Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38063) > Seite 315 nach 635
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VS-VSKU41/16 | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 45A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3 + 4) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Common Cathode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 45 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 70 A Voltage - Off State: 1.6 kV |
Produkt ist nicht verfügbar |
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VS-VSKV105/12 | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 105A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3 + 4) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Common Anode - All SCRs Current - Hold (Ih) (Max): 250 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 105 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 165 A Voltage - Off State: 1.2 kV |
Produkt ist nicht verfügbar |
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VS-VSKV230-08PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 230A MAGN-A-PAK Packaging: Bulk Package / Case: MAGN-A-PAK Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Common Anode - All SCRs Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 230 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - On State (It (RMS)) (Max): 510 A Voltage - Off State: 800 V |
Produkt ist nicht verfügbar |
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VS-VSKV250-04PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 250A MAGN-A-PAK Packaging: Bulk Package / Case: MAGN-A-PAK Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Common Anode - All SCRs Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 250 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - On State (It (RMS)) (Max): 555 A Voltage - Off State: 400 V |
Produkt ist nicht verfügbar |
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VS-VSKV250-08PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 250A MAGN-A-PAK Packaging: Bulk Package / Case: MAGN-A-PAK Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Common Anode - All SCRs Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 250 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - On State (It (RMS)) (Max): 555 A Voltage - Off State: 800 V |
Produkt ist nicht verfügbar |
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VS-VSKV250-12PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 250A MAGN-A-PAK Packaging: Bulk Package / Case: MAGN-A-PAK Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Common Anode - All SCRs Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 250 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - On State (It (RMS)) (Max): 555 A Voltage - Off State: 1.2 kV |
Produkt ist nicht verfügbar |
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VS-VSKV26/04 | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 27A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3 + 4) Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar |
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VS-VSKV26/06 | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 27A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3 + 4) Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar |
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VS-VSKV26/08 | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 27A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3 + 4) Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar |
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VS-VSKV26/10 | Vishay General Semiconductor - Diodes Division | Description: MODULE THYRISTOR 27A ADD-A-PAK |
Produkt ist nicht verfügbar |
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VS-VSKV26/12 | Vishay General Semiconductor - Diodes Division | Description: MODULE THYRISTOR 27A ADD-A-PAK |
Produkt ist nicht verfügbar |
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VS-VSKV26/14 | Vishay General Semiconductor - Diodes Division | Description: MODULE THYRISTOR 27A ADD-A-PAK |
Produkt ist nicht verfügbar |
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VS-VSKV26/16 | Vishay General Semiconductor - Diodes Division | Description: MODULE THYRISTOR 27A ADD-A-PAK |
Produkt ist nicht verfügbar |
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VS-VSKV41/12 | Vishay General Semiconductor - Diodes Division |
Description: MODULE THYRISTOR 45A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3 + 4) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Common Cathode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 45 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 70 A Voltage - Off State: 1.2 kV |
Produkt ist nicht verfügbar |
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VS-VSKV71/10 | Vishay General Semiconductor - Diodes Division | Description: MODULE THYRISTOR 75A ADD-A-PAK |
Produkt ist nicht verfügbar |
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VS-VSMD400AW60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 200A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244AB Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 200 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-VSMD400CW60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 200A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244AB Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 200 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-VSUD200CH20PBF | Vishay General Semiconductor - Diodes Division | Description: MODULE DIODE 200A HALFPAK |
Produkt ist nicht verfügbar |
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VS-VSUD200CH40PBF | Vishay General Semiconductor - Diodes Division | Description: MODULE DIODE 200A HALFPAK |
Produkt ist nicht verfügbar |
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VS-VSUD200CH60PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 600V 200A TO244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A Current - Reverse Leakage @ Vr: 1.38 mA @ 600 V |
Produkt ist nicht verfügbar |
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VS-VSUD360CW40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 400V 510A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Reverse Recovery Time (trr): 74 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 510A Supplier Device Package: TO-244AB Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 360 A Current - Reverse Leakage @ Vr: 1.28 mA @ 400 V |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-VSUD400CW20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 200V 330A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 330A Supplier Device Package: TO-244AB Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A Current - Reverse Leakage @ Vr: 1.38 mA @ 200 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-VSUD400CW60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 330A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 330A Supplier Device Package: TO-244AB Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A Current - Reverse Leakage @ Vr: 1.38 mA @ 200 V |
Produkt ist nicht verfügbar |
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VS-VSUD410CW60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 572A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 215 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 572A Supplier Device Package: TO-244AB Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 400 A Current - Reverse Leakage @ Vr: 3 mA @ 600 V |
Produkt ist nicht verfügbar |
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VS-21DQ04TB | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
Produkt ist nicht verfügbar |
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VS-21DQ06TB | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 4 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
Produkt ist nicht verfügbar |
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VSB1045-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 7A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1995pF @ 4V, 1MHz Current - Average Rectified (Io): 7A Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
Produkt ist nicht verfügbar |
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VSB1545-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 6A P600 Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1290pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 45 V |
Produkt ist nicht verfügbar |
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VSB1545S-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 7A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1995pF @ 4V, 1MHz Current - Average Rectified (Io): 7A Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
Produkt ist nicht verfügbar |
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VSB15L45-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 7A P600 Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1430pF @ 4V, 1MHz Current - Average Rectified (Io): 7A Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 4 mA @ 45 V |
Produkt ist nicht verfügbar |
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VSB2045-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 6.5A P600 Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2050pF @ 4V, 1MHz Current - Average Rectified (Io): 6.5A Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V |
Produkt ist nicht verfügbar |
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VSB2045Y-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 6.5A P600 Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2050pF @ 4V, 1MHz Current - Average Rectified (Io): 6.5A Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V |
Produkt ist nicht verfügbar |
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VSB20L45-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 6.5A P600 Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2050pF @ 4V, 1MHz Current - Average Rectified (Io): 6.5A Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V |
Produkt ist nicht verfügbar |
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VSB2200S-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 2A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A Current - Reverse Leakage @ Vr: 40 µA @ 200 V |
Produkt ist nicht verfügbar |
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VSB3200-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 175pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 60 µA @ 200 V |
Produkt ist nicht verfügbar |
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VSB3200S-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 3A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
Produkt ist nicht verfügbar |
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Z4KE130A-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 130V 1.5W DO204AL Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 130 V Impedance (Max) (Zzt): 800 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 500 nA @ 99.2 V |
Produkt ist nicht verfügbar |
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ZPY100-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 100V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 75 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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ZPY10-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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ZPY11-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 11V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 8.5 V |
Produkt ist nicht verfügbar |
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ZPY16-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 12 V |
Produkt ist nicht verfügbar |
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ZPY18-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 14 V Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZPY22-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 17 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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ZPY24-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 18 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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ZPY36-TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 36V 1.3W DO41 |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZPY4V7-TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 1.3W DO41 |
Produkt ist nicht verfügbar |
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ZPY51-TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 51V 1.3W DO41 |
Produkt ist nicht verfügbar |
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ZPY68-TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 68V 1.3W DO41 |
Produkt ist nicht verfügbar |
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ZPY7V5-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 5 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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ZPY82-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 82V 1.3W DO41 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-10BQ040-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 115pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
auf Bestellung 16865 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10BQ060-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
auf Bestellung 12800 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10BQ100-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
auf Bestellung 41600 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10CTQ150STRLPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 5A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-10CTQ150STRRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 5A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-10CWH02FNTRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-10ETF02STRLPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-10ETF02STRRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-10ETF10STRLPBF | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 10A TO263AB |
Produkt ist nicht verfügbar |
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VS-10ETF10STRRPBF | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 10A TO263AB |
Produkt ist nicht verfügbar |
VS-VSKU41/16 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 45A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 45 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 70 A
Voltage - Off State: 1.6 kV
Description: MODULE THYRISTOR 45A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 45 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 70 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
VS-VSKV105/12 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 105A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 105 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 165 A
Voltage - Off State: 1.2 kV
Description: MODULE THYRISTOR 105A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 105 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 165 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
VS-VSKV230-08PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 800 V
Description: MODULE THYRISTOR 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
VS-VSKV250-04PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 250A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 555 A
Voltage - Off State: 400 V
Description: MODULE THYRISTOR 250A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 555 A
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
VS-VSKV250-08PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 250A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 555 A
Voltage - Off State: 800 V
Description: MODULE THYRISTOR 250A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 555 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
VS-VSKV250-12PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 250A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 555 A
Voltage - Off State: 1.2 kV
Description: MODULE THYRISTOR 250A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 555 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
VS-VSKV26/04 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 27A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Description: MODULE THYRISTOR 27A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
VS-VSKV26/06 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 27A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Description: MODULE THYRISTOR 27A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
VS-VSKV26/08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 27A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Description: MODULE THYRISTOR 27A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
VS-VSKV26/10 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 27A ADD-A-PAK
Description: MODULE THYRISTOR 27A ADD-A-PAK
Produkt ist nicht verfügbar
VS-VSKV26/12 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 27A ADD-A-PAK
Description: MODULE THYRISTOR 27A ADD-A-PAK
Produkt ist nicht verfügbar
VS-VSKV26/14 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 27A ADD-A-PAK
Description: MODULE THYRISTOR 27A ADD-A-PAK
Produkt ist nicht verfügbar
VS-VSKV26/16 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 27A ADD-A-PAK
Description: MODULE THYRISTOR 27A ADD-A-PAK
Produkt ist nicht verfügbar
VS-VSKV41/12 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 45A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 45 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 70 A
Voltage - Off State: 1.2 kV
Description: MODULE THYRISTOR 45A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 45 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 70 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
VS-VSKV71/10 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 75A ADD-A-PAK
Description: MODULE THYRISTOR 75A ADD-A-PAK
Produkt ist nicht verfügbar
VS-VSMD400AW60 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 200A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE MOD GP 600V 200A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
VS-VSMD400CW60 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 200A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE MOD GP 600V 200A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
VS-VSUD200CH20PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 200A HALFPAK
Description: MODULE DIODE 200A HALFPAK
Produkt ist nicht verfügbar
VS-VSUD200CH40PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 200A HALFPAK
Description: MODULE DIODE 200A HALFPAK
Produkt ist nicht verfügbar
VS-VSUD200CH60PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 1.38 mA @ 600 V
Description: DIODE MODULE GP 600V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 1.38 mA @ 600 V
Produkt ist nicht verfügbar
VS-VSUD360CW40 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 400V 510A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): 74 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 510A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 360 A
Current - Reverse Leakage @ Vr: 1.28 mA @ 400 V
Description: DIODE MOD GP 400V 510A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): 74 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 510A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 360 A
Current - Reverse Leakage @ Vr: 1.28 mA @ 400 V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 76.23 EUR |
10+ | 67.91 EUR |
100+ | 59.61 EUR |
VS-VSUD400CW20 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 200V 330A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 1.38 mA @ 200 V
Description: DIODE MOD GP 200V 330A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 1.38 mA @ 200 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 89.57 EUR |
10+ | 81.42 EUR |
VS-VSUD400CW60 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 330A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 1.38 mA @ 200 V
Description: DIODE MOD GP 600V 330A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 1.38 mA @ 200 V
Produkt ist nicht verfügbar
VS-VSUD410CW60 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 572A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 572A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 400 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Description: DIODE MOD GP 600V 572A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 572A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 400 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Produkt ist nicht verfügbar
VS-21DQ04TB |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
VS-21DQ06TB |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 4 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 4 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
VSB1045-E3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1995pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY 45V 7A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1995pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
VSB1545-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Description: DIODE SCHOTTKY 45V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Produkt ist nicht verfügbar
VSB1545S-E3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1995pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY 45V 7A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1995pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
VSB15L45-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1430pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
Description: DIODE SCHOTTKY 45V 7A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1430pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
Produkt ist nicht verfügbar
VSB2045-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.5A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.5A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Description: DIODE SCHOTTKY 45V 6.5A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.5A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
VSB2045Y-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.5A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.5A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Description: DIODE SCHOTTKY 45V 6.5A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.5A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
VSB20L45-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.5A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.5A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Description: DIODE SCHOTTKY 45V 6.5A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Current - Average Rectified (Io): 6.5A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
VSB2200S-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Description: DIODE SCHOTTKY 200V 2A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Produkt ist nicht verfügbar
VSB3200-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
Produkt ist nicht verfügbar
VSB3200S-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
Z4KE130A-E3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 130V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 99.2 V
Description: DIODE ZENER 130V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 99.2 V
Produkt ist nicht verfügbar
ZPY100-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: AEC-Q101
Description: DIODE ZENER 100V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZPY10-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZPY11-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 8.5 V
Description: DIODE ZENER 11V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 8.5 V
Produkt ist nicht verfügbar
ZPY16-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
Description: DIODE ZENER 16V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
Produkt ist nicht verfügbar
ZPY18-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.069 EUR |
10000+ | 0.065 EUR |
ZPY22-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 17 V
Qualification: AEC-Q101
Description: DIODE ZENER 22V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 17 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZPY24-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 18 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 18 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZPY36-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1.3W DO41
Description: DIODE ZENER 36V 1.3W DO41
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)ZPY4V7-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 1.3W DO41
Description: DIODE ZENER 4.7V 1.3W DO41
Produkt ist nicht verfügbar
ZPY51-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 1.3W DO41
Description: DIODE ZENER 51V 1.3W DO41
Produkt ist nicht verfügbar
ZPY68-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 1.3W DO41
Description: DIODE ZENER 68V 1.3W DO41
Produkt ist nicht verfügbar
ZPY7V5-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZPY82-TAP |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 82V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10BQ040-M3/5BT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 16865 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3200+ | 0.17 EUR |
6400+ | 0.16 EUR |
9600+ | 0.15 EUR |
VS-10BQ060-M3/5BT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 12800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3200+ | 0.17 EUR |
9600+ | 0.15 EUR |
VS-10BQ100-M3/5BT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 41600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3200+ | 0.18 EUR |
9600+ | 0.16 EUR |
VS-10CTQ150STRLPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10CTQ150STRRPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10CWH02FNTRR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Produkt ist nicht verfügbar
VS-10ETF02STRLPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
VS-10ETF02STRRPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
VS-10ETF10STRLPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Description: DIODE GEN PURP 1KV 10A TO263AB
Produkt ist nicht verfügbar
VS-10ETF10STRRPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Description: DIODE GEN PURP 1KV 10A TO263AB
Produkt ist nicht verfügbar