Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (167162) > Seite 1215 nach 2787

Wählen Sie Seite:   [  << Vorherige Seite ]  1 278 556 834 1112 1210 1211 1212 1213 1214 1215 1216 1217 1218 1219 1220 1390 1668 1946 2224 2502 2780 2787  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
STW15NK50Z STW15NK50Z STMicroelectronics STP15NK50ZFP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 209 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.4 EUR
35+ 2.09 EUR
37+ 1.97 EUR
Mindestbestellmenge: 22
STW15NK90Z STW15NK90Z STMicroelectronics STW15NK90Z-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.31 EUR
18+ 3.98 EUR
Mindestbestellmenge: 10
STW18N60DM2 STW18N60DM2 STMicroelectronics STW18N60DM2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW18N60M2 STW18N60M2 STMicroelectronics STx18N60M2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 255mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW18N65M5 STMicroelectronics stw18n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 9.4A; Idm: 60A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW18NM60N STMicroelectronics stw18nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Pulsed drain current: 52A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW18NM80 STW18NM80 STMicroelectronics STx18NM80-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.71A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.71A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW19NM60N STMicroelectronics stw19nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.2A; Idm: 52A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20N90K5 STMicroelectronics stw20n90k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20N95DK5 STMicroelectronics stw20n90k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 50.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20N95K5 STW20N95K5 STMicroelectronics STx20N95K5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20NK50Z STW20NK50Z STMicroelectronics STW20NK50Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1275 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.58 EUR
33+ 2.22 EUR
35+ 2.09 EUR
Mindestbestellmenge: 20
STW20NM50FD STW20NM50FD STMicroelectronics STW20NM50FD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20NM60 STW20NM60 STMicroelectronics STx20NM60x-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; 192W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 192W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.62 EUR
24+ 3.05 EUR
25+ 2.89 EUR
Mindestbestellmenge: 16
STW20NM60FD STW20NM60FD STMicroelectronics STx20NM60xD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW21N150K5 STW21N150K5 STMicroelectronics STW21N150K5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 8.7A; 446W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8.7A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
4+22.55 EUR
5+ 15 EUR
Mindestbestellmenge: 4
STW21N90K5 STW21N90K5 STMicroelectronics STx21N90K5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 900V; 11.6A; 250W
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: SuperMESH5™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
6+ 11.91 EUR
10+ 7.84 EUR
Mindestbestellmenge: 4
STW21NM60ND STW21NM60ND STMicroelectronics STx21NM60ND-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 10A; 140W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW22N95K5 STMicroelectronics en.DM00092786.pdf STW22N95K5 THT N channel transistors
Produkt ist nicht verfügbar
STW23N80K5 STMicroelectronics stw23n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 64A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW23N85K5 STMicroelectronics stw23n85k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 850V; 12.4A; Idm: 250A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 12.4A
Pulsed drain current: 250A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW24N60M2 STW24N60M2 STMicroelectronics STx24N60M2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW24N60M6 STMicroelectronics stw24n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 52.5A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.7A
Pulsed drain current: 52.5A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 162mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW24NM60N STW24NM60N STMicroelectronics STx24NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW25N60M2-EP STMicroelectronics stw25n60m2-ep.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.3A
Pulsed drain current: 72A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW25N80K5 STW25N80K5 STMicroelectronics STx25N80K5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 12.3A; 250W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12.3A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW26N65DM2 STMicroelectronics stw26n65dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW26NM50 STW26NM50 STMicroelectronics STW26NM50-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Kind of package: tube
Drain-source voltage: 500V
Drain current: 18.9A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Technology: MDmesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.14 EUR
15+ 5.03 EUR
16+ 4.76 EUR
Mindestbestellmenge: 9
STW26NM60N STW26NM60N STMicroelectronics STW26NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.55 EUR
16+ 4.55 EUR
17+ 4.3 EUR
Mindestbestellmenge: 9
STW27N60M2-EP STMicroelectronics stw27n60m2-ep.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 80A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW28N60DM2 STMicroelectronics stw28n60dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW28N60M2 STW28N60M2 STMicroelectronics STx28N60M2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.03 EUR
24+ 3.07 EUR
25+ 2.9 EUR
60+ 2.85 EUR
120+ 2.79 EUR
Mindestbestellmenge: 18
STW28N65M2 STW28N65M2 STMicroelectronics stw28n65m2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.22 EUR
16+ 4.7 EUR
20+ 3.62 EUR
21+ 3.42 EUR
Mindestbestellmenge: 14
STW28NM50N STW28NM50N STMicroelectronics STx28NM50N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.92 EUR
21+ 3.52 EUR
27+ 2.75 EUR
28+ 2.6 EUR
Mindestbestellmenge: 19
STW30N65M5 STMicroelectronics stw30n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.39 EUR
15+ 4.78 EUR
510+ 4.56 EUR
Mindestbestellmenge: 10
STW30N80K5 STW30N80K5 STMicroelectronics stw30n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 96A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.44 EUR
9+ 8.19 EUR
10+ 7.75 EUR
600+ 7.45 EUR
Mindestbestellmenge: 7
STW31N65M5 STW31N65M5 STMicroelectronics STW31N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW32NM50N STMicroelectronics stw32nm50n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW33N60DM2 STW33N60DM2 STMicroelectronics stw33n60dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.42 EUR
11+ 6.51 EUR
100+ 5.31 EUR
Mindestbestellmenge: 10
STW33N60M6 STW33N60M6 STMicroelectronics stw33n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW34N65M5 STW34N65M5 STMicroelectronics STx34N65M5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 17.7A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.7A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW34NM60N STW34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 392 Stücke:
Lieferzeit 7-14 Tag (e)
8+10.05 EUR
16+ 4.58 EUR
17+ 4.32 EUR
Mindestbestellmenge: 8
STW34NM60ND STW34NM60ND STMicroelectronics STx34NM60ND-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW35N60DM2 STW35N60DM2 STMicroelectronics STW35N60DM2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW35N65DM2 STMicroelectronics stw35n65dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW36N60M6 STW36N60M6 STMicroelectronics stw36n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW37N60DM2AG STMicroelectronics stw37n60dm2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW38N65M5 STW38N65M5 STMicroelectronics STx38N65M5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 19A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW38N65M5-4 STMicroelectronics stw38n65m5-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW3N150 STW3N150 STMicroelectronics STP3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 101 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.56 EUR
17+ 4.26 EUR
18+ 4.03 EUR
60+ 4 EUR
120+ 3.88 EUR
Mindestbestellmenge: 13
STW3N170 STMicroelectronics stw3n170.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1.6A
Pulsed drain current: 10.4A
Power dissipation: 0.16W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW40N60M2-4 STMicroelectronics stw40n60m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW40N65M2 STMicroelectronics stw40n65m2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 87mΩ
Mounting: THT
Gate charge: 56.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW40N90K5 STW40N90K5 STMicroelectronics en.DM00265509.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A
Mounting: THT
Case: TO247
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Technology: MDmesh™ K5
Power dissipation: 446W
Pulsed drain current: 160A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 25A
On-state resistance: 99mΩ
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.5 EUR
Mindestbestellmenge: 5
STW40N95DK5 STMicroelectronics en.DM00094303.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 24A; Idm: 152A; 450W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Kind of channel: enhanced
Power dissipation: 450W
Pulsed drain current: 152A
Gate-source voltage: ±30V
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 24A
On-state resistance: 120mΩ
Gate charge: 100nC
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
STW40N95K5 STW40N95K5 STMicroelectronics en.DM00119299.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 24A; 450W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Technology: MDmesh™ K5
Power dissipation: 450W
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 950V
Drain current: 24A
On-state resistance: 110mΩ
Produkt ist nicht verfügbar
STW40NF20 STW40NF20 STMicroelectronics STx40NF20-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO247
Mounting: THT
Technology: STripFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: tube
Polarisation: unipolar
Power dissipation: 160W
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Drain current: 25A
Drain-source voltage: 200V
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.65 EUR
18+ 4.1 EUR
20+ 3.58 EUR
Mindestbestellmenge: 16
STW42N60M2-EP STW42N60M2-EP STMicroelectronics STx42N60M2-EP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2-EP; unipolar; 600V; 22A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2-EP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 76mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW42N65M5 STW42N65M5 STMicroelectronics stx42n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW43N60DM2 STMicroelectronics stw43n60dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW15NK50Z STP15NK50ZFP.pdf
STW15NK50Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 209 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.4 EUR
35+ 2.09 EUR
37+ 1.97 EUR
Mindestbestellmenge: 22
STW15NK90Z description STW15NK90Z-DTE.pdf
STW15NK90Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.31 EUR
18+ 3.98 EUR
Mindestbestellmenge: 10
STW18N60DM2 STW18N60DM2-DTE.pdf
STW18N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW18N60M2 STx18N60M2-DTE.pdf
STW18N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 255mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW18N65M5 stw18n65m5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 9.4A; Idm: 60A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW18NM60N stw18nm60n.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Pulsed drain current: 52A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW18NM80 STx18NM80-DTE.pdf
STW18NM80
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.71A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.71A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW19NM60N stw19nm60n.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.2A; Idm: 52A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20N90K5 stw20n90k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20N95DK5 stw20n90k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 50.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20N95K5 STx20N95K5.pdf
STW20N95K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20NK50Z STW20NK50Z.pdf
STW20NK50Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1275 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
33+ 2.22 EUR
35+ 2.09 EUR
Mindestbestellmenge: 20
STW20NM50FD STW20NM50FD-DTE.pdf
STW20NM50FD
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW20NM60 STx20NM60x-DTE.pdf
STW20NM60
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; 192W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 192W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.62 EUR
24+ 3.05 EUR
25+ 2.89 EUR
Mindestbestellmenge: 16
STW20NM60FD STx20NM60xD-DTE.pdf
STW20NM60FD
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW21N150K5 STW21N150K5-DTE.pdf
STW21N150K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 8.7A; 446W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8.7A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+22.55 EUR
5+ 15 EUR
Mindestbestellmenge: 4
STW21N90K5 STx21N90K5-DTE.pdf
STW21N90K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 900V; 11.6A; 250W
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: SuperMESH5™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
6+ 11.91 EUR
10+ 7.84 EUR
Mindestbestellmenge: 4
STW21NM60ND STx21NM60ND-DTE.pdf
STW21NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 10A; 140W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW22N95K5 en.DM00092786.pdf
Hersteller: STMicroelectronics
STW22N95K5 THT N channel transistors
Produkt ist nicht verfügbar
STW23N80K5 stw23n80k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 64A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW23N85K5 stw23n85k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 850V; 12.4A; Idm: 250A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 12.4A
Pulsed drain current: 250A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW24N60M2 STx24N60M2-DTE.pdf
STW24N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW24N60M6 stw24n60m6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 52.5A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.7A
Pulsed drain current: 52.5A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 162mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW24NM60N STx24NM60N-DTE.pdf
STW24NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW25N60M2-EP stw25n60m2-ep.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.3A
Pulsed drain current: 72A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW25N80K5 STx25N80K5-DTE.pdf
STW25N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 12.3A; 250W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12.3A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW26N65DM2 stw26n65dm2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW26NM50 STW26NM50-DTE.pdf
STW26NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Kind of package: tube
Drain-source voltage: 500V
Drain current: 18.9A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Technology: MDmesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.14 EUR
15+ 5.03 EUR
16+ 4.76 EUR
Mindestbestellmenge: 9
STW26NM60N STW26NM60N-DTE.pdf
STW26NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.55 EUR
16+ 4.55 EUR
17+ 4.3 EUR
Mindestbestellmenge: 9
STW27N60M2-EP stw27n60m2-ep.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 80A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW28N60DM2 stw28n60dm2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW28N60M2 STx28N60M2-DTE.pdf
STW28N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.03 EUR
24+ 3.07 EUR
25+ 2.9 EUR
60+ 2.85 EUR
120+ 2.79 EUR
Mindestbestellmenge: 18
STW28N65M2 stw28n65m2.pdf
STW28N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.22 EUR
16+ 4.7 EUR
20+ 3.62 EUR
21+ 3.42 EUR
Mindestbestellmenge: 14
STW28NM50N STx28NM50N-DTE.pdf
STW28NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.92 EUR
21+ 3.52 EUR
27+ 2.75 EUR
28+ 2.6 EUR
Mindestbestellmenge: 19
STW30N65M5 stw30n65m5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.39 EUR
15+ 4.78 EUR
510+ 4.56 EUR
Mindestbestellmenge: 10
STW30N80K5 stw30n80k5.pdf
STW30N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 96A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11.44 EUR
9+ 8.19 EUR
10+ 7.75 EUR
600+ 7.45 EUR
Mindestbestellmenge: 7
STW31N65M5 STW31N65M5.pdf
STW31N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW32NM50N stw32nm50n.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW33N60DM2 stw33n60dm2.pdf
STW33N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.42 EUR
11+ 6.51 EUR
100+ 5.31 EUR
Mindestbestellmenge: 10
STW33N60M6 stw33n60m6.pdf
STW33N60M6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW34N65M5 STx34N65M5-DTE.pdf
STW34N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 17.7A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.7A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW34NM60N STW34NM60N-DTE.pdf
STW34NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 392 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+10.05 EUR
16+ 4.58 EUR
17+ 4.32 EUR
Mindestbestellmenge: 8
STW34NM60ND STx34NM60ND-DTE.pdf
STW34NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW35N60DM2 STW35N60DM2-DTE.pdf
STW35N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW35N65DM2 stw35n65dm2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW36N60M6 stw36n60m6.pdf
STW36N60M6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW37N60DM2AG stw37n60dm2ag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW38N65M5 STx38N65M5-DTE.pdf
STW38N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 19A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW38N65M5-4 stw38n65m5-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW3N150 STP3N150.pdf
STW3N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 101 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.56 EUR
17+ 4.26 EUR
18+ 4.03 EUR
60+ 4 EUR
120+ 3.88 EUR
Mindestbestellmenge: 13
STW3N170 stw3n170.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1.6A
Pulsed drain current: 10.4A
Power dissipation: 0.16W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW40N60M2-4 stw40n60m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW40N65M2 stw40n65m2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 87mΩ
Mounting: THT
Gate charge: 56.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW40N90K5 en.DM00265509.pdf
STW40N90K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A
Mounting: THT
Case: TO247
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Technology: MDmesh™ K5
Power dissipation: 446W
Pulsed drain current: 160A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 25A
On-state resistance: 99mΩ
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+16.5 EUR
Mindestbestellmenge: 5
STW40N95DK5 en.DM00094303.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 24A; Idm: 152A; 450W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Kind of channel: enhanced
Power dissipation: 450W
Pulsed drain current: 152A
Gate-source voltage: ±30V
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 24A
On-state resistance: 120mΩ
Gate charge: 100nC
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
STW40N95K5 en.DM00119299.pdf
STW40N95K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 24A; 450W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Technology: MDmesh™ K5
Power dissipation: 450W
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 950V
Drain current: 24A
On-state resistance: 110mΩ
Produkt ist nicht verfügbar
STW40NF20 STx40NF20-DTE.pdf
STW40NF20
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO247
Mounting: THT
Technology: STripFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: tube
Polarisation: unipolar
Power dissipation: 160W
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Drain current: 25A
Drain-source voltage: 200V
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.65 EUR
18+ 4.1 EUR
20+ 3.58 EUR
Mindestbestellmenge: 16
STW42N60M2-EP STx42N60M2-EP-DTE.pdf
STW42N60M2-EP
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2-EP; unipolar; 600V; 22A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2-EP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 76mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW42N65M5 stx42n65m5.pdf
STW42N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW43N60DM2 stw43n60dm2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 278 556 834 1112 1210 1211 1212 1213 1214 1215 1216 1217 1218 1219 1220 1390 1668 1946 2224 2502 2780 2787  [ Nächste Seite >> ]