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P6SMB100A-M3/5B VISHAY
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Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape
Technology: TransZorb®
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 85.5V
Features of semiconductor devices: glass passivated
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 4.4A
Breakdown voltage: 100V
Leakage current: 1µA
Anzahl je Verpackung: 3200 Stücke
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Technische Details P6SMB100A-M3/5B VISHAY
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape, Technology: TransZorb®, Case: SMB, Mounting: SMD, Kind of package: reel; tape, Manufacturer series: P6SMB, Semiconductor structure: unidirectional, Max. off-state voltage: 85.5V, Features of semiconductor devices: glass passivated, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Tolerance: ±5%, Max. forward impulse current: 4.4A, Breakdown voltage: 100V, Leakage current: 1µA, Anzahl je Verpackung: 3200 Stücke.
Weitere Produktangebote P6SMB100A-M3/5B
Foto | Bezeichnung | Hersteller | Beschreibung |
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P6SMB100A-M3/5B | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Box (TB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 85.5V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 600W Power Line Protection: No |
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P6SMB100A-M3/5B | Hersteller : Vishay General Semiconductor |
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Produkt ist nicht verfügbar |
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P6SMB100A-M3/5B | Hersteller : VISHAY |
![]() Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; reel,tape Technology: TransZorb® Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Semiconductor structure: unidirectional Max. off-state voltage: 85.5V Features of semiconductor devices: glass passivated Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 4.4A Breakdown voltage: 100V Leakage current: 1µA |
Produkt ist nicht verfügbar |