Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38456) > Seite 635 nach 641
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GPP20M-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 2A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 1261 Stücke: Lieferzeit 10-14 Tag (e) |
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GPP20M-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMC5K10A-M3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 10VWM 17VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 294.1A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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SMC5K10A-M3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 10VWM 17VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 294.1A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
auf Bestellung 1385 Stücke: Lieferzeit 10-14 Tag (e) |
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EGL41G-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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EGL41G-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41GHE3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41GHE3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 4989 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41G-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41G-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 7355 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41A-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41A-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 5873 Stücke: Lieferzeit 10-14 Tag (e) |
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10BQ040 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
Produkt ist nicht verfügbar |
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BZD27C160P-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 160V 800MW DO219AB Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: DO-219AB (SMF) Grade: Automotive Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 120 V Qualification: AEC-Q101 |
auf Bestellung 29800 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27C160P-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 160V 800MW DO219AB Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: DO-219AB (SMF) Grade: Automotive Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 120 V Qualification: AEC-Q101 |
auf Bestellung 29800 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27B200P-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 200V 800MW DO219AB Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 500 Ohms Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27B200P-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 200V 800MW DO219AB Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 500 Ohms Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 20597 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-183NQ100PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 180A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 4150pF @ 5V, 1MHz Current - Average Rectified (Io): 180A Supplier Device Package: D-67 HALF-PAK Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 180 A Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-18TQ035-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 18A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Current - Average Rectified (Io): 18A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V |
Produkt ist nicht verfügbar |
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VS-18TQ040-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 18A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Current - Average Rectified (Io): 18A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A Current - Reverse Leakage @ Vr: 2.5 mA @ 40 V |
Produkt ist nicht verfügbar |
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BZX384C24-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 200MW SOD323 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V Qualification: AEC-Q101 |
auf Bestellung 20947 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX384C24-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 200MW SOD323 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V Qualification: AEC-Q101 |
auf Bestellung 22447 Stücke: Lieferzeit 10-14 Tag (e) |
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V15K100C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 4.2A FLTPK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4.2A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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V15K100C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 4.2A FLTPK Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4.2A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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BZG05C8V2-M3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 1.25W DO214AC Tolerance: ±6.1% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V |
Produkt ist nicht verfügbar |
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BZG05C8V2-HM3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 1.25W DO214AC Tolerance: ±6.1% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BZG05C12-M3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 1.25W DO214AC Tolerance: ±5.42% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V |
Produkt ist nicht verfügbar |
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BZG05C12-HM3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 1.25W DO214AC Tolerance: ±5.42% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BZG05C12-E3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V |
Produkt ist nicht verfügbar |
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BZG05C12-E3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 1.25W DO214AC Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V |
Produkt ist nicht verfügbar |
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SMAJ20CA-E3/5A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 32.4VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No |
Produkt ist nicht verfügbar |
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SMAJ20CA-E3/5A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 32.4VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No |
auf Bestellung 7275 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1A-E3/5CA | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
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EGF1A-E3/5CA | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
auf Bestellung 6204 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1THE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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EGF1THE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Qualification: AEC-Q101 |
auf Bestellung 1030 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1THE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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EGF1THE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BU1510-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 15A BU Packaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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SML4749AHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 1W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BZX584C12-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER AUTO 300MW SOD523 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BZX584C12-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER AUTO 300MW SOD523 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
auf Bestellung 1641 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4728A-T | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 400 Ohms Supplier Device Package: DO-41 Grade: Automotive Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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V35PWL63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 4700pF @ 4V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 700 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 8980 Stücke: Lieferzeit 10-14 Tag (e) |
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SM8S18CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: 6600 W BI-DIRECTIONAL TVS IS DO- Packaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 226A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-218AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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SM8S18CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: 6600 W BI-DIRECTIONAL TVS IS DO- Packaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 226A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-218AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1680 Stücke: Lieferzeit 10-14 Tag (e) |
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SM8S18A-2HE3/2D | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 18VWM 29.2VC DO218AB Packaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 226A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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V10PWL63C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 4475 Stücke: Lieferzeit 10-14 Tag (e) |
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V10PWL63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2100pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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V10PWL63CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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V10PWL63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2100pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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V20PWL63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 8987 Stücke: Lieferzeit 10-14 Tag (e) |
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V20PWL63C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A Current - Reverse Leakage @ Vr: 180 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 4490 Stücke: Lieferzeit 10-14 Tag (e) |
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V20PWL63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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V20PWL63CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A Current - Reverse Leakage @ Vr: 180 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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V40PWL63C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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V35PWL63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 4700pF @ 4V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 700 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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V40PWL63CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 8900 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5239C-HE3_A-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW SOD123 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MMSZ5239C-HE3_A-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW SOD123 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
GPP20M-E3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1261 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
37+ | 0.48 EUR |
100+ | 0.24 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
GPP20M-E3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.12 EUR |
SMC5K10A-M3/H |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 294.1A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 294.1A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SMC5K10A-M3/H |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 294.1A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 294.1A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 1385 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.85 EUR |
10+ | 2.36 EUR |
100+ | 1.88 EUR |
EGL41G-E3/97 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.21 EUR |
10000+ | 0.19 EUR |
EGL41G-E3/97 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
29+ | 0.62 EUR |
100+ | 0.37 EUR |
500+ | 0.34 EUR |
1000+ | 0.23 EUR |
2000+ | 0.21 EUR |
GL41GHE3/96 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.16 EUR |
GL41GHE3/96 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 4989 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
30+ | 0.59 EUR |
100+ | 0.35 EUR |
500+ | 0.33 EUR |
GL41G-E3/97 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.15 EUR |
GL41G-E3/97 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 7355 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
27+ | 0.67 EUR |
100+ | 0.47 EUR |
500+ | 0.37 EUR |
1000+ | 0.3 EUR |
2000+ | 0.27 EUR |
GL41A-E3/96 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.15 EUR |
GL41A-E3/96 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 5873 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
27+ | 0.67 EUR |
100+ | 0.47 EUR |
500+ | 0.37 EUR |
10BQ040 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
BZD27C160P-HE3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 29800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
6000+ | 0.22 EUR |
9000+ | 0.21 EUR |
BZD27C160P-HE3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE ZENER 160V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 29800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
30+ | 0.6 EUR |
100+ | 0.42 EUR |
500+ | 0.33 EUR |
1000+ | 0.27 EUR |
BZD27B200P-M3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.12 EUR |
15000+ | 0.11 EUR |
BZD27B200P-M3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 20597 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
35+ | 0.51 EUR |
100+ | 0.26 EUR |
500+ | 0.23 EUR |
1000+ | 0.18 EUR |
VS-183NQ100PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 180 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V
Description: DIODE SCHOTTKY 100V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 180 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 45.94 EUR |
20+ | 40.82 EUR |
VS-18TQ035-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 18A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Description: DIODE SCHOTTKY 35V 18A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Produkt ist nicht verfügbar
VS-18TQ040-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 18A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 40 V
Description: DIODE SCHOTTKY 40V 18A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 36 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 40 V
Produkt ist nicht verfügbar
BZX384C24-HE3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 20947 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.062 EUR |
6000+ | 0.056 EUR |
9000+ | 0.053 EUR |
15000+ | 0.05 EUR |
BZX384C24-HE3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 22447 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
110+ | 0.16 EUR |
163+ | 0.11 EUR |
500+ | 0.082 EUR |
1000+ | 0.074 EUR |
V15K100C-M3/H |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 4.2A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 4.2A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.61 EUR |
V15K100C-M3/H |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 4.2A FLTPK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 4.2A FLTPK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.37 EUR |
16+ | 1.13 EUR |
100+ | 0.88 EUR |
500+ | 0.74 EUR |
BZG05C8V2-M3-18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±6.1%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±6.1%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Produkt ist nicht verfügbar
BZG05C8V2-HM3-18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±6.1%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±6.1%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZG05C12-M3-18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Description: DIODE ZENER 12V 1.25W DO214AC
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
BZG05C12-HM3-18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 1.25W DO214AC
Tolerance: ±5.42%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZG05C12-E3-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Description: DIODE ZENER 12V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
BZG05C12-E3-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Description: DIODE ZENER 12V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Produkt ist nicht verfügbar
SMAJ20CA-E3/5A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ20CA-E3/5A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 7275 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
EGF1A-E3/5CA |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
EGF1A-E3/5CA |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 6204 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.04 EUR |
20+ | 0.9 EUR |
100+ | 0.63 EUR |
500+ | 0.52 EUR |
1000+ | 0.44 EUR |
2000+ | 0.4 EUR |
EGF1THE3_A/H |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
EGF1THE3_A/H |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
auf Bestellung 1030 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.3 EUR |
16+ | 1.12 EUR |
100+ | 0.77 EUR |
500+ | 0.65 EUR |
EGF1THE3_A/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
EGF1THE3_A/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BU1510-M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 15A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 15A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
SML4749AHE3_A/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX584C12-HG3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER AUTO 300MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER AUTO 300MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX584C12-HG3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER AUTO 300MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER AUTO 300MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 1641 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
88+ | 0.2 EUR |
131+ | 0.13 EUR |
500+ | 0.1 EUR |
1000+ | 0.092 EUR |
1N4728A-T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V35PWL63-M3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.15 EUR |
13+ | 1.44 EUR |
100+ | 1.01 EUR |
500+ | 0.81 EUR |
1000+ | 0.75 EUR |
2000+ | 0.7 EUR |
SM8S18CAHM3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 6600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 6600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 3.09 EUR |
1500+ | 2.64 EUR |
SM8S18CAHM3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 6600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 6600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.9 EUR |
10+ | 4.55 EUR |
100+ | 3.21 EUR |
SM8S18A-2HE3/2D |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
V10PWL63C-M3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4475 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.41 EUR |
19+ | 0.94 EUR |
100+ | 0.65 EUR |
500+ | 0.51 EUR |
1000+ | 0.47 EUR |
2000+ | 0.43 EUR |
V10PWL63-M3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.51 EUR |
18+ | 1.01 EUR |
100+ | 0.7 EUR |
500+ | 0.56 EUR |
1000+ | 0.51 EUR |
2000+ | 0.47 EUR |
V10PWL63CHM3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.64 EUR |
17+ | 1.1 EUR |
100+ | 0.76 EUR |
500+ | 0.61 EUR |
1000+ | 0.56 EUR |
2000+ | 0.51 EUR |
V10PWL63HM3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.76 EUR |
15+ | 1.18 EUR |
100+ | 0.82 EUR |
500+ | 0.66 EUR |
1000+ | 0.6 EUR |
2000+ | 0.56 EUR |
V20PWL63-M3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8987 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.76 EUR |
15+ | 1.18 EUR |
100+ | 0.82 EUR |
500+ | 0.66 EUR |
1000+ | 0.6 EUR |
2000+ | 0.56 EUR |
V20PWL63C-M3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.88 EUR |
14+ | 1.26 EUR |
100+ | 0.88 EUR |
500+ | 0.71 EUR |
1000+ | 0.65 EUR |
2000+ | 0.6 EUR |
V20PWL63HM3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.06 EUR |
13+ | 1.38 EUR |
100+ | 0.96 EUR |
500+ | 0.78 EUR |
1000+ | 0.72 EUR |
2000+ | 0.66 EUR |
V20PWL63CHM3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.18 EUR |
12+ | 1.47 EUR |
100+ | 1.03 EUR |
500+ | 0.83 EUR |
1000+ | 0.77 EUR |
2000+ | 0.71 EUR |
V40PWL63C-M3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.41 EUR |
11+ | 1.63 EUR |
100+ | 1.15 EUR |
500+ | 0.93 EUR |
1000+ | 0.86 EUR |
2000+ | 0.8 EUR |
V35PWL63HM3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.5 EUR |
11+ | 1.69 EUR |
100+ | 1.19 EUR |
500+ | 0.96 EUR |
1000+ | 0.89 EUR |
2000+ | 0.83 EUR |
V40PWL63CHM3/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.82 EUR |
10+ | 1.91 EUR |
100+ | 1.35 EUR |
500+ | 1.1 EUR |
1000+ | 1.02 EUR |
2000+ | 0.95 EUR |
MMSZ5239C-HE3_A-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5239C-HE3_A-18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar