Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1204 nach 1259
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BZX84C10T-7-F | DIODES INCORPORATED |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 10V; SMD; reel,tape; SOT523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT523 Semiconductor structure: single diode |
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BZX84C10W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ7.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.78...8.95V Max. forward impulse current: 50A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.4mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2735 Stücke: Lieferzeit 14-21 Tag (e) |
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DMMT5401-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.2A Power dissipation: 0.3W Case: SOT26 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz |
auf Bestellung 4415 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2110A | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.32A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.32A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
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FZT789ATA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 3A Power dissipation: 1.2W Case: SOT223 Current gain: 300...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 505 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ8.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 8.89÷9.83V; 29.4A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 400W Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 29.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ8.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 400W Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 29.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 100µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3570 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ9.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 10÷11.1V; 26A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3625 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ9.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 10÷11.1V; 26A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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ZXTP25020CFFTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 4.5A; 1.96W; SOT23F Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4.5A Power dissipation: 1.96W Case: SOT23F Current gain: 40...500 Mounting: SMD Kind of package: reel; tape Frequency: 285MHz |
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ZXTP25020DFLTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 290MHz |
auf Bestellung 2022 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTP25020DZTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 5A; 15.7W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 5A Power dissipation: 15.7W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 290MHz |
Produkt ist nicht verfügbar |
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SMBJ7.5CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2135 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2114HA-1.2TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
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SMBJ13CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 27.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2468 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ75CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| PDS1040CTL-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 5Ax2; PowerDI®5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 40V Case: PowerDI®5 Kind of package: reel; tape Leakage current: 25mA Max. forward impulse current: 110A |
Produkt ist nicht verfügbar |
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ZRC400F01TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 4.096V; ±1%; SOT23; reel,tape; 5mA Type of integrated circuit: voltage reference source Reference voltage: 4.096V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 5mA |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT1053ATA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 75V; 4.5A; 1.2W; SOT223 Mounting: SMD Kind of package: reel; tape Case: SOT223 Power dissipation: 1.2W Polarisation: bipolar Frequency: 140MHz Collector-emitter voltage: 75V Current gain: 300...1200 Collector current: 4.5A Type of transistor: NPN |
auf Bestellung 1321 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZXT1053AKTC | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 75V; 5A; 2.1W; TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 75V Collector current: 5A Power dissipation: 2.1W Case: TO252 Current gain: 300...1200 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
Produkt ist nicht verfügbar |
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BS107P | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.12A Power dissipation: 0.5W Case: TO92 Gate-source voltage: ±20V On-state resistance: 23Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
auf Bestellung 3275 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C6V2TQ-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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MMSZ5228B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.37/0.5W; 3.9V; SMD; reel,tape; SOD123; single diode Power dissipation: 0.37/0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 3.9V |
auf Bestellung 3060 Stücke: Lieferzeit 14-21 Tag (e) |
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APX823-40W5G-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; Active logical level: low Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT25 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 4V Kind of package: reel; tape Delay time: 200ms Integrated circuit features: manual reset; watchdog |
Produkt ist nicht verfügbar |
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| DMP6050SFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W Mounting: SMD Case: PowerDI®3333-8 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -32A Drain-source voltage: -60V Drain current: -3.9A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| DMP6050SPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -45A Drain-source voltage: -60V Drain current: -4.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.9A Pulsed drain current: -32A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 518 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG7408SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W Drain-source voltage: 30V Drain current: 7.5A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Mounting: SMD Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |
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| 74LVC2G125HD4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN2010-8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVC Kind of input: with Schmitt trigger |
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| 74LVC2G125RA3-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN1210-8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVC Kind of input: with Schmitt trigger |
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| 74AUP1G125FS3-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN0808-4 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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| 74AUP1G125FW5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X1-DFN1010-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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| 74AUP1G125FX4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1409-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger |
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AP7335-10WG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.3A; SOT25; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7335 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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ZXMN6A11DN8TA | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4006-T | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Capacitance: 8pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Quantity in set/package: 5000pcs. |
auf Bestellung 3995 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4006G-T | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 8pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Reverse recovery time: 2µs Quantity in set/package: 5000pcs. |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
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B130LAW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape; 450mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Capacitance: 40pF Case: SOD123 Kind of package: reel; tape Max. forward impulse current: 12A Power dissipation: 0.45W |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ14A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 15.6÷17.2V; 17.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 7110 Stücke: Lieferzeit 14-21 Tag (e) |
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| SBR8U60P5-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.46V Case: PowerDI®5 Kind of package: reel; tape Leakage current: 120µA Max. forward impulse current: 280A |
Produkt ist nicht verfügbar |
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DMP3004SSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8 Mounting: SMD Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 156nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -110A Case: SO8 Drain-source voltage: -30V Drain current: -18.7A On-state resistance: 6.5mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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74HCT126S14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
auf Bestellung 1225 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2040UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 1.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| DMP2040UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 0.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DDTC115GUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; 100kΩ Case: SOT323 Mounting: SMD Frequency: 250MHz Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base-emitter resistor: 100kΩ Collector-emitter voltage: 50V Current gain: 82 Collector current: 0.1A Type of transistor: NPN |
Produkt ist nicht verfügbar |
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GBU408 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| AP2114D-3.3TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252; SMD; Ch: 1 Output current: 1A Output voltage: 3.3V Operating temperature: -40...85°C Number of channels: 1 Input voltage: 2.5...6V Type of integrated circuit: voltage regulator Integrated circuit features: shutdown mode control input Kind of package: reel; tape Voltage drop: 0.75V Tolerance: ±1.5% Kind of voltage regulator: fixed; LDO; linear Case: TO252 Mounting: SMD |
Produkt ist nicht verfügbar |
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| AP2114DA-3.3TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 3.3V Output current: 1A Case: TO252 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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MBRB1545CT-T | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15A; 30ns; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Capacitance: 250pF Max. forward voltage: 0.7V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 150A |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC6040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 5.1/-3.9A Power dissipation: 1.56W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.04/0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2292 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC6040SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 5.6/-3.6A Power dissipation: 1.24W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.055/0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| AZ1117ID-1.2TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 1.2V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V Manufacturer series: AZ1117I |
Produkt ist nicht verfügbar |
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D1213A-01WS-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 5A; 0.25W; SOD323; Features: ESD protection Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 5A Peak pulse power dissipation: 0.25W Mounting: SMD Case: SOD323 Max. off-state voltage: 3.3V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape Capacitance: 0.85pF Application: Ethernet; USB |
Produkt ist nicht verfügbar |
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D1213A-02SR-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 5A; 0.4W; SOT143; Features: ESD protection Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 5A Peak pulse power dissipation: 0.4W Mounting: SMD Case: SOT143 Max. off-state voltage: 3.3V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 2 Kind of package: reel; tape Capacitance: 0.85pF |
auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
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D1213A-04TS-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 5A; TSOT26; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 5A Mounting: SMD Case: TSOT26 Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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D1213A-02SOL-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 5A; 0.3W; SOT23; Features: ESD protection Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 5A Peak pulse power dissipation: 0.3W Mounting: SMD Case: SOT23 Max. off-state voltage: 3.3V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 2 Kind of package: reel; tape Capacitance: 0.85pF Application: Ethernet; USB |
auf Bestellung 3140 Stücke: Lieferzeit 14-21 Tag (e) |
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| D12V0H1U2LP-7B | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 13.3÷15.75V; 13A; unidirectional; X1-DFN1006-2 Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.75V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: X1-DFN1006-2 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
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| D12V0HA1U2LP-7B | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 500W; 13.5÷16.5V; 25A; unidirectional; X1-DFN1006-2 Max. off-state voltage: 12V Semiconductor structure: unidirectional Max. forward impulse current: 25A Breakdown voltage: 13.5...16.5V Leakage current: 0.1µA Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.5kW Mounting: SMD Case: X1-DFN1006-2 |
Produkt ist nicht verfügbar |
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| SDT10A45P5-13D | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; PowerDI®5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: PowerDI®5 Kind of package: reel; tape Leakage current: 80mA Max. forward impulse current: 180A |
Produkt ist nicht verfügbar |
| BZX84C10T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 10V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 10V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| BZX84C10W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 580+ | 0.12 EUR |
| 1330+ | 0.054 EUR |
| 1700+ | 0.042 EUR |
| 1800+ | 0.04 EUR |
| SMBJ7.0CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 228+ | 0.31 EUR |
| 304+ | 0.24 EUR |
| 472+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| 532+ | 0.13 EUR |
| DMMT5401-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
auf Bestellung 4415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 216+ | 0.33 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| 400+ | 0.18 EUR |
| 574+ | 0.12 EUR |
| ZVN2110A |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.32A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.32A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.32A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.32A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FZT789ATA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 163+ | 0.44 EUR |
| 172+ | 0.42 EUR |
| SMAJ8.0A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 8.89÷9.83V; 29.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 400W
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 8.89÷9.83V; 29.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 400W
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMAJ8.0CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 400W
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 100µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 400W
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 100µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3570 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 645+ | 0.11 EUR |
| 730+ | 0.098 EUR |
| 885+ | 0.081 EUR |
| 935+ | 0.077 EUR |
| SMAJ9.0A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 10÷11.1V; 26A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 10÷11.1V; 26A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3625 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 660+ | 0.11 EUR |
| 735+ | 0.098 EUR |
| 850+ | 0.084 EUR |
| 900+ | 0.08 EUR |
| SMAJ9.0CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| ZXTP25020CFFTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4.5A; 1.96W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.96W
Case: SOT23F
Current gain: 40...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 285MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4.5A; 1.96W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.96W
Case: SOT23F
Current gain: 40...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 285MHz
Produkt ist nicht verfügbar
| ZXTP25020DFLTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 290MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 290MHz
auf Bestellung 2022 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 253+ | 0.28 EUR |
| 317+ | 0.23 EUR |
| 336+ | 0.21 EUR |
| ZXTP25020DZTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 15.7W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 5A
Power dissipation: 15.7W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 290MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 15.7W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 5A
Power dissipation: 15.7W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 290MHz
Produkt ist nicht verfügbar
| SMBJ7.5CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2135 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 368+ | 0.19 EUR |
| 506+ | 0.14 EUR |
| 532+ | 0.13 EUR |
| AP2114HA-1.2TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| SMBJ13CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2468 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 440+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 570+ | 0.13 EUR |
| 605+ | 0.12 EUR |
| SMCJ75CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| PDS1040CTL-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5Ax2; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 25mA
Max. forward impulse current: 110A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5Ax2; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 25mA
Max. forward impulse current: 110A
Produkt ist nicht verfügbar
| ZRC400F01TA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 4.096V; ±1%; SOT23; reel,tape; 5mA
Type of integrated circuit: voltage reference source
Reference voltage: 4.096V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 5mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 4.096V; ±1%; SOT23; reel,tape; 5mA
Type of integrated circuit: voltage reference source
Reference voltage: 4.096V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 5mA
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 1.03 EUR |
| 78+ | 0.92 EUR |
| 102+ | 0.71 EUR |
| 107+ | 0.67 EUR |
| FZT1053ATA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 4.5A; 1.2W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Power dissipation: 1.2W
Polarisation: bipolar
Frequency: 140MHz
Collector-emitter voltage: 75V
Current gain: 300...1200
Collector current: 4.5A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 4.5A; 1.2W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Power dissipation: 1.2W
Polarisation: bipolar
Frequency: 140MHz
Collector-emitter voltage: 75V
Current gain: 300...1200
Collector current: 4.5A
Type of transistor: NPN
auf Bestellung 1321 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 73+ | 0.99 EUR |
| 112+ | 0.64 EUR |
| 126+ | 0.57 EUR |
| 141+ | 0.51 EUR |
| 146+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| ZXT1053AKTC |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.1W
Case: TO252
Current gain: 300...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.1W
Case: TO252
Current gain: 300...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
| BS107P |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 3275 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 98+ | 0.74 EUR |
| 122+ | 0.59 EUR |
| 132+ | 0.55 EUR |
| 139+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| BZT52C6V2TQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
| MMSZ5228B-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Power dissipation: 0.37/0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Power dissipation: 0.37/0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.9V
auf Bestellung 3060 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1180+ | 0.061 EUR |
| 2320+ | 0.031 EUR |
| 2640+ | 0.027 EUR |
| 3040+ | 0.024 EUR |
| 3060+ | 0.023 EUR |
| APX823-40W5G-7 |
|
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
| DMP6050SFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP6050SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Drain-source voltage: -60V
Drain current: -4.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Drain-source voltage: -60V
Drain current: -4.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP6050SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.9A
Pulsed drain current: -32A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.9A
Pulsed drain current: -32A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 518 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 121+ | 0.59 EUR |
| 137+ | 0.52 EUR |
| 158+ | 0.45 EUR |
| 167+ | 0.43 EUR |
| DMG7408SFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Mounting: SMD
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
| 74LVC2G125HD4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74LVC2G125RA3-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1210-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1210-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74AUP1G125FS3-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74AUP1G125FW5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74AUP1G125FX4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| AP7335-10WG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.3A; SOT25; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7335
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.3A; SOT25; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7335
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| ZXMN6A11DN8TA |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 131+ | 0.55 EUR |
| 148+ | 0.48 EUR |
| 174+ | 0.41 EUR |
| 184+ | 0.39 EUR |
| 1N4006-T |
|
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 8pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 8pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Quantity in set/package: 5000pcs.
auf Bestellung 3995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 218+ | 0.33 EUR |
| 298+ | 0.24 EUR |
| 470+ | 0.15 EUR |
| 731+ | 0.098 EUR |
| 1029+ | 0.069 EUR |
| 2273+ | 0.031 EUR |
| 2404+ | 0.03 EUR |
| 1N4006G-T |
|
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 2µs
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 2µs
Quantity in set/package: 5000pcs.
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| B130LAW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape; 450mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 12A
Power dissipation: 0.45W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123; reel,tape; 450mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 12A
Power dissipation: 0.45W
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| SMAJ14A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 15.6÷17.2V; 17.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 15.6÷17.2V; 17.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 7110 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 275+ | 0.26 EUR |
| 570+ | 0.13 EUR |
| 630+ | 0.11 EUR |
| 870+ | 0.083 EUR |
| 920+ | 0.078 EUR |
| SBR8U60P5-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 280A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 280A
Produkt ist nicht verfügbar
| DMP3004SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 156nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -110A
Case: SO8
Drain-source voltage: -30V
Drain current: -18.7A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 156nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -110A
Case: SO8
Drain-source voltage: -30V
Drain current: -18.7A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| 74HCT126S14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 1225 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 428+ | 0.17 EUR |
| 468+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| 582+ | 0.12 EUR |
| DMP2040UFDF-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 1.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 1.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP2040UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 0.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 0.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Produkt ist nicht verfügbar
| DDTC115GUA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; 100kΩ
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base-emitter resistor: 100kΩ
Collector-emitter voltage: 50V
Current gain: 82
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; 100kΩ
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base-emitter resistor: 100kΩ
Collector-emitter voltage: 50V
Current gain: 82
Collector current: 0.1A
Type of transistor: NPN
Produkt ist nicht verfügbar
| GBU408 |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| AP2114D-3.3TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252; SMD; Ch: 1
Output current: 1A
Output voltage: 3.3V
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.5...6V
Type of integrated circuit: voltage regulator
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Voltage drop: 0.75V
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Case: TO252
Mounting: SMD
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252; SMD; Ch: 1
Output current: 1A
Output voltage: 3.3V
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.5...6V
Type of integrated circuit: voltage regulator
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Voltage drop: 0.75V
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Case: TO252
Mounting: SMD
Produkt ist nicht verfügbar
| AP2114DA-3.3TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| MBRB1545CT-T |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; 30ns; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Capacitance: 250pF
Max. forward voltage: 0.7V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; 30ns; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Capacitance: 250pF
Max. forward voltage: 0.7V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 150A
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.75 EUR |
| DMC6040SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.04/0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.04/0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2292 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 91+ | 0.79 EUR |
| 202+ | 0.35 EUR |
| 213+ | 0.34 EUR |
| DMC6040SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.6/-3.6A
Power dissipation: 1.24W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.6/-3.6A
Power dissipation: 1.24W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| AZ1117ID-1.2TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Manufacturer series: AZ1117I
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.2V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Manufacturer series: AZ1117I
Produkt ist nicht verfügbar
| D1213A-01WS-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; SOD323; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.25W
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; SOD323; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.25W
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Produkt ist nicht verfügbar
| D1213A-02SR-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; SOT143; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.4W
Mounting: SMD
Case: SOT143
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; SOT143; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.4W
Mounting: SMD
Case: SOT143
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
auf Bestellung 2590 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 320+ | 0.23 EUR |
| 485+ | 0.15 EUR |
| 545+ | 0.13 EUR |
| 635+ | 0.11 EUR |
| D1213A-04TS-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Mounting: SMD
Case: TSOT26
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Mounting: SMD
Case: TSOT26
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
| D1213A-02SOL-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.3W; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.3W; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
auf Bestellung 3140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 550+ | 0.13 EUR |
| 610+ | 0.12 EUR |
| 800+ | 0.09 EUR |
| 850+ | 0.084 EUR |
| D12V0H1U2LP-7B |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷15.75V; 13A; unidirectional; X1-DFN1006-2
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.75V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: X1-DFN1006-2
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷15.75V; 13A; unidirectional; X1-DFN1006-2
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.75V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: X1-DFN1006-2
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
| D12V0HA1U2LP-7B |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 500W; 13.5÷16.5V; 25A; unidirectional; X1-DFN1006-2
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Max. forward impulse current: 25A
Breakdown voltage: 13.5...16.5V
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: X1-DFN1006-2
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 500W; 13.5÷16.5V; 25A; unidirectional; X1-DFN1006-2
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Max. forward impulse current: 25A
Breakdown voltage: 13.5...16.5V
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: X1-DFN1006-2
Produkt ist nicht verfügbar
| SDT10A45P5-13D |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 80mA
Max. forward impulse current: 180A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 80mA
Max. forward impulse current: 180A
Produkt ist nicht verfügbar