| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BPW85A | VISHAY |
 Category: PhototransistorsDescription: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent Type of photoelement: phototransistor LED diameter: 3mm LED lens: transparent Viewing angle: 50° Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Mounting: THT |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW040222R1FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 22.1Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C |
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CRCW040222R1FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 22.1Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
auf Bestellung 972 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW060322R1FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 22.1Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
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CRCW120622R1FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 22.1Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 2065 Stücke: Lieferzeit 14-21 Tag (e) |
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MMA02040C2219FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 22.1Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
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MRS25000C2219FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 22.1Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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BFC233660472 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC Body dimensions: 12.5x6x12mm Mounting: THT Terminal pitch: 10mm Tolerance: ±20% Type of capacitor: polypropylene Capacitance: 4.7nF Operating voltage: 300V AC; 1kV DC |
auf Bestellung 1967 Stücke: Lieferzeit 14-21 Tag (e) |
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TCST2103 | VISHAY |
 Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm Type of sensor: optocoupler Operation mode: through-beam (with slot) Slot width: 3.1mm Aperture width: 1mm Mounting: SMD; THT Body dimensions: 24.5x6.3x10.8mm Collector-emitter voltage: 70V Operating temperature: -55...85°C Kind of output: transistor Kind of optocoupler: slotted with flag Wavelength: 950nm Output current: 4mA |
auf Bestellung 2630 Stücke: Lieferzeit 14-21 Tag (e) |
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593D107X9010D2WE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ Kind of capacitor: low ESR Capacitors series: Tantamount Mounting: SMD Capacitance: 100µF Case - inch: 2917 Case - mm: 7343 Case: D Type of capacitor: tantalum Operating temperature: -55...125°C ESR value: 100mΩ Tolerance: ±10% Operating voltage: 10V DC |
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593D107X9016E2WE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Mounting: SMD Capacitance: 100µF Operating voltage: 16V DC Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 100mΩ Case: E Case - mm: 7343 Case - inch: 2917 |
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WSR2R0100FEA | VISHAY |
Category: SMD resistors Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1% Type of resistor: thin film (Nichrome) Mounting: SMD Case - inch: 4527 Case - mm: 11470 Resistance: 10mΩ Power: 2W Tolerance: ±1% Body dimensions: 11.56x2.41x6.98mm |
auf Bestellung 541 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2351ES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -1.8A |
auf Bestellung 1928 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9933CDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8 Drain-source voltage: -20V Drain current: -4A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SO8 |
auf Bestellung 1988 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIB912DK-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Pulsed drain current: 5A Power dissipation: 2W Case: PowerPAK® SC75 Gate-source voltage: ±8V On-state resistance: 216mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
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SI9926CDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8 Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 20V Drain current: 8A On-state resistance: 18mΩ Type of transistor: N-MOSFET |
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SI9945BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8 Power dissipation: 2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 58mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
auf Bestellung 12829 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4214DDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8 Mounting: SMD Drain-source voltage: 30V Drain current: 7.5A On-state resistance: 19.5mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 |
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| SISH110DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 16.9A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH116DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 13.1A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH106DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 15.6A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 17.6A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±16V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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| SISH112DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.2A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI5935CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 100mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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Si4228DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 8A Pulsed drain current: 50A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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P6SMB36CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB24CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB24CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB24CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB24CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB100A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
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P6SMB100CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB100CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB100CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB100CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB300A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 1.45A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB300A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 1.45A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB30A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB30A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB30A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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M24S4FF130KT30 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.3Ω; 0.4W; ±1%; -55÷155°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 1.3Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV28-050-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3.5A Max. load current: 25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.1V Leakage current: 0.15mA Reverse recovery time: 30ns |
auf Bestellung 2466 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV28-150-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 3.5A Max. load current: 25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.1V Leakage current: 0.15mA Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
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BYV28-600-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.25V Leakage current: 0.15mA Reverse recovery time: 210ns |
auf Bestellung 1363 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV28-200-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.1V Max. load current: 25A Leakage current: 0.15mA Reverse recovery time: 30ns |
auf Bestellung 3024 Stücke: Lieferzeit 14-21 Tag (e) |
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T63YB472KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 4.7kΩ; 250mW; ±10%; linear Mounting: THT Resistance: 4.7kΩ Power: 0.25W Tolerance: ±10% Max. operating voltage: 250V Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C Kind of potentiometer: multiturn IP rating: IP67 Potentiometer standard: 1/4" Type of potentiometer: mounting Number of mechanical turns: 15 ±5 Number of electrical turns: 13 ±2 Potentiometer series: T63YB Characteristics: linear Torque: 1Ncm Track material: cermet |
auf Bestellung 369 Stücke: Lieferzeit 14-21 Tag (e) |
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| PA16NP472MLB15 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 250mW; logarithmic Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Tolerance: ±20% Power: 0.25W Characteristics: logarithmic Shaft diameter: 16mm Leads: solder lugs Track material: plastic Mechanical rotation angle: 300° Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Mechanical durability: 50000 cycles Temperature coefficient: 500ppm/°C Body material: plastic |
Produkt ist nicht verfügbar |
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SMBJ6.0A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.67V; 58.3A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ6.0CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.67V; 58.3A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 5880 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ6.0CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.77V; 58.9A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.77V Max. forward impulse current: 58.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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SMBJ6.0D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.77V; 58.9A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.77V Max. forward impulse current: 58.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50P06-15L_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -50A Pulsed drain current: -200A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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SUD50P06-15-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 113W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -50A Pulsed drain current: -80A Power dissipation: 113W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1722 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD50P06-15L-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 136W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -50A Pulsed drain current: -80A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1513 Stücke: Lieferzeit 14-21 Tag (e) |
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| BPW85A |
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Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent
Type of photoelement: phototransistor
LED diameter: 3mm
LED lens: transparent
Viewing angle: 50°
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Mounting: THT
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 850nm; 70V; 50°; Lens: transparent
Type of photoelement: phototransistor
LED diameter: 3mm
LED lens: transparent
Viewing angle: 50°
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Mounting: THT
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 85+ | 0.84 EUR |
| 137+ | 0.52 EUR |
| 171+ | 0.42 EUR |
| 252+ | 0.28 EUR |
| 266+ | 0.27 EUR |
| CRCW040222R1FKED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| CRCW040222R1FKTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 22.1Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 22.1Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)| CRCW060322R1FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 22.1Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| CRCW120622R1FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 22.1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 22.1Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 22.1Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1800+ | 0.042 EUR |
| MMA02040C2219FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 22.1Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 22.1Ω; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 22.1Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| MRS25000C2219FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 22.1Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 22.1Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 22.1Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| BFC233660472 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Body dimensions: 12.5x6x12mm
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Body dimensions: 12.5x6x12mm
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
auf Bestellung 1967 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 132+ | 0.54 EUR |
| 161+ | 0.44 EUR |
| 271+ | 0.26 EUR |
| 286+ | 0.25 EUR |
| TCST2103 | |
|
Hersteller: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 1mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 4mA
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 1mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 4mA
auf Bestellung 2630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 73+ | 0.98 EUR |
| 96+ | 0.75 EUR |
| 102+ | 0.71 EUR |
| 1020+ | 0.68 EUR |
| 593D107X9010D2WE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Kind of capacitor: low ESR
Capacitors series: Tantamount
Mounting: SMD
Capacitance: 100µF
Case - inch: 2917
Case - mm: 7343
Case: D
Type of capacitor: tantalum
Operating temperature: -55...125°C
ESR value: 100mΩ
Tolerance: ±10%
Operating voltage: 10V DC
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Kind of capacitor: low ESR
Capacitors series: Tantamount
Mounting: SMD
Capacitance: 100µF
Case - inch: 2917
Case - mm: 7343
Case: D
Type of capacitor: tantalum
Operating temperature: -55...125°C
ESR value: 100mΩ
Tolerance: ±10%
Operating voltage: 10V DC
Produkt ist nicht verfügbar
| 593D107X9016E2WE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 100µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 100mΩ
Case: E
Case - mm: 7343
Case - inch: 2917
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 100µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 100mΩ
Case: E
Case - mm: 7343
Case - inch: 2917
Produkt ist nicht verfügbar
| WSR2R0100FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1%
Type of resistor: thin film (Nichrome)
Mounting: SMD
Case - inch: 4527
Case - mm: 11470
Resistance: 10mΩ
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x2.41x6.98mm
Category: SMD resistors
Description: Resistor: thin film (Nichrome); SMD; 4527; 10mΩ; 2W; ±1%
Type of resistor: thin film (Nichrome)
Mounting: SMD
Case - inch: 4527
Case - mm: 11470
Resistance: 10mΩ
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x2.41x6.98mm
auf Bestellung 541 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 51+ | 1.42 EUR |
| 80+ | 0.9 EUR |
| 126+ | 0.57 EUR |
| 133+ | 0.54 EUR |
| SQ2351ES-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -1.8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -1.8A
auf Bestellung 1928 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 82+ | 0.87 EUR |
| 177+ | 0.41 EUR |
| 195+ | 0.37 EUR |
| 255+ | 0.28 EUR |
| 270+ | 0.27 EUR |
| SI9933CDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SO8
auf Bestellung 1988 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 0.72 EUR |
| 187+ | 0.38 EUR |
| 198+ | 0.36 EUR |
| SIB912DK-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 5A
Power dissipation: 2W
Case: PowerPAK® SC75
Gate-source voltage: ±8V
On-state resistance: 216mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 5A
Power dissipation: 2W
Case: PowerPAK® SC75
Gate-source voltage: ±8V
On-state resistance: 216mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI9926CDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SI9945BDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
auf Bestellung 12829 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.3 EUR |
| 61+ | 1.18 EUR |
| 94+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| 2500+ | 0.7 EUR |
| Si4214DDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 19.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 19.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Produkt ist nicht verfügbar
| SISH110DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISH116DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13.1A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13.1A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISH106DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISH108DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISH112DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI5935CDC-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| Si4228DY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| P6SMB36CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB36CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB36CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB36CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB24CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB24CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB24CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB24CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB100A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Produkt ist nicht verfügbar
| P6SMB100A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Produkt ist nicht verfügbar
| P6SMB100A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Produkt ist nicht verfügbar
| P6SMB100A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Produkt ist nicht verfügbar
| P6SMB100CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB100CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB100CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB100CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB300A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 1.45A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 1.45A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB300A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 1.45A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 300V; 1.45A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 1.45A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB30A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB30A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB30A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| M24S4FF130KT30 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.3Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 1.3Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 1.3Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 1.3Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 550+ | 0.13 EUR |
| 925+ | 0.079 EUR |
| 1400+ | 0.051 EUR |
| BYV28-050-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 1.26 EUR |
| 79+ | 0.91 EUR |
| 99+ | 0.73 EUR |
| 105+ | 0.69 EUR |
| BYV28-150-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
| BYV28-600-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.25V
Leakage current: 0.15mA
Reverse recovery time: 210ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.25V
Leakage current: 0.15mA
Reverse recovery time: 210ns
auf Bestellung 1363 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 66+ | 1.09 EUR |
| 76+ | 0.94 EUR |
| 81+ | 0.89 EUR |
| 500+ | 0.86 EUR |
| BYV28-200-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Max. load current: 25A
Leakage current: 0.15mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Max. load current: 25A
Leakage current: 0.15mA
Reverse recovery time: 30ns
auf Bestellung 3024 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 64+ | 1.13 EUR |
| 77+ | 0.94 EUR |
| 81+ | 0.89 EUR |
| 500+ | 0.87 EUR |
| T63YB472KT20 |
|
Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 4.7kΩ; 250mW; ±10%; linear
Mounting: THT
Resistance: 4.7kΩ
Power: 0.25W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Kind of potentiometer: multiturn
IP rating: IP67
Potentiometer standard: 1/4"
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Potentiometer series: T63YB
Characteristics: linear
Torque: 1Ncm
Track material: cermet
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 4.7kΩ; 250mW; ±10%; linear
Mounting: THT
Resistance: 4.7kΩ
Power: 0.25W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Kind of potentiometer: multiturn
IP rating: IP67
Potentiometer standard: 1/4"
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Potentiometer series: T63YB
Characteristics: linear
Torque: 1Ncm
Track material: cermet
auf Bestellung 369 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 4.12 EUR |
| 19+ | 3.82 EUR |
| 32+ | 2.29 EUR |
| 34+ | 2.16 EUR |
| PA16NP472MLB15 |
|
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 250mW; logarithmic
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.25W
Characteristics: logarithmic
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 250mW; logarithmic
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.25W
Characteristics: logarithmic
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
| SMBJ6.0A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67V; 58.3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67V; 58.3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 213+ | 0.34 EUR |
| 275+ | 0.26 EUR |
| 447+ | 0.16 EUR |
| 673+ | 0.11 EUR |
| 712+ | 0.1 EUR |
| 750+ | 0.097 EUR |
| SMBJ6.0CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67V; 58.3A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67V; 58.3A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 5880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 193+ | 0.37 EUR |
| 327+ | 0.22 EUR |
| 579+ | 0.12 EUR |
| SMBJ6.0CD-M3/H |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.77V; 58.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.77V
Max. forward impulse current: 58.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.77V; 58.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.77V
Max. forward impulse current: 58.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
| SMBJ6.0D-M3/H |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.77V; 58.9A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.77V
Max. forward impulse current: 58.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.77V; 58.9A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.77V
Max. forward impulse current: 58.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 237+ | 0.3 EUR |
| 300+ | 0.24 EUR |
| 424+ | 0.17 EUR |
| 743+ | 0.096 EUR |
| 787+ | 0.091 EUR |
| SQD50P06-15L_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| SUD50P06-15-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 113W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -80A
Power dissipation: 113W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 113W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -80A
Power dissipation: 113W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1722 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.12 EUR |
| 26+ | 2.79 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.19 EUR |
| SUD50P06-15L-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 136W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -80A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 136W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -80A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1513 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.16 EUR |
| 27+ | 2.72 EUR |
| 48+ | 1.52 EUR |
| 50+ | 1.43 EUR |