Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFBC20SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 50W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBC30PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.3A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.2Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIBC40GPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 834 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFPC40PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.3A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFPC50APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 543 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFPC50PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 311 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFPC60LCPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 64A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL213664102E3 | VISHAY |
![]() Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 10VDC; Ø10x20mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 1mF Operating voltage: 10V DC Body dimensions: Ø10x20mm Terminal pitch: 5mm Tolerance: ±20% Service life: 10000h Impedance: 62mΩ Operating temperature: -55...105°C Leads dimensions: L 5mm |
auf Bestellung 1210 Stücke: Lieferzeit 14-21 Tag (e) |
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VOD217T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 80V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-120%@1mA Collector-emitter voltage: 80V Case: SO8 Turn-on time: 3µs Turn-off time: 2.3µs |
auf Bestellung 3825 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ22A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 24.4V; 16.9A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 1475 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ22D-M3/H | VISHAY |
![]() Description: Diode: TVS; 600W; 24.8V; 17.1A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.8V Max. forward impulse current: 17.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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SFH628A-2X018T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-200%@1mA Collector-emitter voltage: 55V Case: Gull wing 4 Turn-on time: 3.5µs Turn-off time: 5µs |
Produkt ist nicht verfügbar |
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SFH628A-3 | VISHAY |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-300%@1mA Collector-emitter voltage: 55V Case: DIP4 Turn-on time: 3.5µs Turn-off time: 5µs |
auf Bestellung 3593 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH628A-4 | VISHAY |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 16-500%@1mA Collector-emitter voltage: 55V Case: DIP4 Turn-on time: 6µs Turn-off time: 5.5µs |
auf Bestellung 3600 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH628A-4X016 | VISHAY |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 16-500%@1mA Collector-emitter voltage: 55V Case: DIP4 Turn-on time: 6µs Turn-off time: 5.5µs |
auf Bestellung 1330 Stücke: Lieferzeit 14-21 Tag (e) |
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VOL628A-3X001T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SOP4L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@1mA Collector-emitter voltage: 80V Case: SOP4L Turn-on time: 6µs Turn-off time: 4µs |
auf Bestellung 2664 Stücke: Lieferzeit 14-21 Tag (e) |
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ZMY13-GS08 | VISHAY |
![]() Description: Diode: Zener; 1W; 13V; SMD; reel,tape; MELF; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: MELF Semiconductor structure: single diode |
auf Bestellung 1265 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YA104KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 100kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 100kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Potentiometer series: T93YA Track material: cermet Operating temperature: -55...125°C Potentiometer standard: 3/8" Temperature coefficient: 100ppm/°C Body dimensions: 9.8x9.8x5mm Terminal pitch: 2.5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64W; 67W; 3296W IP rating: IP67 Torque: 1,5Ncm |
auf Bestellung 1347 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB11N50APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 688 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB17N50LPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD320PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.31A Power dissipation: 1W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of channel: enhanced |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR310PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.7A Pulsed drain current: 6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR320PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1195 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE20PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.8A Pulsed drain current: 7.2A Power dissipation: 54W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIBE30GPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFPE30PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Power dissipation: 125W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFPE40PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFPE50PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.9A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 332 Stücke: Lieferzeit 14-21 Tag (e) |
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SISS10ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 86.8A Pulsed drain current: 150A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.95mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BFC237524101 | VISHAY |
![]() Description: Capacitor: polyester; 100pF; 400VAC; 1kVDC; 10mm; ±5%; 5x13x14.5mm Type of capacitor: polyester Capacitance: 0.1nF Operating voltage: 400V AC; 1kV DC Tolerance: ±5% Mounting: THT Terminal pitch: 10mm Operating temperature: -55...85°C Body dimensions: 5x13x14.5mm Leads dimensions: L 0.6mm |
Produkt ist nicht verfügbar |
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MSS2P3-M3/89A | VISHAY |
![]() Description: Diode: Schottky switching; SMD; 30V; 2A; DO219AD; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Case: DO219AD Max. forward voltage: 0.47V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 2085 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL214658122E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1.2mF; 63VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1.2mF Operating voltage: 63V DC Body dimensions: Ø18x35mm Terminal pitch: 7.5mm Tolerance: ±20% Operating temperature: -40...125°C |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120630R0FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 30Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 30Ω Tolerance: ±1% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
auf Bestellung 9500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120630R1FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 30.1Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 30.1Ω Tolerance: ±1% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2305CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -3.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 856 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2305CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -3.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3850 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301BDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2269 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 6086 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC3510-E4/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1.1V |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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S1A-E3/61T | VISHAY |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V Capacitance: 12pF Mounting: SMD Case: DO214AC; SMA Kind of package: reel; tape Max. off-state voltage: 50V Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 1.8µs Max. forward impulse current: 30A Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching |
auf Bestellung 5239 Stücke: Lieferzeit 14-21 Tag (e) |
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S1AFM-M3/6A | VISHAY |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 1.47us; DO214AC,SMA; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.47µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 7.9pF Case: DO214AC; SMA Max. forward voltage: 0.98V Max. forward impulse current: 35A Leakage current: 0.1mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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ES1A-E3/61T | VISHAY |
![]() Description: Diode: rectifying; SMD; 50V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape Mounting: SMD Max. forward impulse current: 30A Case: DO214AC; SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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IHLP2525CZER150M8A | VISHAY |
![]() Description: Inductor: wire; SMD; 15uH; 2.9A; 118mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 15µH Operating current: 2.9A Resistance: 118mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZER1R0M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1uH; 11A; 9mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C Mounting: SMD Manufacturer series: IHLP Operating temperature: -55...125°C Operating current: 11A Resistance: 9mΩ Type of inductor: wire Inductance: 1µH Body dimensions: 6.47x6.47x3mm Tolerance: ±20% Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP2525CZER1R5M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1.5uH; 9A; 14mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C Operating temperature: -55...125°C Manufacturer series: IHLP Operating current: 9A Inductance: 1.5µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Body dimensions: 6.47x6.47x3mm Tolerance: ±20% Resistance: 14mΩ Mounting: SMD |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP2525CZER220M11 | VISHAY |
![]() Description: Inductor: wire; SMD; 22uH; 2.9A; 128.9mΩ; ±20%; 6.47x6.47x3mm; IHLP Mounting: SMD Manufacturer series: IHLP Operating temperature: -55...125°C Operating current: 2.9A Resistance: 128.9mΩ Type of inductor: wire Inductance: 22µH Body dimensions: 6.47x6.47x3mm Tolerance: ±20% Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP2525CZER2R2M01 | VISHAY |
![]() ![]() Description: Inductor: wire; SMD; 2.2uH; 8A; 18mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C Mounting: SMD Manufacturer series: IHLP Operating temperature: -55...125°C Operating current: 8A Resistance: 18mΩ Type of inductor: wire Inductance: 2.2µH Body dimensions: 6.47x6.47x3mm Tolerance: ±20% Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IHLP2525CZER3R3M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 3.3uH; 6A; 28mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C Type of inductor: wire Mounting: SMD Inductance: 3.3µH Operating current: 6A Resistance: 28mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZER3R3M11 | VISHAY |
![]() Description: Inductor: wire; SMD; 3.3uH; 7A; 24.8mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 3.3µH Operating current: 7A Resistance: 24.8mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZER4R7M11 | VISHAY |
![]() Description: Inductor: wire; SMD; 4.7uH; 6A; 31.8mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 4.7µH Operating current: 6A Resistance: 31.8mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZER4R7M8A | VISHAY |
![]() Description: Inductor: wire; SMD; 4.7uH; 5.6A; 35.9mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 4.7µH Operating current: 5.6A Resistance: 35.9mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZER6R8M11 | VISHAY |
![]() Description: Inductor: wire; SMD; 6.8uH; 5.5A; 44.6mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 6.8µH Operating current: 5.5A Resistance: 44.6mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZERR10M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 0.1uH; 32.5A; 1.5mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 0.1µH Operating current: 32.5A Resistance: 1.5mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZERR22M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 0.22uH; 23A; 2.5mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 0.22µH Operating current: 23A Resistance: 2.5mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZERR47M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 0.47uH; 17.5A; 4mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 0.47µH Operating current: 17.5A Resistance: 4mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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IHLP2525CZERR68M01 | VISHAY |
![]() ![]() Description: Inductor: wire; SMD; 0.68uH; 15.5A; 5mΩ; ±20%; 6.47x6.47x3mm; IHLP Type of inductor: wire Mounting: SMD Inductance: 0.68µH Operating current: 15.5A Resistance: 5mΩ Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
Produkt ist nicht verfügbar |
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CRCW080597R6FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 97.6Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 97.6Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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TSMP1138 | VISHAY |
![]() Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
IRFBC20SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 50W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 50W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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25+ | 2.86 EUR |
IRFBC30PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.3A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.3A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
73+ | 0.99 EUR |
83+ | 0.87 EUR |
93+ | 0.77 EUR |
103+ | 0.7 EUR |
104+ | 0.69 EUR |
109+ | 0.66 EUR |
IRFIBC40GPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 834 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.4 EUR |
32+ | 2.25 EUR |
38+ | 1.89 EUR |
41+ | 1.77 EUR |
250+ | 1.73 EUR |
IRFPC40PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.3A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.3A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.75 EUR |
30+ | 2.46 EUR |
38+ | 1.89 EUR |
41+ | 1.77 EUR |
IRFPC50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 543 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.45 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
IRFPC50PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 311 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 3.06 EUR |
25+ | 2.9 EUR |
32+ | 2.3 EUR |
33+ | 2.17 EUR |
IRFPC60LCPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 5.13 EUR |
21+ | 3.53 EUR |
22+ | 3.33 EUR |
MAL213664102E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 10VDC; Ø10x20mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 10V DC
Body dimensions: Ø10x20mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 62mΩ
Operating temperature: -55...105°C
Leads dimensions: L 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 10VDC; Ø10x20mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 10V DC
Body dimensions: Ø10x20mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 62mΩ
Operating temperature: -55...105°C
Leads dimensions: L 5mm
auf Bestellung 1210 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 1.26 EUR |
87+ | 0.83 EUR |
102+ | 0.71 EUR |
107+ | 0.67 EUR |
VOD217T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 80V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-120%@1mA
Collector-emitter voltage: 80V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 80V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-120%@1mA
Collector-emitter voltage: 80V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.3µs
auf Bestellung 3825 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 0.93 EUR |
115+ | 0.62 EUR |
205+ | 0.35 EUR |
216+ | 0.33 EUR |
SMBJ22A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.4V; 16.9A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.4V; 16.9A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 1475 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
129+ | 0.56 EUR |
199+ | 0.36 EUR |
527+ | 0.14 EUR |
673+ | 0.11 EUR |
712+ | 0.1 EUR |
750+ | 0.097 EUR |
SMBJ22D-M3/H |
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Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.8V; 17.1A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.8V
Max. forward impulse current: 17.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.8V; 17.1A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.8V
Max. forward impulse current: 17.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
SFH628A-2X018T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-200%@1mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 3.5µs
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-200%@1mA
Collector-emitter voltage: 55V
Case: Gull wing 4
Turn-on time: 3.5µs
Turn-off time: 5µs
Produkt ist nicht verfügbar
SFH628A-3 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-300%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 3.5µs
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-300%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 3.5µs
Turn-off time: 5µs
auf Bestellung 3593 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 0.93 EUR |
107+ | 0.67 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
SFH628A-4 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 5.5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 5.5µs
auf Bestellung 3600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
70+ | 1.03 EUR |
104+ | 0.69 EUR |
171+ | 0.42 EUR |
181+ | 0.4 EUR |
SFH628A-4X016 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 5.5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 55V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-500%@1mA
Collector-emitter voltage: 55V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 5.5µs
auf Bestellung 1330 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 1.04 EUR |
120+ | 0.6 EUR |
147+ | 0.49 EUR |
159+ | 0.45 EUR |
165+ | 0.43 EUR |
500+ | 0.41 EUR |
VOL628A-3X001T |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SOP4L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@1mA
Collector-emitter voltage: 80V
Case: SOP4L
Turn-on time: 6µs
Turn-off time: 4µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SOP4L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@1mA
Collector-emitter voltage: 80V
Case: SOP4L
Turn-on time: 6µs
Turn-off time: 4µs
auf Bestellung 2664 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
126+ | 0.57 EUR |
152+ | 0.47 EUR |
156+ | 0.46 EUR |
171+ | 0.42 EUR |
ZMY13-GS08 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 13V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 13V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
340+ | 0.21 EUR |
480+ | 0.15 EUR |
540+ | 0.13 EUR |
655+ | 0.11 EUR |
695+ | 0.1 EUR |
T93YA104KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T93YA
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64W; 67W; 3296W
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T93YA
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64W; 67W; 3296W
IP rating: IP67
Torque: 1,5Ncm
auf Bestellung 1347 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.25 EUR |
44+ | 1.63 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
IRFB11N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.03 EUR |
42+ | 1.72 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
IRFB17N50LPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 3.32 EUR |
33+ | 2.19 EUR |
35+ | 2.06 EUR |
IRFD320PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.31A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.31A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.1 EUR |
IRFR310PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
108+ | 0.67 EUR |
123+ | 0.58 EUR |
140+ | 0.51 EUR |
148+ | 0.48 EUR |
IRFR320PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1195 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
65+ | 1.12 EUR |
117+ | 0.61 EUR |
133+ | 0.54 EUR |
147+ | 0.49 EUR |
155+ | 0.46 EUR |
300+ | 0.45 EUR |
IRFBE20PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 7.2A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 7.2A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.89 EUR |
IRFBE30PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
49+ | 1.47 EUR |
55+ | 1.3 EUR |
62+ | 1.16 EUR |
68+ | 1.06 EUR |
72+ | 1 EUR |
IRFBE30SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 3.25 EUR |
IRFIBE30GPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2 EUR |
37+ | 1.93 EUR |
IRFPE30PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFPE40PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.12 EUR |
25+ | 2.96 EUR |
30+ | 2.39 EUR |
32+ | 2.26 EUR |
IRFPE50PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.6 EUR |
23+ | 3.17 EUR |
27+ | 2.75 EUR |
28+ | 2.6 EUR |
SISS10ADN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86.8A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86.8A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BFC237524101 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 100pF; 400VAC; 1kVDC; 10mm; ±5%; 5x13x14.5mm
Type of capacitor: polyester
Capacitance: 0.1nF
Operating voltage: 400V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 10mm
Operating temperature: -55...85°C
Body dimensions: 5x13x14.5mm
Leads dimensions: L 0.6mm
Category: THT Film Capacitors
Description: Capacitor: polyester; 100pF; 400VAC; 1kVDC; 10mm; ±5%; 5x13x14.5mm
Type of capacitor: polyester
Capacitance: 0.1nF
Operating voltage: 400V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 10mm
Operating temperature: -55...85°C
Body dimensions: 5x13x14.5mm
Leads dimensions: L 0.6mm
Produkt ist nicht verfügbar
MSS2P3-M3/89A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 2A; DO219AD; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Case: DO219AD
Max. forward voltage: 0.47V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 2A; DO219AD; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Case: DO219AD
Max. forward voltage: 0.47V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 2085 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
256+ | 0.28 EUR |
313+ | 0.23 EUR |
529+ | 0.14 EUR |
887+ | 0.081 EUR |
938+ | 0.076 EUR |
1000+ | 0.075 EUR |
MAL214658122E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1.2mF; 63VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1.2mF
Operating voltage: 63V DC
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Operating temperature: -40...125°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1.2mF; 63VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1.2mF
Operating voltage: 63V DC
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Operating temperature: -40...125°C
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.74 EUR |
20+ | 3.63 EUR |
21+ | 3.43 EUR |
CRCW120630R0FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 30Ω
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 30Ω
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 9500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1800+ | 0.042 EUR |
3000+ | 0.025 EUR |
4600+ | 0.016 EUR |
9500+ | 0.0076 EUR |
CRCW120630R1FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 30.1Ω
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 30.1Ω
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.0072 EUR |
SI2305CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 856 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
302+ | 0.24 EUR |
325+ | 0.22 EUR |
382+ | 0.19 EUR |
404+ | 0.18 EUR |
SI2305CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
148+ | 0.49 EUR |
180+ | 0.4 EUR |
252+ | 0.28 EUR |
410+ | 0.17 EUR |
1000+ | 0.16 EUR |
SI2301BDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2269 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
129+ | 0.56 EUR |
154+ | 0.46 EUR |
176+ | 0.41 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |
SI2301CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 6086 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
204+ | 0.35 EUR |
283+ | 0.25 EUR |
334+ | 0.21 EUR |
480+ | 0.15 EUR |
508+ | 0.14 EUR |
GBPC3510-E4/51 |
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Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.43 EUR |
18+ | 3.98 EUR |
24+ | 3.05 EUR |
25+ | 2.89 EUR |
S1A-E3/61T |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Capacitance: 12pF
Mounting: SMD
Case: DO214AC; SMA
Kind of package: reel; tape
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Max. forward impulse current: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Capacitance: 12pF
Mounting: SMD
Case: DO214AC; SMA
Kind of package: reel; tape
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Max. forward impulse current: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
auf Bestellung 5239 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
417+ | 0.17 EUR |
544+ | 0.13 EUR |
794+ | 0.09 EUR |
942+ | 0.076 EUR |
1880+ | 0.038 EUR |
1985+ | 0.036 EUR |
S1AFM-M3/6A |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.47us; DO214AC,SMA; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.47µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 7.9pF
Case: DO214AC; SMA
Max. forward voltage: 0.98V
Max. forward impulse current: 35A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.47us; DO214AC,SMA; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.47µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 7.9pF
Case: DO214AC; SMA
Max. forward voltage: 0.98V
Max. forward impulse current: 35A
Leakage current: 0.1mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
ES1A-E3/61T |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
IHLP2525CZER150M8A |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 15uH; 2.9A; 118mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 15µH
Operating current: 2.9A
Resistance: 118mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 15uH; 2.9A; 118mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 15µH
Operating current: 2.9A
Resistance: 118mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZER1R0M01 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 1uH; 11A; 9mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Manufacturer series: IHLP
Operating temperature: -55...125°C
Operating current: 11A
Resistance: 9mΩ
Type of inductor: wire
Inductance: 1µH
Body dimensions: 6.47x6.47x3mm
Tolerance: ±20%
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 1uH; 11A; 9mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Manufacturer series: IHLP
Operating temperature: -55...125°C
Operating current: 11A
Resistance: 9mΩ
Type of inductor: wire
Inductance: 1µH
Body dimensions: 6.47x6.47x3mm
Tolerance: ±20%
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 5.96 EUR |
IHLP2525CZER1R5M01 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 1.5uH; 9A; 14mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Operating temperature: -55...125°C
Manufacturer series: IHLP
Operating current: 9A
Inductance: 1.5µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Body dimensions: 6.47x6.47x3mm
Tolerance: ±20%
Resistance: 14mΩ
Mounting: SMD
Category: SMD power inductors
Description: Inductor: wire; SMD; 1.5uH; 9A; 14mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Operating temperature: -55...125°C
Manufacturer series: IHLP
Operating current: 9A
Inductance: 1.5µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Body dimensions: 6.47x6.47x3mm
Tolerance: ±20%
Resistance: 14mΩ
Mounting: SMD
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.1 EUR |
IHLP2525CZER220M11 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 22uH; 2.9A; 128.9mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Manufacturer series: IHLP
Operating temperature: -55...125°C
Operating current: 2.9A
Resistance: 128.9mΩ
Type of inductor: wire
Inductance: 22µH
Body dimensions: 6.47x6.47x3mm
Tolerance: ±20%
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 22uH; 2.9A; 128.9mΩ; ±20%; 6.47x6.47x3mm; IHLP
Mounting: SMD
Manufacturer series: IHLP
Operating temperature: -55...125°C
Operating current: 2.9A
Resistance: 128.9mΩ
Type of inductor: wire
Inductance: 22µH
Body dimensions: 6.47x6.47x3mm
Tolerance: ±20%
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.46 EUR |
IHLP2525CZER2R2M01 | ![]() |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 2.2uH; 8A; 18mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Manufacturer series: IHLP
Operating temperature: -55...125°C
Operating current: 8A
Resistance: 18mΩ
Type of inductor: wire
Inductance: 2.2µH
Body dimensions: 6.47x6.47x3mm
Tolerance: ±20%
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 2.2uH; 8A; 18mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Mounting: SMD
Manufacturer series: IHLP
Operating temperature: -55...125°C
Operating current: 8A
Resistance: 18mΩ
Type of inductor: wire
Inductance: 2.2µH
Body dimensions: 6.47x6.47x3mm
Tolerance: ±20%
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.46 EUR |
IHLP2525CZER3R3M01 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 3.3uH; 6A; 28mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Type of inductor: wire
Mounting: SMD
Inductance: 3.3µH
Operating current: 6A
Resistance: 28mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 3.3uH; 6A; 28mΩ; ±20%; 6.47x6.47x3mm; -55÷125°C
Type of inductor: wire
Mounting: SMD
Inductance: 3.3µH
Operating current: 6A
Resistance: 28mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZER3R3M11 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 3.3uH; 7A; 24.8mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 3.3µH
Operating current: 7A
Resistance: 24.8mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 3.3uH; 7A; 24.8mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 3.3µH
Operating current: 7A
Resistance: 24.8mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZER4R7M11 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 6A; 31.8mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 4.7µH
Operating current: 6A
Resistance: 31.8mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 6A; 31.8mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 4.7µH
Operating current: 6A
Resistance: 31.8mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZER4R7M8A |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 5.6A; 35.9mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 4.7µH
Operating current: 5.6A
Resistance: 35.9mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 4.7uH; 5.6A; 35.9mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 4.7µH
Operating current: 5.6A
Resistance: 35.9mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZER6R8M11 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 6.8uH; 5.5A; 44.6mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 6.8µH
Operating current: 5.5A
Resistance: 44.6mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 6.8uH; 5.5A; 44.6mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 6.8µH
Operating current: 5.5A
Resistance: 44.6mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZERR10M01 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.1uH; 32.5A; 1.5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.1µH
Operating current: 32.5A
Resistance: 1.5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.1uH; 32.5A; 1.5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.1µH
Operating current: 32.5A
Resistance: 1.5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZERR22M01 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.22uH; 23A; 2.5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.22µH
Operating current: 23A
Resistance: 2.5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.22uH; 23A; 2.5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.22µH
Operating current: 23A
Resistance: 2.5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZERR47M01 |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.47uH; 17.5A; 4mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.47µH
Operating current: 17.5A
Resistance: 4mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.47uH; 17.5A; 4mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.47µH
Operating current: 17.5A
Resistance: 4mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
IHLP2525CZERR68M01 | ![]() |
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Hersteller: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.68uH; 15.5A; 5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.68µH
Operating current: 15.5A
Resistance: 5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 0.68uH; 15.5A; 5mΩ; ±20%; 6.47x6.47x3mm; IHLP
Type of inductor: wire
Mounting: SMD
Inductance: 0.68µH
Operating current: 15.5A
Resistance: 5mΩ
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Produkt ist nicht verfügbar
CRCW080597R6FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 97.6Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 97.6Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 97.6Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 97.6Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar