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V40DL45BP-M3/I V40DL45BP-M3/I Vishay General Semiconductor - Diodes Division v40dl45bp.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.81 EUR
Mindestbestellmenge: 2000
V40DL45BP-M3/I V40DL45BP-M3/I Vishay General Semiconductor - Diodes Division v40dl45bp.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
auf Bestellung 5974 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
11+ 1.6 EUR
100+ 1.25 EUR
500+ 1.06 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 10
PLZ18A-G3/H PLZ18A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Produkt ist nicht verfügbar
PLZ18C-G3/H PLZ18C-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
Produkt ist nicht verfügbar
PLZ24B-G3/H PLZ24B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Produkt ist nicht verfügbar
SE10DGHM3/I SE10DGHM3/I Vishay General Semiconductor - Diodes Division se10db-m3.pdf Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V40DL45-M3/I V40DL45-M3/I Vishay General Semiconductor - Diodes Division v40dl45.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Produkt ist nicht verfügbar
V40M150C-M3/4W V40M150C-M3/4W Vishay General Semiconductor - Diodes Division v40m150c.pdf Description: DIODE SCHOTTKY 150V TO220
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
V60M120C-M3/4W V60M120C-M3/4W Vishay General Semiconductor - Diodes Division v60m120c.pdf Description: DIODE SCHOTTKY 120V TO220
auf Bestellung 1888 Stücke:
Lieferzeit 10-14 Tag (e)
PLZ18A-G3/H PLZ18A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
auf Bestellung 1861 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
39+ 0.45 EUR
100+ 0.24 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 33
PLZ18C-G3/H PLZ18C-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
auf Bestellung 1432 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
PLZ24B-G3/H PLZ24B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Produkt ist nicht verfügbar
SE10DGHM3/I SE10DGHM3/I Vishay General Semiconductor - Diodes Division se10db-m3.pdf Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
14+ 1.31 EUR
Mindestbestellmenge: 12
V40DL45-M3/I V40DL45-M3/I Vishay General Semiconductor - Diodes Division v40dl45.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
auf Bestellung 2086 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+ 1.8 EUR
100+ 1.21 EUR
500+ 0.96 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 7
VS-10CSH02HM3/86A VS-10CSH02HM3/86A Vishay General Semiconductor - Diodes Division vs-10csh02hm3.pdf Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-4CSH01HM3/86A VS-4CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-4csh01hm3.pdf Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4CSH02HM3/86A VS-4CSH02HM3/86A Vishay General Semiconductor - Diodes Division vs-4csh02hm3.pdf Description: DIODE ARRAY GP 200V 2A TO277A
Produkt ist nicht verfügbar
VS-4CSH02-M3/86A VS-4CSH02-M3/86A Vishay General Semiconductor - Diodes Division vs-4csh02-m3.pdf Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.37 EUR
Mindestbestellmenge: 1500
VS-4ESH01HM3/86A VS-4ESH01HM3/86A Vishay General Semiconductor - Diodes Division vs-4esh01hm3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4ESH01-M3/86A VS-4ESH01-M3/86A Vishay General Semiconductor - Diodes Division vs-4esh01-m3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.35 EUR
3000+ 0.32 EUR
7500+ 0.3 EUR
10500+ 0.28 EUR
Mindestbestellmenge: 1500
VS-6CSH01-M3/86A VS-6CSH01-M3/86A Vishay General Semiconductor - Diodes Division vs-6csh01-m3.pdf Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.43 EUR
Mindestbestellmenge: 1500
VS-6CSH02-M3/86A VS-6CSH02-M3/86A Vishay General Semiconductor - Diodes Division vs-6csh02-m3.pdf Description: DIODE HYP FAST 200V 3A TO277A
Produkt ist nicht verfügbar
VS-6ESH01HM3/86A VS-6ESH01HM3/86A Vishay General Semiconductor - Diodes Division vs-6esh01hm3.pdf Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.54 EUR
Mindestbestellmenge: 1500
VS-6ESH01-M3/86A VS-6ESH01-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh01-m3.pdf Description: DIODE GEN PURP 100V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESH06HM3/86A VS-6ESH06HM3/86A Vishay General Semiconductor - Diodes Division vs-6esh06hm3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.57 EUR
3000+ 0.51 EUR
Mindestbestellmenge: 1500
VS-6ESH06-M3/86A VS-6ESH06-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh06-m3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESU06HM3/86A VS-6ESU06HM3/86A Vishay General Semiconductor - Diodes Division vs-6esu06hm3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.6 EUR
Mindestbestellmenge: 1500
VS-6ESU06-M3/86A VS-6ESU06-M3/86A Vishay General Semiconductor - Diodes Division vs-6esu06-m3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
VS-10CSH02HM3/86A VS-10CSH02HM3/86A Vishay General Semiconductor - Diodes Division vs-10csh02hm3.pdf Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1232 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
16+ 1.11 EUR
100+ 0.87 EUR
500+ 0.73 EUR
Mindestbestellmenge: 13
VS-4CSH01HM3/86A VS-4CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-4csh01hm3.pdf Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4CSH02HM3/86A VS-4CSH02HM3/86A Vishay General Semiconductor - Diodes Division vs-4csh02hm3.pdf Description: DIODE ARRAY GP 200V 2A TO277A
Produkt ist nicht verfügbar
VS-4CSH02-M3/86A VS-4CSH02-M3/86A Vishay General Semiconductor - Diodes Division vs-4csh02-m3.pdf Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
22+ 0.81 EUR
100+ 0.6 EUR
500+ 0.48 EUR
Mindestbestellmenge: 19
VS-4ESH01HM3/86A VS-4ESH01HM3/86A Vishay General Semiconductor - Diodes Division vs-4esh01hm3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+ 1.02 EUR
100+ 0.78 EUR
500+ 0.62 EUR
Mindestbestellmenge: 16
VS-4ESH01-M3/86A VS-4ESH01-M3/86A Vishay General Semiconductor - Diodes Division vs-4esh01-m3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 14524 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.8 EUR
100+ 0.56 EUR
500+ 0.44 EUR
Mindestbestellmenge: 19
VS-6CSH01-M3/86A VS-6CSH01-M3/86A Vishay General Semiconductor - Diodes Division vs-6csh01-m3.pdf Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1609 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.51 EUR
Mindestbestellmenge: 18
VS-6CSH02-M3/86A VS-6CSH02-M3/86A Vishay General Semiconductor - Diodes Division vs-6csh02-m3.pdf Description: DIODE HYP FAST 200V 3A TO277A
auf Bestellung 23 Stücke:
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16+1.14 EUR
18+ 1.01 EUR
Mindestbestellmenge: 16
VS-6ESH01HM3/86A VS-6ESH01HM3/86A Vishay General Semiconductor - Diodes Division vs-6esh01hm3.pdf Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2451 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
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500+ 0.63 EUR
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VS-6ESH01-M3/86A VS-6ESH01-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh01-m3.pdf Description: DIODE GEN PURP 100V 6A TO277A
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6ESH06HM3/86A VS-6ESH06HM3/86A Vishay General Semiconductor - Diodes Division vs-6esh06hm3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
16+ 1.16 EUR
100+ 0.8 EUR
500+ 0.67 EUR
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VS-6ESH06-M3/86A VS-6ESH06-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh06-m3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESU06HM3/86A VS-6ESU06HM3/86A Vishay General Semiconductor - Diodes Division vs-6esu06hm3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2166 Stücke:
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13+1.41 EUR
15+ 1.24 EUR
100+ 0.95 EUR
500+ 0.75 EUR
Mindestbestellmenge: 13
VS-6ESU06-M3/86A VS-6ESU06-M3/86A Vishay General Semiconductor - Diodes Division vs-6esu06-m3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 36 Stücke:
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17+1.07 EUR
19+ 0.94 EUR
Mindestbestellmenge: 17
SE10PJ-M3/84A SE10PJ-M3/84A Vishay General Semiconductor - Diodes Division se10pb.pdf Description: DIODE GEN PURP 600V 1A DO220AA
auf Bestellung 5485 Stücke:
Lieferzeit 10-14 Tag (e)
SE15PG-M3/84A SE15PG-M3/84A Vishay General Semiconductor - Diodes Division se15pj.pdf Description: DIODE GEN PURP 400V 1.5A DO220AA
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6CSH01HM3/86A VS-6CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-6csh01hm3.pdf Description: DIODE 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-6ESH02-M3/86A VS-6ESH02-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh02-m3.pdf Description: DIODE GEN PURP 200V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
SE10DBHM3/I SE10DBHM3/I Vishay General Semiconductor - Diodes Division se10db-m3.pdf Description: DIODE GEN PURP 100V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-6CSH01HM3/86A VS-6CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-6csh01hm3.pdf Description: DIODE 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6ESH02-M3/86A VS-6ESH02-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh02-m3.pdf Description: DIODE GEN PURP 200V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
21+ 0.84 EUR
100+ 0.58 EUR
500+ 0.49 EUR
Mindestbestellmenge: 19
SE10DBHM3/I SE10DBHM3/I Vishay General Semiconductor - Diodes Division se10db-m3.pdf Description: DIODE GEN PURP 100V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10MQ100HM3/5AT VS-10MQ100HM3/5AT Vishay General Semiconductor - Diodes Division vs-10mq100hm3.pdf Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.15 EUR
Mindestbestellmenge: 7500
VS-15MQ040HM3/5AT VS-15MQ040HM3/5AT Vishay General Semiconductor - Diodes Division vs-15mq040hm3.pdf Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.22 EUR
15000+ 0.19 EUR
52500+ 0.18 EUR
Mindestbestellmenge: 7500
VS-20MQ060HM3/5AT VS-20MQ060HM3/5AT Vishay General Semiconductor - Diodes Division vs-20mq060hm3.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 31pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
VS-MBRS140-M3/5BT VS-MBRS140-M3/5BT Vishay General Semiconductor - Diodes Division vsmbrs140m3.pdf Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)
3200+0.16 EUR
9600+ 0.14 EUR
Mindestbestellmenge: 3200
VS-10BQ030-M3/5BT VS-10BQ030-M3/5BT Vishay General Semiconductor - Diodes Division vs-10bq030-m3.pdf Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 36921 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
41+ 0.44 EUR
100+ 0.26 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
VS-30BQ060HM3/9AT VS-30BQ060HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq060hm3.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.31 EUR
7000+ 0.3 EUR
10500+ 0.28 EUR
Mindestbestellmenge: 3500
VS-30BQ100HM3/9AT VS-30BQ100HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq100hm3.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.31 EUR
7000+ 0.29 EUR
Mindestbestellmenge: 3500
V20202C-M3/4W V20202C-M3/4W Vishay General Semiconductor - Diodes Division v20202c.pdf Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 5428 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.56 EUR
10+ 2.94 EUR
100+ 2.03 EUR
500+ 1.64 EUR
1000+ 1.51 EUR
2000+ 1.4 EUR
5000+ 1.36 EUR
Mindestbestellmenge: 4
V20202G-M3/4W V20202G-M3/4W Vishay General Semiconductor - Diodes Division v20202g-m3.pdf Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VI30202C-M3/4W VI30202C-M3/4W Vishay General Semiconductor - Diodes Division v30202c.pdf Description: DIODE SCHOTTKY 200V 30A TO262AA
Produkt ist nicht verfügbar
V40DL45BP-M3/I v40dl45bp.pdf
V40DL45BP-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.81 EUR
Mindestbestellmenge: 2000
V40DL45BP-M3/I v40dl45bp.pdf
V40DL45BP-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
auf Bestellung 5974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.95 EUR
11+ 1.6 EUR
100+ 1.25 EUR
500+ 1.06 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 10
PLZ18A-G3/H plzseries.pdf
PLZ18A-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Produkt ist nicht verfügbar
PLZ18C-G3/H plzseries.pdf
PLZ18C-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
Produkt ist nicht verfügbar
PLZ24B-G3/H plzseries.pdf
PLZ24B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Produkt ist nicht verfügbar
SE10DGHM3/I se10db-m3.pdf
SE10DGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V40DL45-M3/I v40dl45.pdf
V40DL45-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Produkt ist nicht verfügbar
V40M150C-M3/4W v40m150c.pdf
V40M150C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V TO220
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
V60M120C-M3/4W v60m120c.pdf
V60M120C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V TO220
auf Bestellung 1888 Stücke:
Lieferzeit 10-14 Tag (e)
PLZ18A-G3/H plzseries.pdf
PLZ18A-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
auf Bestellung 1861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
39+ 0.45 EUR
100+ 0.24 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 33
PLZ18C-G3/H plzseries.pdf
PLZ18C-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
auf Bestellung 1432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
PLZ24B-G3/H plzseries.pdf
PLZ24B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Produkt ist nicht verfügbar
SE10DGHM3/I se10db-m3.pdf
SE10DGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.51 EUR
14+ 1.31 EUR
Mindestbestellmenge: 12
V40DL45-M3/I v40dl45.pdf
V40DL45-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
auf Bestellung 2086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.83 EUR
10+ 1.8 EUR
100+ 1.21 EUR
500+ 0.96 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 7
VS-10CSH02HM3/86A vs-10csh02hm3.pdf
VS-10CSH02HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-4CSH01HM3/86A vs-4csh01hm3.pdf
VS-4CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4CSH02HM3/86A vs-4csh02hm3.pdf
VS-4CSH02HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Produkt ist nicht verfügbar
VS-4CSH02-M3/86A vs-4csh02-m3.pdf
VS-4CSH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.37 EUR
Mindestbestellmenge: 1500
VS-4ESH01HM3/86A vs-4esh01hm3.pdf
VS-4ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4ESH01-M3/86A vs-4esh01-m3.pdf
VS-4ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.35 EUR
3000+ 0.32 EUR
7500+ 0.3 EUR
10500+ 0.28 EUR
Mindestbestellmenge: 1500
VS-6CSH01-M3/86A vs-6csh01-m3.pdf
VS-6CSH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.43 EUR
Mindestbestellmenge: 1500
VS-6CSH02-M3/86A vs-6csh02-m3.pdf
VS-6CSH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HYP FAST 200V 3A TO277A
Produkt ist nicht verfügbar
VS-6ESH01HM3/86A vs-6esh01hm3.pdf
VS-6ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.54 EUR
Mindestbestellmenge: 1500
VS-6ESH01-M3/86A vs-6esh01-m3.pdf
VS-6ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESH06HM3/86A vs-6esh06hm3.pdf
VS-6ESH06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.57 EUR
3000+ 0.51 EUR
Mindestbestellmenge: 1500
VS-6ESH06-M3/86A vs-6esh06-m3.pdf
VS-6ESH06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESU06HM3/86A vs-6esu06hm3.pdf
VS-6ESU06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.6 EUR
Mindestbestellmenge: 1500
VS-6ESU06-M3/86A vs-6esu06-m3.pdf
VS-6ESU06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
VS-10CSH02HM3/86A vs-10csh02hm3.pdf
VS-10CSH02HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.11 EUR
100+ 0.87 EUR
500+ 0.73 EUR
Mindestbestellmenge: 13
VS-4CSH01HM3/86A vs-4csh01hm3.pdf
VS-4CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4CSH02HM3/86A vs-4csh02hm3.pdf
VS-4CSH02HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Produkt ist nicht verfügbar
VS-4CSH02-M3/86A vs-4csh02-m3.pdf
VS-4CSH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
22+ 0.81 EUR
100+ 0.6 EUR
500+ 0.48 EUR
Mindestbestellmenge: 19
VS-4ESH01HM3/86A vs-4esh01hm3.pdf
VS-4ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.02 EUR
100+ 0.78 EUR
500+ 0.62 EUR
Mindestbestellmenge: 16
VS-4ESH01-M3/86A vs-4esh01-m3.pdf
VS-4ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 14524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.8 EUR
100+ 0.56 EUR
500+ 0.44 EUR
Mindestbestellmenge: 19
VS-6CSH01-M3/86A vs-6csh01-m3.pdf
VS-6CSH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.51 EUR
Mindestbestellmenge: 18
VS-6CSH02-M3/86A vs-6csh02-m3.pdf
VS-6CSH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HYP FAST 200V 3A TO277A
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
18+ 1.01 EUR
Mindestbestellmenge: 16
VS-6ESH01HM3/86A vs-6esh01hm3.pdf
VS-6ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.27 EUR
17+ 1.09 EUR
100+ 0.76 EUR
500+ 0.63 EUR
Mindestbestellmenge: 14
VS-6ESH01-M3/86A vs-6esh01-m3.pdf
VS-6ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6ESH06HM3/86A vs-6esh06hm3.pdf
VS-6ESH06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.34 EUR
16+ 1.16 EUR
100+ 0.8 EUR
500+ 0.67 EUR
Mindestbestellmenge: 14
VS-6ESH06-M3/86A vs-6esh06-m3.pdf
VS-6ESH06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESU06HM3/86A vs-6esu06hm3.pdf
VS-6ESU06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2166 Stücke:
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Anzahl Preis ohne MwSt
13+1.41 EUR
15+ 1.24 EUR
100+ 0.95 EUR
500+ 0.75 EUR
Mindestbestellmenge: 13
VS-6ESU06-M3/86A vs-6esu06-m3.pdf
VS-6ESU06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 36 Stücke:
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17+1.07 EUR
19+ 0.94 EUR
Mindestbestellmenge: 17
SE10PJ-M3/84A se10pb.pdf
SE10PJ-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO220AA
auf Bestellung 5485 Stücke:
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SE15PG-M3/84A se15pj.pdf
SE15PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO220AA
auf Bestellung 265 Stücke:
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VS-6CSH01HM3/86A vs-6csh01hm3.pdf
VS-6CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-6ESH02-M3/86A vs-6esh02-m3.pdf
VS-6ESH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
SE10DBHM3/I se10db-m3.pdf
SE10DBHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-6CSH01HM3/86A vs-6csh01hm3.pdf
VS-6CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1 Stücke:
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VS-6ESH02-M3/86A vs-6esh02-m3.pdf
VS-6ESH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1979 Stücke:
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Anzahl Preis ohne MwSt
19+0.97 EUR
21+ 0.84 EUR
100+ 0.58 EUR
500+ 0.49 EUR
Mindestbestellmenge: 19
SE10DBHM3/I se10db-m3.pdf
SE10DBHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10MQ100HM3/5AT vs-10mq100hm3.pdf
VS-10MQ100HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
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Anzahl Preis ohne MwSt
7500+0.15 EUR
Mindestbestellmenge: 7500
VS-15MQ040HM3/5AT vs-15mq040hm3.pdf
VS-15MQ040HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 52500 Stücke:
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Anzahl Preis ohne MwSt
7500+0.22 EUR
15000+ 0.19 EUR
52500+ 0.18 EUR
Mindestbestellmenge: 7500
VS-20MQ060HM3/5AT vs-20mq060hm3.pdf
VS-20MQ060HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 31pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
VS-MBRS140-M3/5BT vsmbrs140m3.pdf
VS-MBRS140-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3200+0.16 EUR
9600+ 0.14 EUR
Mindestbestellmenge: 3200
VS-10BQ030-M3/5BT vs-10bq030-m3.pdf
VS-10BQ030-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 36921 Stücke:
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Anzahl Preis ohne MwSt
32+0.56 EUR
41+ 0.44 EUR
100+ 0.26 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
VS-30BQ060HM3/9AT vs-30bq060hm3.pdf
VS-30BQ060HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.31 EUR
7000+ 0.3 EUR
10500+ 0.28 EUR
Mindestbestellmenge: 3500
VS-30BQ100HM3/9AT vs-30bq100hm3.pdf
VS-30BQ100HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.31 EUR
7000+ 0.29 EUR
Mindestbestellmenge: 3500
V20202C-M3/4W v20202c.pdf
V20202C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 5428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.56 EUR
10+ 2.94 EUR
100+ 2.03 EUR
500+ 1.64 EUR
1000+ 1.51 EUR
2000+ 1.4 EUR
5000+ 1.36 EUR
Mindestbestellmenge: 4
V20202G-M3/4W v20202g-m3.pdf
V20202G-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VI30202C-M3/4W v30202c.pdf
VI30202C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 30A TO262AA
Produkt ist nicht verfügbar
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