Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38063) > Seite 634 nach 635

Wählen Sie Seite:   [  << Vorherige Seite ]  1 63 126 189 252 315 378 441 504 567 629 630 631 632 633 634 635  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
MMSZ4682-G3-18 MMSZ4682-G3-18 Vishay General Semiconductor - Diodes Division mmsz4681-g_to_mmsz4717-g.pdf Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
MMSZ4682-G3-18 MMSZ4682-G3-18 Vishay General Semiconductor - Diodes Division mmsz4681-g_to_mmsz4717-g.pdf Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
auf Bestellung 9890 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
54+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
5000+ 0.074 EUR
Mindestbestellmenge: 38
MURB1620CT MURB1620CT Vishay General Semiconductor - Diodes Division MURB1620CT.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
DZ23C4V3-E3-08 DZ23C4V3-E3-08 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 4.3V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.081 EUR
6000+ 0.075 EUR
9000+ 0.062 EUR
Mindestbestellmenge: 3000
DZ23C4V3-E3-08 DZ23C4V3-E3-08 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 4.3V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
54+ 0.33 EUR
109+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.094 EUR
Mindestbestellmenge: 36
DZ23C4V7-G3-08 DZ23C4V7-G3-08 Vishay General Semiconductor - Diodes Division dz23-g_series.pdf Description: DIODE ZENER 4.7V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.095 EUR
6000+ 0.088 EUR
9000+ 0.073 EUR
Mindestbestellmenge: 3000
DZ23C4V7-G3-08 DZ23C4V7-G3-08 Vishay General Semiconductor - Diodes Division dz23-g_series.pdf Description: DIODE ZENER 4.7V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
auf Bestellung 14490 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 32
SM5S28CAHM3/I SM5S28CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 79.3A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.61 EUR
1500+ 2.24 EUR
2250+ 2.11 EUR
Mindestbestellmenge: 750
SM5S28CAHM3/I SM5S28CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 79.3A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.33 EUR
10+ 3.63 EUR
100+ 2.94 EUR
Mindestbestellmenge: 5
VS-GT100TS065N VS-GT100TS065N Vishay General Semiconductor - Diodes Division vs-gt100ts065n.pdf Description: MODULES IGBT - IAP IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK IGBT
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 259 W
Current - Collector Cutoff (Max): 50 µA
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+97.54 EUR
10+ 88.01 EUR
P6SMB350AHM3_D/I P6SMB350AHM3_D/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,350V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.24A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6SMB350AHM3_D/H P6SMB350AHM3_D/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,350V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.24A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SL02-M-18 SL02-M-18 Vishay General Semiconductor - Diodes Division sl02m.pdf Description: DIODE SCHOTTKY 20V 1.1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Current - Average Rectified (Io): 1.1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.15 EUR
Mindestbestellmenge: 10000
SL02-M-18 SL02-M-18 Vishay General Semiconductor - Diodes Division sl02m.pdf Description: DIODE SCHOTTKY 20V 1.1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Current - Average Rectified (Io): 1.1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
auf Bestellung 48063 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
47+ 0.38 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 36
SMAJ54AHM3_A/I SMAJ54AHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STPS20L15D STPS20L15D Vishay General Semiconductor - Diodes Division STPS20L15D.pdf description Description: DIODE SCHOTTKY 15V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 19 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar
MMSZ5263B-HE3_A-18 MMSZ5263B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 56V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5263B-HE3_A-08 MMSZ5263B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 56V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C8V2P-HE3-08 BZD27C8V2P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
BZD27C8V2P-HE3-08 BZD27C8V2P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 29022 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
32+ 0.55 EUR
100+ 0.38 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 28
BZM55C8V2-TR3 BZM55C8V2-TR3 Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 8.2V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.055 EUR
Mindestbestellmenge: 10000
BZM55C8V2-TR3 BZM55C8V2-TR3 Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 8.2V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Qualification: AEC-Q101
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
60+ 0.29 EUR
123+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.072 EUR
5000+ 0.067 EUR
Mindestbestellmenge: 42
TLZ6V8B-GS18 TLZ6V8B-GS18 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Produkt ist nicht verfügbar
TLZ6V8B-GS18 TLZ6V8B-GS18 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 9955 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
66+ 0.27 EUR
135+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
2000+ 0.066 EUR
5000+ 0.061 EUR
Mindestbestellmenge: 46
DZ23C24-HE3_A-18 DZ23C24-HE3_A-18 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 24V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DZ23C24-HE3_A-08 DZ23C24-HE3_A-08 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 24V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX84B3V6-HE3_A-18 BZX84B3V6-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 3.6V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX84B3V6-HE3_A-08 BZX84B3V6-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 3.6V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
AS1FDHM3/H AS1FDHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 11645 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
39+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
AS1FJHM3/H AS1FJHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 17850 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
39+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
AS1FKHM3/H AS1FKHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
37+ 0.48 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 29
AS1FJ-M3/H AS1FJ-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 26
AS1FD-M3/H AS1FD-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 16100 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 26
AS1FK-M3/H AS1FK-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 25
AS1PDHM3/84A AS1PDHM3/84A Vishay General Semiconductor - Diodes Division as1pm.pdf Description: DIODE AVAL 200V 1.5A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
AS1PDHM3/84A AS1PDHM3/84A Vishay General Semiconductor - Diodes Division as1pm.pdf Description: DIODE AVAL 200V 1.5A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
16+ 1.14 EUR
100+ 0.79 EUR
500+ 0.66 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 14
5KP170AHE3_A/C 5KP170AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
5KP170AHE3/51 Vishay General Semiconductor - Diodes Division Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-3EJH02HM3/6B VS-3EJH02HM3/6B Vishay General Semiconductor - Diodes Division vs-3ejh02hm3.pdf Description: DIODE GEN PURP 200V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 200V
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-3EJH02HM3/6B VS-3EJH02HM3/6B Vishay General Semiconductor - Diodes Division vs-3ejh02hm3.pdf Description: DIODE GEN PURP 200V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 200V
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 7975 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+ 0.72 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
2000+ 0.28 EUR
5000+ 0.27 EUR
Mindestbestellmenge: 21
BZT52B5V6-G3-08 BZT52B5V6-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g_series.pdf Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.066 EUR
6000+ 0.062 EUR
9000+ 0.053 EUR
Mindestbestellmenge: 3000
BZT52B5V6-G3-08 BZT52B5V6-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g_series.pdf Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 14683 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 32
BZT52B5V6-HE3_A-08 BZT52B5V6-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZT52B5V6-HE3_A-18 BZT52B5V6-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S1FLD-GS08 S1FLD-GS08 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GP 200V 700MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.096 EUR
6000+ 0.092 EUR
9000+ 0.079 EUR
Mindestbestellmenge: 3000
S1FLD-GS08 S1FLD-GS08 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GP 200V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 27296 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
48+ 0.37 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 33
SMB8J5.0CAHM3_B/H SMB8J5.0CAHM3_B/H Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: 800W,5.0V 5%,BIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3_B/I SMB8J5.0CAHM3_B/I Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: 800W,5.0V 5%,BIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3_A/H SMB8J5.0CAHM3_A/H Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3_A/I SMB8J5.0CAHM3_A/I Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3/H SMB8J5.0CAHM3/H Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3/I SMB8J5.0CAHM3/I Vishay General Semiconductor - Diodes Division smb10j5.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMA6F40A-M3/H SMA6F40A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,40V 5%,UNIDIR,SLIM SMA TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.15 EUR
Mindestbestellmenge: 3500
SMA6F40A-M3/H SMA6F40A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,40V 5%,UNIDIR,SLIM SMA TVS
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 9210 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
41+ 0.43 EUR
100+ 0.26 EUR
500+ 0.24 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 33
MBRB20100CT MBRB20100CT Vishay General Semiconductor - Diodes Division MBR%28B%2920.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
SS3P4HM3/85A SS3P4HM3/85A Vishay General Semiconductor - Diodes Division ss3p3.pdf Description: DIODE SCHOTTKY 40V 3A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.19 EUR
Mindestbestellmenge: 10000
SS3P4HM3/85A SS3P4HM3/85A Vishay General Semiconductor - Diodes Division ss3p3.pdf Description: DIODE SCHOTTKY 40V 3A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
29+ 0.62 EUR
100+ 0.37 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 23
TZM5266C-GS08 TZM5266C-GS08 Vishay General Semiconductor - Diodes Division tzq5221b.pdf Description: DIODE ZENER 68V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
Produkt ist nicht verfügbar
TZM5266C-GS18 TZM5266C-GS18 Vishay General Semiconductor - Diodes Division tzq5221b.pdf Description: DIODE ZENER 68V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
Produkt ist nicht verfügbar
RGP02-20E-E3/54 RGP02-20E-E3/54 Vishay General Semiconductor - Diodes Division rgp02.pdf Description: DIODE GEN PURP 2KV 500MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
5500+0.32 EUR
11000+ 0.3 EUR
27500+ 0.29 EUR
Mindestbestellmenge: 5500
MMSZ4682-G3-18 mmsz4681-g_to_mmsz4717-g.pdf
MMSZ4682-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
MMSZ4682-G3-18 mmsz4681-g_to_mmsz4717-g.pdf
MMSZ4682-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
auf Bestellung 9890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
54+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
5000+ 0.074 EUR
Mindestbestellmenge: 38
MURB1620CT MURB1620CT.pdf
MURB1620CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
DZ23C4V3-E3-08 dz23_series.pdf
DZ23C4V3-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.081 EUR
6000+ 0.075 EUR
9000+ 0.062 EUR
Mindestbestellmenge: 3000
DZ23C4V3-E3-08 dz23_series.pdf
DZ23C4V3-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
54+ 0.33 EUR
109+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.094 EUR
Mindestbestellmenge: 36
DZ23C4V7-G3-08 dz23-g_series.pdf
DZ23C4V7-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.095 EUR
6000+ 0.088 EUR
9000+ 0.073 EUR
Mindestbestellmenge: 3000
DZ23C4V7-G3-08 dz23-g_series.pdf
DZ23C4V7-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
auf Bestellung 14490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 32
SM5S28CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S28CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 79.3A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
750+2.61 EUR
1500+ 2.24 EUR
2250+ 2.11 EUR
Mindestbestellmenge: 750
SM5S28CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S28CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 79.3A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.33 EUR
10+ 3.63 EUR
100+ 2.94 EUR
Mindestbestellmenge: 5
VS-GT100TS065N vs-gt100ts065n.pdf
VS-GT100TS065N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - IAP IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK IGBT
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 259 W
Current - Collector Cutoff (Max): 50 µA
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+97.54 EUR
10+ 88.01 EUR
P6SMB350AHM3_D/I p6smb.pdf
P6SMB350AHM3_D/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,350V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.24A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6SMB350AHM3_D/H p6smb.pdf
P6SMB350AHM3_D/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,350V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.24A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SL02-M-18 sl02m.pdf
SL02-M-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1.1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Current - Average Rectified (Io): 1.1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.15 EUR
Mindestbestellmenge: 10000
SL02-M-18 sl02m.pdf
SL02-M-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1.1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Current - Average Rectified (Io): 1.1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
auf Bestellung 48063 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
47+ 0.38 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 36
SMAJ54AHM3_A/I smaj50a.pdf
SMAJ54AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STPS20L15D description STPS20L15D.pdf
STPS20L15D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 19 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar
MMSZ5263B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5263B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSZ5263B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5263B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C8V2P-HE3-08 bzd27series.pdf
BZD27C8V2P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.18 EUR
Mindestbestellmenge: 3000
BZD27C8V2P-HE3-08 bzd27series.pdf
BZD27C8V2P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 29022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
32+ 0.55 EUR
100+ 0.38 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 28
BZM55C8V2-TR3 bzm55.pdf
BZM55C8V2-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.055 EUR
Mindestbestellmenge: 10000
BZM55C8V2-TR3 bzm55.pdf
BZM55C8V2-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Qualification: AEC-Q101
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
60+ 0.29 EUR
123+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.072 EUR
5000+ 0.067 EUR
Mindestbestellmenge: 42
TLZ6V8B-GS18 tlz.pdf
TLZ6V8B-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Produkt ist nicht verfügbar
TLZ6V8B-GS18 tlz.pdf
TLZ6V8B-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 9955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
66+ 0.27 EUR
135+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
2000+ 0.066 EUR
5000+ 0.061 EUR
Mindestbestellmenge: 46
DZ23C24-HE3_A-18 dz23_series.pdf
DZ23C24-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DZ23C24-HE3_A-08 dz23_series.pdf
DZ23C24-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX84B3V6-HE3_A-18 bzx84_series.pdf
BZX84B3V6-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX84B3V6-HE3_A-08 bzx84_series.pdf
BZX84B3V6-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
AS1FDHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FDHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 11645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
39+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
AS1FJHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FJHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 17850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
39+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
AS1FKHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FKHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
37+ 0.48 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 29
AS1FJ-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FJ-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 26
AS1FD-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 16100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 26
AS1FK-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FK-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 25
AS1PDHM3/84A as1pm.pdf
AS1PDHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
AS1PDHM3/84A as1pm.pdf
AS1PDHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.32 EUR
16+ 1.14 EUR
100+ 0.79 EUR
500+ 0.66 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 14
5KP170AHE3_A/C 5kp8_5a.pdf
5KP170AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
5KP170AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-3EJH02HM3/6B vs-3ejh02hm3.pdf
VS-3EJH02HM3/6B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 200V
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-3EJH02HM3/6B vs-3ejh02hm3.pdf
VS-3EJH02HM3/6B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 200V
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 7975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.72 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
2000+ 0.28 EUR
5000+ 0.27 EUR
Mindestbestellmenge: 21
BZT52B5V6-G3-08 bzt52-g_series.pdf
BZT52B5V6-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.066 EUR
6000+ 0.062 EUR
9000+ 0.053 EUR
Mindestbestellmenge: 3000
BZT52B5V6-G3-08 bzt52-g_series.pdf
BZT52B5V6-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 14683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 32
BZT52B5V6-HE3_A-08 bzt52_series.pdf
BZT52B5V6-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZT52B5V6-HE3_A-18 bzt52_series.pdf
BZT52B5V6-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
S1FLD-GS08 s1flbdgjkm.pdf
S1FLD-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 700MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.096 EUR
6000+ 0.092 EUR
9000+ 0.079 EUR
Mindestbestellmenge: 3000
S1FLD-GS08 s1flbdgjkm.pdf
S1FLD-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 27296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
48+ 0.37 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 33
SMB8J5.0CAHM3_B/H smb10j5.pdf
SMB8J5.0CAHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 800W,5.0V 5%,BIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3_B/I smb10j5.pdf
SMB8J5.0CAHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 800W,5.0V 5%,BIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3_A/H smb10j5.pdf
SMB8J5.0CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3_A/I smb10j5.pdf
SMB8J5.0CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3/H smb10j5.pdf
SMB8J5.0CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMB8J5.0CAHM3/I smb10j5.pdf
SMB8J5.0CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 87A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 800W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMA6F40A-M3/H sma6f5.pdf
SMA6F40A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,40V 5%,UNIDIR,SLIM SMA TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.15 EUR
Mindestbestellmenge: 3500
SMA6F40A-M3/H sma6f5.pdf
SMA6F40A-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,40V 5%,UNIDIR,SLIM SMA TVS
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 9210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
41+ 0.43 EUR
100+ 0.26 EUR
500+ 0.24 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 33
MBRB20100CT MBR%28B%2920.pdf
MBRB20100CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
SS3P4HM3/85A ss3p3.pdf
SS3P4HM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.19 EUR
Mindestbestellmenge: 10000
SS3P4HM3/85A ss3p3.pdf
SS3P4HM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
29+ 0.62 EUR
100+ 0.37 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 23
TZM5266C-GS08 tzq5221b.pdf
TZM5266C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
Produkt ist nicht verfügbar
TZM5266C-GS18 tzq5221b.pdf
TZM5266C-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
Produkt ist nicht verfügbar
RGP02-20E-E3/54 rgp02.pdf
RGP02-20E-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 500MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5500+0.32 EUR
11000+ 0.3 EUR
27500+ 0.29 EUR
Mindestbestellmenge: 5500
Wählen Sie Seite:   [  << Vorherige Seite ]  1 63 126 189 252 315 378 441 504 567 629 630 631 632 633 634 635  [ Nächste Seite >> ]