3400SDW-7 DMC3400SDW.pdf
DMC3400SDW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 7020542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMG3404L-7 DMG3404L.pdf
DMG3404L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
auf Bestellung 2134138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 25
DMG3406L-7 DMG3406L.pdf
DMG3406L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
auf Bestellung 104044 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMN1029UFDB-7 DMN1029UFDB.pdf
DMN1029UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 314398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
43+ 0.41 EUR
100+ 0.25 EUR
500+ 0.23 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 34
DMN10H170SFDE-7 DMN10H170SFDE.pdf
DMN10H170SFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A 6UDFN
auf Bestellung 288015000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN10H170SVT-7 DMN10H170SVT.pdf
DMN10H170SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Produkt ist nicht verfügbar
DMN2041UFDB-7 DMN2041UFDB.pdf
DMN2041UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Produkt ist nicht verfügbar
DMN2046U-7 DMN2046U.pdf
DMN2046U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
auf Bestellung 263839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
58+ 0.3 EUR
115+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 42
DMN3042L-7 DMN3042L.pdf
DMN3042L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 884961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 25
DMN32D4SDW-7 DMN32D4SDW.pdf
DMN32D4SDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 152468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
DMP1046UFDB-7 DMP1046UFDB.pdf
DMP1046UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 198721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
DMP2060UFDB-7 DMP2060UFDB.pdf
DMP2060UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 2075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.18 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
DMP2200UDW-7 DMP2200UDW.pdf
DMP2200UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 228166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMP3068L-7 DMP3068L.pdf
DMP3068L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
auf Bestellung 159361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMP4065S-7 DMP4065S.pdf
DMP4065S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
auf Bestellung 111886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 25
DSS4160TQ-7 DSS4160T.pdf
DSS4160TQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Qualification: AEC-Q101
auf Bestellung 8770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
35+ 0.51 EUR
100+ 0.25 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 25
FMMT720QTA FMMT720.pdf
FMMT720QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 104726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 21
S1MWF-7 S1MWF.pdf
S1MWF-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Produkt ist nicht verfügbar
SDM2U20SD3-7 SDM2U20SD3.pdf
SDM2U20SD3-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 2A SOD323
auf Bestellung 5854 Stücke:
Lieferzeit 10-14 Tag (e)
B240Q-13-F B220_A-B260_A.pdf
B240Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1766790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
39+ 0.46 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
B540CQ-13-F B520C-B560C.pdf
B540CQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 917441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.76 EUR
100+ 0.53 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 20
ZLPM8014JB20TC ZLPM8014.pdf
ZLPM8014JB20TC
Hersteller: Diodes Incorporated
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Packaging: Cut Tape (CT)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V ~ 16V
Applications: Set-Top Boxes
Current - Supply: 6mA
Supplier Device Package: U-QFN4040-20
Produkt ist nicht verfügbar
PDS5100HQ-13 ds30471.pdf
PDS5100HQ-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1266485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.16 EUR
10+ 1.77 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 0.95 EUR
2000+ 0.9 EUR
Mindestbestellmenge: 9
DMN10H170SFDE-7 DMN10H170SFDE.pdf
DMN10H170SFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A 6UDFN
auf Bestellung 288015000 Stücke:
Lieferzeit 10-14 Tag (e)
DMC1028UFDB-13 DMC1028UFDB.pdf
DMC1028UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6A/3.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.43 EUR
Mindestbestellmenge: 10000
DMC1029UFDB-13 DMC1029UFDB.pdf
DMC1029UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6UDFN
Produkt ist nicht verfügbar
DMC2041UFDB-13 DMC2041UFDB.pdf
DMC2041UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
DMC3400SDW-13 DMC3400SDW.pdf
DMC3400SDW-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 350000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.1 EUR
30000+ 0.099 EUR
50000+ 0.082 EUR
Mindestbestellmenge: 10000
DMG3404L-13 DMG3404L.pdf
DMG3404L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.14 EUR
Mindestbestellmenge: 10000
DMG3406L-13 DMG3406L.pdf
DMG3406L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.1 EUR
30000+ 0.098 EUR
50000+ 0.081 EUR
Mindestbestellmenge: 10000
DMN1029UFDB-13 DMN1029UFDB.pdf
DMN1029UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.17 EUR
Mindestbestellmenge: 10000
DMN10H170SFDE-13 DMN10H170SFDE.pdf
DMN10H170SFDE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Produkt ist nicht verfügbar
DMN10H170SVT-13 DMN10H170SVT.pdf
DMN10H170SVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.25 EUR
Mindestbestellmenge: 10000
DMN2041UFDB-13 DMN2041UFDB.pdf
DMN2041UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Produkt ist nicht verfügbar
DMN2046U-13 DMN2046U.pdf
DMN2046U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Produkt ist nicht verfügbar
DMN32D4SDW-13 DMN32D4SDW.pdf
DMN32D4SDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.11 EUR
50000+ 0.091 EUR
Mindestbestellmenge: 10000
DMP2060UFDB-13 DMP2060UFDB.pdf
DMP2060UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Produkt ist nicht verfügbar
DMP2200UDW-13 DMP2200UDW.pdf
DMP2200UDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.1 EUR
30000+ 0.099 EUR
50000+ 0.082 EUR
Mindestbestellmenge: 10000
DMP3068L-13 DMP3068L.pdf
DMP3068L-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.9A SOT23
Produkt ist nicht verfügbar
DMN3016LSS-13 DMN3016LSS.pdf
DMN3016LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 102500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.29 EUR
5000+ 0.27 EUR
12500+ 0.25 EUR
62500+ 0.24 EUR
Mindestbestellmenge: 2500
AP3785HMTR-G1
AP3785HMTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Power (Watts): 15 W
Produkt ist nicht verfügbar
B2100AF-13 B2100AF.pdf
B2100AF-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1010000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.18 EUR
50000+ 0.17 EUR
Mindestbestellmenge: 10000
B360AM-13-F B360AM.pdf
B360AM-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 389000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.26 EUR
10000+ 0.24 EUR
25000+ 0.23 EUR
Mindestbestellmenge: 5000
DDZ15Q-7 DDZ5V1B-DDZ43.pdf
DDZ15Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 310MW SOD123
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.096 EUR
6000+ 0.084 EUR
15000+ 0.071 EUR
30000+ 0.067 EUR
Mindestbestellmenge: 3000
DDZ16Q-7 DDZ5V1B-DDZ43.pdf
DDZ16Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 310MW SOD123
auf Bestellung 648000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.096 EUR
6000+ 0.084 EUR
15000+ 0.071 EUR
30000+ 0.067 EUR
75000+ 0.063 EUR
150000+ 0.054 EUR
Mindestbestellmenge: 3000
DDZ17Q-7 ds30407.pdf
DDZ17Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
FMMT493QTA FMMT493.pdf
FMMT493QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 606000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
75000+ 0.18 EUR
Mindestbestellmenge: 3000
FMMT593QTA FMMT593.pdf
FMMT593QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 156000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.26 EUR
6000+ 0.25 EUR
9000+ 0.23 EUR
75000+ 0.22 EUR
Mindestbestellmenge: 3000
FZT493ATA FZT493A.pdf
FZT493ATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT223
Produkt ist nicht verfügbar
LMV393M8-13 LMV331_393.pdf
LMV393M8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
auf Bestellung 1685000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.24 EUR
5000+ 0.22 EUR
12500+ 0.21 EUR
25000+ 0.2 EUR
62500+ 0.19 EUR
Mindestbestellmenge: 2500
PD3S160Q-7 PD3S160Q.pdf
PD3S160Q-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 1A PWRDI323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 171000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.23 EUR
9000+ 0.22 EUR
30000+ 0.21 EUR
Mindestbestellmenge: 3000
PDS360Q-13 PDS360Q.pdf
PDS360Q-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.38 EUR
10000+ 0.35 EUR
Mindestbestellmenge: 5000
SBR3U60SA-13 SBR3U60SA.pdf
SBR3U60SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Produkt ist nicht verfügbar
SBRT2U15LP-7 SBRT2U15LP.pdf
SBRT2U15LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 15V 2A 3DFN
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
SBRT2U45LP-7 SBRT2U45LP.pdf
SBRT2U45LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 2A 3DFN
Produkt ist nicht verfügbar
SBRT4U45LP-7 SBRT4U45LP.pdf
SBRT4U45LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 4A 2DFN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
ZXMP10A13FQTA ZXMP10A13FQ.pdf
ZXMP10A13FQTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.47 EUR
6000+ 0.44 EUR
9000+ 0.41 EUR
Mindestbestellmenge: 3000
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