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SIA413ADJ-T1-GE3 Vishay Siliconix
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Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
16+ | 1.16 EUR |
100+ | 0.91 EUR |
500+ | 0.77 EUR |
1000+ | 0.63 EUR |
Produktrezensionen
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Technische Details SIA413ADJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Single, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V.
Weitere Produktangebote SIA413ADJ-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIA413ADJ-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIA413ADJ-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Mounting: SMD Power dissipation: 19W Polarisation: unipolar Kind of package: reel; tape Gate charge: 57nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Drain-source voltage: -12V Drain current: -12A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA413ADJ-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V |
Produkt ist nicht verfügbar |
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SIA413ADJ-T1-GE3 | Hersteller : Vishay / Siliconix |
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Produkt ist nicht verfügbar |
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SIA413ADJ-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Mounting: SMD Power dissipation: 19W Polarisation: unipolar Kind of package: reel; tape Gate charge: 57nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Drain-source voltage: -12V Drain current: -12A On-state resistance: 0.1Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |