![SIA913ADJ-T1-GE3 SIA913ADJ-T1-GE3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2604/Vishay_PowerPAK SC-70-6 Dual.jpg)
SIA913ADJ-T1-GE3 Vishay Siliconix
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Description: MOSFET 2P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
6000+ | 0.31 EUR |
9000+ | 0.29 EUR |
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Technische Details SIA913ADJ-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6.5W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V, Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Weitere Produktangebote SIA913ADJ-T1-GE3 nach Preis ab 0.29 EUR bis 0.99 EUR
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SIA913ADJ-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 5964 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA913ADJ-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6.5W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
auf Bestellung 17024 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA913ADJ-T1-GE3 |
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auf Bestellung 102000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA913ADJ-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIA913ADJ-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -4.5A; 6.5W Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 6.5W Gate-source voltage: ±8V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA913ADJ-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -4.5A; 6.5W Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 6.5W Gate-source voltage: ±8V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |