Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIA108DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 30A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA110DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 20A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA112LDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.8A Pulsed drain current: 10A Power dissipation: 15.6W Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 11.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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SIA400EDJ-T1-GE3 | VISHAY | SIA400EDJ-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIA413ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Mounting: SMD Kind of package: reel; tape Gate charge: 57nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Drain-source voltage: -12V Drain current: -12A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 19W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA413DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -12A Pulsed drain current: -40A Power dissipation: 19W Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIA414DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 40A Power dissipation: 19W Drain-source voltage: 8V Drain current: 12A On-state resistance: 41mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA416DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.3A Pulsed drain current: 15A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 83mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA421DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -35A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA4263DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -12A On-state resistance: 51.1mΩ Type of transistor: P-MOSFET Power dissipation: 15.6W Polarisation: unipolar Gate charge: 52.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -32A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA4265EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -20A Power dissipation: 15.6W Gate-source voltage: ±8V On-state resistance: 67.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA427ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W Mounting: SMD Case: PowerPAK® SC70 Kind of package: reel; tape Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -50A Power dissipation: 12W Drain-source voltage: -8V Drain current: -12A On-state resistance: 16mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA429DJT-T1-GE3 | VISHAY | SIA429DJT-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA430DJT-T1-GE3 | VISHAY | SIA430DJT-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIA431DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W Case: PowerPAK® SC70 Mounting: SMD Kind of package: reel; tape Drain current: -12A Drain-source voltage: -20V Power dissipation: 12W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -30A On-state resistance: 25mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA432DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 30A Power dissipation: 19.2W Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA433EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA436DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 25.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 50A Power dissipation: 19W Drain-source voltage: 8V Drain current: 12A On-state resistance: 36mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA437DJ-T1-GE3 | VISHAY | SIA437DJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA440DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIA441DJ-T1-GE3 | VISHAY | SIA441DJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA445EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SiA445EDJT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA446DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 7.7A Pulsed drain current: 10A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 177mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIA447DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12A Pulsed drain current: -50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIA449DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -30A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIA456DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 2A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±16V On-state resistance: 1.38Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA459EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -40A Power dissipation: 10W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA461DJ-T1-GE3 | VISHAY | SIA461DJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA462DJ-T1-GE3 | VISHAY | SIA462DJ-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIA466EDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 25A Pulsed drain current: 50A Power dissipation: 19.2W Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA468DJ-T1-GE3 | VISHAY | SIA468DJ-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SiA469DJ-T1-GE3 | VISHAY | SIA469DJ-T1-GE3 SMD P channel transistors |
auf Bestellung 2963 Stücke: Lieferzeit 7-14 Tag (e) |
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SIA471DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -30.3A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -30.3A Pulsed drain current: -70A Power dissipation: 19.2W On-state resistance: 24.1mΩ Mounting: SMD Gate charge: 27.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIA472EDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A Power dissipation: 19.2W Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 12A On-state resistance: 26.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 36nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA477EDJ-T1-GE3 | VISHAY | SIA477EDJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA477EDJT-T1-GE3 | VISHAY | SIA477EDJT-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA483ADJ-T1-GE3 | VISHAY | SIA483ADJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA483DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W Mounting: SMD Case: PowerPAK® SC70 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Drain-source voltage: -30V Drain current: -12A On-state resistance: 21mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2949 Stücke: Lieferzeit 7-14 Tag (e) |
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SIA485DJ-T1-GE3 | VISHAY | SIA485DJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA517DJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 12/-12V Drain current: 4.5/-4.5A Power dissipation: 6.5W Gate-source voltage: ±8V On-state resistance: 170/65mΩ Mounting: SMD Gate charge: 20/15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIA519EDJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.5/-4.5A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.5/-4.5A Power dissipation: 7.8W Gate-source voltage: ±12V On-state resistance: 137/65mΩ Mounting: SMD Gate charge: 16/12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA527DJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA533EDJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A Kind of package: reel; tape Type of transistor: N/P-MOSFET Power dissipation: 7.8W Polarisation: unipolar Gate charge: 20/15nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Drain-source voltage: 12/-12V Drain current: 4.5/-4.5A On-state resistance: 215/70mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA537EDJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-20V; 4.5/-4.5A Kind of package: reel; tape Type of transistor: N/P-MOSFET Power dissipation: 7.8W Polarisation: unipolar Gate charge: 25/16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Drain-source voltage: 12/-20V Drain current: 4.5/-4.5A On-state resistance: 165/104mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA811ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -8A Power dissipation: 6.8W Gate-source voltage: ±8V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA817EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 6.5W Gate-source voltage: ±12V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA906EDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 15A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 15A Power dissipation: 7.8W Gate-source voltage: ±12V On-state resistance: 63mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA910EDJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 4.5A; Idm: 20A Polarisation: unipolar Kind of package: reel; tape Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD Drain-source voltage: 12V Drain current: 4.5A On-state resistance: 42mΩ Type of transistor: N-MOSFET x2 Power dissipation: 7.8W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA913ADJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -4.5A; 6.5W Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 6.5W Gate-source voltage: ±8V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SiA918EDJ-T1-GE3 | VISHAY | SIA918EDJ-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIA921EDJ-T1-GE3 | VISHAY | SIA921EDJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA923AEDJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W Mounting: SMD Polarisation: unipolar Power dissipation: 7.8W Kind of package: reel; tape Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -4.5A On-state resistance: 0.165Ω Type of transistor: P-MOSFET x2 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA923EDJ-T1-GE3 | VISHAY | SIA923EDJ-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SiA928DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 7.8W On-state resistance: 33mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA929DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 5W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIA931DJ-T1-GE3 | VISHAY | SIA931DJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIA938DJT-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 7.8W On-state resistance: 48mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA975DJ-T1-GE3 | VISHAY | SIA975DJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIAA00DJ-T1-GE3 | VISHAY | SIAA00DJ-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
SIA108DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA110DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 20A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 20A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA112LDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.8A
Pulsed drain current: 10A
Power dissipation: 15.6W
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.8A
Pulsed drain current: 10A
Power dissipation: 15.6W
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
SIA400EDJ-T1-GE3 |
Hersteller: VISHAY
SIA400EDJ-T1-GE3 SMD N channel transistors
SIA400EDJ-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIA413ADJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 57nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 57nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA413DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 19W
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 19W
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIA414DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA416DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA421DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA4263DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -12A
On-state resistance: 51.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 15.6W
Polarisation: unipolar
Gate charge: 52.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -32A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -12A
On-state resistance: 51.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 15.6W
Polarisation: unipolar
Gate charge: 52.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -32A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA4265EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA427ADJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -50A
Power dissipation: 12W
Drain-source voltage: -8V
Drain current: -12A
On-state resistance: 16mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -50A
Power dissipation: 12W
Drain-source voltage: -8V
Drain current: -12A
On-state resistance: 16mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA429DJT-T1-GE3 |
Hersteller: VISHAY
SIA429DJT-T1-GE3 SMD P channel transistors
SIA429DJT-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA430DJT-T1-GE3 |
Hersteller: VISHAY
SIA430DJT-T1-GE3 SMD N channel transistors
SIA430DJT-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIA431DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Case: PowerPAK® SC70
Mounting: SMD
Kind of package: reel; tape
Drain current: -12A
Drain-source voltage: -20V
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -30A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Case: PowerPAK® SC70
Mounting: SMD
Kind of package: reel; tape
Drain current: -12A
Drain-source voltage: -20V
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -30A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA432DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA433EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA436DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 50A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 50A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA437DJ-T1-GE3 |
Hersteller: VISHAY
SIA437DJ-T1-GE3 SMD P channel transistors
SIA437DJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA440DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIA441DJ-T1-GE3 |
Hersteller: VISHAY
SIA441DJ-T1-GE3 SMD P channel transistors
SIA441DJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA445EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SiA445EDJT-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA446DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 177mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 177mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIA447DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIA449DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIA456DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA459EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA461DJ-T1-GE3 |
Hersteller: VISHAY
SIA461DJ-T1-GE3 SMD P channel transistors
SIA461DJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA462DJ-T1-GE3 |
Hersteller: VISHAY
SIA462DJ-T1-GE3 SMD N channel transistors
SIA462DJ-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIA466EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA468DJ-T1-GE3 |
Hersteller: VISHAY
SIA468DJ-T1-GE3 SMD N channel transistors
SIA468DJ-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SiA469DJ-T1-GE3 |
Hersteller: VISHAY
SIA469DJ-T1-GE3 SMD P channel transistors
SIA469DJ-T1-GE3 SMD P channel transistors
auf Bestellung 2963 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
196+ | 0.37 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
SIA471DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -30.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30.3A
Pulsed drain current: -70A
Power dissipation: 19.2W
On-state resistance: 24.1mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -30.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30.3A
Pulsed drain current: -70A
Power dissipation: 19.2W
On-state resistance: 24.1mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIA472EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Power dissipation: 19.2W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 26.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Power dissipation: 19.2W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 26.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA477EDJ-T1-GE3 |
Hersteller: VISHAY
SIA477EDJ-T1-GE3 SMD P channel transistors
SIA477EDJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA477EDJT-T1-GE3 |
Hersteller: VISHAY
SIA477EDJT-T1-GE3 SMD P channel transistors
SIA477EDJT-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA483ADJ-T1-GE3 |
Hersteller: VISHAY
SIA483ADJ-T1-GE3 SMD P channel transistors
SIA483ADJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA483DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -12A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -12A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2949 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
184+ | 0.39 EUR |
205+ | 0.35 EUR |
268+ | 0.27 EUR |
283+ | 0.25 EUR |
SIA485DJ-T1-GE3 |
Hersteller: VISHAY
SIA485DJ-T1-GE3 SMD P channel transistors
SIA485DJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA517DJ-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIA519EDJ-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.5/-4.5A
Power dissipation: 7.8W
Gate-source voltage: ±12V
On-state resistance: 137/65mΩ
Mounting: SMD
Gate charge: 16/12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.5/-4.5A
Power dissipation: 7.8W
Gate-source voltage: ±12V
On-state resistance: 137/65mΩ
Mounting: SMD
Gate charge: 16/12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA527DJ-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA533EDJ-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Kind of package: reel; tape
Type of transistor: N/P-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Gate charge: 20/15nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
On-state resistance: 215/70mΩ
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Kind of package: reel; tape
Type of transistor: N/P-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Gate charge: 20/15nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
On-state resistance: 215/70mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA537EDJ-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-20V; 4.5/-4.5A
Kind of package: reel; tape
Type of transistor: N/P-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Gate charge: 25/16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 12/-20V
Drain current: 4.5/-4.5A
On-state resistance: 165/104mΩ
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-20V; 4.5/-4.5A
Kind of package: reel; tape
Type of transistor: N/P-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Gate charge: 25/16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 12/-20V
Drain current: 4.5/-4.5A
On-state resistance: 165/104mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA811ADJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -8A
Power dissipation: 6.8W
Gate-source voltage: ±8V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -8A
Power dissipation: 6.8W
Gate-source voltage: ±8V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA817EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 6.5W
Gate-source voltage: ±12V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 6.5W
Gate-source voltage: ±12V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA906EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 15A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 15A
Power dissipation: 7.8W
Gate-source voltage: ±12V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 15A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 15A
Power dissipation: 7.8W
Gate-source voltage: ±12V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA910EDJ-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 4.5A; Idm: 20A
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Drain-source voltage: 12V
Drain current: 4.5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 7.8W
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 4.5A; Idm: 20A
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Drain-source voltage: 12V
Drain current: 4.5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 7.8W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA913ADJ-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -4.5A; 6.5W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 6.5W
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -4.5A; 6.5W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 6.5W
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SiA918EDJ-T1-GE3 |
Hersteller: VISHAY
SIA918EDJ-T1-GE3 SMD N channel transistors
SIA918EDJ-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIA921EDJ-T1-GE3 |
Hersteller: VISHAY
SIA921EDJ-T1-GE3 SMD P channel transistors
SIA921EDJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA923AEDJ-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W
Mounting: SMD
Polarisation: unipolar
Power dissipation: 7.8W
Kind of package: reel; tape
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 0.165Ω
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W
Mounting: SMD
Polarisation: unipolar
Power dissipation: 7.8W
Kind of package: reel; tape
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 0.165Ω
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA923EDJ-T1-GE3 |
Hersteller: VISHAY
SIA923EDJ-T1-GE3 Multi channel transistors
SIA923EDJ-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SiA928DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 7.8W
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 7.8W
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA929DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 5W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 5W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIA931DJ-T1-GE3 |
Hersteller: VISHAY
SIA931DJ-T1-GE3 SMD P channel transistors
SIA931DJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIA938DJT-T1-GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 7.8W
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 7.8W
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA975DJ-T1-GE3 |
Hersteller: VISHAY
SIA975DJ-T1-GE3 SMD P channel transistors
SIA975DJ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIAA00DJ-T1-GE3 |
Hersteller: VISHAY
SIAA00DJ-T1-GE3 SMD N channel transistors
SIAA00DJ-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar