Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38456) > Seite 332 nach 641

Wählen Sie Seite:   [  << Vorherige Seite ]  1 64 128 192 256 320 327 328 329 330 331 332 333 334 335 336 337 384 448 512 576 640 641  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
VS-4CSH01HM3/86A VS-4CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-4csh01hm3.pdf Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4CSH02HM3/86A VS-4CSH02HM3/86A Vishay General Semiconductor - Diodes Division vs-4csh02hm3.pdf Description: DIODE ARRAY GP 200V 2A TO277A
Produkt ist nicht verfügbar
VS-4CSH02-M3/86A VS-4CSH02-M3/86A Vishay General Semiconductor - Diodes Division vs-4csh02-m3.pdf Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.37 EUR
Mindestbestellmenge: 1500
VS-4ESH01HM3/86A VS-4ESH01HM3/86A Vishay General Semiconductor - Diodes Division vs-4esh01hm3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4ESH01-M3/86A VS-4ESH01-M3/86A Vishay General Semiconductor - Diodes Division vs-4esh01-m3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.35 EUR
3000+ 0.32 EUR
7500+ 0.3 EUR
10500+ 0.28 EUR
Mindestbestellmenge: 1500
VS-6CSH01-M3/86A VS-6CSH01-M3/86A Vishay General Semiconductor - Diodes Division vs-6csh01-m3.pdf Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.43 EUR
Mindestbestellmenge: 1500
VS-6CSH02-M3/86A VS-6CSH02-M3/86A Vishay General Semiconductor - Diodes Division vs-6csh02-m3.pdf Description: DIODE HYP FAST 200V 3A TO277A
Produkt ist nicht verfügbar
VS-6ESH01HM3/86A VS-6ESH01HM3/86A Vishay General Semiconductor - Diodes Division vs-6esh01hm3.pdf Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.54 EUR
Mindestbestellmenge: 1500
VS-6ESH01-M3/86A VS-6ESH01-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh01-m3.pdf Description: DIODE GEN PURP 100V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESH06HM3/86A VS-6ESH06HM3/86A Vishay General Semiconductor - Diodes Division vs-6esh06hm3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.57 EUR
3000+ 0.51 EUR
Mindestbestellmenge: 1500
VS-6ESH06-M3/86A VS-6ESH06-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh06-m3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESU06HM3/86A VS-6ESU06HM3/86A Vishay General Semiconductor - Diodes Division vs-6esu06hm3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.6 EUR
Mindestbestellmenge: 1500
VS-6ESU06-M3/86A VS-6ESU06-M3/86A Vishay General Semiconductor - Diodes Division vs-6esu06-m3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
VS-10CSH02HM3/86A VS-10CSH02HM3/86A Vishay General Semiconductor - Diodes Division vs-10csh02hm3.pdf Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1232 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
16+ 1.11 EUR
100+ 0.87 EUR
500+ 0.73 EUR
Mindestbestellmenge: 13
VS-4CSH01HM3/86A VS-4CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-4csh01hm3.pdf Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4CSH02HM3/86A VS-4CSH02HM3/86A Vishay General Semiconductor - Diodes Division vs-4csh02hm3.pdf Description: DIODE ARRAY GP 200V 2A TO277A
Produkt ist nicht verfügbar
VS-4CSH02-M3/86A VS-4CSH02-M3/86A Vishay General Semiconductor - Diodes Division vs-4csh02-m3.pdf Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
22+ 0.81 EUR
100+ 0.6 EUR
500+ 0.48 EUR
Mindestbestellmenge: 19
VS-4ESH01HM3/86A VS-4ESH01HM3/86A Vishay General Semiconductor - Diodes Division vs-4esh01hm3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+ 1.02 EUR
100+ 0.78 EUR
500+ 0.62 EUR
Mindestbestellmenge: 16
VS-4ESH01-M3/86A VS-4ESH01-M3/86A Vishay General Semiconductor - Diodes Division vs-4esh01-m3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 14524 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.8 EUR
100+ 0.56 EUR
500+ 0.44 EUR
Mindestbestellmenge: 19
VS-6CSH01-M3/86A VS-6CSH01-M3/86A Vishay General Semiconductor - Diodes Division vs-6csh01-m3.pdf Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1609 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.51 EUR
Mindestbestellmenge: 18
VS-6CSH02-M3/86A VS-6CSH02-M3/86A Vishay General Semiconductor - Diodes Division vs-6csh02-m3.pdf Description: DIODE HYP FAST 200V 3A TO277A
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
18+ 1.01 EUR
Mindestbestellmenge: 16
VS-6ESH01HM3/86A VS-6ESH01HM3/86A Vishay General Semiconductor - Diodes Division vs-6esh01hm3.pdf Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2451 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
17+ 1.09 EUR
100+ 0.76 EUR
500+ 0.63 EUR
Mindestbestellmenge: 14
VS-6ESH01-M3/86A VS-6ESH01-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh01-m3.pdf Description: DIODE GEN PURP 100V 6A TO277A
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6ESH06HM3/86A VS-6ESH06HM3/86A Vishay General Semiconductor - Diodes Division vs-6esh06hm3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
16+ 1.16 EUR
100+ 0.8 EUR
500+ 0.67 EUR
Mindestbestellmenge: 14
VS-6ESH06-M3/86A VS-6ESH06-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh06-m3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESU06HM3/86A VS-6ESU06HM3/86A Vishay General Semiconductor - Diodes Division vs-6esu06hm3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
15+ 1.24 EUR
100+ 0.95 EUR
500+ 0.75 EUR
Mindestbestellmenge: 13
VS-6ESU06-M3/86A VS-6ESU06-M3/86A Vishay General Semiconductor - Diodes Division vs-6esu06-m3.pdf Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+ 0.94 EUR
Mindestbestellmenge: 17
SE10PJ-M3/84A SE10PJ-M3/84A Vishay General Semiconductor - Diodes Division se10pb.pdf Description: DIODE GEN PURP 600V 1A DO220AA
auf Bestellung 5485 Stücke:
Lieferzeit 10-14 Tag (e)
SE15PG-M3/84A SE15PG-M3/84A Vishay General Semiconductor - Diodes Division se15pj.pdf Description: DIODE GEN PURP 400V 1.5A DO220AA
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6CSH01HM3/86A VS-6CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-6csh01hm3.pdf Description: DIODE 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-6ESH02-M3/86A VS-6ESH02-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh02-m3.pdf Description: DIODE GEN PURP 200V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
SE10DBHM3/I SE10DBHM3/I Vishay General Semiconductor - Diodes Division se10db-m3.pdf Description: DIODE GEN PURP 100V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-6CSH01HM3/86A VS-6CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-6csh01hm3.pdf Description: DIODE 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6ESH02-M3/86A VS-6ESH02-M3/86A Vishay General Semiconductor - Diodes Division vs-6esh02-m3.pdf Description: DIODE GEN PURP 200V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
21+ 0.84 EUR
100+ 0.58 EUR
500+ 0.49 EUR
Mindestbestellmenge: 19
SE10DBHM3/I SE10DBHM3/I Vishay General Semiconductor - Diodes Division se10db-m3.pdf Description: DIODE GEN PURP 100V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10MQ100HM3/5AT VS-10MQ100HM3/5AT Vishay General Semiconductor - Diodes Division vs-10mq100hm3.pdf Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.15 EUR
Mindestbestellmenge: 7500
VS-15MQ040HM3/5AT VS-15MQ040HM3/5AT Vishay General Semiconductor - Diodes Division vs-15mq040hm3.pdf Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.22 EUR
15000+ 0.19 EUR
52500+ 0.18 EUR
Mindestbestellmenge: 7500
VS-20MQ060HM3/5AT VS-20MQ060HM3/5AT Vishay General Semiconductor - Diodes Division vs-20mq060hm3.pdf Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 31pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
VS-MBRS140-M3/5BT VS-MBRS140-M3/5BT Vishay General Semiconductor - Diodes Division vsmbrs140m3.pdf Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
3200+0.15 EUR
6400+ 0.14 EUR
9600+ 0.13 EUR
Mindestbestellmenge: 3200
VS-10BQ030-M3/5BT VS-10BQ030-M3/5BT Vishay General Semiconductor - Diodes Division vs-10bq030-m3.pdf Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 35906 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
45+ 0.4 EUR
100+ 0.27 EUR
500+ 0.21 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 30
VS-30BQ060HM3/9AT VS-30BQ060HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq060hm3.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.3 EUR
7000+ 0.28 EUR
10500+ 0.27 EUR
17500+ 0.26 EUR
Mindestbestellmenge: 3500
VS-30BQ100HM3/9AT VS-30BQ100HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq100hm3.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.3 EUR
Mindestbestellmenge: 3500
V20202C-M3/4W V20202C-M3/4W Vishay General Semiconductor - Diodes Division v20202c.pdf Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 5428 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.56 EUR
10+ 2.94 EUR
100+ 2.03 EUR
500+ 1.64 EUR
1000+ 1.51 EUR
2000+ 1.4 EUR
5000+ 1.36 EUR
Mindestbestellmenge: 4
V20202G-M3/4W V20202G-M3/4W Vishay General Semiconductor - Diodes Division v20202g-m3.pdf Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VI30202C-M3/4W VI30202C-M3/4W Vishay General Semiconductor - Diodes Division v30202c.pdf Description: DIODE SCHOTTKY 200V 30A TO262AA
Produkt ist nicht verfügbar
VIT5202-M3/4W VIT5202-M3/4W Vishay General Semiconductor - Diodes Division vt5202-m3.pdf Description: DIODE SCHOTTKY 200V 5A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VT10202C-M3/4W VT10202C-M3/4W Vishay General Semiconductor - Diodes Division vt10202c.pdf Description: DIODE ARR SCHOTT 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VT5202-M3/4W VT5202-M3/4W Vishay General Semiconductor - Diodes Division vt5202-m3.pdf Description: DIODE SCHOTTKY 200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1216pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VBT5202-M3/8W VBT5202-M3/8W Vishay General Semiconductor - Diodes Division vt5202-m3.pdf Description: DIODE SCHOTTKY 200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.17 EUR
1600+ 0.96 EUR
2400+ 0.9 EUR
5600+ 0.86 EUR
Mindestbestellmenge: 800
VBT10202C-M3/8W VBT10202C-M3/8W Vishay General Semiconductor - Diodes Division vt10202c.pdf Description: DIODE ARR SCHOTT 200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VS-10CSH01HM3/86A VS-10CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-10csh01hm3.pdf Description: DIODE ARRAY GP 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.6 EUR
Mindestbestellmenge: 1500
VS-10CSH01-M3/86A VS-10CSH01-M3/86A Vishay General Semiconductor - Diodes Division vs-10csh01-m3.pdf Description: DIODE ARRAY GP 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-8CSH01-M3/86A VS-8CSH01-M3/86A Vishay General Semiconductor - Diodes Division vs-8csh01-m3.pdf Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.51 EUR
3000+ 0.45 EUR
Mindestbestellmenge: 1500
VBT5202-M3/8W VBT5202-M3/8W Vishay General Semiconductor - Diodes Division vt5202-m3.pdf Description: DIODE SCHOTTKY 200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 9782 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.18 EUR
10+ 1.78 EUR
100+ 1.39 EUR
Mindestbestellmenge: 9
VBT10202C-M3/8W VBT10202C-M3/8W Vishay General Semiconductor - Diodes Division vt10202c.pdf Description: DIODE ARR SCHOTT 200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VS-10CSH01HM3/86A VS-10CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-10csh01hm3.pdf Description: DIODE ARRAY GP 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2766 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
16+ 1.11 EUR
100+ 0.87 EUR
500+ 0.73 EUR
Mindestbestellmenge: 13
VS-10CSH01-M3/86A VS-10CSH01-M3/86A Vishay General Semiconductor - Diodes Division vs-10csh01-m3.pdf Description: DIODE ARRAY GP 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
18+ 1.03 EUR
100+ 0.71 EUR
Mindestbestellmenge: 15
VS-8CSH01-M3/86A VS-8CSH01-M3/86A Vishay General Semiconductor - Diodes Division vs-8csh01-m3.pdf Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 4280 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
18+ 1.03 EUR
100+ 0.71 EUR
500+ 0.6 EUR
Mindestbestellmenge: 15
SE15PB-M3/84A SE15PB-M3/84A Vishay General Semiconductor - Diodes Division se15pj.pdf Description: DIODE GEN PURP 100V 1.5A DO220AA
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
SE15PD-M3/84A SE15PD-M3/84A Vishay General Semiconductor - Diodes Division se15pj.pdf Description: DIODE GEN PURP 200V 1.5A DO220AA
auf Bestellung 5150 Stücke:
Lieferzeit 10-14 Tag (e)
VS-4CSH01HM3/86A vs-4csh01hm3.pdf
VS-4CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4CSH02HM3/86A vs-4csh02hm3.pdf
VS-4CSH02HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Produkt ist nicht verfügbar
VS-4CSH02-M3/86A vs-4csh02-m3.pdf
VS-4CSH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.37 EUR
Mindestbestellmenge: 1500
VS-4ESH01HM3/86A vs-4esh01hm3.pdf
VS-4ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4ESH01-M3/86A vs-4esh01-m3.pdf
VS-4ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.35 EUR
3000+ 0.32 EUR
7500+ 0.3 EUR
10500+ 0.28 EUR
Mindestbestellmenge: 1500
VS-6CSH01-M3/86A vs-6csh01-m3.pdf
VS-6CSH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.43 EUR
Mindestbestellmenge: 1500
VS-6CSH02-M3/86A vs-6csh02-m3.pdf
VS-6CSH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HYP FAST 200V 3A TO277A
Produkt ist nicht verfügbar
VS-6ESH01HM3/86A vs-6esh01hm3.pdf
VS-6ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.54 EUR
Mindestbestellmenge: 1500
VS-6ESH01-M3/86A vs-6esh01-m3.pdf
VS-6ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESH06HM3/86A vs-6esh06hm3.pdf
VS-6ESH06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.57 EUR
3000+ 0.51 EUR
Mindestbestellmenge: 1500
VS-6ESH06-M3/86A vs-6esh06-m3.pdf
VS-6ESH06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESU06HM3/86A vs-6esu06hm3.pdf
VS-6ESU06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.6 EUR
Mindestbestellmenge: 1500
VS-6ESU06-M3/86A vs-6esu06-m3.pdf
VS-6ESU06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
VS-10CSH02HM3/86A vs-10csh02hm3.pdf
VS-10CSH02HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.11 EUR
100+ 0.87 EUR
500+ 0.73 EUR
Mindestbestellmenge: 13
VS-4CSH01HM3/86A vs-4csh01hm3.pdf
VS-4CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4CSH02HM3/86A vs-4csh02hm3.pdf
VS-4CSH02HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Produkt ist nicht verfügbar
VS-4CSH02-M3/86A vs-4csh02-m3.pdf
VS-4CSH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
22+ 0.81 EUR
100+ 0.6 EUR
500+ 0.48 EUR
Mindestbestellmenge: 19
VS-4ESH01HM3/86A vs-4esh01hm3.pdf
VS-4ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.02 EUR
100+ 0.78 EUR
500+ 0.62 EUR
Mindestbestellmenge: 16
VS-4ESH01-M3/86A vs-4esh01-m3.pdf
VS-4ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 14524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.8 EUR
100+ 0.56 EUR
500+ 0.44 EUR
Mindestbestellmenge: 19
VS-6CSH01-M3/86A vs-6csh01-m3.pdf
VS-6CSH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.51 EUR
Mindestbestellmenge: 18
VS-6CSH02-M3/86A vs-6csh02-m3.pdf
VS-6CSH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HYP FAST 200V 3A TO277A
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
18+ 1.01 EUR
Mindestbestellmenge: 16
VS-6ESH01HM3/86A vs-6esh01hm3.pdf
VS-6ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.27 EUR
17+ 1.09 EUR
100+ 0.76 EUR
500+ 0.63 EUR
Mindestbestellmenge: 14
VS-6ESH01-M3/86A vs-6esh01-m3.pdf
VS-6ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6ESH06HM3/86A vs-6esh06hm3.pdf
VS-6ESH06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.34 EUR
16+ 1.16 EUR
100+ 0.8 EUR
500+ 0.67 EUR
Mindestbestellmenge: 14
VS-6ESH06-M3/86A vs-6esh06-m3.pdf
VS-6ESH06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Produkt ist nicht verfügbar
VS-6ESU06HM3/86A vs-6esu06hm3.pdf
VS-6ESU06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.41 EUR
15+ 1.24 EUR
100+ 0.95 EUR
500+ 0.75 EUR
Mindestbestellmenge: 13
VS-6ESU06-M3/86A vs-6esu06-m3.pdf
VS-6ESU06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.94 EUR
Mindestbestellmenge: 17
SE10PJ-M3/84A se10pb.pdf
SE10PJ-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO220AA
auf Bestellung 5485 Stücke:
Lieferzeit 10-14 Tag (e)
SE15PG-M3/84A se15pj.pdf
SE15PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO220AA
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6CSH01HM3/86A vs-6csh01hm3.pdf
VS-6CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-6ESH02-M3/86A vs-6esh02-m3.pdf
VS-6ESH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
SE10DBHM3/I se10db-m3.pdf
SE10DBHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-6CSH01HM3/86A vs-6csh01hm3.pdf
VS-6CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
VS-6ESH02-M3/86A vs-6esh02-m3.pdf
VS-6ESH02-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
21+ 0.84 EUR
100+ 0.58 EUR
500+ 0.49 EUR
Mindestbestellmenge: 19
SE10DBHM3/I se10db-m3.pdf
SE10DBHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10MQ100HM3/5AT vs-10mq100hm3.pdf
VS-10MQ100HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.15 EUR
Mindestbestellmenge: 7500
VS-15MQ040HM3/5AT vs-15mq040hm3.pdf
VS-15MQ040HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.22 EUR
15000+ 0.19 EUR
52500+ 0.18 EUR
Mindestbestellmenge: 7500
VS-20MQ060HM3/5AT vs-20mq060hm3.pdf
VS-20MQ060HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 31pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
VS-MBRS140-M3/5BT vsmbrs140m3.pdf
VS-MBRS140-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3200+0.15 EUR
6400+ 0.14 EUR
9600+ 0.13 EUR
Mindestbestellmenge: 3200
VS-10BQ030-M3/5BT vs-10bq030-m3.pdf
VS-10BQ030-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 35906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
45+ 0.4 EUR
100+ 0.27 EUR
500+ 0.21 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 30
VS-30BQ060HM3/9AT vs-30bq060hm3.pdf
VS-30BQ060HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.3 EUR
7000+ 0.28 EUR
10500+ 0.27 EUR
17500+ 0.26 EUR
Mindestbestellmenge: 3500
VS-30BQ100HM3/9AT vs-30bq100hm3.pdf
VS-30BQ100HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.3 EUR
Mindestbestellmenge: 3500
V20202C-M3/4W v20202c.pdf
V20202C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 5428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.56 EUR
10+ 2.94 EUR
100+ 2.03 EUR
500+ 1.64 EUR
1000+ 1.51 EUR
2000+ 1.4 EUR
5000+ 1.36 EUR
Mindestbestellmenge: 4
V20202G-M3/4W v20202g-m3.pdf
V20202G-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VI30202C-M3/4W v30202c.pdf
VI30202C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 30A TO262AA
Produkt ist nicht verfügbar
VIT5202-M3/4W vt5202-m3.pdf
VIT5202-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 5A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VT10202C-M3/4W vt10202c.pdf
VT10202C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VT5202-M3/4W vt5202-m3.pdf
VT5202-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1216pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VBT5202-M3/8W vt5202-m3.pdf
VBT5202-M3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.17 EUR
1600+ 0.96 EUR
2400+ 0.9 EUR
5600+ 0.86 EUR
Mindestbestellmenge: 800
VBT10202C-M3/8W vt10202c.pdf
VBT10202C-M3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VS-10CSH01HM3/86A vs-10csh01hm3.pdf
VS-10CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.6 EUR
Mindestbestellmenge: 1500
VS-10CSH01-M3/86A vs-10csh01-m3.pdf
VS-10CSH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-8CSH01-M3/86A vs-8csh01-m3.pdf
VS-8CSH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.51 EUR
3000+ 0.45 EUR
Mindestbestellmenge: 1500
VBT5202-M3/8W vt5202-m3.pdf
VBT5202-M3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 9782 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.18 EUR
10+ 1.78 EUR
100+ 1.39 EUR
Mindestbestellmenge: 9
VBT10202C-M3/8W vt10202c.pdf
VBT10202C-M3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar
VS-10CSH01HM3/86A vs-10csh01hm3.pdf
VS-10CSH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.11 EUR
100+ 0.87 EUR
500+ 0.73 EUR
Mindestbestellmenge: 13
VS-10CSH01-M3/86A vs-10csh01-m3.pdf
VS-10CSH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.18 EUR
18+ 1.03 EUR
100+ 0.71 EUR
Mindestbestellmenge: 15
VS-8CSH01-M3/86A vs-8csh01-m3.pdf
VS-8CSH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 4280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.18 EUR
18+ 1.03 EUR
100+ 0.71 EUR
500+ 0.6 EUR
Mindestbestellmenge: 15
SE15PB-M3/84A se15pj.pdf
SE15PB-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO220AA
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
SE15PD-M3/84A se15pj.pdf
SE15PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO220AA
auf Bestellung 5150 Stücke:
Lieferzeit 10-14 Tag (e)
Wählen Sie Seite:   [  << Vorherige Seite ]  1 64 128 192 256 320 327 328 329 330 331 332 333 334 335 336 337 384 448 512 576 640 641  [ Nächste Seite >> ]